DMN26D0UT-7

DMN26D0UT N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Lead, Halogen, and Antimony Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.002 grams (approximate) • • • • • • Drain D Gate Gate Protection Diode ESD PROTECTED Maximum Ratings EQUIVALENT CIRCUIT TOP VIEW S TOP VIEW @TA = 25°C unless otherwise specified Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current Thermal Characteristics TP = 10µs Symbol VDSS VGSS ID IDM Value 20 ±10 230 805 Unit V V mA mA 300 417 -55 to +150 mW °C/W °C @TA = 25°C unless otherwise specified Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: G Source PD RθJA TJ, TSTG 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN26D0UT Document number: DS31854 Rev. 2 - 2 1 of 6 www.diodes.com September 2009 © Diodes Incorporated DMN26D0UT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Min Typ Max Unit Test Condition BVDSS IDSS 20 ⎯ ⎯ ⎯ ⎯ 500 V nA IGSS ⎯ ⎯ ±1 ±500 ±100 μA nA nA VGS(th) 0.5 ⎯ 1.0 V RDS (ON) ⎯ ⎯ ⎯ 3.0 4.0 6.0 10.0 15.0 Ω ⎯ ⎯ 1.8 2.4 2.9 3.7 5.4 |Yfs| VSD ⎯ 0.5 242 ⎯ ⎯ 1.0 mS V Ciss Coss Crss ⎯ ⎯ ⎯ 14.1 2.9 1.6 ⎯ ⎯ ⎯ pF pF pF VDS = 15V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ 3.8 7.9 13.4 15.2 ⎯ ⎯ ⎯ ⎯ ns VGS = 4.5V, VDD = 10V ID = 200mA, RG = 2.0Ω VGS = 0V, ID = 100μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS = ±8V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 100mA VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 20mA VGS = 1.5V, ID = 10mA VGS = 1.2V, ID = 1mA VDS =10V, ID = 0.1A VGS = 0V, IS = 115mA 4. Short duration pulse test used to minimize self-heating effect. 5. Switching characteristics are independent of operating junction temperature. 0.4 0.8 0.7 VGS = 8V VDS = 10V VGS = 4.5V 0.6 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Gate-Body Leakage Symbol VGS = 3.0V 0.5 0.4 VGS = 2.5V 0.3 VGS = 2.0V 0.2 0.1 0 0 0.3 TA = -55°C TA = 25°C TA = 85°C TA = 125°C 0.2 TA = 150°C 0.1 VGS = 1.5V 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN26D0UT Document number: DS31854 Rev. 2 - 2 3 2 of 6 www.diodes.com 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 September 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 5 4 3 VGS = 1.8V 2 VGS = 2.5V VGS = 4.5V 1 0.01 0.1 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 2.0 VGS = 4.5V 3 TA = 150°C 2 TA = 125°C T A = 85°C TA = 25°C 1 TA = -55°C 0 0.01 0.1 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1 3.5 1.6 VGS = 4.5V ID = 500mA RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 4 4.0 1.8 1.4 VGS = 2.5V ID = 150mA 1.2 1.0 0.8 3.0 2.5 VGS = 2.5V ID = 150mA 2.0 1.5 VGS = 4.5V ID = 500mA 1.0 0.6 0.4 -50 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 1.4 0.8 1.2 0.7 1.0 ID = 1mA 0.8 0.6 ID = 250µA 0.4 0.2 Document number: DS31854 Rev. 2 - 2 0.6 TA = 25°C 0.5 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN26D0UT -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMN26D0UT 3 of 6 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current September 2009 © Diodes Incorporated DMN26D0UT 10,000 20 IDSS, LEAKAGE CURRENT (nA) f = 1MHz NEW PRODUCT C, CAPACITANCE (pF) 15 Ciss 10 5 1,000 TA = 150°C TA = 125°C 100 TA = 85°C 10 1 TA = 25°C Coss TA = -55°C Crss 0 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0.1 0 20 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA R θJA = 278°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.000001 0.00001 Ordering Information 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 10 100 1,000 (Note 6) Part Number DMN26D0UT-7 Notes: t1 Case SOT-523 Packaging 3,000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information M1 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMN26D0UT Document number: DS31854 Rev. 2 - 2 Mar 3 M1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) YM 2011 Y Apr 4 May 5 2012 Z Jun 6 4 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D September 2009 © Diodes Incorporated DMN26D0UT Package Outline Dimensions A SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm B C G NEW PRODUCT H K M N J L D Suggested Pad Layout Y Z C X DMN26D0UT Document number: DS31854 Rev. 2 - 2 Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E 5 of 6 www.diodes.com September 2009 © Diodes Incorporated DMN26D0UT IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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