ZVP1320A

ZVP1320A TYPICAL CHARACTERISTICS VGS= -20V -10V -9V -8V ID - Drain Current (mA) -240 -200 -160 -7V -160 -120 -6V -80 -5V -40 -4V -120 -100 -4 -8 -12 -16 -20 -24 -28 -32 -36 -20 -4V 0 VDS - Drain Source Voltage (Volts) -2 -4 -6 -8 -10 VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics -6 ID= -60mA -4 -40mA -2 ID - Drain Current (mA) -140 -8 -120 -20mA VDS= -10V -80 -60 -40 0 0 -2 -4 -6 -8 0 -10 VGS-Gate Source Voltage (Volts) -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics E-Line TO92 Compatible PARAMETER SYMBOL Drain-Source Voltage VDS Continuous Drain Current at Tamb=25°C ID -70 mA Pulsed Drain Current IDM -400 mA Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -200 Gate-Source Threshold Voltage VGS(th) -1.5 30 Ciss 20 10 0 0 -20 -40 -60 -80 Coss Crss -100 gfs-Forward Transconductance(mS) C-Capacitance (pF) 40 VDS-Drain Source Voltage (Volts) 60 40 VDS=-10V 30 20 10 0 -20 -40 -60 -80 -100 -120 ID-Drain Current (mA) 3-415 UNIT -200 V MAX. UNIT CONDITIONS. V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V IDSS -10 -50 µA µA VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-25 V, VGS=-10V 80 Ω VGS=-10V,ID=-50mA mS VDS=-25V,ID=-50mA Forward Transconductance (1)(2) 50 Transconductance v drain current Capacitance v drain-source voltage VALUE Zero Gate Voltage Drain Current -100 Static Drain-Source On-State RDS(on) Resistance (1) 50 S ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -100 -20 0 D G ABSOLUTE MAXIMUM RATINGS. -40 -40 -10 ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=80Ω -5V -60 0 0 ZVP1320A -80 0 VDS-Drain Source Voltage (Volts) VGS= -20V -10V -8V -7V -6V -140 ID - Drain Current (mA) -280 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET gfs 25 Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 15 pF Reverse Transfer Capacitance (2) Crss 5 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 8 ns Fall Time (2)(3) tf 16 ns VDS=-25 V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-50mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-414 ( 3 ZVP1320A TYPICAL CHARACTERISTICS VGS= -20V -10V -9V -8V ID - Drain Current (mA) -240 -200 -160 -7V -160 -120 -6V -80 -5V -40 -4V -120 -100 -4 -8 -12 -16 -20 -24 -28 -32 -36 -20 -4V 0 VDS - Drain Source Voltage (Volts) -2 -4 -6 -8 -10 VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics -6 ID= -60mA -4 -40mA -2 ID - Drain Current (mA) -140 -8 -120 -20mA VDS= -10V -80 -60 -40 0 0 -2 -4 -6 -8 0 -10 VGS-Gate Source Voltage (Volts) -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics E-Line TO92 Compatible PARAMETER SYMBOL Drain-Source Voltage VDS Continuous Drain Current at Tamb=25°C ID -70 mA Pulsed Drain Current IDM -400 mA Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -200 Gate-Source Threshold Voltage VGS(th) -1.5 30 Ciss 20 10 0 0 -20 -40 -60 -80 Coss Crss -100 gfs-Forward Transconductance(mS) C-Capacitance (pF) 40 VDS-Drain Source Voltage (Volts) 60 40 VDS=-10V 30 20 10 0 -20 -40 -60 -80 -100 -120 ID-Drain Current (mA) 3-415 UNIT -200 V MAX. UNIT CONDITIONS. V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V IDSS -10 -50 µA µA VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-25 V, VGS=-10V 80 Ω VGS=-10V,ID=-50mA mS VDS=-25V,ID=-50mA Forward Transconductance (1)(2) 50 Transconductance v drain current Capacitance v drain-source voltage VALUE Zero Gate Voltage Drain Current -100 Static Drain-Source On-State RDS(on) Resistance (1) 50 S ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -100 -20 0 D G ABSOLUTE MAXIMUM RATINGS. -40 -40 -10 ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=80Ω -5V -60 0 0 ZVP1320A -80 0 VDS-Drain Source Voltage (Volts) VGS= -20V -10V -8V -7V -6V -140 ID - Drain Current (mA) -280 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET gfs 25 Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 15 pF Reverse Transfer Capacitance (2) Crss 5 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 8 ns Fall Time (2)(3) tf 16 ns VDS=-25 V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-50mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-414 ( 3 ZVP1320A 60 50 VDS=-10V 40 30 20 10 0 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) gfs-Forward Transconductance (mS) TYPICAL CHARACTERISTICS 0 -2 ID= -150mA VDS= -50V -100V -200V -4 -6 -8 -10 -12 -14 -16 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS-Gate Source Voltage (Volts) Q-Charge (nC) Gate charge v gate-source voltage 2.4 1000 VGS=-5V -6V Normalised RDS(on) and VGS(th) RDS(on) -Drain Source Resistance (Ω) Transconductance v gate-source voltage -8V -10V 100 -20V 2.2 n) (o DS 2.0 1.8 1.6 1.4 Dr 1.2 1.0 Gate Thresh old 0.8 -1 -10 -100 VGS=VDS ID=-1mA Voltage VGS (TH) 0.4 0 20 40 60 80 100 120 140 160 180 -1000 ID-Drain Current (mA) On-resistance v drain current VGS=-10V ID=-50mA 0.6 -40 -20 10 Re ce ur o -S ain eR nc ta sis T-Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3-416