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MBRD1040-T-F

MBRD1040-T-F

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    TO-252

  • 描述:

    DIODE SCHOTTKY 40V 10A DPAK

  • 数据手册
  • 价格&库存
MBRD1040-T-F 数据手册
MBRD1040 10A LOW VF SCHOTTKY BARRIER RECTIFIER SPICE MODEL: MBRD1040 NEW PRODUCT Features · · · · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Maximum Junction Temperature Rating Very Low Forward Voltage Drop Very Low Leakage Current For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 P 4 1 · · · Min Max G A 6.3 6.7 H B ¾ 10 C 0.3 0.8 3 M D Case: DPAK Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking Information: See Page 2 Weight: 0.4 grams (approx.) Maximum Ratings 2 Dim J B Mechanical Data · · DPAK E A K C L PIN 1 PIN 4, BOTTOMSIDE HEAT SINK PIN 3 Note: Pins 1 & 3 must be electrically connected at the printed circuit board. D 2.3 Nominal E 2.1 2.5 G 0.4 0.6 H 1.2 1.6 J 5.3 5.7 K 0.5 Nominal L 1.3 M 1.0 1.8 ¾ P 5.1 5.5 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Value Unit VRRM VRWM VR 40 V VR(RMS) 28 V IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) IFSM 100 A Typical Thermal Resistance Junction to Case RqJC 6.0 °C/W Typical Thermal Resistance Junction to Ambient RqJA 80 °C/W Tj -65 to +150 °C TSTG -65 to +150 °C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Also see Figure 4) Operating Temperature Range Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 40 ¾ ¾ V IR = 1mA Forward Voltage (Note 1) VFM ¾ ¾ ¾ 0.45 ¾ 0.47 0.49 0.41 0.51 V IF = 8A, TS = 25°C IF = 8A, TS = 125°C IF = 10A, TS = 25°C Peak Reverse Current (Note 1) IRM ¾ ¾ 0.1 12.5 0.3 25 mA TS = 25°C, VR = 35V TS = 100°C, VR = 35V Junction Capacitance Cj ¾ 700 ¾ pF f = 1.0MHz, VR = 4.0V DC Characteristic Reverse Breakdown Voltage (Note 1) Notes: Test Condition 1. Short duration test pulse used to minimize self-heating effect. DS30282 Rev. 3 - 2 1 of 3 www.diodes.com MBRD1040 ã Diodes Incorporated Notes: Device Packaging Shipping MBRD1040-T DPAK 2500/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MBRD1040 IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 TA = +150°C 1 TA = +25°C 0.1 0.01 TA = +75°C 0.001 0.0001 0 100 200 300 400 600 500 IR, INSTANTANEOUS REVERSE CURRENT (mA) MBRD1040 = Product type marking code = Manufacturers’ code marking YWW = Date code marking Y = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 YWW 1000 TA = +150ºC 100 TA = +100ºC 10 1 TA = +75ºC 0.1 TA = +25ºC 0.01 0 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Typical Forward Characteristics 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 12 IF(AV), AVERAGE FORWARD CURRENT (A) 10,000 Cj, JUNCTION CAPACITANCE (pF) NEW PRODUCT Ordering Information (Note 2) f = 1MHz 1000 100 0 5 10 15 20 25 30 35 40 Note 3 10 6 Note 5 4 2 0 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Junction Capacitance vs. Reverse Voltage DS30282 Rev. 3 - 2 Note 4 8 2 of 3 www.diodes.com -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 DC Forward Current Derating MBRD1040 NEW PRODUCT PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) Notes: 8 Tj = 150°C 7 Note 7 6 5 DC 4 Note 6 3 2 1 0 0 3 4.5 6 7.5 9 10.5 12 13.5 15 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 5 Forward Power Dissipation (Per Element) 1.5 3. TA = TSOLDERING POINT, RqJC = 6.0°C/W, RqCA = 0°C/W. 4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. RqJA in range of 15-30°C/W. 5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 60-75°C/W. 6. Maximum power disspiation when the device is mounted in accordance to the conditions described in Note 5. 7. Maximum power disspation when the device is mounted in accordance to the conditions described in Note 4. DS30282 Rev. 3 - 2 3 of 3 www.diodes.com MBRD1040
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