ZXTDAM832TA

ZXTDAM832 MPPS™ Miniature Package Power Solutions DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 45m ; IC= 4.5A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels 3mm x 2mm (Dual die) MLP PCB area and device placement savings Lower package height (nom. 0.9mm) C1 C2 Reduced component count FEATURES • Low Equivalent On Resistance B1 B2 • Extremely Low Saturation Voltage (100mV @1A) • hFE characterised up to 12A • IC= 4.5A Continuous Collector Current E2 • 3mm x 2mm MLP E1 APPLICATIONS • DC - DC Converters (FET Drivers) • Charging circuits • Power switches PINOUT • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXTDAM832TA 7 ⴕⴕ 8mm 3000 ZXTDAM832TC 13ⴕⴕ 8mm 10000 3mm x 2mm MLP underside view DEVICE MARKING DAA ISSUE 1 - JUNE 2002 1 ZXTDAM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO 7.5 V Peak Pulse Current I CM 15 A Continuous Collector Current (a)(f) IC 4.5 A Continuous Collector Current (b)(f) IC 5.0 A Base Current IB 1000 mA Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 9 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 24 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(f) R θJA 83.3 °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t