ZTX712STZ

PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ZTX712 ISSUE 1 – MAY 94 FEATURES * 60 Volt VCEO * 0.8 Amp continuous current * Gain of 10K at IC=0.5 Amp APPLICATIONS * Lamp, solenoid and relay drivers C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -10 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -800 mA Power Dissipation at Tamb = 25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -80 MIN. MAX. V IC=-10µ A Collector-Emitter Breakdown Voltage VCEO(SUS) -60 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -10 V IE=-10µ A Collector Cut-Off Current ICBO -100 nA VCB=-60V, IE=0 Emitter Cut-Off Current IEBO -100 nA VEB=-8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -1.25 V IC=-800mA, IB=-8mA* Base-Emitter Turn-On Voltage VBE(on) -1.8 V IC=-800mA, VCE=-5V* Static Forward Current Transfer Ratio hFE 5K 10K *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-253 IC=-100mA, VCE=-5V* IC=-500mA, VCE=-5V*