DMN26D0UDJ-7

DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V(BR)DSS RDS(on) 20V 3.0Ω @ VGS= 4.5V 6.0Ω @ VGS= 1.8V   ID TA = +25°C 240mA 180mA Description        This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications   DC-DC Converters Power Management Functions Dual N-Channel MOSFET Low On-Resistance:  3.0Ω@ 4.5V  4.0Ω@ 2.5V  6.0Ω@1.8V  10Ω@1.5V Very Low Gate Threshold Voltage, 1.05V Max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package ESD Protected Gate (HBM 300V) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data       Case: SOT963 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (Approximate) D1 G2 S2 S1 G1 D2 SOT963 ESD PROTECTED Top View Top View Schematic and Transistor Diagram Ordering Information (Note 4) Part Number DMN26D0UDJ-7 Notes: Case SOT963 Packaging 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain