LTC4440
High Speed, High Voltage
High Side Gate Driver
DESCRIPTION
FEATURES
Wide Operating VIN Range: Up to 80V
n Rugged Architecture Tolerant of 100V V
IN
Transients
n Powerful 1.5Ω Driver Pull-Down
n Powerful 2.4A Peak Current Driver Pull-Up
n 7ns Fall Time Driving 1000pF Load
n 10ns Rise Time Driving 1000pF Load
n Drives Standard Threshold MOSFETs
n TTL/CMOS Compatible Inputs with Hysteresis
n Input Thresholds are Independent of Supply
n Undervoltage Lockout
n Low Profile (1mm) SOT-23 (ThinSOT)™ and
Thermally Enhanced 8-Pin MSOP Packages
The LTC®4440 is a high frequency high side N-channel
MOSFET gate driver that is designed to operate in applications with VIN voltages up to 80V. The LTC4440 can
also withstand and continue to function during 100V VIN
transients. The powerful driver capability reduces switching losses in MOSFETs with high gate capacitances. The
LTC4440’s pull-up has a peak output current of 2.4A and
its pull-down has an output impedance of 1.5Ω.
n
The LTC4440 features supply independent TTL/CMOS
compatible input thresholds with 350mV of hysteresis.
The input logic signal is internally level-shifted to the
bootstrapped supply, which may function at up to 115V
above ground.
APPLICATIONS
n
n
n
n
The LTC4440 contains both high side and low side undervoltage lockout circuits that disable the external MOSFET
when activated.
Telecommunications Power Systems
Distributed Power Architectures
Server Power Supplies
High Density Power Modules
The LTC4440 is available in the low profile (1mm) SOT-23
and thermally enhanced 8-lead MSOP packages.
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and
ThinSOT is a trademark of Linear Technology Corporation. All other trademarks are the property
of their respective owners. Protected by U.S. Patents, including 6677210.
PARAMETER
Max Operating TS
Absolute Max TS
MOSFET Gate Drive
VCC UV+
VCC UV–
LTC4440
80V
100V
8V to 15V
6.3V
6.0V
LTC4440-5
60V
80V
4V to 15V
3.2V
3.04V
LTC4440A-5
80V
100V
4V to 15V
3.2V
3.04V
TYPICAL APPLICATION
Synchronous Phase-Modulated Full-Bridge Converter
VIN
36V TO 72V
100V PEAK TRANSIENT
(ABS MAX)
VCC
8V TO 15V
LTC4440 Driving a 1000pF
Capacitive Load
LTC4440
VCC BOOST
INP
TG
GND
TS
INPUT
(INP)
2V/DIV
LTC4440
VCC
LTC3722-1
VCC BOOST
INP
TG
GND
TS
•
•
4440 TA01
OUTPUT
(TG – TS)
5V/DIV
10ns/DIV
4440 F02
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1
LTC4440
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Supply Voltage
VCC ........................................................ – 0.3V to 15V
BOOST – TS............................................ –0.3V to 15V
INP Voltage................................................. –0.3V to 15V
BOOST Voltage (Continuous)...................... –0.3V to 95V
BOOST Voltage (100ms)............................–0.3V to 115V
TS Voltage (Continuous)................................ –5V to 80V
TS Voltage (100ms)..................................... –5V to 100V
Peak Output Current < 1µs (TG).................................. 4A
Driver Output TG (with Respect to TS)........ –0.3V to 15V
Operating Temperature Range (Note 2)
LTC4440E ............................................–40°C to 85°C
LTC4440I ........................................... –40°C to 125°C
Junction Temperature (Note 3)............................. 125°C
Storage Temperature Range................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................... 300°C
PIN CONFIGURATION
TOP VIEW
INP
GND
VCC
GND
1
2
3
4
9
TOP VIEW
8
7
6
5
TS
TG
BOOST
NC
VCC 1
MS8E PACKAGE
8-LEAD PLASTIC MSOP
TJMAX = 125°C, θJA = 40°C/W (NOTE 4)
EXPOSED PAD (PIN 9) IS GND, MUST BE SOLDERED TO PCB
6 BOOST
GND 2
5 TG
INP 3
4 TS
S6 PACKAGE
6-LEAD PLASTIC SOT-23
TJMAX = 125°C, θJA = 230°C/W
ORDER INFORMATION
LEAD FREE FINISH
TAPE AND REEL
PART MARKING
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LTC4440EMS8E#PBF
LTC4440EMS8E#TRPBF
LTF9
8-Lead Plastic MSOP
–40°C to 85°C
LTC4440IMS8E#PBF
LTC4440IMS8E#TRPBF
LTF9
8-Lead Plastic MSOP
–40°C to 125°C
LTC4440ES6#PBF
LTC4440ES6#TRPBF
LTZY
6-Lead Plastic SOT-23
–40°C to 85°C
LTC4440IS6#PBF
LTC4440IS6#TRPBF
LTZY
6-Lead Plastic SOT-23
–40°C to 125°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on nonstandard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
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LTC4440
ELECTRICAL
CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 12V, VTS = GND = 0V, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
250
25
400
80
µA
µA
6.5
6.2
300
7.3
7.0
V
V
mV
110
86
180
170
µA
µA
7.4
6.9
500
7.95
7.60
V
V
mV
Main Supply (VCC)
IVCC
DC Supply Current
Normal Operation
UVLO
UVLO
Undervoltage Lockout Threshold
INP = 0V
VCC < UVLO Threshold (Falling) – 0.1V
VCC Rising
VCC Falling
Hysteresis
l
l
5.7
5.4
Bootstrapped Supply (BOOST – TS)
IBOOST
DC Supply Current
Normal Operation
UVLO
UVLOHS
Undervoltage Lockout Threshold
INP = 0V
VBOOST – VTS < UVLOHS(FALLING) – 0.1V, VCC = INP = 5V
VBOOST – VTS Rising
VBOOST – VTS Falling
Hysteresis
l
l
6.75
6.25
Input Signal (INP)
VIH
High Input Threshold
INP Ramping High
l
1.3
1.6
2
V
VIL
Low Input Threshold
INP Ramping Low
l
0.85
1.25
1.6
V
VIH – VIL
Input Voltage Hysteresis
0.350
IINP
Input Pin Bias Current
±0.01
±2
µA
V
Output Gate Driver (TG)
VOH
High Output Voltage
ITG = –10mA, VOH = VBOOST – VTG
VOL
Low Output Voltage
ITG = 100mA:
0.7
150
150
0°C ≤ TA ≤ 85°C l
–40°C ≤ TA ≤ 125°C l
IPU
Peak Pull-Up Current
0°C ≤ TA ≤ 85°C l
–40°C ≤ TA ≤ 125°C l
RDS
Output Pull-Down Resistance
0°C ≤ TA ≤ 85°C l
–40°C ≤ TA ≤ 125°C l
1.7
1.5
V
220
300
2.4
2.4
1.5
1.5
mV
mV
A
A
2.2
3
Ω
Ω
Switching Timing
tr
Output Rise Time
10% – 90%, CL = 1nF
10% – 90%, CL = 10nF
10
100
ns
ns
tf
Output Fall Time
10% – 90%, CL = 1nF
10% – 90%, CL = 10nF
7
70
ns
ns
tPLH
Output Low-High Propagation Delay
0°C ≤ TA ≤ 85°C l
–40°C ≤ TA ≤ 125°C l
30
30
65
75
ns
ns
tPHL
Output High-Low Propagation Delay
0°C ≤ TA ≤ 85°C l
–40°C ≤ TA ≤ 125°C l
28
28
65
75
ns
ns
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The LTC4440E is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls. The LTC4440I is guaranteed and tested
over the –40°C to 125°C operating temperature range.
Note 3: TJ is calculated from the ambient temperature TA and power
dissipation PD according to the following formula:
TJ = TA + (PD • θJA°C/W)
Note 4: Failure to solder the exposed back side of the MS8E package to the
PC board will result in a thermal resistance much higher than 40°C/W.
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LTC4440
TYPICAL PERFORMANCE CHARACTERISTICS
300
BOOST – TS Supply Quiescent
Current vs Voltage
500
TA = 25°C
INP = 0V
QUIESCENT CURRENT (µA)
QUIESCENT CURRENT (µA)
INP = VCC
200
150
100
50
170
TA = 25°C
450
250
Output Low Voltage (VOL)
vs Supply Voltage
OUTPUT (TG – TS) VOLTAGE (mV)
VCC Supply Quiescent Current
vs Voltage
400
350
INP = VCC
300
250
200
150
INP = 0V
100
ITG = 100mA
TA = 25°C
165
160
155
150
145
50
0
0
15
5
10
VCC SUPPLY VOLTAGE (V)
12
ITG = –10mA
11
ITG = –100mA
10
9
380
VIH
(INPUT HIGH THRESHOLD)
1.6
1.4
VIL
(INPUT LOW THRESHOLD)
1.2
1.0
8
8
13
14
10
12
11
BOOST – TS SUPPLY VOLTAGE (V)
9
0.8
15
7
9
11
13
VCC SUPPLY VOLTAGE (V)
CURRENT (µA)
4440 G07
INP = 0V
240
220
12
10
VCC SUPPLY VOLTAGE (V)
8
14
4440 G06
6.50
INP = 12V
200
150
100
50
0
–60
RISING THRESHOLD
6.45
6.40
6.35
6.30
6.25
FALLING THRESHOLD
6.20
–30
0
30
60
TEMPERATURE (°C)
4
INP = 0.8V
260
6.55
250
250ns/DIV
280
VCC Undervoltage Lockout
Thresholds vs Temperature
VCC SUPPLY VOLTAGE (V)
INPUT
(INP)
5V/DIV
OUTPUT
(TG)
5V/DIV
INP = 2V
300
VCC Supply Current (VCC = 12V)
vs Temperature
300
VCC = 12V
340
320
200
15
TA = 25°C
360
4440 G05
4440 G04
2MHz Operation
15
VCC Supply Current
at TTL Input Levels
TA = 25°C
1.8
INPUT THRESHOLD (V)
OUTPUT VOLTAGE (TG – TS) (V)
2.0
ITG = –1mA
12
14
11
13
9
10
BOOST – TS SUPPLY VOLTAGE (V)
8
4440 G03
Input Thresholds (INP)
vs Supply Voltage
TA = 25°C
13
140
15
4440 G02
14
7
10
5
BOOST – TS SUPPLY VOLTAGE (V)
4440 G01
Output High Voltage (VOH)
vs Supply Voltage
15
0
VCC SUPPLY QUIESCENT CURRENT (µA)
0
90
120
6.15
–60
–30
0
30
60
TEMPERATURE (°C)
4440 G08
90
120
4440 G09
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LTC4440
TYPICAL PERFORMANCE CHARACTERISTICS
Boost Supply (BOOST – TS)
Undervoltage Lockout Thresholds
vs Temperature
Boost Supply Current
vs Temperature
INP = 12V
300
250
200
150
INP = 0V
100
0
30
60
90
1.8
7.3
7.2
7.1
7.0
FALLING THRESHOLD
6.9
6.7
–60
120
–30
0
30
60
90
TEMPERATURE (°C)
TEMPERATURE (°C)
2.9
460
2.8
440
2.7
PEAK CURRENT (A)
HYSTERESIS (mV)
3.0
480
420
VIH-VIL (VCC = 12V)
VIH-VIL (VCC = 15V)
360
60
0
–30
90
2.0
–60
120
–30
0
30
60
90
TEMPERATURE (°C)
90
120
4440 G12
Output Driver Pull-Down
Resistance vs Temperature
45
3.0
120
4440 G14
4440 G13
Propagation Delay vs Temperature
(VCC = BOOST = 12V)
40
PROPAGATION DELAY (ns)
2.5
BOOST – TS = 12V
BOOST – TS = 8V
1.5
BOOST – TS = 15V
1.0
0.5
0
–60
60
BOOST – TS = 12V
TEMPERATURE (°C)
2.0
30
TEMPERATURE (°C)
BOOST – TS = 15V
2.3
2.1
30
0.8
–60
120
2.4
2.2
0
VIL (VCC = 8V)
2.5
320
–30
1.2
2.6
340 VIH-VIL (VCC = 8V)
300
–60
VIL (VCC = 12V)
VIL (VCC = 15V)
1.4
Peak Driver (TG) Pull-Up Current
vs Temperature
500
380
VIH (VCC = 15V)
VIH (VCC = 8V)
4440 G11
4440 G10
Input Threshold Hysteresis
vs Temperature
400
1.6
VIH (VCC = 12V)
1.0
6.8
50
–30
RISING THRESHOLD
7.4
INPUT THRESHOLD (V)
350
RDS (Ω)
CURRENT (µA)
400
2.0
7.5
BOOST – TS SUPPLY VOLTAGE (V)
450
0
–60
Input Threshold vs Temperature
7.6
500
35
tPLH
30
tPHL
25
20
15
10
5
–30
0
30
60
TEMPERATURE (°C)
90
120
0
–60
–30
0
30
60
TEMPERATURE (°C)
4440 G15
90
120
4440 G16
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5
LTC4440
PIN FUNCTIONS
SOT-23 Package
Exposed Pad MS8E Package
VCC (Pin 1): Chip Supply. This pin powers the internal
low side circuitry. A low ESR ceramic bypass capacitor
should be tied between this pin and the GND pin (Pin 2).
INP (Pin 1): Input Signal. TTL/CMOS compatible input
referenced to GND (Pin 2).
GND (Pin 2): Chip Ground.
INP (Pin 3): Input Signal. TTL/CMOS compatible input
referenced to GND (Pin 2).
TS (Pin 4): Top (High Side) Source Connection.
GND (Pins 2, 4): Chip Ground.
VCC (Pin 3): Chip Supply. This pin powers the internal
low side circuitry. A low ESR ceramic bypass capacitor
should be tied between this pin and the GND pin (Pin 2).
TG (Pin 5): High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
NC (Pin 5): No Connect. No connection required. For
convenience, this pin may be tied to Pin 6 (BOOST) on
the application board.
