ZTX555STOA

ZTX554 ZTX555 ISSUE 1 – MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 ZTX554/55-2 -0.8 tr ts ns µs 500 5 Switching time VCE(sat) - (Volts) IC/IB=10 -0.6 -0.4 -0.2 0 -0.0001 -0.001 -0.01 -0.1 -1 tf ns 1000 ts 400 4 800 300 3 600 200 2 100 1 tf 0 -0.01 IC - Collector Current (Amps) td ns 400 100 tr -0.1 50 0 0 -1 Switching Speeds -1.4 100 80 -1.2 VBE(sat) - (Volts) hFE - Normalised Gain (%) 200 IC - Collector Current (Amps) VCE(sat) v IC VCE=-10V 60 40 20 IC/IB=10 -0.0001 -0.001 -0.01 -0.1 -0.0001 -0.001 -0.01 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (Amps) -1.0 -0.8 -0.6 -0.1 -1 Single Pulse Test at Tamb=25°C 1.0 VCE=-10V 0.1 D.C. 1s 100ms 10ms 1.0ms 100µs 0.01 ZTX554 -0.0001 -0.001 -0.01 -0.1 -1 ZTX555 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-199 PARAMETER SYMBOL ZTX554 ZTX555 UNIT Collector-Base Voltage VCBO -140 -160 V Collector-Emitter Voltage VCEO -125 -150 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation: at Tamb = 25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL ZTX554 UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -140 -160 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -125 -150 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 -0.1 µA µA VCB=-120V VCB=-140V Emitter Cut-Off Current IEBO -0.1 -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.3 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1 -1 V IC=-100mA, IB=-10mA* Base-Emitter Turn-on Voltage VBE(on) -1 -1 V IC=-100mA, VCE=-10V* MIN. IC - Collector Current (Amps) -1.2 E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. -0.8 1 -1.4 E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -1.0 -0.6 0 VBE - (Volts) C B td 0 ZTX554 ZTX555 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 1000 Static Forward hFE Current Transfer Ratio 50 50 Transition Frequency fT 100 Output Capacitance Cobo MAX 300 ZTX555 MIN. 50 50 MAX 100 10 3-198 IC=-10mA, VCE=-10V* IC=-300mA, VCE=-10V* 300 10 MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz ZTX554 ZTX555 ISSUE 1 – MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 ZTX554/55-2 -0.8 tr ts ns µs 500 5 Switching time VCE(sat) - (Volts) IC/IB=10 -0.6 -0.4 -0.2 0 -0.0001 -0.001 -0.01 -0.1 -1 tf ns 1000 ts 400 4 800 300 3 600 200 2 100 1 tf 0 -0.01 IC - Collector Current (Amps) td ns 400 100 tr -0.1 50 0 0 -1 Switching Speeds -1.4 100 80 -1.2 VBE(sat) - (Volts) hFE - Normalised Gain (%) 200 IC - Collector Current (Amps) VCE(sat) v IC VCE=-10V 60 40 20 IC/IB=10 -0.0001 -0.001 -0.01 -0.1 -0.0001 -0.001 -0.01 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (Amps) -1.0 -0.8 -0.6 -0.1 -1 Single Pulse Test at Tamb=25°C 1.0 VCE=-10V 0.1 D.C. 1s 100ms 10ms 1.0ms 100µs 0.01 ZTX554 -0.0001 -0.001 -0.01 -0.1 -1 ZTX555 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-199 PARAMETER SYMBOL ZTX554 ZTX555 UNIT Collector-Base Voltage VCBO -140 -160 V Collector-Emitter Voltage VCEO -125 -150 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation: at Tamb = 25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL ZTX554 UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -140 -160 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -125 -150 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 -0.1 µA µA VCB=-120V VCB=-140V Emitter Cut-Off Current IEBO -0.1 -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.3 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1 -1 V IC=-100mA, IB=-10mA* Base-Emitter Turn-on Voltage VBE(on) -1 -1 V IC=-100mA, VCE=-10V* MIN. IC - Collector Current (Amps) -1.2 E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. -0.8 1 -1.4 E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -1.0 -0.6 0 VBE - (Volts) C B td 0 ZTX554 ZTX555 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 1000 Static Forward hFE Current Transfer Ratio 50 50 Transition Frequency fT 100 Output Capacitance Cobo MAX 300 ZTX555 MIN. 50 50 MAX 100 10 3-198 IC=-10mA, VCE=-10V* IC=-300mA, VCE=-10V* 300 10 MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz