NOT RECOMMENDED FOR NEW DESIGN
NO ALTERNATE PRODUCT
DMG4812SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
V(BR)DSS
Features
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ID max
RDS(on)
TA = +25°C
15mΩ @ VGS= 10V
10.7A
18.5mΩ @ VGS= 4.5V
9.6A
30V
DIOFET Utilizes a Unique Patented Process to Monolithically
Integrate a MOSFET and a Schottky in a Single Die to Deliver:
Low RDS(ON)—Minimizes Conduction Losses
Low VSD—Reduces Losses due to Body Diode Conduction
Low Qrr—Lower Qrr of the Integrated Schottky Reduces
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) yet maintain superior switching performance,
Body Diode Switching Losses
Low Gate Capacitance (Qg/Qgs) Ratio—Reduces Risk of
SHOOT-THROUGH or Cross Conduction Currents at High
Frequencies
Avalanche Rugged—IAR and EAR Rated
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
making it ideal for high-efficiency power management applications.
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Applications
Mechanical Data
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DC-DC Converters
Power Management Functions
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
D
S
D
S
D
S
D
G
ESD PROTECTED
D
Top View
Internal Schematic
Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMG4812SSS-13
Notes:
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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