BLF278/01,112

BLF278 VHF push-pull power MOS transistor Rev. 5 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product Specification VHF push-pull power MOS transistor FEATURES BLF278 PINNING - SOT262A1 • High power gain PIN DESCRIPTION • Easy power control 1 drain 1 • Good thermal stability 2 drain 2 • Gold metallization ensures excellent reliability. 3 gate 1 4 gate 2 5 source APPLICATIONS • Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. 1 2 d g s g 5 3 4 Top view This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. d 5 CAUTION MAM098 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) CW, class-B 108 50 300 >20 >60 CW, class-C 108 50 300 typ. 18 typ. 80 CW, class-AB 225 50 250 >14 typ. 16 >50 typ. 55 MODE OF OPERATION WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Sep 19 2 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section VDS drain-source voltage − 125 V VGS gate-source voltage − ±20 V ID drain current (DC) − 18 A Ptot total power dissipation − 500 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C Tmb ≤ 25 °C; total device; both sections equally loaded THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction total device; both sections to mounting base equally loaded. max. 0.35 K/W Rth mb-h thermal resistance from mounting base to heatsink max. 0.15 K/W total device; both sections equally loaded. MRA988 100 MGE616 500 handbook, halfpage handbook, halfpage Ptot (W) ID (A) 400 (2) (1) (2) (1) 300 10 200 100 1 1 10 0 500 100 0 40 80 Total device; both sections equally loaded. (1) Current is this area may be limited by RDSon. (2) Tmb = 25 °C. 160 Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 2003 Sep 19 120 Th (°C) VDS (V) Fig.3 Power derating curves. 3 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 100 mA 125 − − V IDSS drain-source leakage current VGS = 0; VDS = 50 V − − 2.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage VDS = 10 V; ID = 50 mA 2 − 4.5 V ∆VGS gate-source voltage difference of both sections VDS = 10 V; ID = 50 mA − − 100 mV gfs forward transconductance VDS = 10 V; ID = 5 A 4.5 6.2 − S gfs1/gfs2 forward transconductance ratio of both sections VDS = 10 V; ID = 5 A 0.9 − 1.1 RDSon drain-source on-state resistance VGS = 10 V; ID = 5 A − 0.2 0.3 Ω IDSX drain cut-off current VGS = 10 V; VDS = 10 V − 25 − A Cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 480 − pF Cos output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 190 − pF Crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 14 − pF Cd-f drain-flange capacitance − 5.4 − pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C D 2.2 2.3 Q 3.5 3.6 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 2003 Sep 19 4 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE623 0 MGE622 30 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) −1 20 −2 −3 10 −4 −5 10−2 10−1 0 1 ID (A) 0 10 5 10 VGS (V) 15 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. Fig.5 MGE621 400 Drain current as a function of gate-source voltage; typical values per section. MGE615 1200 handbook, halfpage handbook, halfpage RDSon (mΩ) C (pF) 300 800 200 Cis 400 100 Cos 0 0 0 50 100 0 150 20 Tj (°C) VGS = 10 V; ID = 5 A. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature; typical values per section. 2003 Sep 19 5 40 VDS (V) 60 Input and output capacitance as functions of drain-source voltage; typical values per section. Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE620 400 handbook, halfpage Crs (pF) 300 200 100 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. APPLICATION INFORMATION Class-B operation RF performance in CW operation in a common source push-pull test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RGS = 4 Ω per section; optimum load impedance per section = 3.2 + j4.3 Ω (VDS = 50 V). f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) ηD (%) CW, class-B 108 50 2 × 0.1 300 >20 typ. 22 >60 typ. 70 CW, class-C 108 50 VGS = 0 300 typ. 18 typ. 80 MODE OF OPERATION Ruggedness in class-B operation The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the following conditions: VDS = 50 V; f = 108 MHz at rated load power. 2003 Sep 19 6 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE682 30 MGE683 80 handbook, halfpage handbook, halfpage ηD (%) Gp (dB) (2) (1) (1) 60 20 (2) (1) 40 (2) 10 20 0 0 200 400 PL (W) 0 600 0 200 400 PL (W) 600 Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section). (1) Th = 25 °C. (2) Th = 70 °C. Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section). (1) Th = 25 °C. (2) Th = 70 °C. Fig.9 Fig.10 Efficiency as a function of load power; typical values. Power gain as a function of load power; typical values. MGE684 600 handbook, halfpage PL (W) (1) 400 (2) 200 0 0 5 10 Pi (W) 15 Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section). (1) Th = 25 °C. (2) Th = 70 °C. Fig.11 Load power as a function of input power; typical values. 2003 Sep 19 7 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... C21 R2 C8 A C12 R8 L11 R3 C22 C13 C9 C17 ,,,, ,,,, ,,,, ,,,, R4 L12 D.U.T. L9 50 Ω input C3 T1 C1 R1 8 C2 L1 C6 C5 L13 L17 L19 C31 C7 C28 C27 C26 C29 C33 R10 C34 L4 L6 L8 L10 L14 L18 L20 R5 L15 C10 50 Ω output L22 C30 C4 L2 ,, L21 L3 L5 L7 Philips Semiconductors C16 VHF push-pull power MOS transistor 2003 Sep 19 +VDD1 C20 handbook, full pagewidth C32 ,, L23 MGE688 C23 C14 C18 A R6 C15 R9 C35 +VDD1 L16 R11 IC1 C24 R7 C37 C11 C19 C25 Fig.12 Class-B test circuit at f = 108 MHz. BLF278 +VDD2 Product Specification C36 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 List of components (see Figs 12 and 13). COMPONENT DESCRIPTION VALUE C1, C2, C33, C34 multilayer ceramic chip capacitor; note 1 22 pF, 500 V C3, C4 100 pF + 68 pF in parallel, 500 V multilayer ceramic chip capacitor; note 1 C5, C6, C28 film dielectric trimmer 5 to 60 pF C7 multilayer ceramic chip capacitor; note 1 2 × 100 pF + 1 × 120 pF in parallel, 500 V C8, C11, C12, C15, C16, C19, C36 multilayer ceramic chip capacitor 100 nF, 500 V C9, C10, C13, C14, C20, C25 multilayer ceramic chip capacitor; note 1 1 nF, 500 V C17, C18, C22, C23 multilayer ceramic chip capacitor; note 1 470 pF, 500 V DIMENSIONS 2222 809 08003 2222 852 47104 C21, C24, C35 electrolytic capacitor 10 µF, 63 V C26 multilayer ceramic chip capacitor; note 1 2 × 15 pF + 1 × 18 pF in parallel, 500 V C27 multilayer ceramic chip capacitor; note 1 3 × 15 pF in parallel, 500 V C29 multilayer ceramic chip capacitor; note 1 2 × 18 pF + 1 × 15 pF in parallel, 500 V C30 film dielectric trimmer 2 to 18 pF C31, C32 multilayer ceramic chip capacitor; note 1 3 × 43 pF in parallel, 500 V L1, L2 stripline; note 2 43 Ω length 57.5 mm width 6 mm L3, L4 stripline; note 2 43 Ω length 29.5 mm width 6 mm L5, L6 stripline; note 2 43 Ω length 14 mm width 6 mm L7, L8 stripline; note 2 43 Ω length 6 mm width 6 mm L9, L10 stripline; note 2 43 Ω length 17.5 mm width 6 mm L11, L16 2 × grade 3B Ferroxcube wideband HF chokes in parallel L12, L15 4 turns enamelled 2 mm copper wire 85 nH length 13.5 mm int. dia. 10 mm leads 2 × 7 mm L13, L14 stripline; note 2 43 Ω length 19.5 mm width 6 mm 2003 Sep 19 CATALOGUE NO. 2222 809 09006 4312 020 36642 9 Philips Semiconductors Product Specification VHF push-pull power MOS transistor COMPONENT BLF278 DESCRIPTION VALUE DIMENSIONS L17, L18 stripline; note 2 43 Ω length 24.5 mm width 6 mm L19, L20 stripline; note 2 43 Ω length 66 mm