DMB53D0UV-7

DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data               N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected MOSFET Gate up to 2kV Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q101) for High Reliability. https://www.diodes.com/quality/product-definitions/ Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate)     D2 SOT563 B E Q1 Q2 S2 C Top View Internal Schematic Bottom View Top View ESD PROTECTED TO 2kV G2 Ordering Information (Note 3) Part Number DMB53D0UV-7 DMB53D0UV-13 Notes: Case SOT563 SOT563 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information MB1 YM Date Code Key Year Code 2008 V Month Code Jan 1 2009 W Feb 2 DMB53D0UV Document number: DS31651 Rev. 8 - 2 2010 X Mar 3 2011 Y Apr 4 May 5 MB1 = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2012 Z Jun 6 1 of 7 www.diodes.com 2013 A Jul 7 2014 B Aug 8 2015 C Sep 9 2016 D Oct O 2017 E Nov N Dec D October 2019 © Diodes Incorporated DMB53D0UV Maximum Ratings – MOSFET, Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) Pulsed Drain Current (Note 4) Symbol VDSS VGSS ID IDM Continuous Value 50 12 160 560 Units V V mA mA Maximum Ratings - NPN Transistor, Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Value 50 45 6.0 100 Unit V V V mA Value 250 500 -55 to +150 Unit mW C/W C Thermal Characteristics, Total Device (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Electrical Characteristics - MOSFET (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS 50     10 V A IGSS   1.0 A ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) 0.7   0.8 3.1 4 1.0 4 5 Gate-Body Leakage 5.0 V  Forward Transconductance gFS 180   ms DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss    25 5 2.1    pF pF pF Notes: Test Condition VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 8V, VDS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = 250A VGS = 4V, ID = 100mA VGS = 2.5V, ID = 80mA VDS = 10V, ID = 100mA, f = 1.0KHz VDS = 10V, VGS = 0V, f = 1.0MHz 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. DMB53D0UV Document number: DS31651 Rev. 8 - 2 2 of 7 www.diodes.com October 2019 © Diodes Incorporated DMB53D0UV Electrical Characteristics - NPN Transistor (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain (Note 5) (Note 5) (Note 5) (Note 5) Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE Min 50 45 6 200 Typ — — — 290 Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — — Base-Emitter Saturation Voltage (Note 5) VBE(SAT) — Base-Emitter Voltage (Note 5) VBE 580 — 700 900 660 — Collector-Cutoff Current (Note 5) — — Collector-Emitter Cut-Off Current (Note 5) ICBO ICBO ICES — — 700 770 15 5.0 100 fT 100 — — MHz COBO — — 4.5 pF NF — — 10 dB Gain Bandwidth Product Output Capacitance Noise Figure Max — — — 450 100 300 Unit V V V — — mV mV mV nA µA nA Test Condition IC = 10A, IB = 0 IC = 10mA, IB = 0 IE = 1A, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = +150°C VCE = 45V VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, RS = 2.0k f = 1.0kHz, BW= 200Hz MOSFET 0.8 0.5 VGS = 10V 0.7 VDS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.4 VGS = 4.5V 0.6 0.5 VGS = 3.0V 0.4 VGS = 2.5V 0.3 0.2 = 85癈 TA =TA85° C 25癈 TTAA==25° C T TAA = -55癈 -55°C 0.3 TTAA==150癈 150°C TTAA==125癈 125°C 0.2 0.1 0.1 VGS = 1.5V VGS = 1.0V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 0 5 10 VGS = 2.5V VGS = 4.0V 0.01 0.1 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage DMB53D0UV Document number: DS31651 Rev. 8 - 2 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 4 Fig. 2 Typical Transfer Characteristics 10 1 0.001 1 2 3 VGS, GATE SOURCE VOLTAGE (V) 3 of 7 www.diodes.com TAT=A150° C = 150癈 T 125癈C TAA == 125° 85°C TTAA = 85癈 TTAA = = 25癈 25°C TAA== -55° -55癈 T C 1 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature October 2019 © Diodes Incorporated DMB53D0UV 2.0 35 30 VGS = 4V ID = 100mA 1.6 1.4 C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 VGS = 2.5V ID = 80mA 1.2 1.0 0.8 25 20 f = 1MHz VGS = 0V 15 10 5 0.6 0.4 -50 0 1.1 1 -25 0 25 50 75 100 125 150 (°C)) TJ, JUNCTION TEMPERATURE (癈 Fig. 5 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) Ciss Coss Crss 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 40 0.9 IS, SOURCE CURRENT (A) 1.0 ID = 250礎 ID=250A 0.8 0.7 0.1 TA T =A150° C = 150癈 125癈 TTAA==125° C 0.01 85癈 TTAA==85° C 0.001 25°C TTAA== 25癈 TT A ==-55癈 -55°C A 0.6 0.5 -50 -25 0 25 50 75 100 125 150 (°C)) TA, AMBIENT TEMPERATURE (癈 Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.0001 0.1 0.3 0.5 0.7 0.9 1.1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 RJA = 500C/W 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9 Derating Curve - Total Package Power Dissipation DMB53D0UV Document number: DS31651 Rev. 8 - 2 4 of 7 www.diodes.com October 2019 © Diodes Incorporated DMB53D0UV NPN Transistor 1,000 0.4 TA = 150°C IC IB = 20 100 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN TA = 25°C TA = -50°C 10 1 100 1,000 10 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical DC Current Gain vs. Collector Current 1 0.3 0.2 25癈 TTAA==25° C TAT= =150° C 150癈 A 0.1 -50°C TTAA== -50癈 0 0.1 1,000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 11 Typical Collector-Emitter Saturation Voltage vs. Collector Current fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 VCE = 5V 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Gain-Bandwidth Product vs. Collector Current DMB53D0UV Document number: DS31651 Rev. 8 - 2 100 5 of 7 www.diodes.com October 2019 © Diodes Incorporated DMB53D0UV Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMB53D0UV Document number: DS31651 Rev. 8 - 2 6 of 7 www.diodes.com October 2019 © Diodes Incorporated DMB53D0UV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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