BCP56TA

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCP56 ISSUE 3 – AUGUST 1995 ✪ FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE – BCP53 PARTMARKING DETAILS – BCP56 BCP56 – 10 C E C B BCP56 – 16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO VALUE 100 UNIT V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V 1.5 A Peak Pulse Current ICM Continuous Collector Current IC 1 A Power Dissipation at Tamb =25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 100 TYP. MAX. V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 80 V IC= 10mA * Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µ A Collector Cut-Off Current ICBO 100 20 µA nA VCB=30V VCB=30V, Tamb=150°C Emitter Cut-Off Current IEBO 10 µA VEB=5V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=500mA, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=500mA, VCE=2V* Static Forward Current hFE Transfer Ratio BCP56-10 BCP56-16 Transition Frequency fT 40 25 63 100 250 100 160 125 IC=150mA, IC=500mA, IC=150mA, IC=150mA, 160 250 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 18 VCE=2V* VCE=2V* VCE=2V* VCE=2V* IC=50mA, VCE=10V, f=100MHz