DMT3011LDT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
INFORMATION
ADVANCED
NEW PRODUCT
Product Summary
Device
V(BR)DSS
Q1
30V
Q2
30V
Features
RDS(ON) Max
ID Max
TA = +25°C
0.6mm Profile – Ideal for Low Profile Applications
2
PCB Footprint of 4mm
20mΩ @ VGS = 10V
8A
Low Gate Threshold Voltage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
32mΩ @ VGS = 4.5V
6.3A
11.1mΩ @ VGS = 10V
10.7A
13.8mΩ @ VGS = 4.5V
9.6A
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
Case: V-DFN3030-8 (Type K)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.02 grams (Approximate)
making it ideal for high-efficiency power management applications.
Applications
Mobile Computing
Point of Load
V-DFN3030-8 (Type K)
5
S2
6
S2
7
S2
8
G2
S1/D2
D1
PIN 1
D1
PIN 1
Top View
PIN 1
D1
D1
G1
2
1
3
Bottom View
Internal Schematic
4
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMT3011LDT-7
Notes:
Case
V-DFN3030-8 (Type K)
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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