BLF175,112

BLF175 HF/VHF power MOS transistor Rev. 4 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability ook, halfpage • Withstands full load mismatch 1 4 • Gold metallization ensures excellent reliability. d g DESCRIPTION MBB072 Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. 2 3 MSB057 The transistor has a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook 'General' section for further information. Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PINNING - SOT123A PIN WARNING DESCRIPTION 1 drain 2 source 3 gate 4 source s Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION class-A f (MHZ) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) d3 (dB) 28 50 800 8 (PEP) >24 − 24 typ. 28 > −40 typ. −44 < −40 typ. −64 24 24 Note 1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. 2003 Jul 22 6 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 MGP069 MGP070 40 0 handbook, halfpage handbook, halfpage Gp (dB) d3 (dB) 30 −20 20 −40 10 −60 −80 0 0 5 10 15 20 PL (W) PEP 0 5 10 15 20 PL (W) PEP Class-A operation; VDS = 50 V; IDQ = 0.8 A; RGS = 24 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. solid line: Th = 25 °C. dotted line: Th = 70 °C. Class-A operation; VDS = 50 V; IDQ = 0.8 A; RGS = 24 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. solid line: Th = 25 °C. dotted line: Th = 70 °C. Fig.9 Fig.10 Third order intermodulation distortion as a function of load power; typical values. Power gain as a function of load power; typical values. MGP071 MGP072 −20 40 handbook, halfpage handbook, halfpage Gp (dB) d3 (dB) 30 −40 20 10 −60 0 0 10 20 30 f (MHz) 40 0 10 20 30 f (MHz) 40 Class-A operation; VDS = 50 V; IDQ = 0.8 A; PL = 8 W (PEP); RGS = 24 Ω; f1 − f2 = 1 MHz. Class-A operation; VDS = 50 V; IDQ = 0.8 A; Fig.11 Power gain as a function of frequency; typical values. Fig.12 Third order intermodulation distortion as a function of frequency; typical values. 2003 Jul 22 PL = 8 W (PEP); RGS = 24 Ω; f1 − f2 = 1 MHz. 7 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 C4 R2 handbook, full pagewidth C5 D.U.T. T1 50 Ω input L4 C9 C1 L2 R1 C6 C7 L1 R3 C3 L3 C8 +VG +VD MGP073 f = 28 MHz. Fig.13 Test circuit for class-A operation. 2003 Jul 22 50 Ω output C2 8 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 List of components (class-A test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 multilayer ceramic chip capacitor (note 1) 39 pF C2 multilayer ceramic chip capacitor 3 × 10 nF 2222 852 47103 C3, C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C5 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C8 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109 C9 multilayer ceramic chip capacitor (note 1) 24 pF L1 4 turns enamelled 0.6 mm copper wire 86 nH length 3.3 mm; int. dia. 5 mm; leads 2 × 2 mm L2 36 turns enamelled 0.7 mm copper wire wound on a rod grade 4B1 Ferroxcube drain choke 20 µH length 30 mm; int. dia. 5 mm L3 grade 3B Ferroxcube wideband RF choke L4 8 turns enamelled 1 mm copper wire 189 nH R1 0.4 W metal film resistor 24 Ω R2 0.4 W metal film resistor 1500 Ω R3 0.4 W metal film resistor 10 Ω T1 4 : 1 transformer; 18 turns twisted pair of 0.25 mm copper wire with 10 twists per cm, wound on a grade 4C6 toroidal core 4330 030 30031 4312 020 36640 length 9.5 mm; int. dia. 5 mm; leads 2 × 3 mm dimensions 9 × 6 × 3 mm 4322 020 97171 Note 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2003 Jul 22 9 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 100 handbook, full pagewidth mounting screw 90 strap strap L3 +VDD +VG C7 L1 C6 C8 R3 C3 L2 R1 T1 C5 L4 C2 C9 C1 R2 C4 MGP074 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts. Fig.14 Component layout for 28 MHz class-A test circuit. 