ZXMN3A02N8TC

NOT RECOMMEND FOR NEW DESIGN ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET ID = 9.0A N O FO T R RE N C EW O M D M ES EN IG D N ED SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025 DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN3A02N8TA 7” 12mm 500 units ZXMN3A02N8TC 13” 12mm 2500 units PINOUT DEVICE MARKING • ZXMN 3A02 Top View ISSUE 4 - JANUARY 2005 1 ZXMN3A02N8 Document number: 33529 Rev. 5 - 3 SEMICONDUCTORS August 2015 ©Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN ZXMN3A02N8 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage V DSS Gate Source Voltage V GS Continuous Drain Current V GS =-10V; T A =25°C (b) V GS =-10V; T A =70°C (b) V GS =-10V; T A =25°C (a) ID LIMIT UNIT 30 V 20 V 9.0 7.2 7.3 A N O FO T R RE N C EW O M D M ES EN IG D N ED PARAMETER Pulsed Drain Current (c) I DM 44 A A Continuous Source Current (Body Diode) (b) IS 3.2 Pulsed Source Current (Body Diode) (c) I SM 44 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.56 12.5 W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 2.5 20 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 80 °C/W Junction to Ambient (b) R θJA 50 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. ISSUE 4 - JANUARY 2005 SEMICONDUCTORS ZXMN3A02N8 Document number: 33529 Rev. 5 - 3 2 August 2015 ©Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN ZXMN3A02N8 N O FO T R RE N C EW O M D M ES EN IG D N ED CHARACTERISTICS ISSUE 4 - JANUARY 2005 3 ZXMN3A02N8 Document number: 33529 Rev. 5 - 3 SEMICONDUCTORS August 2015 ©Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN ZXMN3A02N8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage V (BR)DSS 30 Zero Gate Voltage Drain Current I DSS 1 Gate-Body Leakage I GSS 100 Gate-Source Threshold Voltage V GS(th) CONDITIONS. STATIC V I D =250µA, V GS =0V ␮A V DS =30V, V GS =0V V GS =⫾20V, V DS =0V V ⍀ ⍀ I =250␮A, V DS = V GS D V GS =10V, I D =12A V GS =4.5V, I D =10.2A V DS =10V,I D =12A N O FO T R RE N C EW O M D M ES EN IG D N ED nA 1.0 Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) 0.025 0.035 g fs 22 S Input Capacitance C iss 1400 pF Output Capacitance C oss 209 pF Reverse Transfer Capacitance C rss 120 pF Turn-On Delay Time t d(on) 3.9 ns Rise Time tr 5.5 ns Turn-Off Delay Time t d(off) 35.0 ns Fall Time tf 7.6 ns Gate Charge Qg 14.5 nC V DS =15V,V GS =5V, I D =5.5A (refer to test circuit) Total Gate Charge Qg 26.8 nC Gate-Source Charge Q gs 4.7 nC Gate-Drain Charge Q gd V DS =15V,V GS =10V, I D =5.5A (refer to test circuit) 4.7 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr DYNAMIC (3) V DS =25V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =10V, I D =1A R G ≅6.0Ω, V GS =4.5V (refer to test circuit) SOURCE-DRAIN DIODE V T J =25°C, I S =9A, V GS =0V 17 ns T J =25°C, I F =5.5A, di/dt= 100A/µs 8.3 nC 0.95 NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 4 - JANUARY 2005 SEMICONDUCTORS ZXMN3A02N8 Document number: 33529 Rev. 5 - 3 4 August 2015 ©Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN ZXMN3A02N8 N O FO T R RE N C EW O M D M ES EN IG D N ED CHARACTERISTICS ISSUE 4 - JANUARY 2005 5 ZXMN3A02N8 Document number: 33529 Rev. 5 - 3 SEMICONDUCTORS August 2015 ©Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN ZXMN3A02N8 N O FO T R RE N C EW O M D M ES EN IG D N ED CHARACTERISTICS ISSUE 4 - JANUARY 2005 SEMICONDUCTORS ZXMN3A02N8 Document number: 33529 Rev. 5 - 3 6 August 2015 ©Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN ZXMN3A02N8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES ⍜ MILLIMETRES DIM MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 L H E N O FO T R RE N C EW O M D M ES EN IG D N ED D Pin 1 c A A1 e 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e Seating Plane b D CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 ⍜ 0⬚ 8⬚ 0⬚ 8⬚ h 0.010 0.020 0.25 0.50 © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 4 - JANUARY 2005 7 ZXMN3A02N8 Document number: 33529 Rev. 5 - 3 SEMICONDUCTORS August 2015 ©Diodes Incorporated