BLC9G20LS-120VY

BLC9G20LS-120V Power LDMOS transistor Rev. 5 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f (MHz) (mA) (V) (W) 2-carrier W-CDMA 1805 to 1880 700 28 30 [1] IDq VDS PL(AV) D ACPR5M (dB) (%) (dBc) 19.2 31 33 [1] Gp Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.2 Features and benefits           Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical) Designed for broadband operation (1805 MHz to 1995 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 1995 MHz frequency range BLC9G20LS-120V Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 video decoupling 6 video decoupling 7 [1] Simplified outline 5 1 2 Graphic symbol 1, 2, 5, 6 6 3, 4 7 7 aaa-016345 3 4 [1] source Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLC9G20LS-120V Name Description Version - SOT1275-1 air cavity plastic earless flanged package; 6 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 6 +13 V Tstg storage temperature 65 +150 C - 225 C [1] junction temperature Tj [1] Conditions Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) BLC9G20LS-120V Product data sheet thermal resistance from junction to case Conditions Typ Unit Tcase = 80 C; PL = 30 W 0.47 K/W All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 2 of 15 BLC9G20LS-120V Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C per section, unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.2 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 120 mA 1.5 1.9 3.1 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 700 mA - 2.2 - V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 25 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 6 A - 4.3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 4.2 A - 0.12 -  Table 7. RF characteristics Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 % probability on the CCDF; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 700 mA; Tcase = 25 C; unless otherwise specified; in a water cooled class-AB test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 30 W 17.8 19.2 - dB D drain efficiency PL(AV) = 30 W 29 31 - % RLin input return loss PL(AV) = 30 W - 13 9 dB PL(AV) = 30 W - 33 28 dBc ACPR5M adjacent channel power ratio (5 MHz) 7. Test information 7.1 Ruggedness in class-AB operation The BLC9G20LS-120V is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 700 mA; PL = 100 W (CW); f = 1805 MHz. BLC9G20LS-120V Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 3 of 15 BLC9G20LS-120V Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data of the device; IDq = 700 mA; VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) Maximum power load 1805 1.6  j5.4 1.6  j4.2 169.6 59.4 16.3 1840 2.4  j6.0 1.5  j4.0 170.3 59.0 16.2 1880 2.7  j6.2 1.6  j4.1 168.0 59.6 16.5 1930 3.7  j7.6 1.4  j3.9 167.9 58.3 16.3 1960 3.8  j8.0 1.5  j4.2 166.8 57.3 16.5 1990 5.0  j7.9 1.4  j4.1 162.1 57.2 16.6 Maximum drain efficiency load 1805 1.6  j5.4 2.9  j2.6 117.0 70.1 18.6 1840 2.4  j6.0 2.8  j2.6 116.5 69.9 18.7 1880 2.7  j6.2 2.5  j2.4 110.7 69.8 19.0 1930 3.7  j7.6 2.5  j2.7 115.4 68.2 19.0 1960 3.8  j8.0 2.0  j2.6 113.6 67.5 19.0 1990 5.0  j7.9 2.0  j2.7 113.6 66.7 19.1 [1] ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. drain ZL gate ZS 001aaf059 Fig 1. BLC9G20LS-120V Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 4 of 15 BLC9G20LS-120V Power LDMOS transistor 7.3 VBW in a class-AB operation The BLC9G20LS-120V shows 75 MHz (typical) video bandwidth (IMD third-order intermodulation inflection point) in a class-AB test circuit in the 1805 MHz to 1880 MHz band at VDS = 28 V and IDq = 700 mA. aaa-017684 0 IMD (dBc) -20 IMD3 (1) (2) IMD5 (1) (2) -40 (1) (2) IMD7 -60 -80 1 10 caring spacing (MHz) 102 VDS = 28 V; IDq = 700 mA. (1) low (2) high Fig 2. BLC9G20LS-120V Product data sheet VBW capability in class-AB test circuit All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 5 of 15 BLC9G20LS-120V Power LDMOS transistor 7.4 Test circuit 50 mm 50 mm C4 C3 C10 C1 R1 C7 60 mm C2 C8 C9 C6 C5 aaa-017792 Printed-Circuit Board (PCB): Rogers RO4350B with a thickness of 0.76 mm. See Table 9 for a list of components. Fig 3. Component layout for test circuit Table 9. List of components See Figure 3 for component layout. Component Product data sheet Value Remarks C1, C7 multilayer ceramic chip capacitor 43 pF [1] C2 multilayer ceramic chip capacitor 3.9 pF [2] ATC 100A C3, C4, C5, C9 multilayer ceramic chip capacitor 1.0 F, 50 V [3] Murata 1.5 pF [1] ATC 600F [3] Murata C6 BLC9G20LS-120V Description multilayer ceramic chip capacitor C8 multilayer ceramic chip capacitor 220 nF, 50 V C10 electrolytic capacitor > 470 F, 50 V R1 resistor 2.2 , 1 % tolerance [1] American Technical Ceramics type 600F or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] Murata or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 ATC 600F SMD 1206 © Ampleon Netherlands B.V. 2017. All rights reserved. 6 of 15 BLC9G20LS-120V Power LDMOS transistor 7.5 Graphical data 7.5.1 Pulsed CW aaa-017685 22 aaa-017686 80 Gp (dB) ηD (%) 20 60 (3) (2) (1) 18 (1) (2) (3) 40 16 20 14 0 0 20 40 60 80 100 120 140 PL (W) 160 0 VDS = 28 V; IDq = 700 mA; tp = 100 s;  = 10 %. 20 40 (1) f = 1807.5 MHz (2) f = 1840.0 MHz (2) f = 1840.0 MHz (3) f = 1872.5 MHz (3) f = 1872.5 MHz Power gain as a function of output power; typical values BLC9G20LS-120V Product data sheet 80 100 120 140 PL (W) 160 VDS = 28 V; IDq = 700 mA; tp = 100 s;  = 10 %. (1) f = 1807.5 MHz Fig 4. 60 Fig 5. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 7 of 15 BLC9G20LS-120V Power LDMOS transistor 7.5.2 1-Carrier W-CDMA aaa-017687 21 aaa-017688 60 Gp (dB) ηD (%) 50 20 40 (3) (2) (1) 19 (3) (2) (1) 30 20 18 10 17 0 0 10 20 30 40 50 60 PL (W) 70 0 VDS = 28 V; IDq = 700 mA. 10 20 (1) f = 1807.5 MHz (2) f = 1840.0 MHz (2) f = 1840.0 MHz (3) f = 1872.5 MHz (3) f = 1872.5 MHz Power gain as a function of output power; typical values Fig 7. aaa-017689 -20 ACPR5M (dBc) 50 60 PL (W) 70 Drain efficiency as a function of output power; typical values aaa-017690 8 PAR (dB) -30 7 (3) (2) (1) -40 (1) (2) (3) 6 -50 5 -60 4 0 10 20 30 40 50 60 PL (W) 70 0 VDS = 28 V; IDq = 700 mA. 10 20 (1) f = 1807.5 MHz (2) f = 1840.0 MHz (2) f = 1840.0 MHz (3) f = 1872.5 MHz (3) f = 1872.5 MHz Adjacent channel power ratio (5 MHz) as a function of output power; typical values BLC9G20LS-120V Product data sheet 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 700 mA. (1) f = 1807.5 MHz Fig 8. 40 VDS = 28 V; IDq = 700 mA. (1) f = 1807.5 MHz Fig 6. 30 Fig 9. Peak-to-average ratio as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 8 of 15 BLC9G20LS-120V Power LDMOS transistor 7.5.3 2-Carrier W-CDMA aaa-017691 20 aaa-017692 60 Gp (dB) 19.5 ηD (%) 50 (2) 19 40 (1) 18.5 30 18 20 17.5 10 17 (2) (1) 0 0 10 20 30 40 50 60 PL (W) 70 0 VDS = 28 V; IDq = 700 mA; 5 MHz carrier spacing. 10 20 (1) f = 1810 MHz (2) f = 1875 MHz (2) f = 1875 MHz 50 60 PL (W) 70 Fig 11. Drain efficiency as a function of output power; typical values aaa-017693 -20 ACPR5M (dBc) 40 VDS = 28 V; IDq = 700 mA; 5 MHz carrier spacing. (1) f = 1810 MHz Fig 10. Power gain as a function of output power; typical values 30 aaa-017694 18 RLin (dB) (1) 16 -30 14 (2) (1) -40 (2) 12 -50 10 -60 8 0 10 20 30 40 50 60 PL (W) 70 0 VDS = 28 V; IDq = 700 mA; 5 MHz carrier spacing. 10 20 (1) f = 1810 MHz (2) f = 1875 MHz (2) f = 1875 MHz BLC9G20LS-120V Product data sheet 40 50 60 PL (W) 70 VDS = 28 V; IDq = 700 mA; 5 MHz carrier spacing. (1) f = 1810 MHz Fig 12. Adjacent channel power ratio (5 MHz) as a function of output power; typical values 30 Fig 13. Input return loss as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 9 of 15 BLC9G20LS-120V Power LDMOS transistor 8. Package outline Air cavity plastic earless flanged package; 6 leads SOT1275-1 D F A 7 w1 D1 B L U1 b1 v B A c H1 5 1 2 6 y Į Z1 Z U2 H E1 E A 3 4 b e Q w2 0 B 5 10 mm y v w1 w2 0.1 0.5 0.5 0.5 U2 Z Z1 Į scale Dimensions Unit mm A max 4.01 nom min 3.40 b b1 3.94 1.14 c D D1 E 0.178 20.42 20.37 9.80 E1 e 9.75 F H H1 L Q(1) U1 1.14 19.53 12.80 25.40 1.68 20.70 9.91 3.17 5.79 65° 0.94 19.33 12.60 25.20 1.45 20.50 9.70 2.67 5.29 61° 8.89 3.68 0.89 0.127 20.12 20.17 9.50 9.55 Note 1. Dimension Q is measured 0.1 mm away from the flange. 2. Ringframe and/or ringframe glue shall not overhang at the side of the flange. Outline version References IEC JEDEC JEITA sot1275-1_po European projection Issue date 16-11-15 17-04-13 SOT1275-1 Fig 14. Package outline SOT1275-1 BLC9G20LS-120V Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 10 of 15 BLC9G20LS-120V Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 10. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2] [1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after exposure to an ESD pulse of 750 V. [2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails after exposure to an ESD pulse of 4000 V. 10. Abbreviations Table 11. BLC9G20LS-120V Product data sheet Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor MTF Median Time to Failure PAR Peak-to-Average Ratio SMD Surface Mounted Device VBW Videoband Width VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 11 of 15 BLC9G20LS-120V Power LDMOS transistor 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLC9G20LS-120V v.5 20170524 Product data sheet - BLC9G20LS-120V v.4 Modifications: • • • Table 2 on page 2: change simplified outline Table 3 on page 2: change version to SOT1275-1 Figure 14 on page 10: change package outline drawing to SOT1275-1 BLC9G20LS-120V v.4 20161202 Product data sheet - BLC9G20LS-120V v.3 BLC9G20LS-120V v.3 20151005 Product data sheet - BLC9G20LS-120V v.2 BLC9G20LS-120V v.2 20150901 Objective data sheet - BLC9G20LS-120V v.1 BLC9G20LS-120V v.1 20150703 Objective data sheet - - BLC9G20LS-120V Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 12 of 15 BLC9G20LS-120V Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLC9G20LS-120V Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 13 of 15 BLC9G20LS-120V Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLC9G20LS-120V Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 24 May 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 14 of 15 BLC9G20LS-120V Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.5.1 7.5.2 7.5.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 VBW in a class-AB operation . . . . . . . . . . . . . . 5 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Handling information. . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2017. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 24 May 2017 Document identifier: BLC9G20LS-120V