DMN2027LK3-13

A Product Line of Diodes Incorporated DISCONTINUED DMN2027LK3 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V Features and Benefits ID RDS(on) TA = 25°C 21mΩ @ VGS= 10V 17.0A 27mΩ @ VGS= 4.5V 15.0A 40mΩ @ VGS= 2.5V 12.3A • Low on-resistance • Fast switching speed • Low gate drive • “Green” component and RoHS compliant (Note 1) Mechanical Data Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case: TO252-3L • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Backlighting • Marking Information: See Below • DC-DC Converters • Ordering Information: See Below • Power management functions • Weight: 0.33 grams (approximate) D D G D G TOP VIEW Ordering Information Note: S S Equivalent Circuit PIN OUT -TOP VIEW (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN2027LK3-13 N2027L 13 16 2,500 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information YYWW N2027L DMN2027LK3 Document Revision: 1 = Manufacturer’s Marking N2027L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com May 2013 © Diodes Incorporated DISCONTINUED A Product Line of Diodes Incorporated DMN2027LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS = 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value 20 ±12 17.0 13.6 11.6 46.8 11.9 46.8 Unit V V Value 4.18 33.44 8.9 71.4 2.14 17.1 29.9 14.0 58.4 2.46 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 2) Power dissipation Linear derating factor (Note 3) PD (Note 5) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 2) (Note 3) (Note 5) (Note 6) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN2027LK3 Document Revision: 1 2 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN2027LK3 Thermal Characteristics 100 RDS(on) Limit ID Drain Current (A) ID Drain Current (A) 100 10 DC 1 1s 100ms 10ms Tamb=25°C 25mm x 25mm 100m 1oz FR4 100µs 1 10 DC 1s 1 10 35 40 D=0.5 20 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) Thermal Resistance (°C/W) Tamb=25°C 25mm x 25mm 1oz FR4 Single Pulse Tamb=25°C 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) Tamb=25°C 50mm x 50mm 2oz FR4 30 25 20 D=0.5 15 D=0.1 10 D=0.2 5 0 100µ 1m D=0.05 Single Pulse 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance 1k Max Power Dissipation (W) Max Power Dissipation (W) Transient Thermal Impedance 4 50mm x 50mm 2oz FR4 3 25mm x 25mm 1oz FR4 2 1 0 0 Pulse Power Dissipation Document Revision: 1 10 Safe Operating Area 60 DMN2027LK3 1 VDS Drain-Source Voltage (V) Safe Operating Area 30 10ms 1ms 100µs 100m VDS Drain-Source Voltage (V) 50 100ms Tamb=25°C 50mm x 50mm 100m 2oz FR4 1ms 100m RDS(on) Limit 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN2027LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 20   V Zero Gate Voltage Drain Current IDSS   0.5 µA VDS= 20V, VGS= 0V Gate-Source Leakage IGSS   ±100 nA VGS= ±12V, VDS= 0V VGS(th) 0.6  2.0 V ID= 250µA, VDS= VGS • VGS= 4.5V, ID= 10A ID = 250µA, VGS= 0V ON CHARACTERISTICS Gate Threshold Voltage 0.021 Static Drain-Source On-Resistance (Note 7) RDS (ON)   0.027 VGS= 10V, ID= 20A 0.040 VGS= 2.5V, ID= 4A Forward Transconductance (Notes 7 & 8) gfs  31.7  S VDS= 15V, ID= 10A Diode Forward Voltage (Note 7) VSD  0.89 1.0 V IS= 10A, VGS= 0V Reverse recovery time (Note 8) trr 121  ns Reverse recovery charge (Note 8) Qrr 583  nC  IS= 10A, di/dt= 100A/µs DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss  857  pF Output Capacitance Coss  177  pF Reverse Transfer Capacitance Crss  102  pF Total Gate Charge Qg  5.2  nC Total Gate Charge Qg  9.1  nC Gate-Source Charge Qgs  1.9  nC Gate-Drain Charge Qgd  3.2  nC Turn-On Delay Time (Note 9) tD(on)  5.4  ns Turn-On Rise Time (Note 9) tr  22.3  ns tD(off)  18.7  ns tf  12.6  ns Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Notes: VDS= 10V, VGS= 0V f= 1MHz VGS= 2.5V, ID= 4A VGS= 4.5V ID= 10A VDS= 10V VDD= 10V, VGS= 10V ID= 10A, RG ≅ 6.0Ω 7. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. DMN2027LK3 Document Revision: 1 4 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN2027LK3 Typical Characteristics ID Drain Current (A) 3V T = 150°C 2.5V 10 2V 1 1.5V 0.1 VGS 0.01 0.1 1 0.1 Normalised RDS(on) and VGS(th) T = 150°C 0.1 T = 25°C 0.01 1 2 Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance (Ω) 0.1 1 10 Output Characteristics 10 VGS 1.5V 2V 1 T = 25°C 2.5V 0.1 3V 4.5V 10V 1 10 ID Drain Current (A) On-Resistance v Drain Current VGS = 10V ID = 20A 1.4 RDS(on) 1.2 1.0 0.8 0.4 -50 VGS(th) VGS = VDS ID = 250uA 0.6 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) ID Drain Current (A) 1 VGS Gate-Source Voltage (V) Document Revision: 1 VGS 1.6 VDS = 10V 1E-3 DMN2027LK3 1V VDS Drain-Source Voltage (V) Output Characteristics 0.01 0.1 2V 1.5V VDS Drain-Source Voltage (V) 10 2.5V 1 0.01 10 10V 10 ID Drain Current (A) 10V T = 25°C 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com 1.0 May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN2027LK3 Typical Characteristics - continued VGS = 0V f = 1MHz C Capacitance (pF) 1000 800 CISS COSS 600 CRSS 400 200 0 0.1 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 1200 4 3 2 VDS = 10V ID = 10A 1 0 0 2 4 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN2027LK3 Document Revision: 1 Switching time test circuit 6 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DISCONTINUED DMN2027LK3 Package Outline Dimensions DIM Inches Millimeters DIM Inches Min Millimeters Min Max Min Max Max Min A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC 0.090 BSC Max 2.29 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 D1 0.205 - 5.21 - • 1° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 •° 0° 15° 0° 15° E1 0.170 - 4.32 - - - - - - DMN2027LK3 Document Revision: 1 7 of 8 www.diodes.com May 2013 © Diodes Incorporated DISCONTINUED A Product Line of Diodes Incorporated DMN2027LK3 Suggested Pad Layout IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com DMN2027LK3 Document Revision: 1 8 of 8 www.diodes.com May 2013 © Diodes Incorporated