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BLS6G2731-6G,112

BLS6G2731-6G,112

  • 厂商:

    AMPHENOL(安费诺)

  • 封装:

    SOT975C

  • 描述:

    RF FET LDMOS 60V 15DB SOT975C

  • 数据手册
  • 价格&库存
BLS6G2731-6G,112 数据手册
BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 2.7 to 3.1 32 6 15 33 20 10 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. You must use a ground strap or touch the PC case or other grounded source before unpacking or handling the hardware. 1.2 Features and benefits  Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 s and a  of 10 %:  Output power = 6 W  Power gain = 15 dB  Efficiency = 33 %  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (2.7 GHz to 3.1 GHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications  S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range BLS6G2731-6G LDMOS S-Band radar power transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 2 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version eared flanged ceramic package; 2 mounting holes; 2 leads BLS6G2731-6G - SOT975C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 60 V VGS gate-source voltage 0.5 +13 V ID drain current - 3.5 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics BLS6G2731-6G#3 Product data sheet Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL = 6 W All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 Typ Unit tp = 100 s;  = 10 % 1.56 K/W tp = 200 s;  = 10 % 1.95 K/W tp = 300 s;  = 10 % 2.20 K/W tp = 100 s;  = 20 % 2.00 K/W © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 12 BLS6G2731-6G LDMOS S-Band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.18 mA 60 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 18 mA 1.4 1.8 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 2.7 - - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 0.9 A 0.81 - - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 0.63 A 328 - 1260 m 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 100 s;  = 10 %; RF performance at VDS = 32 V; IDq = 25 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production circuit. BLS6G2731-6G#3 Product data sheet Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage PL = 6 W - - 32 V Gp power gain PL = 6 W 14 15 - dB D drain efficiency PL = 6 W 30 33 - % tr rise time PL = 6 W - 20 50 ns tf fall time PL = 6 W - 10 50 ns All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 12 BLS6G2731-6G LDMOS S-Band radar power transistor Table 8. f Typical impedance ZS ZL GHz   2.7 2.44  j17.78 3.30  j4.14 2.8 2.99  j16.04 4.52  j3.72 2.9 3.94  j14.56 5.67  j4.67 3.0 5.44  j13.75 4.94  j6.39 3.1 6.89  j14.58 3.00  j6.56 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G2731-6G is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 25 mA; PL = 6 W; tp = 100 s;  = 10 %. BLS6G2731-6G#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 12 BLS6G2731-6G LDMOS S-Band radar power transistor 7.2 Graphs 001aaj447 18 Gp (dB) 001aaj448 18 Gp (dB) (2) (1) 16 16 (2) 14 14 (3) (3) 12 12 0 6 12 18 0 6 12 PL (W) VDS = 32 V; IDq = 25 mA; tp = 300 s;  = 10 %. VDS = 32 V; IDq = 25 mA; tp = 100 s;  = 20 %. (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Power gain as a function of load power; typical values 001aaj449 70 ηD (%) 60 18 PL (W) (1) f = 2.7 GHz Fig 2. (1) (1) Fig 3. Power gain as a function of load power; typical values 001aaj450 70 ηD (%) 60 (1) (2) (2) 50 50 (3) (3) 40 40 30 30 20 20 10 10 0 0 0 6 12 18 0 PL (W) VDS = 32 V; IDq = 25 mA; tp = 300 s;  = 10 %. (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Drain efficiency as a function of load power; typical values Product data sheet 18 VDS = 32 V; IDq = 25 mA; tp = 100 s;  = 20 %. (1) f = 2.7 GHz BLS6G2731-6G#3 12 PL (W) (1) f = 2.7 GHz Fig 4. 6 Fig 5. Drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 12 BLS6G2731-6G LDMOS S-Band radar power transistor 001aaj451 20 PL (W) PL (W) (1) (2) 16 12 001aaj452 20 (1) 16 (2) 12 (3) 8 8 4 4 0 (3) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Pi (W) 0 VDS = 32 V; IDq = 25 mA; tp = 300 s;  = 10 %. 