ZTX655STOB

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain (%) VCE(sat) - (Volts) 100 IC/IB=10 0.10 0 0.01 0.1 1 10 40 0 0.1 1 VCE(sat) v IC hFE v IC 10 1.2 IC/IB=10 VCE=5V 1.0 0.8 0.4 0.01 0.1 1 Switching time 5 V ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ZTX654 Collector Cut-Off Current ICBO 100 Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage 10 ts µs IB1=IB2=IC/10 VCE=10V ts 3.0 td 2.0 0.5 0.4 0.3 1.0 tf 0.2 0.01 tr 0.1 1000 IC - Collector Current (Amps) Switching Speeds 3-226 VEBO V(BR)EBO 1 0 Safe Operating Area Emitter-Base Voltage Peak Pulse Current Emitter-Base Breakdown Voltage 0.1 100 V V(BR)CEO 0.1 0.01 10 150 Collector-Emitter Breakdown Voltage 0.01 0.6 VCE - Collector Voltage (Volts) 125 125 0.7 1 VCEO V(BR)CBO td tr tf µs ZTX655 V Collector-Emitter Voltage Collector-Base Breakdown Voltage VBE(on) v IC ZT X6 54 UNIT 150 0.6 Single Pulse Test at Tamb=25°C 0.1 ZTX655 125 SYMBOL VBE(sat) v IC D.C. 1s 100ms 10ms 1.0ms 300µs ZTX654 VCBO PARAMETER IC - Collector Current (Amps) 1.0 SYMBOL Collector-Base Voltage 0.8 IC - Collector Current (Amps) 10 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 0.4 10 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 20 IC - Collector Current (Amps) VBE - (Volts) VBE(sat) - (Volts) C B VCE=5V 60 IC - Collector Current (Amps) 0.6 IC - Collector Current (Amps) 80 0.01 1.2 ZTX654 ZTX655 1 ZTX655 UNIT CONDITIONS. 150 V IC=100µ A, IE=0 125 150 V IC=10mA, IB=0* 5 5 V IE=100µ A, IC=0 100 nA nA VCB=100V, IE=0 VCB=125V, IE=0 100 100 nA VEB=3V, IC=0 VCE(sat) 0.5 0.5 0.5 0.5 V V IC=500mA, IB=50mA* IC=1A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 1.1 V IC=500mA, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 1.0 V IC=500mA, VCE=5V* Static Forward Current Transfer Ratio hFE 50 50 20 50 50 20 Transition Frequency fT 30 30 Output Capacitance Cobo MIN. MAX. MIN. 20 3-225 MAX. IC=10mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* 20 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain (%) VCE(sat) - (Volts) 100 IC/IB=10 0.10 0 0.01 0.1 1 10 40 0 0.1 1 VCE(sat) v IC hFE v IC 10 1.2 IC/IB=10 VCE=5V 1.0 0.8 0.4 0.01 0.1 1 Switching time 5 V ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ZTX654 Collector Cut-Off Current ICBO 100 Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage 10 ts µs IB1=IB2=IC/10 VCE=10V ts 3.0 td 2.0 0.5 0.4 0.3 1.0 tf 0.2 0.01 tr 0.1 1000 IC - Collector Current (Amps) Switching Speeds 3-226 VEBO V(BR)EBO 1 0 Safe Operating Area Emitter-Base Voltage Peak Pulse Current Emitter-Base Breakdown Voltage 0.1 100 V V(BR)CEO 0.1 0.01 10 150 Collector-Emitter Breakdown Voltage 0.01 0.6 VCE - Collector Voltage (Volts) 125 125 0.7 1 VCEO V(BR)CBO td tr tf µs ZTX655 V Collector-Emitter Voltage Collector-Base Breakdown Voltage VBE(on) v IC ZT X6 54 UNIT 150 0.6 Single Pulse Test at Tamb=25°C 0.1 ZTX655 125 SYMBOL VBE(sat) v IC D.C. 1s 100ms 10ms 1.0ms 300µs ZTX654 VCBO PARAMETER IC - Collector Current (Amps) 1.0 SYMBOL Collector-Base Voltage 0.8 IC - Collector Current (Amps) 10 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 0.4 10 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 20 IC - Collector Current (Amps) VBE - (Volts) VBE(sat) - (Volts) C B VCE=5V 60 IC - Collector Current (Amps) 0.6 IC - Collector Current (Amps) 80 0.01 1.2 ZTX654 ZTX655 1 ZTX655 UNIT CONDITIONS. 150 V IC=100µ A, IE=0 125 150 V IC=10mA, IB=0* 5 5 V IE=100µ A, IC=0 100 nA nA VCB=100V, IE=0 VCB=125V, IE=0 100 100 nA VEB=3V, IC=0 VCE(sat) 0.5 0.5 0.5 0.5 V V IC=500mA, IB=50mA* IC=1A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 1.1 V IC=500mA, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 1.0 V IC=500mA, VCE=5V* Static Forward Current Transfer Ratio hFE 50 50 20 50 50 20 Transition Frequency fT 30 30 Output Capacitance Cobo MIN. MAX. MIN. 20 3-225 MAX. IC=10mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* 20 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz