ZVP0120ASTOA

ZVP0120A VGS= -10V -8V -7V -0.7 -0.6 ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS -0.5 -6V -0.4 -0.3 -5V -0.2 -4.5V -0.1 -4V 0 -3.5V 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -0.3 -14 -12 -10 -8 ID= -300mA -6 -4 -200mA -2 -100mA -50mA 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -16 -0.1 -4V -3.5V 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -1 -2 -3 -4 -5 -6 -7 -8 -9-10 Normalised RDS(on) and VGS(th) -20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage VALUE UNIT VDS -200 V -110 mA -1 A Saturation Characteristics Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C VDS= -25V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -0.5 -0.4 -10V -0.3 -0.2 -0.1 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 2.4 2.2 2.0 e nc ta sis e R ce ur So 1.8 1.6 1.4 ) on S( RD VGS=-10V ID=-0.1A ain Dr 1.2 1.0 Gate Thresh old 0.8 -40 -20 0 VGS=VDS ID=-1mA Voltage VGS (th) 20 40 60 80 100 120 140 160 180 Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3-407 SYMBOL Drain-Source Voltage IDM -0.6 0.6 PARAMETER ID 2.6 10 ABSOLUTE MAXIMUM RATINGS. Pulsed Drain Current VGS-Gate Source Voltage (Volts) ID= -300mA -200mA -I00mA -50mA E-Line TO92 Compatible Continuous Drain Current at Tamb=25°C Transfer Characteristics 50 S VDS - Drain Source Voltage (Volts) -0.7 Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) D G -4.5V VGS-Gate Source Voltage (Volts) 100 ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=32Ω -0.2 Output Characteristics -18 ZVP0120A -5V VDS - Drain Source Voltage (Volts) -20 VGS= -10V -8V -7V -6V -0.4 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -200 Gate-Source Threshold Voltage VGS(th) -1.5 Gate-Body Leakage Zero Gate Voltage Drain Current V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS IGSS 20 nA VGS=± 20V, VDS=0V IDSS -10 -100 µA µA VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) -250 Forward Transconductance (1)(2) gfs Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 7 pF 32 50 mA VDS=-25 V, VGS=-10V Ω VGS=-10V,ID=-125mA mS VDS=-25V,ID=-125mA Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns VDS=-25 V, VGS=0V, f=1MHz VDD ≈− 25V, ID=-125mA 3-406 Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. ( 1 ) ZVP0120A VGS= -10V -8V -7V -0.7 -0.6 ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS -0.5 -6V -0.4 -0.3 -5V -0.2 -4.5V -0.1 -4V 0 -3.5V 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -0.3 -14 -12 -10 -8 ID= -300mA -6 -4 -200mA -2 -100mA -50mA 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -16 -0.1 -4V -3.5V 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -1 -2 -3 -4 -5 -6 -7 -8 -9-10 Normalised RDS(on) and VGS(th) -20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage VALUE UNIT VDS -200 V -110 mA -1 A Saturation Characteristics Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C VDS= -25V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -0.5 -0.4 -10V -0.3 -0.2 -0.1 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 2.4 2.2 2.0 e nc ta sis e R ce ur So 1.8 1.6 1.4 ) on S( RD VGS=-10V ID=-0.1A ain Dr 1.2 1.0 Gate Thresh old 0.8 -40 -20 0 VGS=VDS ID=-1mA Voltage VGS (th) 20 40 60 80 100 120 140 160 180 Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3-407 SYMBOL Drain-Source Voltage IDM -0.6 0.6 PARAMETER ID 2.6 10 ABSOLUTE MAXIMUM RATINGS. Pulsed Drain Current VGS-Gate Source Voltage (Volts) ID= -300mA -200mA -I00mA -50mA E-Line TO92 Compatible Continuous Drain Current at Tamb=25°C Transfer Characteristics 50 S VDS - Drain Source Voltage (Volts) -0.7 Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) D G -4.5V VGS-Gate Source Voltage (Volts) 100 ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=32Ω -0.2 Output Characteristics -18 ZVP0120A -5V VDS - Drain Source Voltage (Volts) -20 VGS= -10V -8V -7V -6V -0.4 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -200 Gate-Source Threshold Voltage VGS(th) -1.5 Gate-Body Leakage Zero Gate Voltage Drain Current V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS IGSS 20 nA VGS=± 20V, VDS=0V IDSS -10 -100 µA µA VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) -250 Forward Transconductance (1)(2) gfs Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 7 pF 32 50 mA VDS=-25 V, VGS=-10V Ω VGS=-10V,ID=-125mA mS VDS=-25V,ID=-125mA Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns VDS=-25 V, VGS=0V, f=1MHz VDD ≈− 25V, ID=-125mA 3-406 Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. ( 1 ) ZVP0120A TYPICAL CHARACTERISTICS gfs-Transconductance (mS) gfs-Transconductance (mS) 200 180 VDS=-25V 160 140 120 100 80 60 40 20 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 200 180 160 140 120 80 60 40 20 0 0 -0.8 Transconductance v drain current 90 80 70 Ciss 60 50 40 30 20 Coss 10 Crss -30 -40 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 100 -20 -2 -3 -4 -5 -6 -7 -8 -9 -10 Transconductance v gate-source voltage 110 -10 -1 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) 0 VDS=-25V 100 0 ID=- 0.4A -2 -4 -6 VDS= -50V -100V -180V -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-408