0.1 (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Load power as a function of input power; typical values 001aaj453 18 Fig 7. 0.4 0.5 0.6 0.7 Pi (W) ηD (%) Load power as a function of input power; typical values 001aaj454 18 50 Gp Gp (dB) 0.3 VDS = 32 V; IDq = 25 mA; tp = 100 s;  = 20 %. (1) f = 2.7 GHz Fig 6. 0.2 50 Gp Gp (dB) ηD (%) ηD ηD 16 40 16 40 14 30 14 30 12 2650 2750 2850 2950 20 3050 3150 f (MHz) 12 2650 VDS = 32 V; IDq = 25 mA; tp = 300 s;  = 10 %. Fig 8. Power gain and drain efficiency as function of frequency; typical values BLS6G2731-6G#3 Product data sheet 2750 2850 2950 20 3050 3150 f (MHz) VDS = 32 V; IDq = 25 mA; tp = 100 s;  = 20 %. Fig 9. Power gain and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 12 BLS6G2731-6G LDMOS S-Band radar power transistor 8. Test information C7 C1 C2 C3 C4 R1 C8 C5 C9 R2 C10 L3 C6 C11 L2 L1 001aaj455 Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with r = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit Table 9. List of components (see Figure 10) Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with r = 6.15 and thickness = 0.64 mm. Component Description C1 multilayer ceramic chip capacitor 20 nF Value ATC 200B or equivalent C2, C9 multilayer ceramic chip capacitor 100 pF ATC 100B or equivalent C3 multilayer ceramic chip capacitor 10 F; 35 V AVX TAJD106K035R or equivalent C4, C8 multilayer ceramic chip capacitor 1 nF ATC 700A or equivalent C5, C10, C11 multilayer ceramic chip capacitor 20 pF ATC 100A or equivalent C6 multilayer ceramic chip capacitor 2.7 pF ATC 100A or equivalent C7 electrolytic capacitor 47 F; 63 V R1 SMD resistor 56  R2 SMD resistor 3.9  L1, L2, L3 copper (Cu) strips - BLS6G2731-6G#3 Product data sheet Remarks All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 12 BLS6G2731-6G LDMOS S-Band radar power transistor 9. Package outline Earless flanged ceramic package; 2 leads SOT975C Z4 Z6 Z3 Z5 D A Z1 F U1 D1 A H1 Z2 minimal dimensions for solder pattern c 1 L Lp E1 H U2 E 0 5 mm scale Z4 Z5 α Z6 7° 2 3.30 w1 b 1.14 1.52 0° α A 7° 0.130 0.045 0.060 Q 0° Dimensions (mm dimensions are derived from the original inch dimensions) Unit mm A max 3.15 nom min 2.59 F H H1 b c D D1 E E1 3.38 0.23 6.55 6.93 6.55 6.93 0.23 10.29 7.49 3.23 0.18 6.40 6.78 6.40 6.78 0.18 10.03 6.73 L Lp Q U1 U2 1.02 +0.05 6.43 6.43 0.51 6.27 1.65 -0.05 6.27 w1 Z1 Z2 Z3 0.51 6.35 6.35 1.02 0.040 +0.002 0.253 0.253 max 0.124 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.405 0.295 0.065 0.020 0.250 0.250 0.040 inches nom 0.020 -0.002 0.247 0.247 min 0.102 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.395 0.265 sot975c_po Outline version References IEC JEDEC JEITA European projection Issue date 08-07-10 14-10-13 SOT975C Fig 11. Package outline SOT975C BLS6G2731-6G#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 12 BLS6G2731-6G LDMOS S-Band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor RF Radio Frequency S-Band Short wave Band SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLS6G2731-6G#3 20150901 Product data sheet Modifications: Change notice Supersedes BLS6G2731-6G v.2 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLS6G2731-6G v.2 20141216 Product data sheet - BLS6G2731-6G v.1 BLS6G2731-6G v.1 20090219 Product data sheet - - BLS6G2731-6G#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 12 BLS6G2731-6G LDMOS S-Band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLS6G2731-6G#3 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 12 BLS6G2731-6G LDMOS S-Band radar power transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLS6G2731-6G#3 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 12 BLS6G2731-6G LDMOS S-Band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLS6G2731-6G#3
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