2003 Jul 22 10 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in SSB operation in a common source circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. PL (W) f (MHz) VDS (V) IDQ (mA) Gp (dB) ηD (%) d3 (dB)(1) d5 (dB)(1) RGS (Ω) 30 (PEP) 28 50 150 typ. 24 typ. 40(2) typ. −35 typ. −40 22 Notes 1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. 2. 2-tone efficiency. Ruggedness in class-AB operation The BLF175 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at PL = 30 W single tone under the following conditions: VDS = 50 V; f = 28 MHz. MGP076 MGP077 28 60 handbook, halfpage handbook, halfpage Gp (dB) ηD (%) 26 50 24 40 22 30 20 20 0 20 40 PL (W) PEP 60 0 20 40 PL (W) PEP 60 Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.15 Power gain as a function of load power; typical values. Fig.16 Two tone efficiency as a function of load power; typical values. 2003 Jul 22 11 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 MGP078 MGP079 0 0 handbook, halfpage handbook, halfpage d3 (dB) d5 (dB) −20 −20 −40 −40 −60 0 20 40 PL (W) PEP −60 60 0 20 40 PL (W) PEP 60 Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.17 Third order intermodulation distortion as a function of load power; typical values. Fig.18 Fifth order intermodulation distortion as a function of load power; typical values. C10 handbook, full pagewidth C1 50 Ω output C2 ,, ,, ,, D.U.T. C3 L1 C4 C7 L3 R1 C5 R2 50 Ω output C6 C8 L4 R3 L6 +VG +VD C9 C12 MGP080 f = 28 MHz. Fig.19 Test circuit for class-AB operation. 2003 Jul 22 C11 L5 L2 12 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 List of components (class-AB test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C10 multilayer ceramic chip capacitor (note 1) 62 pF C2, C4, C8, C11 film dielectric trimmer 5 to 60 pF C3 multilayer ceramic chip capacitor (note 1) 51 pF C5, C6, C9 multilayer ceramic chip capacitor 100 nF C7 multilayer ceramic chip capacitor (note 1) 10 pF C12 aluminium electrolytic capacitor 10 µF, 63 V L1 9 turns enamelled 1 mm copper wire 280 nH L2, L3 stripline (note 2) 30 Ω length 10 mm; width 6 mm L4 14 turns enamelled 1 mm copper wire 1650 nH length 20 mm; int. dia. 12 mm; leads 2 × 2 mm L5 10 turns enamelled 1 mm copper wire 380 nH length 13 mm; int. dia. 7 mm; leads 2 × 3 mm L6 grade 3B Ferroxcube wideband RF choke R1 0.4 W metal film resistor 22 Ω R2 0.4 W metal film resistor 1 MΩ R3 0.4 W metal film resistor 10 Ω CATALOGUE NO. 2222 809 07011 2222 852 47104 2222 030 28109 length 11 mm; int. dia. 6 mm; leads 2 × 4 mm 4312 020 36640 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5), thickness 1.6 mm. 2003 Jul 22 13 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 150 handbook, full pagewidth mounting screw strap strap strap rivet 70 R3 C9 R2 L6 C6 C5 L1 C2 L4 R1 L5 L2 C1 C12 L3 C3 C10 C7 C8 C4 C11 MGP081 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts. Fig.20 Component layout for 28 MHz class-AB test circuit. 2003 Jul 22 14 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 MGP084 MGP083 30 50 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 20 40 ri 10 RL 30 0 20 xi −10 10 −20 XL 0 0 10 20 30 f (MHz) 40 0 10 20 f (MHz) 30 Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS = 22 Ω. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS = 22 Ω. Fig.21 Input impedance as a function of frequency (series components); typical values. Fig.22 Load impedance as a function of frequency (series components); typical values. MGP085 30 handbook, halfpage Gp (dB) 20 10 0 0 10 20 f (MHz) 30 Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS = 22 Ω. Fig.23 Power gain as a function of frequency; typical values. 2003 Jul 22 15 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 APPLICATION INFORMATION FOR CLASS-B OPERATION RF performance in SSB operation in a common source circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) RGS (Ω) 108 50 30 30 typ. 20 typ. 65 10 MGP086 10 MGP087 50 ZL handbook, halfpage handbook, halfpage Zi (Ω) (Ω) 40 5 ri 30 XL 20 RL 0 10 xi −5 0 100 f (MHz) 0 200 0 100 f (MHz) 200 Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS = 10 Ω. Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS = 10 Ω. Fig.24 Input impedance as a function of frequency (series components); typical values. Fig.25 Load impedance as a function of frequency (series components); typical values. 2003 Jul 22 16 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 MGP088 30 handbook, halfpage Gp (dB) 20 10 0 0 100 f (MHz) 200 Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS = 10 Ω. Fig.26 Power gain as a function of frequency; typical values. 2003 Jul 22 17 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 BLF175 scattering parameters VDS = 50 V; ID = 100 mA; note 1. s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.86 −110.20 36.90 114.20 0.02 25.20 0.64 −84.90 10 0.83 −139.40 20.39 93.30 0.02 5.10 0.55 −112.00 20 0.85 −155.70 9.82 72.60 0.02 −13.40 0.60 −129.30 30 0.88 −161.50 5.96 59.30 0.02 −24.70 0.69 −138.00 40 0.90 −164.90 3.98 49.30 0.02 −31.70 0.76 −144.30 50 0.92 −167.10 2.83 41.90 0.01 −35.80 0.82 −149.30 60 0.94 −169.00 2.11 36.00 0.01 −36.80 0.86 −153.50 70 0.96 −170.70 1.63 31.20 0.01 −33.70 0.89 −157.00 80 0.96 −172.20 1.29 27.40 0.00 −23.00 0.91 −159.90 90 0.97 −173.40 1.04 24.20 0.00 3.30 0.92 −162.40 100 0.97 −174.30 0.86 21.70 0.00 42.50 0.94 −164.50 125 0.99 −176.50 0.57 16.40 0.01 81.60 0.95 −168.80 150 0.99 −178.10 0.40 13.40 0.01 88.70 0.97 −171.90 175 0.99 −179.80 0.30 11.60 0.02 90.70 0.98 −174.50 200 1.00 179.20 0.23 11.00 0.02 90.80 0.98 −176.70 250 1.00 177.00 0.15 11.70 0.03 90.50 0.99 179.80 300 1.00 175.10 0.11 16.70 0.03 89.60 0.99 176.90 350 0.99 173.30 0.08 24.10 0.04 88.30 0.99 174.30 400 1.00 171.80 0.07 33.10 0.05 88.00 0.99 171.90 450 0.99 170.10 0.07 42.70 0.05 87.80 0.99 169.60 500 0.99 168.50 0.07 51.90 0.06 86.50 0.99 167.40 600 0.99 165.40 0.07 64.20 0.07 84.90 0.99 163.10 700 0.99 162.30 0.09 70.60 0.09 83.10 0.98 158.90 800 0.99 158.90 0.10 73.80 0.10 82.20 0.98 154.80 900 0.99 155.30 0.12 74.90 0.12 80.70 0.97 150.60 1000 0.98 151.80 0.14 76.40 0.14 79.80 0.97 146.20 Note 1. For more extensive s-parameters see internet website: http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast 2003 Jul 22 18 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F D1 q C B U1 w2 M C M c H b 4 3 α A U2 p U3 w1 M A M B M 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.78 9.42 2.72 2.31 20.71 19.93 3.33 3.04 4.63 4.11 18.42 24.87 24.64 6.48 6.22 9.78 9.39 0.25 0.51 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.383 0.385 0.107 0.815 0.373 0.371 0.091 0.785 0.131 0.120 0.182 0.980 0.725 0.162 0.970 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION 45° ISSUE DATE 99-03-29 SOT123A 2003 Jul 22 0.255 0.385 0.010 0.020 0.245 0.370 α 19 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Jul 22 20 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp21 Date of release: 2003 Jul 22 Document order number: 9397 750 11582