BOOST (Pin 6): High Side Bootstrapped Supply. An
external capacitor should be tied between this pin and
TS (Pin 4). Normally, a bootstrap diode is connected
between VCC (Pin 1) and this pin. Voltage swing at this
pin is from VCC – VD to VIN + VCC – VD, where VD is the
forward voltage drop of the bootstrap diode.
BOOST (Pin 6): High Side Bootstrapped Supply. An external
capacitor should be tied between this pin and TS (Pin 8).
Normally, a bootstrap diode is connected between VCC
(Pin 3) and this pin. Voltage swing at this pin is from VCC
– VD to VIN + VCC – VD, where VD is the forward voltage
drop of the bootstrap diode.
TG (Pin 7): High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
TS (Pin 8): Top (High Side) Source Connection.
Exposed Pad (Pin 9): Ground. Must be electrically connected to Pins 2 and 4 and soldered to PCB ground for
optimum thermal performance.
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LTC4440
BLOCK DIAGRAM
BOOST
HIGH SIDE
UNDERVOLTAGE
LOCKOUT
VCC UNDERVOLTAGE
LOCKOUT
8V TO 15V
VIN
UP TO 80V,
TRANSIENT
UP TO 100V
TG
TS
GND
BOOST
INP
LEVEL SHIFTER
GND
4440 BD
TS
TIMING DIAGRAM
INPUT RISE/FALL TIME < 10ns
INPUT (INP)
VIH
VIL
90%
10%
OUTPUT (TG)
tr
tPLH
tPHL
tf
4440 TD
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7
LTC4440
APPLICATIONS INFORMATION
Overview
Output Stage
The LTC4440 receives a ground-referenced, low voltage
digital input signal to drive a high side N-channel power
MOSFET whose drain can float up to 100V above ground,
eliminating the need for a transformer between the low
voltage control signal and the high side gate driver. The
LTC4440 normally operates in applications with input
supply voltages (VIN) up to 80V, but is able to withstand
and continue to function during 100V, 100ms transients
on the input supply.
A simplified version of the LTC4440’s output stage is
shown in Figure 3 . The pull-down device is an N-channel
MOSFET (N1) and the pull-up device is an NPN bipolar
junction transistor (Q1). The output swings from the lower
rail (TS) to within an NPN VBE (~ 0.7V) of the positive rail
(BOOST). This large voltage swing is important in driving external power MOSFETs, whose RDS(ON) is inversely
proportional to its gate overdrive voltage (VGS – VTH).
The powerful output driver of the LTC4440 reduces the
switching losses of the power MOSFET, which increase
with transition time. The LTC4440 is capable of driving a
1nF load with 10ns rise and 7ns fall times using a bootstrapped supply voltage VBOOST–TS of 12V.
Input Stage
The LTC4440 employs TTL/CMOS compatible input thresholds that allow a low voltage digital signal to drive standard
power MOSFETs. The LTC4440 contains an internal voltage
regulator that biases the input buffer, allowing the input
thresholds (VIH = 1.6V, VIL = 1.25V) to be independent of
variations in VCC. The 350mV hysteresis between VIH and
VIL eliminates false triggering due to noise during switching
transitions. However, care should be taken to keep this
pin from any noise pickup, especially in high frequency,
high voltage applications. The LTC4440 input buffer has a
high input impedance and draws negligible input current,
simplifying the drive circuitry required for the input.
The LTC4440’s peak pull-up (Q1) current is 2.4A while the
pull-down (N1) resistance is 1.5Ω. The low impedance
of N1 is required to discharge the power MOSFET’s gate
capacitance during high-to-low signal transitions. When the
power MOSFET’s gate is pulled low (gate shorted to source
through N1) by the LTC4440, its source (TS) is pulled low
by its load (e.g., an inductor or resistor). The slew rate
of the source/gate voltage causes current to flow back to
the MOSFET’s gate through the gate-to-drain capacitance
(CGD). If the MOSFET driver does not have sufficient sink
current capability (low output impedance), the current
through the power MOSFET’s CGD can momentarily pull
the gate high, turning the MOSFET back on.
A similar scenario exists when the LTC4440 is used to drive
a low side MOSFET. When the low side power MOSFET’s
gate is pulled low by the LTC4440, its drain voltage is
pulled high by its load (e.g., inductor or resistor). The slew
rate of the drain voltage causes current to flow back to the
MOSFET’s gate through its gate-to-drain capacitance. If
VIN
UP TO 100V
BOOST
LTC4440
CGD
Q1
TG
POWER
MOSFET
N1
CGS
TS
LOAD
INDUCTOR
4440 F03
V–
Figure 3. Capacitance Seen by TG During Switching
8
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LTC4440
APPLICATIONS INFORMATION
the MOSFET driver does not have sufficient sink current
capability (low output impedance), the current through
the power MOSFET’s CGD can momentarily pull the gate
high, turning the MOSFET back on.
Rise/Fall Time
Since the power MOSFET generally accounts for the majority of the power loss in a converter, it is important to
quickly turn it on or off, thereby minimizing the transition
time in its linear region. The LTC4440 can drive a 1nF load
with a 10ns rise time and 7ns fall time.
Power dissipation consists of standby and switching
power losses:
PD = PSTDBY + PAC
where:
PSTDBY = Standby Power Losses
PAC = AC Switching Losses
The LTC4440 consumes very little current during standby.
The DC power loss at VCC = 12V and VBOOST–TS = 12V is
only (250µA + 110µA)(12V) = 4.32mW.
The LTC4440’s rise and fall times are determined by the
peak current capabilities of Q1 and N1. The predriver that
drives Q1 and N1 uses a nonoverlapping transition scheme
to minimize cross-conduction currents. N1 is fully turned
off before Q1 is turned on and vice versa.
AC switching losses are made up of the output capacitive
load losses and the transition state losses. The capacitive
load losses are primarily due to the large AC currents
needed to charge and discharge the load capacitance during switching. Load losses for the output driver driving a
pure capacitive load COUT would be:
Power Dissipation
Load Capacitive Power = (COUT)(f)(VBOOST–TS)2
To ensure proper operation and long-term reliability,
the LTC4440 must not operate beyond its maximum
temperature rating. Package junction temperature can
be calculated by:
TJ = TA + PD (θJA)
where:
TJ = Junction Temperature
TA = Ambient Temperature
PD = Power Dissipation
θJA = Junction-to-Ambient Thermal Resistance
The power MOSFET’s gate capacitance seen by the driver
output varies with its VGS voltage level during switching.
A power MOSFET’s capacitive load power dissipation
can be calculated using its gate charge, QG. The QG value
corresponding to the MOSFET’s VGS value (VCC in this
case) can be readily obtained from the manufacturer’s
QG vs VGS curves:
Load Capacitive Power (MOS) = (VBOOST–TS)(QG)(f)
Transition state power losses are due to both AC currents
required to charge and discharge the driver’s internal
nodal capacitances and cross-conduction currents in the
internal gates.
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9
LTC4440
APPLICATIONS INFORMATION
Undervoltage Lockout (UVLO)
The LTC4440 contains both low side and high side undervoltage lockout detectors that monitor VCC and the
bootstrapped supply VBOOST–TS. When VCC falls below
6.2V, the internal buffer is disabled and the output pin
OUT is pulled down to TS. When VBOOST – TS falls below
6.9V, OUT is pulled down to TS. When both supplies are
undervoltage, OUT is pulled low to TS and the chip enters
a low current mode, drawing approximately 25µA from
VCC and 86µA from BOOST.
Bypassing and Grounding
The LTC4440 requires proper bypassing on the VCC
and VBOOST–TS supplies due to its high speed switching
(nanoseconds) and large AC currents (Amperes). Careless
component placement and PCB trace routing may cause
excessive ringing and under/overshoot.
To obtain the optimum performance from the LTC4440:
A. Mount the bypass capacitors as close as possible
between the VCC and GND pins and the BOOST and
TS pins. The leads should be shortened as much as
possible to reduce lead inductance.
10
B. Use a low inductance, low impedance ground plane
to reduce any ground drop and stray capacitance. Remember that the LTC4440 switches >2A peak currents
and any significant ground drop will degrade signal
integrity.
C. Plan the power/ground routing carefully. Know where
the large load switching current is coming from and
going to. Maintain separate ground return paths for
the input pin and the output power stage.
D. Keep the copper trace between the driver output pin
and the load short and wide.
E. When using the MS8E package, be sure to solder the
exposed pad on the back side of the LTC4440 package
to the board. Correctly soldered to a 2500mm2 doublesided 1oz copper board, the LTC4440 has a thermal
resistance of approximately 40°C/W. Failure to make
good thermal contact between the exposed back side
and the copper board will result in thermal resistances
far greater than 40°C/W.
