ZX3CD1S1M832TA

OBSOLETE - PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS™ Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV (@1A); IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation PNP transistor and a 1A Schottky barrier diode. This excellent combination provides users with highly efficient performance in applications including DC-DC and charging circuits. Users will also gain several other key benefits: Performance capability equivalent to much larger packages 3mm x 2mm Dual Die MLP Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (0.9mm nom) Cathode C Reduced component count FEATURES B • Extremely Low Saturation Voltage (-140mV @1A) • HFE characterised up to -10A • IC = -4A Continuous Collector Current E Anode • Extremely Low VF, fast switching Schottky • 3mm x 2mm MLP APPLICATIONS • DC - DC Converters PINOUT • Mobile Phones • Charging Circuits • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZX3CD1S1M832TA 7 ⴕⴕ 8mm 3000 ZX3CD1S1M832TC 13ⴕ ⴕ 8mm 10000 3mm x 2mm Dual MLP underside view DEVICE MARKING 1S1 ISSUE 2 - OCTOBER 2007 1 OBSOLETE - PLEASE USE ZXTPS717MC ZX3CD1S1M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Transistor Collector-Base Voltage V CBO -20 V Collector-Emitter Voltage V CEO -12 V Emitter-Base Voltage V EBO -7.5 V Peak Pulse Current I CM -12 A Continuous Collector Current (a)(f) IC -4 A Continuous Collector Current (b)(f) IC -4.4 A Base Current IB 1000 mA Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 9 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 24 W mW/°C Storage Temperature Range T stg Junction Temperature Tj -55 to +150 °C 150 °C THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(f) R θJA VALUE UNIT 83 °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t