AO4290A
100V Channel AlphaSGT TM
General Description
Product Summary
VDS
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Logic Driven
• RoHS and Halogen-Free Compliant
Applications
ID (at VGS=10V)
100V
15.5A
RDS(ON) (at VGS=10V)
< 6.4mΩ
RDS(ON) (at VGS=4.5V)
< 7.6mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification for Quick Charger 3.0
• Synchronous Rectification for AC/DC adapter and
DC/DC brick power
SOIC-8
Top View
D
D
D
Top View
Bottom View
D
D
G
1
8
2
7
3
6
4
5
G
PIN1
S
S
S
S
PIN1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4290A
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TA=25°C
Power Dissipation B
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: July 2016
Steady-State
Steady-State
A
IAS
44
A
EAS
97
mJ
VSPIKE
120
V
3.1
W
2.0
TJ, TSTG
Symbol
t ≤ 10s
V
62
PD
TA=70°C
±20
12
IDM
Avalanche Current C
Units
V
15.5
ID
TA=70°C
Maximum
100
RθJA
RθJL
-55 to 150
Typ
31
59
16
www.aosmd.com
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4290A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
1.3
±100
nA
1.75
2.3
V
5.3
6.4
9.5
11.5
7.6
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=13.5A
6.1
gFS
Forward Transconductance
VDS=5V, ID=15.5A
90
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
0.68
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=15.5A
Coss
Units
V
VDS=100V, VGS=0V
IDSS
Max
mΩ
S
1
V
4
A
4525
pF
345
pF
22.5
pF
1.1
1.8
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
65
95
nC
Qg(4.5V)
Total Gate Charge
30
45
nC
Qgs
Gate Source Charge
Qgd
VGS=10V, VDS=50V, ID=15.5A
0.5
mΩ
10
nC
Gate Drain Charge
9
nC
tD(on)
Turn-On DelayTime
10
ns
6
ns
52
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=50V, RL=3.25Ω,
RGEN=3Ω
10
ns
IF=15.5A, di/dt=500A/µs
32
Body Diode Reverse Recovery Charge IF=15.5A, di/dt=500A/µs
162
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PDM
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: July 2016
www.aosmd.com
Page 4 of 5
AO4290A
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: July 2016
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 5 of 5
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