FZT953TA

FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps * Ptot = 3 watts * FZT951 exhibts extremely low equivalent on resistance; RCE(sat) 55m
at 4A COMPLEMENTARY TYPES - FZT951 = FZT851 FZT953 = FZT853 PARTMARKING DETAILS DEVICE TYPE IN FULL C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT951 FZT953 UNIT Collector-Base Voltage VCBO -100 -140 V Collector-Emitter Voltage VCEO -60 -100 V Emitter-Base Voltage VEBO Peak Pulse Current ICM Continuous Collector Current IC -5 A Power Dissipation at Tamb=25°C Ptot 3 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C -6 -15 V -10 A *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 279 FZT951 FZT951 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Collector-Base Breakdown Voltage V(BR)CBO -100 -140 Collector-Emitter Breakdown Voltage V(BR)CER V(BR)CEO -100 -60 -140 UNIT CONDITIONS. V IC=-100
A V -90 V IC=-1
A, RB1k IC=-10mA* IE=-100
A Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO -50 -1 nA
A VCB=-80V VCB=-80V, Tamb=100°C Collector Cut-Off Current ICER R 1k -50 -1 nA
A VCB=-80V VCB=-80V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -20 -85 -155 -370 -50 -140 -210 -460 mV mV mV mV IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-5A, IB=-500mA* -1080 -1240 mV IC=-5A, IB=-500mA* Base-Emitter Saturation Voltage -6 -8 V Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT -935 -1070 mV IC=-5A, VCE=-1V* 1.6 1.2 1.0 0.8 0.6 1.4 1.0 0.8 0.6 0.4 0.2 0.2 0.01 0.1 1 1.4 200 200 90 25 VCE=1V 300 200 0.8 0.6 100 0.4 -55°C +25°C +100°C +175°C 1.6 0.2 Output Capacitance Cobo 74 pF VCB=-10V, f=1MHz Switching Times ton toff 82 350 ns ns IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V * Measured under pulsed conditions. Pulse width =300
s. duty cycle  2% Spice parameter data is available upon request for this device 0.01 0.1 1.2 1.0 0.8 0.6 0.4 0 10 20 1 1.4 1 hFE v IC VBE(sat) v IC VCE=1V 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 10 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 281 10 20 Single Pulse Test at Tamb=25°C 0.1 3 - 280 0.1 IC - Collector Current (Amps) 1.2 0.001 0.01 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C 1.6 0 IC/IB=10 0.2 0.001 IC - Collector Current (Amps) IC=-100mA, VCE=-10V f=50MHz VBE - (Volts) MHz 10 20 1.4 100 120 1 VCE(sat) v IC 1.0 IC=-10mA, VCE=-1V* IC=-2A, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* 300 0.1 VCE(sat) v IC 0.001 100 100 75 10 0.01 IC - Collector Current (Amps) 1.2 0 0.001 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 0 10 20 IC/IB=10 1.2 0.4 0.001 -55°C +25°C +175°C Tamb=25°C IC/IB=10 1.4 0 VBE(sat) IC/IB=50 1.6 hFE - Normalised Gain Collector-Emitter Breakdown Voltage MAX. VCE(sat) - (Volts) TYP. hFE - Typical Gain MIN. VBE(sat) - (Volts) SYMBOL VCE(sat) - (Volts) PARAMETER 100 FZT951 FZT951 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Collector-Base Breakdown Voltage V(BR)CBO -100 -140 Collector-Emitter Breakdown Voltage V(BR)CER V(BR)CEO -100 -60 -140 UNIT CONDITIONS. V IC=-100
A V -90 V IC=-1
A, RB1k IC=-10mA* IE=-100
A Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO -50 -1 nA
A VCB=-80V VCB=-80V, Tamb=100°C Collector Cut-Off Current ICER R 1k -50 -1 nA
A VCB=-80V VCB=-80V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -20 -85 -155 -370 -50 -140 -210 -460 mV mV mV mV IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-5A, IB=-500mA* -1080 -1240 mV IC=-5A, IB=-500mA* Base-Emitter Saturation Voltage -6 -8 V Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT -935 -1070 mV IC=-5A, VCE=-1V* 1.6 1.2 1.0 0.8 0.6 1.4 1.0 0.8 0.6 0.4 0.2 0.2 0.01 0.1 1 1.4 200 200 90 25 VCE=1V 300 200 0.8 0.6 100 0.4 -55°C +25°C +100°C +175°C 1.6 0.2 Output Capacitance Cobo 74 pF VCB=-10V, f=1MHz Switching Times ton toff 82 350 ns ns IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V * Measured under pulsed conditions. Pulse width =300
s. duty cycle  2% Spice parameter data is available upon request for this device 0.01 0.1 1.2 1.0 0.8 0.6 0.4 0 10 20 1 1.4 1 hFE v IC VBE(sat) v IC VCE=1V 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 10 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 281 10 20 Single Pulse Test at Tamb=25°C 0.1 3 - 280 0.1 IC - Collector Current (Amps) 1.2 0.001 0.01 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C 1.6 0 IC/IB=10 0.2 0.001 IC - Collector Current (Amps) IC=-100mA, VCE=-10V f=50MHz VBE - (Volts) MHz 10 20 1.4 100 120 1 VCE(sat) v IC 1.0 IC=-10mA, VCE=-1V* IC=-2A, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* 300 0.1 VCE(sat) v IC 0.001 100 100 75 10 0.01 IC - Collector Current (Amps) 1.2 0 0.001 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 0 10 20 IC/IB=10 1.2 0.4 0.001 -55°C +25°C +175°C Tamb=25°C IC/IB=10 1.4 0 VBE(sat) IC/IB=50 1.6 hFE - Normalised Gain Collector-Emitter Breakdown Voltage MAX. VCE(sat) - (Volts) TYP. hFE - Typical Gain MIN. VBE(sat) - (Volts) SYMBOL VCE(sat) - (Volts) PARAMETER 100 FZT953 FZT953 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -140 -170 MAX. UNIT CONDITIONS. V IC=-100
A IC/IB=50 1.6 1.6 Collector Cut-Off Current ICBO -50 -1 nA
A VCB=-100V VCB=-100V, Tamb=100°C Collector Cut-Off Current ICER R 1k -50 -1 nA
A VCB=-100V VCB=-100V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -50 -115 -220 -420 mV mV mV mV IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* -6 V -8 V IC=-10mA* IE=-100
A 1.0 0.8 0.6 0.4 Base-Emitter Turn-On Voltage VBE(on) hFE -1010 -925 100 100 50 30 200 200 90 50 15 -1170 -1160 mV mV IC=-4A, IB=-400mA* IC=-4A, VCE=-1V* Transition Frequency fT 125 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 65 pF VCB=-10V, f=1MHz Switching Times ton toff 110 460 ns ns IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2% Spice parameter data is available upon request for this device 0.001 0.01 0.1 1 0.6 0 10 20 0.001 0.01 1.4 0.1 1 10 20 IC - Collector Current (Amps) VCE(sat) v IC +100°C +25°C -55°C 1.6 VCE=1V 1.0 200 0.8 0.6 100 0.4 -55°C +25°C +100°C +175°C 1.6 300 1.2 1.4 0.2 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 20 1 0 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 20 Single Pulse Test at Tamb=25°C 10 -55°C +25°C +100°C +175°C 1.6 1.4 VCE=1V 1.2 1.0 0.8 0.6 0.4 0.2 0 3 - 282 0.8 0.2 IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-3A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* 300 1.0 VCE(sat) v IC hFE - Normalised Gain VBE(sat) 1.2 IC - Collector Current (Amps) VBE - (Volts) Base-Emitter Saturation Voltage 1.4 IC/IB=10 0.4 0.2 0 -20 -90 -160 -300 VCE(sat) - (Volts) V(BR)EBO -120 1.2 VBE(sat) - (Volts) Emitter-Base Breakdown Voltage -100 V IC - Collector Current (Amps) V(BR)CEO -170 1.4 hFE - Typical Gain Collector-Emitter Breakdown Voltage -140 VCE(sat) - (Volts) IC=-1
A, RB1k V(BR)CER -55°C +25°C +175°C Tamb=25°C IC/IB=10 Collector-Emitter Breakdown Voltage Static Forward Current Transfer TYPICAL CHARACTERISTICS 0.001 0.01 0.1 1 10 20 1 0.1 0.01 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 283 100 FZT953 FZT953 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -140 -170 MAX. UNIT CONDITIONS. V IC=-100
A IC/IB=50 1.6 1.6 Collector Cut-Off Current ICBO -50 -1 nA
A VCB=-100V VCB=-100V, Tamb=100°C Collector Cut-Off Current ICER R 1k -50 -1 nA
A VCB=-100V VCB=-100V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -50 -115 -220 -420 mV mV mV mV IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* -6 V -8 V IC=-10mA* IE=-100
A 1.0 0.8 0.6 0.4 Base-Emitter Turn-On Voltage VBE(on) hFE -1010 -925 100 100 50 30 200 200 90 50 15 -1170 -1160 mV mV IC=-4A, IB=-400mA* IC=-4A, VCE=-1V* Transition Frequency fT 125 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 65 pF VCB=-10V, f=1MHz Switching Times ton toff 110 460 ns ns IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2% Spice parameter data is available upon request for this device 0.001 0.01 0.1 1 0.6 0 10 20 0.001 0.01 1.4 0.1 1 10 20 IC - Collector Current (Amps) VCE(sat) v IC +100°C +25°C -55°C 1.6 VCE=1V 1.0 200 0.8 0.6 100 0.4 -55°C +25°C +100°C +175°C 1.6 300 1.2 1.4 0.2 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 20 1 0 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 20 Single Pulse Test at Tamb=25°C 10 -55°C +25°C +100°C +175°C 1.6 1.4 VCE=1V 1.2 1.0 0.8 0.6 0.4 0.2 0 3 - 282 0.8 0.2 IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-3A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* 300 1.0 VCE(sat) v IC hFE - Normalised Gain VBE(sat) 1.2 IC - Collector Current (Amps) VBE - (Volts) Base-Emitter Saturation Voltage 1.4 IC/IB=10 0.4 0.2 0 -20 -90 -160 -300 VCE(sat) - (Volts) V(BR)EBO -120 1.2 VBE(sat) - (Volts) Emitter-Base Breakdown Voltage -100 V IC - Collector Current (Amps) V(BR)CEO -170 1.4 hFE - Typical Gain Collector-Emitter Breakdown Voltage -140 VCE(sat) - (Volts) IC=-1
A, RB1k V(BR)CER -55°C +25°C +175°C Tamb=25°C IC/IB=10 Collector-Emitter Breakdown Voltage Static Forward Current Transfer TYPICAL CHARACTERISTICS 0.001 0.01 0.1 1 10 20 1 0.1 0.01 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 283 100