DMTH10H009SPS
Green
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
BVDSS
RDS(ON) Max
ID
TC = +25°C
100V
8.9mΩ @ VGS = 10V
88A
Rated to +175C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
Description
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and load switch.
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
®
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