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A
1
1µF
100V
×4
4
2
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1µF
220pF
150Ω
20k
1/4W
12V
UVLO
VREF
VIN
SBUS
0.47µF
9
ADLY PDLY
11
Q3
Q1
12V
220pF
8
180pF
5.1k
1
DPRG NC SYNC
220pF
2
14
5VREF 150k
12
18
10
4.99k
B
8 0.22µF
21
20
2
C
33k
10k
13
5
6
23
D
17
10Ω
D
15
C3
68µF
20V
Q4
Q2
12V
8 0.22µF
68nF
8.25k
22
MMBT3904
CT SPRG RLEB FB GND PGND
24
19
ISNS
10Ω
4
16
+
12V
7
D11
3
5VREF
750Ω
200k
ISNS
D4
2.2nF
6
8
2
4
2
4
D8
D7
330Ω
5
C4
2.2nF
250V
8
MOC207
5
9
100k
2
1
VH
D12
5.1V
1
3
11
CSF–
12
8
3
4
2.7k
470Ω
1/4W
6
5
GND-F GND-S
14 15
VOUT
16
PVCC
22nF
10k
330pF
7
TIMER
–VOUT
2.49k
9.53k
13
4440 TA03
8
10
+
MF MF2 VCC
909Ω
D1
820pF
200V
15Ω
1W
D6
Si7852DP
×4
C1, C2
180µF
16V
×2
VH
GND PGND GND2 PGND2
LTC3901EGN
ME ME2 CSF+
2
1.10k
4.87k
1/4W
V+
LT1431CS8
COLL
REF
0.047µF
5
CSE–
6
L3
0.85µH
Si7852DP
×4
909Ω
CSE+
1.10k
4.87k
1/4W
SYNC
220pF
100Ω
1
6
7
8
10
11
7
8
10
11
T1
5(105µH):1:1
T2
5:5(105µH):1:1
D5
T3
1(1.5mH):0.5
1
4
L4
1mH
0.1µF
D9 3.3V
100Ω
Si7852DP
×2
Si7852DP
×2
22Ω
330pF
4
SS COMP
CS
OUTA OUTB OUTC OUTD OUTF OUTE
A
B
1.1k
0.02Ω
1.5W
LTC3722EGN-1
0.02Ω
1.5W
Si7852DP
×2
L2
150nH
Si7852DP
×2
51Ω
2W
0.47µF
0.47µF 100V
100V
•
VIN
20k
1
VCC
6
INP
BOOST
LTC4440EMS8E
7
TG
GND GND TS
C
VCC
6
INP
BOOST
LTC4440EMS8E
7
TG
GND GND TS
D3
3
D2
12V
3
12V
0.47µF, 100V TDK C3216X7R2A474M
1µF, 100V TDK C4532X7R2A105M
C1,C2: SANYO 16SP180M
C3: AVX TPSE686M020R0150
C4: MURATA DE2E3KH222MB3B
D1, D4-D6: MURS120T3
D2, D3, D7, D8: BAS21
D9: MMBZ5226B
D10: MMBZ5240B
D11: BAT54
D12: MMBZ231B
L1: SUMIDA CDEP105-1R3MC-50
L2: PULSE PA0651
L3: PA1294.910
L4: COILCRAFT DO1608C-105
Q1, Q2: ZETEX FMMT619
Q3, Q4: ZETEX FMMT718
T1, T2: PULSE PA0526
T3: PULSE PA0785
1µF
100V
•
30.1k
182k
–VIN
36V TO 72V
51Ω
2W
•
VIN
•
•
•
•
•
•
•
VIN
•
L1
1.3µH
LTC3722/LTC4440 420W 36V-72VIN to 12V/35A Isolated Full-Bridge Supply
1
–VOUT
1µF
39.2k
–VOUT
1µF
VOUT
0.47µF
100V
13k
1/2W
VOUT
1µF
D10
10V
MMBT3904
100Ω
–VOUT
12V/35A
VOUT
–VOUT
VOUT
1k
LTC4440
TYPICAL APPLICATIONS
4440fb
11
VIN
93
94
95
96
97
–VIN
6
8
For more information www.linear.com/LTC4440
66.5k
1.5nF
1µF
15
5
13 7
8
UVLO
FB GND CT
10k
270pF 33k
16
12 14
68nF
0.47µF
1
VREF
9
150k
SPRG RLEB SS DPRG
SDRB
VCC
DRVB
ISNS
DRVA
LTC3723EGN-1
R2
0.03Ω
1.5W
1.5k
2
B
R1
0.03Ω
1.5W
Si7852DP
4
4
A
2
B
243k
330pF
11
22nF
6
6
1
5
T2
1(1.5mH):0.5
1
4
D6
D5
Si7852DP
3
4
2
8
5
C4
2.2nF
250V
8
MOC207
665Ω
5
9
22nF
D8
10V
1
0.1µF
14 15
6
CSE+
L6
1.25µH
CSE–
5
8
3
+
4
1k
100Ω
1/4W
6
5
GND-F GND-S
8
10
VOUT
4440 TA05
–VOUT
2.49k
9.53k
13
2
+
VE
VF
3
16
C1, C2
47µF
16V
×2
22nF
10k
1
–VOUT
1µF
4.7µF
MMBT3904
D7
10V
1k
1µF, 100V TDK C3225X7R2A105M
C1,C2: SANYO 16TQC47M
C3: AVX TPSE686M020R0150
C4: MURATA GHM3045X7R222K-GC
D2: DIODES INC. ES1B
D3-D6: BAS21
D7, D8: MMBZ5240B
L4: COILCRAFT DO1608C-105
L5: COILCRAFT DO1813P-561HC
L6: PULSE PA1294.132 OR
PANASONIC ETQP1H1R0BFA
R1, R2: IRC LRC2512-R03G
T1: PULSE PA0805.004
T2: PULSE PA0785
470pF
7
TIMER
PVCC
VOUT
–VOUT
12V/20A
VOUT
42.2k 100Ω
–VOUT
1µF
VOUT
470pF
100V
10Ω
1W
ME ME2 VCC
866Ω
GND PGND GND2 PGND2
LTC3901EGN
MF MF2
1k
6.19k
1/4W
V
LT1431CS8
COLL
REF
12
CSF –
11
CSF+
1k
6.19k
1/4W
SYNC
220pF
100
100k
2
1
866Ω
1k
1/4W
VE
1µF
100V
D2
VF
VF
Si7370DP
×2
7
VE
Si7370DP
×2
11
9
T1
4T:6T(65µHMIN):6T:2T:2T
Si7852DP
0.1µF
L4
1mH
ISNS
22Ω
10
+
12V
750Ω
COMP
CS
SDRA
3
C3
68µF
20V
0.1µF
VCC
6
INP BOOST
LTC4440ES6
5 4.7Ω
TG
GND TS
6
A
0.1µF
20
200Ω
1/4W
4
3
D3
•
30k
1/4W
12V
2
Si7852DP
A
1
12V
•
464k
D4
VCC
6
INP BOOST
LTC4440ES6
5 4.7Ω
TG
GND TS
VIN
3
1
12V
18
56VIN
48VIN
42VIN
B
1µF
100V
×3
VIN
16
10
12
14
LOAD CURRENT (A)
1µF
100V
L5
0.56µH
•
•
42V TO 56V
EFFICIENCY (%)
•
•
•
12
•
LTC3723-1 240W 42-56VIN to 12V/20A Isolated 1/4Brick (2.3" × 1.45")
LTC4440
TYPICAL APPLICATIONS
4440fb
LTC4440
PACKAGE DESCRIPTION
MS8E Package
8-Lead Plastic MSOP, Exposed Die Pad
(Reference LTC DWG # 05-08-1662 Rev K)
BOTTOM VIEW OF
EXPOSED PAD OPTION
1.88
(.074)
1
1.88 ±0.102
(.074 ±.004)
0.29
REF
1.68
(.066)
0.889 ±0.127
(.035 ±.005)
0.05 REF
5.10
(.201)
MIN
DETAIL “B”
CORNER TAIL IS PART OF
DETAIL “B” THE LEADFRAME FEATURE.
FOR REFERENCE ONLY
NO MEASUREMENT PURPOSE
1.68 ±0.102 3.20 – 3.45
(.066 ±.004) (.126 – .136)
8
3.00 ±0.102
(.118 ±.004)
(NOTE 3)
0.65
(.0256)
BSC
0.42 ±0.038
(.0165 ±.0015)
TYP
8
7 6 5
0.52
(.0205)
REF
RECOMMENDED SOLDER PAD LAYOUT
0.254
(.010)
3.00 ±0.102
(.118 ±.004)
(NOTE 4)
4.90 ±0.152
(.193 ±.006)
DETAIL “A”
0° – 6° TYP
GAUGE PLANE
0.53 ±0.152
(.021 ±.006)
DETAIL “A”
1
2 3
4
1.10
(.043)
MAX
0.86
(.034)
REF
0.18
(.007)
SEATING
PLANE
0.22 – 0.38
(.009 – .015)
TYP
0.65
(.0256)
NOTE:
BSC
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
6. EXPOSED PAD DIMENSION DOES INCLUDE MOLD FLASH. MOLD FLASH ON E-PAD
SHALL NOT EXCEED 0.254mm (.010") PER SIDE.
0.1016 ±0.0508
(.004 ±.002)
MSOP (MS8E) 0213 REV K
4440fb
For more information www.linear.com/LTC4440
13
LTC4440
PACKAGE DESCRIPTION
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62
MAX
2.90 BSC
(NOTE 4)
0.95
REF
1.22 REF
3.85 MAX 2.62 REF
1.4 MIN
2.80 BSC
1.50 – 1.75
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
DATUM ‘A’
0.30 – 0.50 REF
0.09 – 0.20
(NOTE 3)
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
14
0.01 – 0.10
1.00 MAX
1.90 BSC
S6 TSOT-23 0302
4440fb
For more information www.linear.com/LTC4440
LTC4440
REVISION HISTORY
REV
DATE
DESCRIPTION
A
1013
Added comparison table
PAGE NUMBER
1
B
0215
Released I-Grade Version
2, 3
4440fb
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection
of its circuits
as described
herein will not infringe on existing patent rights.
