PAM3112DAB120

NOT RECOMMENDED FOR NEW DESIGN USE AP2127 PAM3112 300mA CMOS LINEAR REGULATOR Description Pin Assignments The PAM3112 regulator features low quiescent current (65µA Typ) and excellent line/load regulation, making it ideal for battery powered applications. The output voltage can be 1.2V or 1.3V. Space-saving packages SOT23, TSOT25, SOT-89 and SC70 are attractive for portable and handheld applications. It has both thermal shutdown and a current limit features to prevent device failure under extreme operating conditions. The device is stable with an output capacitance of 2.2µF or greater. Top View SOT23 Top View TSOT25 Features  Accuracy within ±2%           Quiescent Current: 65µA Typ. Excellent Line/Load Regulation Guaranteed 300mA Output Current Fast Response Current Limiting Short Circuit Protection Low Temperature Coefficient Thermal Shutdown Space Saving Package: SOT23, TSOT25, SOT-89 and SC70 Pb-Free Package Applications  Cordless Phone       Cellular Phone Bluetooth Earphone Digital Camera Portable Electronics WLAN MP3 Player Typical Applications Circuit PAM3112 Document number: DS36424 Rev. 3 - 3 1 of 17 www.diodes.com May 2016 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE AP2127 PAM3112 Pin Configuration and Description Package Type SOT23 TSOT25 SOT89-3 SC70-3L SC70-4L SC70-5L 1 2 Pin Number 3 4 5 VOUT GND VIN GND VOUT VIN EN VIN GND VOUT GND VIN GND VOUT GND GND VIN VIN EN VOUT VIN GND VOUT EN — — BYP — — — VIN BYP — — VOUT — — — — VOUT Pin Name VIN GND EN BYP VOUT Function Input Ground Chip Enable (active high) Bypass Pin, need a 10nF capacitor connect to GND Output Functional Block Diagram PAM3112 Document number: DS36424 Rev. 3 - 3 2 of 17 www.diodes.com May 2016 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE AP2127 PAM3112 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground. Parameter Input Voltage Output Current Output Pin Voltage Rating 6.0 Unit V PD/(VIN – VO) — GND -0.3 to VIN +0.3V V 300, (5sec) 150 -65 to +150 Class B °C °C °C — Lead Soldering Temperature Maximum Junction Temperature Storage Temperature ESD Rating Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Parameter Junction Temperature Ambient Temperature Rating Unit -40 to +125 -40 to +85 °C Thermal Information Parameter Thermal Resistance (Junction to Case) Thermal Resistance (Junction to Ambient) Internal Power Dissipation (@TA = +25°C) PAM3112 Document number: DS36424 Rev. 3 - 3 Symbol θJC θJA PD 3 of 17 www.diodes.com Package Max SOT23/ TSOT25 130 SOT-89 SC70 SOT23/ TSOT25 SOT-89 SC70 SOT23/ TSOT25 SOT-89 SC70 45 TBD Unit °C/W 250 160 300 400 550 300 mW May 2016 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE AP2127 PAM3112 Electrical Characteristics (@TA = +25°C, VIN = 3V, CIN = 1µF, CO = 2.2µF, unless otherwise specified.) Parameter Symbol Test Conditions Input Voltage VIN — Output Voltage Accuracy VO IO = 1mA Output Current IO — Ground Current IGND Quiescent Current IQ IO = 1mA to 300mA IO = 0mA Line Regulation LNR VIN = 2.5V to 5.0V IO = 10mA Load Regulation LDR Short Circuit Current Min Typ Max Units 2.5 — 5.5 V -2 — +2 % 300 — Note 1 mA — 70 90 µA — 65 90 µA -0.15 0.10 0.15 %/V IO = 1mA to 300mA — 30 60 mV ISC VO = 0V — 130 — mA TC — — 40 — ppm/°C Over Temperature Shutdown OTS IO = 1mA — +150 — °C Over Temperature Hysteresis OTH IO = 1mA — +30 — °C f = 100Hz — 70 — f = 1kHz — 65 — Temperature Coefficient Power Supply Ripple Rejection PSRR IO = 100mA CBYP = 10nF dB Output Noise VN f = 10Hz to 100kHz, CBYP = 10nF — 50 — µVRMS EN Input High Threshold VIN VIN = 2.5V to 5V 1.5 — — V EN Input Low Threshold VIL VIN = 2.5V to 5V — — 0.3 V VEN = 0V — 0.01 1 µA Shutdown Current Notes: ISD 1. Output current is limited by PD, maximum IO = 400mW/ (VIN(MAX) – VO). PAM3112 Document number: DS36424 Rev. 3 - 3 4 of 17 www.diodes.com May 2016 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE AP2127 PAM3112 Typical Performance Characteristics (@TA = +25°C, CIN = 1µF, CO = 2.2µF, VO = 1.2V, unless otherwise specified.) PAM3112 Document number: DS36424 Rev. 3 - 3 5 of 17 www.diodes.com May 2016 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE AP2127 PAM3112 Typical Performance Characteristics (cont.) (@TA = +25°C, CIN = 1µF, CO = 2.2µF, VO = 1.2V, unless otherwise specified.) PAM3112 Document number: DS36424 Rev. 3 - 3 6 of 17 www.diodes.com May 2016 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE AP2127 PAM3112 Application Information Capacitor Selection and Regulator Stability Similar to any low dropout regulator, the external capacitors used with the PAM3112 must be carefully selected for regulator stability and performance. A capacitor CIN of more than 1µF can be used at the PAM3112 input pin, while there is no upper limit for the capacitance of CIN. Please note that the distance between CIN and the input pin of the PAM3112 should not exceed 0.5 inch. Ceramic capacitors are suitable for the PAM3112. Capacitors with larger values and lower ESR (equivalent series resistance) provide better PSRR and line-transient response. The PAM3112 is designed specifically to work with low ESR ceramic output capacitors in order to save space and improve performance. Using an output ceramic capacitor whose value is >2.2µF with ESR>5mΩ ensures stability. A 10nF bypass capacitor connected to BYP pin is suggested for suppressing output noise. The capacitor, in series connection with an internal 200kΩ resistor, forms a low-pass filter for noise reduction. Increasing the capacitance will slightly decrease the output noise, but increase the startup time. Load Transient Consideration Curve 7 of the PAM3112 load-transient response on page 6 shows two components of the output response, a DC shift from the output impedance due to the load current change and transient response. The DC shift is quite small due to excellent load regulation of the PAM3112. The transient spike, resulting from a step change in the load current from 1mA to 300mA, is 20mV. The ESR of the output capacitor is critical to the transient spike. A larger capacitance along with smaller ESR results in a smaller spike. Shutdown Input Operation The PAM3112 is shut down by pulling the EN input low and turned on by tying the EN input to VIN or leaving the EN input floating. Internal P-Channel Pass Transistor The PAM3112 features a 0.75Ω P-Channel MOSFET device as a pass transistor. The P-MOS pass transistor enables the PAM3112 to consume only 65µA of ground current during low dropout, light-load, or heavy-load operation. These features increase the battery operation life time. Input-Output (Dropout) Voltage A regulator's minimum input-output voltage difference (or dropout voltage) determines the lowest usable supply voltage. The PAM3112 has a typical 300mV dropout voltage. In batterypowered systems, this will determine the useful end-of-life battery voltage. Current Limit and Short Circuit Protection The PAM3112 features a current limit, which monitors and controls the gate voltage of the pass transistor. The output current can be limited to 400mA by regulating the gate voltage. The PAM3112 also has a built-in short circuit current limit. Thermal Considerations Thermal protection limits power dissipation in the PAM3112. When the junction temperature exceeds +150°C, the OTP (Over Temperature Protection) starts the thermal shutdown and turns the pass transistor off. The pass transistor resumes operation after the junction temperature drops below +120°C. For continuous operation, the junction temperature should be maintained below +125°C. The power dissipation is defined as: PD  VIN  VOUT  * IO  VIN * IGND The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surrounding airflow and temperature difference between junction and ambient. The maximum power dissipation can be calculated by the following formula:   PD(MAX )  TJ(MAX )  TA / JA PAM3112 Document number: DS36424 Rev. 3 - 3 7 of 17 www.diodes.com May 2016 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE AP2127 PAM3112 Application Information (cont.) Thermal Considerations Where TJ(MAX) is the maximum allowable junction temperature +125°C, TA is the ambient temperature and is the thermal resistance from the junction to the ambient. For example, as θJA is +250°C/W for the SOT23 and TSOT25 packages based on the standard JEDEC 51-3 for a single-layer thermal test board, the maximum power dissipation at TA = +25°C can be calculated by following formula: PD(MAX )  125C  25C / 250  0.4W SOT-23 It is also useful to calculate the junction temperature of the PAM3112 under a set of specific condition. Suppose the input voltage VIN =3.3V, the output current IO =150mA and the case temperature TA = +40°C measured by a thermal couple during operation, the power dissipation is defined as: PD  3.3V  1.2V  * 150mA  3.3V * 70A  315mW And the junction temperature, TJ can be calculated as follows: TJ = TA + PD*θJA TJ = 40°C +0.35W*250°C/W = 40°C +78.75°C = 118.75°C