FMMTA14TC

PART OBSOLETE - USE MMBTA13 / MMBTA14 FMMTA12 FMMTA13 FMMTA14 OBSOLETE – PART DISCONTINUED SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - FMMTA12 - NONE FMMTA13 - FMMTA63 FMMTA14 - FMMTA64 PARTMARKING DETAILS - E C B FMMTA12 - 3W FMMTA13 - 1M FMMTA14 - 1N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA12 Collector-Base Voltage VCBO Col l ector-Emitter Voltage VCEO Col l ector-Emitter Voltage VCES Emitter-Base Voltage VEBO 10 V Continuous Col l ector Current IC 300 mA Pow er Dissipation at Tam =25 C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 C SYMBOL MIN. Col l ector-Emitter FMMTA12 Breakdown Voltage FMMTA13/14 V(BR)CES Col l e ctor Cut-Off Current FMMTA12 ICES Co ector Cut-Off Current FMMTA12 ICBO FMMTA13/14 Emitter Cut-Off Current IEBO Static Forw ard Current Transfer hFE FMMTA12 FMMTA13 Ratio FMMTA13 FMMTA14 FMMTA14 Collector-Emitter FMMTA12 Saturation Voltage FMMTA13/14 Base-Emitter On Voltage UNIT 40 V 40 V 40 V 20 ELECTRICAL CHARACTERISTICS {at Tamb = 25°C). PARAMETER FMMTA13/14 MAX. UNIT CONDITIONS. V V IC=100µA, IB=0* IC=100µA, IB=0* 100 nA VCB=15V, VBE=0 100 100 nA nA VCB=15V, IE=0 VCB=30V, IE=0 100 nA VEB=10V, IC=0 20 40 20K 5K IC=10mA, VCE=5V* IC=10mA, VCE=5V* 10K 10K 20K VCE(sat) 1.0 0.9 V V IC=100mA, VCE=5V* IC=10mA, VCE=5V* IC=100mA, VCE=5V* IC=10mA, IB=0.01mA IC=100mA, IB=0.1mA FMMTA12 VBE(on) FMMTA13/14 1.4 2.0 V V IC=10mA, VCE=5V* IC=100mA,VCE=5V* *Measured under pulsed conditions. Pulse width =300µs. Duty cycle ≤ 2%Spice parameter data i s avai l able upon request for these devices For typical graphs see FMMT38A datasheet