width 6 mm L21, L23 stripline; note 2 50 Ω length 160 mm width 4.8 mm L22 semi-rigid cable; note 3 50 Ω ext. dia. 3.6 mm outer conductor length 160 mm R1 metal film resistor 10 Ω, 0.4 W R2, R7 10 turn potentiometer 50 kΩ R3, R6 metal film resistor 3 × 12.1 Ω in parallel, 0.4 W R4, R5 metal film resistor 10 Ω; 0.4 W R8, R9 metal film resistor 10 Ω ±5%, 1 W R10 metal film resistor 4 × 10 Ω in parallel, 1 W R11 metal film resistor 5.11 kΩ, 1 W IC1 voltage regulator 78L05 T1 1:1 Balun; 7 turns type 4C6 50 Ω coaxial cable wound around toroid 14 × 9 × 5 mm CATALOGUE NO. 4322 020 90770 Notes 1. American Technical Ceramics capacitor, type 100B or capacitor of same quality. 2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass PTFE dielectric (εr = 2.2), thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm. 3. L22 is soldered on to stripline L21. 2003 Sep 19 10 Philips Semiconductors Product Specification VHF push-pull power MOS transistor handbook, full pagewidth BLF278 150 130 strap strap strap strap strap 100 strap strap strap C20 IC1 V DD1 C11 R11 C36 50 Ω input T1 C35 C8 slider R2 C12 C1 C3 R1 C2 C4 L3 L1 C5 C22 R2 and R7 C9 C13 R3 R4 C7 L5 L7 C17 L4 C15 slider R7 L6 L8 C21 50 Ω output V DD1 L21 L12 C31 L9 C6 L2 L22 L11 C16 R8 L11 L10 R5 R6 L13 C26 L14 L15 C10 C14 C18 C23 L17 C27 L18 C33 L19 C29 C28 L20 C30 C34 C32 L23 V DD2 L16 R9 L16 C19 R10 C24 C25 MBC438 Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets. Fig.13 Printed-circuit board and component layout for 108 MHz class-B test circuit. 2003 Sep 19 11 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE685 MGE686 8 2 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri RL 1 6 0 4 XL −1 2 xi −2 0 25 75 125 f (MHz) 25 175 75 125 f (MHz) 175 Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; RGS = 4 Ω (per section); PL = 300 W. Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; RGS = 4 Ω (per section); PL = 300 W. Fig.14 Input impedance as a function of frequency (series components); typical values per section. Fig.15 Load impedance as a function of frequency (series components); typical values per section. MGE687 30 handbook, halfpage Gp (dB) 20 handbook, halfpage 10 Zi ZL MBA379 0 25 75 125 f (MHz) 175 Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; RGS = 4 Ω (per section); PL = 300 W. Fig.17 Power gain as a function of frequency; typical values per section. Fig.16 Definition of MOS impedance. 2003 Sep 19 12 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 Class-AB operation RF performance in CW operation in a common source push-pull test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RGS = 2.8 Ω per section; optimum load impedance per section = 0.74 + j2 Ω; (VDS = 50 V). MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) ηD (%) CW, class-AB 225 50 2 × 0.5 250 >14 typ. 16 >50 typ. 55 Ruggedness in class-AB operation The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the following conditions: VDS = 50 V; f = 225 MHz at rated output power. 2003 Sep 19 13 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE614 MGE612 60 20 handbook, halfpage handbook, halfpage (1) ηD (%) (2) Gp (dB) (1) (2) 40 10 20 0 0 0 100 200 0 300 PL (W) 100 200 PL (W) 300 Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz; ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section). (1) Th = 25 °C. (2) Th = 70 °C. Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz; ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section). (1) Th = 25 °C. (2) Th = 70 °C. Fig.18 Power gain as a function of load power; typical values. Fig.19 Efficiency as a function of load power; typical values. MGE613 400 handbook, halfpage PL (W) 300 (1) (2) 200 100 0 0 5 10 Pi (W) 15 Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz; ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section). (1) Th = 25 °C. (2) Th = 70 °C. Fig.20 Load power as a function of input power; typical values. 2003 Sep 19 14 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... C23 R2 R8 C10 A L14 C15 R3 C24 C11 C8 ,,, ,,, 15 ,,, ,,, R4 C3 L1 50 Ω input C16 L4 C1 R1 L2 C2 C5 C4 L3 ,,,, L15 D.U.T. L12 L6 L8 L10 C6 L20 ,,,, C7 C21 C28 C20 L7 L9 L11 L5 L18 L13 R5 L19 C29 L21 L16 C9 C31 ,, L22 C33 R10 ,, L23 C30 C34 C32 50 Ω output Philips Semiconductors C22 C14 VHF push-pull power MOS transistor handbook, full pagewidth 2003 Sep 19 +VDD1 L24 MGE617 C17 C12 C25 C18 A R6 C13 C35 +VDD1 L17 R9 R11 IC1 R7 C38 C37 C26 C36 C19 C27 +VDD2 Product Specification BLF278 Fig.21 Class-AB test circuit at f = 225 MHz. Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 List of components (see Figs 21 and 22). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor; note 1 27 pF, 500 V C3, C4, C31, C32 multilayer ceramic chip capacitor; note 1 3 × 18 pF in parallel, 500 V C5 film dielectric trimmer 4 to 40 pF 2222 809 08002 C6, C30 film dielectric trimmer 2 to 18 pF 2222 809 09006 C7 multilayer ceramic chip capacitor; note 1 100 pF, 500 V C8, C9, C15, C18 MKT film capacitor 1 µF, 63 V 2222 371 11105 C10, C13, C14, C19, C36 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C11, C12 multilayer ceramic chip capacitor; note 1 2 × 1 nF in parallel, 500 V C16, C17 electrolytic capacitor 220 µF, 63 V C20 multilayer ceramic chip capacitor; note 1 3 × 33 pF in parallel, 500 V C21 film dielectric trimmer 2 to 9 pF C22, C27, C37, C38 multilayer ceramic chip capacitor; note 1 1 nF, 500 V C23, C26, C35 electrolytic capacitor 10 µF, 63 V C24, C25 multilayer ceramic chip capacitor; note 1 2 × 470 pF in parallel, 500 V C28 multilayer ceramic chip capacitor; note 1 2 × 10 pF + 1 × 18 pF in parallel, 500 V C29 multilayer ceramic chip capacitor; note 1 2 × 5.6 pF in parallel, 500 V C33, C34 multilayer ceramic chip capacitor; note 1 5.6 pF, 500 V L1, L3, L22, L24 stripline; note 2 50 Ω length 80 mm width 4.8 mm L2, L23 semi-rigid cable; note 3 50 Ω ext. dia. 3.6 mm outer conductor length 80 mm L4, L5 stripline; note 2 43 Ω length 24 mm width 6 mm L6, L7 stripline; note 2 43 Ω length 14.5 mm width 6 mm L8, L9 stripline; note 2 43 Ω length 4.4 mm width 6 mm L10, L11 stripline; note 2 43 Ω length 3.2 mm width 6 mm L12, L13 stripline; note 2 43 Ω length 15 mm width 6 mm 2003 Sep 19 16 2222 809 09005 Philips Semiconductors Product Specification VHF push-pull power MOS transistor COMPONENT BLF278 DESCRIPTION VALUE DIMENSIONS L14, L17 2 × grade 3B Ferroxcube wideband HF chokes in parallel L15, L16 13⁄4 turns enamelled 2 mm copper wire 40 nH int. dia. 10 mm leads 2 × 7 mm space 1 mm L18, L19 stripline; note 2 43 Ω length 13 mm width 6 mm L20, L21 stripline; note 2 43 Ω length 29.5 mm width 6 mm R1 metal film resistor 10 Ω, 0.4 W R2, R7 10 turns potentiometer 50 kΩ R3, R6 metal film resistor 1 kΩ, 0.4 W R4, R5 metal film resistor 2 × 5.62 Ω, in parallel, 0.4 W R8, R9 metal film resistor 10 Ω ±5%, 1 W R10 metal film resistor 4 × 42.2 Ω in parallel, 1 W R11 metal film resistor 5.11 kΩ, 1 W IC1 voltage regulator 78L05 CATALOGUE NO. 4312 020 36642 Notes 1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass reinforced PTFE dielectric (εr = 2.2), thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm. 3. L2 and L23 are soldered on to striplines L1 and L24 respectively. 2003 Sep 19 17 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 130 119 handbook, full pagewidth strap strap strap strap Hollow rivets Hollow rivets 100 strap strap strap strap C24 VDD1 R11 C38 L2 C35 slider R2 L1 C1 50 Ω input to R2,R7 C36 C16 IC1 C3 R1 C2 C37 C11 C8 C10 R3 R4 L4 C6 L6 L8 L10 C5 C7 L7 L9 L11 L5 C4 C13 R6 L3 slider R7 C15 L15 L12 C20 L13 R5 C12 C18 C17 C23 L22 VDD1 C30 C31C33 L18 C28 L20 C21 C29 L19 L21 C34 C32 L16 C9 C22 C14 L14 R8 L14 R10 50 Ω output VDD2 L17 R9 L17 C19 C25 L23 L24 C26 C27 MBC436 Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets. Fig.22 Printed-circuit board and component layout for 225 MHz class-AB test circuit. 2003 Sep 19 18 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 MGE611 2 MGE625 3 handbook, halfpage handbook, halfpage zi (Ω) ZL (Ω) 1 ri XL 2 0 xi 1 RL −1 –2 150 200 f (MHz) 0 150 250 200 f (MHz) 250 Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; RGS = 2.8 Ω (per section); PL = 250 W. Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; RGS = 2.8 Ω (per section); PL = 250 W. Fig.23 Input impedance as a function of frequency (series components); typical values per section. Fig.24 Load impedance as a function of frequency (series components); typical values per section. MGE624 20 handbook, halfpage Gp (dB) handbook, halfpage 10 Zi ZL MBA379 0 150 200 f (MHz) 250 Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; RGS = 2.8 Ω (per section); PL = 250 W. Fig.26 Power gain as a function of frequency; typical values per section. Fig.25 Definition of MOS impedance. 2003 Sep 19 19 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 BLF278 scattering parameters VDS = 50 V; ID = 500 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.87 −142.1 60.05 104.3 0.00 −19.4 0.83 160.9 10 0.88 −159.8 32.09 91.4 0.00 0.68 167.5 165.8 20 0.88 −169.0 15.70 77.3 0.01 13.4 0.62 177.6 30 0.88 −171.2 9.98 68.4 0.01 3.4 0.64 −175.8 40 0.89 −172.2 6.99 61.0 0.01 −4.4 0.66 −171.2 50 0.91 −172.9 5.24 55.0 0.01 −10.3 0.70 −168.1 60 0.92 −173.5 4.08 49.6 0.01 −15.0 0.74 −166.8 70 0.93 −174.1 3.26 44.9 0.01 −18.3 0.78 −166.5 80 0.94 −174.7 2.66 41.0 0.01 −19.8 0.80 −166.5 90 0.95 −175.2 2.22 37.5 0.00 −19.7 0.83 −166.7 100 0.95 −175.7 1.88 34.0 0.00 −18.0 0.85 −167.4 125 0.97 −176.9 1.27 26.8 0.00 −1.9 0.88 −169.4 150 0.97 −177.9 0.91 22.7 0.00 35.3 0.91 −170.0 175 0.98 −178.7 0.69 19.5 0.00 65.3 0.94 −170.8 200 0.98 −179.5 0.54 16.0 0.00 78.0 0.95 −172.4 250 0.99 179.2 0.35 12.1 0.01 86.7 0.96 −174.0 300 0.99 178.1 0.25 9.1 0.01 87.8 0.98 −175.5 350 0.99 177.1 0.19 8.2 0.01 90.3 0.98 −176.5 400 0.99 176.1 0.14 7.2 0.01 91.4 0.99 −177.6 450 0.99 175.1 0.11 8.1 0.02 92.2 0.99 −178.3 500 0.99 174.2 0.09 9.7 0.02 91.5 0.99 −179.2 600 0.99 172.4 0.07 14.8 0.02 91.4 0.99 179.5 700 0.99 170.7 0.05 24.0 0.03 91.6 0.99 178.3 800 0.99 168.9 0.04 35.6 0.03 92.5 1.00 177.1 900 0.99 167.1 0.04 46.0 0.04 93.1 1.00 176.0 1000 0.99 165.2 0.04 60.3 0.04 94.1 1.00 175.0 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast. 2003 Sep 19 20 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1 D A F D1 U1 B q C w2 M C M H1 1 H c 2 p U2 E1 E 5 A 3 w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.77 5.00 5.85 5.58 0.16 0.10 inches D D1 e E E1 22.17 21.98 10.27 10.29 11.05 21.46 21.71 10.05 10.03 F H 1.78 1.52 H1 21.08 17.02 19.56 16.51 p Q q U1 U2 w1 w2 w3 3.28 3.02 2.85 2.59 27.94 34.17 33.90 9.91 9.65 0.25 0.51 0.25 0.227 0.230 0.006 0.873 0.865 0.404 0.405 0.070 0.830 0.670 0.129 0.112 1.345 0.390 1.100 0.010 0.020 0.010 0.435 0.197 0.220 0.004 0.845 0.855 0.396 0.396 0.060 0.770 0.650 0.119 0.102 1.335 0.380 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-03-29 SOT262A1 2003 Sep 19 EUROPEAN PROJECTION 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 19 22 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/04/pp23 Date of release: 2003 Sep 19 Document order number: 9397 750 11599