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ASDL-4560

ASDL-4560

  • 厂商:

    AVAGO(博通)

  • 封装:

  • 描述:

    ASDL-4560 - High Performance Infrared Emitter (875nm) ChipLED - AVAGO TECHNOLOGIES LIMITED

  • 数据手册
  • 价格&库存
ASDL-4560 数据手册
ASDL-4560 High Performance Infrared Emitter (875nm) ChipLED Data Sheet Description ASDL-4560 Infrared emitter is a 0805 ChipLED SMT package that is designed for high radiant intensity, fast switching and low forward voltage applications. It is optimized for efficiency at emission wavelength of 875nm and encapsulated with a flat lens for wide viewing angle applications. Features • 875nm wavelength • Industry Standard Footprint: 0805 ChipLED SMT Package • Top Emitting • High Brightness • Low Forward Voltage • High Pulse Rate • High Speed • Wide Viewing Angle • Lead Free and ROHS Compliant • Tape & Reel for automation placement Applications • High-Speed Machine Automated System • Remote Control • Smoke Detector • Medical Applications • Non-Contact Position Sensing • Optical Encoders Ordering Information Part Number ASDL-4650-C22 Packaging Tape & Reel Shipping Option 12Kpcs Package Outline All Dimensions are in Millimeters Tape and Reel Dimension All Dimensions are in Millimeters (Inches) 2 Absolute Maximum Ratings at 25°C Parameter Peak Forward Current Symbol IFPK Min. Max 25 Unit mA Reference Tp=500ns Tw= 100ns Duty Cycle=20% Figure 5 Ir=10uA Continuous Forward Current Power Dissipation Reverse Voltage Operating Temperature LED Junction Temperature Lead Soldering Temperature IFDC PDISS Vr TO TJ 4 -40 100 10 85 110 260 for 5 sec mA mW V °C °C °C Electrical Characteristics at 25°C Parameter Forward Voltage Reverse Voltage Thermal Resistance Junction to Ambient Diode Capacitance CO Symbol VF Vr 4 80 50 Min. Typ. 1.4 1.45 Max. 1.75 2.0 Unit V V V °C/W pF Vr=0V, f=1MHz Condition IF =20mA IF =50mA IR=10uA Optical Characteristics at 25°C Parameter Radiant On-Axis Intensity Viewing Angle Peak wavelength Spectral Width Optical Rise Time Symbol IE 2θ1/2 λPK Δλ tr Min. 2.0 Typ. 2.8 150 875 45 15 Max. Unit mW/Sr deg nm nm ns IF = 50mA IF = 50mA IFPK=500mA Duty Factor=20% Pulse Width=100ns IFPK=500mA Duty Factor=20% Pulse Width=100ns Condition IF = 50mA Optical Fall Time tf 10 ns  Typical Electrical / Optical Characteristics Curve (TA = 25°C Unless Otherwise Stated) 1.2 RELATIVE RADIANT INTENSITY 1.0 0.8 0.6 0.4 0.2 0 700 0.12 0.10 0.08 0.06 0.04 0.02 0.00 800 900 PEAK WAVELENGTH - nm 1000 0 0.5 1 1.5 VF FORWARD VOLTAGE - V 2 Figure 1. Peak Wavelength Vs Relative Radiant Intensity Figure 2. Forward Current Vs Forward Voltage IF FORWARD CURRENT - A 6 5 4 3 2 1 0 0 20 40 60 80 100 120 FORWARD CURRENT - mA 1 0.8 0.6 0.4 0.2 0 Ie - RELATIVE RADIANT INTENSITY -0.8 RADIANT INTENSITY - mW/Sr -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 Figure 3. Forward Current Vs Radiant Intensity Figure 4. Angular Displacement Vs Relative Radiant Intensity 105 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 I FDC MAX - MAXIMUM DC CURRENT PER SEGMENT - mA 0 20 40 60 T A - AMBIENT TEMPERATURE - C o 80 100 Figure 5. Forward Current versus Ambient Temperature derated based on Tj – 110 °C and thermal resistance at 380 °C/W 4 Recommended Reflow Profile 255 T - TEMPERATURE (°C) MAX 260C R3 R4 230 217 200 180 150 120 80 25 0 50 R1 R2 60 sec to 90 sec Above 217 C R5 P1 HEAT UP 100 P2 SOLDER PASTE DRY 150 200 P3 SOLDER REFLOW 250 P4 COOL DOWN 300 t-TIME (SECONDS) Process Zone Heat Up Solder Paste Dry Solder Reflow Cool Down Time maintained above liquidus point , 217°C Peak Temperature Time within 5°C of actual Peak Temperature Time 25°C to Peak Temperature Symbol P1, R1 P2, R2 P, R P, R4 P4, R5 DT 25°C to 150°C 150°C to 200°C 200°C to 260°C 260°C to 200°C 200°C to 25°C > 217°C 260°C 25°C to 260°C Maximum DT/Dtime or Duration °C/s 100s to 180s °C/s -6°C/s -6°C/s 60s to 90s 20s to 40s 8mins The reflow profile is a straight-line representation of a nominal temperature profile for a convective reflow solder process. The temperature profile is divided into four process zones, each with different DT/Dtime temperature change rates or duration. The DT/Dtime rates or duration are detailed in the above table. The temperatures are measured at the component to printed circuit board connections. In process zone P1, the PC board and component pins are heated to a temperature of 150°C to activate the flux in the solder paste. The temperature ramp up rate, R1, is limited to 3°C per second to allow for even heating of both the PC board and component pins. Process zone P2 should be of sufficient time duration (100 to 180 seconds) to dry the solder paste. The temperature is raised to a level just below the liquidus point of the solder. Process zone P3 is the solder reflow zone. In zone P3, the temperature is quickly raised above the liquidus point of solder to 260°C (500°F) for optimum results. The dwell time above the liquidus point of solder should be between 60 and 90 seconds. This is to assure proper coalescing of the solder paste into liquid solder and the formation of good solder connections. Beyond the recommended dwell time the intermetallic growth within the solder connections becomes excessive, resulting in the formation of weak and unreliable connections. The temperature is then rapidly reduced to a point below the solidus temperature of the solder to allow the solder within the connections to freeze solid. Process zone P4 is the cool down after solder freeze. The cool down rate, R5, from the liquidus point of the solder to 25°C (77°F) should not exceed 6°C per second maximum. This limitation is necessary to allow the PC board and component pins to change dimensions evenly, putting minimal stresses on the component. It is recommended to perform reflow soldering no more than twice. 5 Recommended Land Pattern All Dimensions are in Millimeters (Inches) For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved. AV02-0275EN - August 24, 2007
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