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DMT3011LDT-7

DMT3011LDT-7

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    V-DFN3030-8

  • 描述:

    MOSFET 2N-CH 30V 8A V-DFN3030-8

  • 数据手册
  • 价格&库存
DMT3011LDT-7 数据手册
DMT3011LDT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET INFORMATION ADVANCED NEW PRODUCT Product Summary Device V(BR)DSS Q1 30V Q2 30V Features RDS(ON) Max ID Max TA = +25°C   0.6mm Profile – Ideal for Low Profile Applications 2 PCB Footprint of 4mm 20mΩ @ VGS = 10V 8A    Low Gate Threshold Voltage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) 32mΩ @ VGS = 4.5V 6.3A 11.1mΩ @ VGS = 10V 10.7A 13.8mΩ @ VGS = 4.5V 9.6A Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance,   Case: V-DFN3030-8 (Type K) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.02 grams (Approximate) making it ideal for high-efficiency power management applications.   Applications    Mobile Computing Point of Load V-DFN3030-8 (Type K) 5 S2 6 S2 7 S2 8 G2 S1/D2 D1 PIN 1 D1 PIN 1 Top View PIN 1 D1 D1 G1 2 1 3 Bottom View Internal Schematic 4 Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMT3011LDT-7 Notes: Case V-DFN3030-8 (Type K) Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain
DMT3011LDT-7 价格&库存

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