PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ZTX712
ISSUE 1 MAY 94
FEATURES
* 60 Volt VCEO
* 0.8 Amp continuous current
* Gain of 10K at IC=0.5 Amp
APPLICATIONS
* Lamp, solenoid and relay drivers
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-10
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-800
mA
Power Dissipation at Tamb = 25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-80
MIN.
MAX.
V
IC=-10µ A
Collector-Emitter
Breakdown Voltage
VCEO(SUS)
-60
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-10
V
IE=-10µ A
Collector Cut-Off Current
ICBO
-100
nA
VCB=-60V, IE=0
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-1.25
V
IC=-800mA, IB=-8mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-1.8
V
IC=-800mA, VCE=-5V*
Static Forward
Current Transfer Ratio
hFE
5K
10K
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-253
IC=-100mA, VCE=-5V*
IC=-500mA, VCE=-5V*
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