For more
information
www.linear.com/LTC4440
15
LTC4440
TYPICAL APPLICATION
LTC3723-2/LTC4440/LTC3901 240W 42V-56VIN to Unregulated 12V Half-Bridge Converter
L1
0.56µH
VIN
•
•
1µF
100V
11V
1µF
100V
D1
1µF
100V
1
A
VCC
6
INP BOOST
LTC4440ES6
5
TG
GND TS
3
2
CS+
1
1µF
100V
Si7852DP
×2
T2
70(980H):1
1µF
100V
VIN
12V
MMBT3904
120Ω
15
4
DRVA
DRVB
VCC
LTC3723EGN-2
COMP
DPRG
VREF RAMP CT SPRG GND CS SS
12
1µF
30.1k
SDRA
UVLO
1µF
100pF
SDRB
62k
330pF
1
9
8
150pF
16
7
•
2
3
22Ω
0.1µF
1k
0.47µF
2N7002
4.7k
3k
12
10k
14 15
6
3k
5
CSE+
2
3
PVCC
GND PGND GND2 PGND2
8
4
16
CSE– ME ME2 VCC
LTC3901EGN
SYNC
220pF
0.22µF B
10k
470pF
9
–VOUT
4.7k
1/4W
CSF – MF MF2
100Ω
5
8
10 14 13
0.47µF
CSF+
11
FB
10k
11
T3
1(1.5mH):0.5
1
4
–VOUT
VE
4.7k
1/4W
•
5
215k
6
A
6
C2
180µF
16V
Si7370DP
×2
VF
T1
5:4:4:2:2
D3
•
15k
1/4W
11V
C1
2.2nF
250V
1
L3
1mH
68µF
Si7370DP
×2
5
D2
12V
Si7852DP
×2
VOUT
+
20Ω 1W
1µF
7
4 0.22µF
+
C3
11
1500pF
100V
VF
3
8
3
B
4
VOUT
L2 0.22µH
•
–VIN
7
9
•
1µF
100V
48VIN
VE
2
•
•
VIN
10
33.2k
1k
1µF
7
10V
MMBZ5240B
1µF
330pF
CS+
VOUT
MMBT3904
TIMER
13
100Ω
1
4440 TA04
D4
D5
7.5Ω
7.5Ω
12V
MMBZ5242B
1µF, 100V TDK C4532X7R2A105M
C1: MURATA DE2E3KH222MB3B
C2: SANYO 16SP180M
C3: AVX TPSE686M020R0150
D1-D3: BAS21
D4, D5: MMBD914
L1: COILCRAFT DO1813P-561HC
L2: SUMIDA CDEP105-0R2NC-50
L3: COILCRAFT DO1608C-105
T1: PULSE PA0801.005
T2: PULSE P8207
T3: PULSE PA0785
–VOUT
RELATED PARTS
PART NUMBER DESCRIPTION
COMMENTS
LTC4441
6A N-Channel MOSFET Gate Driver
Up to 25V Supply Voltage, Adjustable Gate Drive Voltage from 5V to 8V
LT1910
Protected High Side MOSFET Driver
Up to 48V/60V Surge Supply Voltage, Adjustable Current Limit
LTC4442
High Speed Synchronous N-Channel MOSFET Driver
Up to 38V Supply Voltage, 6V ≤ VCC ≤ 9.5V
LTC4449
High Speed Synchronous N-Channel MOSFET Driver
Up to 38V Supply Voltage, 4.5V ≤ VCC ≤ 6.5V
LTC4444/
LTC4444-5
High Voltage Synchronous N-Channel MOSFET Driver
with Shoot-Through Protection
Up to 100V Supply Voltage, 4.5V/7.2V ≤ VCC ≤ 13.5V, 3A Peak PullUp/0.55Ω Peak Pull-Down
LTC4446
High Voltage Synchronous N-Channel MOSFET Driver
without Shoot-Through Protection
Up to 100V Supply Voltage, 7.2V ≤ VCC ≤ 13.5V, 3A Peak Pull-Up/0.55Ω
Peak Pull-Down
LTC1154
High Side Micropower MOSFET Driver
Up to 18V Supply Voltage, 85μA Quiescent Current, Internal Charge Pump
LTC1155
Dual High Side Micropower MOSFET Driver
Up to 18V Supply Voltage, 85μA Quiescent Current, Internal Charge Pump
LTC3900
Synchronous Rectifier Driver for Forward Converters
Pulse Transformer Synchronous Input
LTC3901
Synchronous Rectifier Driver for Push-Pull and FullBridge Converters
Pulse Transformer Synchronous Input
LTC3722-1/
LTC3722-2
Synchronous Phase Modulated Full-Bridge Controllers
Adjustable Synchronous Rectification Timing for Highest Efficiency
LTC3723-1/
LTC3723-2
Synchronous Push-Pull and Full-Bridge Controllers
High Efficiency with On-Chip MOSFET Drivers
16
4440fb
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
For more information www.linear.com/LTC4440
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com/LTC4440
LT 0215 REV B • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 2003
工商网监
湘ICP备2023018690号
