APT4012BVFR

APT4012BVFR APT4012SVFR 400V 37A BVFR 0.120Ω D3PAK POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR • Faster Switching • Lower Leakage • Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • Avalanche Energy Rated • TO-247 or Surface Mount D3Pak G D S All Ratings: TC = 25°C unless otherwise specified. APT4012BVFR_SVFR UNIT Volts Amps 400 37 148 ±30 ±40 370 2.96 -55 to 150 300 37 30 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 400 37 0.12 250 1000 2 4 ±100 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA 1-2006 050-7271 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) APT Website - http://www.advancedpower.com nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT4012BVFR_SVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 37A @ 25°C VGS = 15V VDD = 200V ID = 37A @ 25°C RG = 1.6Ω MIN TYP MAX UNIT pF 4500 690 290 195 25 90 14 17 55 12 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts V/ns ns 37 148 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = -37A) 5 Peak Diode Recovery dv/dt Reverse Recovery Time (IS = -37A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -37A, di/dt = 100A/µs) Peak Recovery Current (IS = -37A, di/dt = 100A/µs) t rr Q rr IRRM 250 525 1.6 6.0 13 21 µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.34 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.90mH, R = 25Ω, Peak I = 37A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS ≤ -ID Cont. di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. 0.4 Z JC, THERMAL IMPEDANCE (°C/W) θ D=0.5 0.1 0.05 0.2 0.1 0.05 PDM 1-2006 0.01 0.005 0.02 0.01 Note: t1 t2 050-7271 Rev B SINGLE PULSE 0.001 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 Typical Performance Curves 100 7V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) APT4012BVFR_SVFR 100 VGS=15V 80 VGS=10V 6.5V 60 7V VGS=10V & 15V 80 6.5V 60 6V 6V 40 5.5V 5V 40 5.5V 5V 20 4.5V 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 20 4.5V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 100 ID, DRAIN CURRENT (AMPERES) TJ = -55°C TJ = +25°C TJ = +125°C 1.5 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 80 1.4 1.3 1.2 60 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @