ZXTDBM832TA

OBSOLETE - PLEASE USE ZXTD618MC ZXTDBM832 MPPS™ Miniature Package Power Solutions DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 47m ; IC= 4.5A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packges Improved circuit efficiency & power levels 3mm x 2mm (Dual die) MLP PCB area and device placement savings Lower package height (nom 0.9mm) C1 C2 Reduced component count FEATURES • Low Equivalent On Resistance B1 B2 • Extremely Low Saturation Voltage (150mV @1A) • hFE characterised up to 6A • IC=4.5A Continuous Collector Current E2 • 3mm x 2mm MLP E1 APPLICATIONS • DC - DC Converters • Charging circuits • Power switches PINOUT • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXTDCM832TA 7 ⴕⴕ 8mm 3000 ZXTDCM832TC 13ⴕ ⴕ 8mm 10000 DEVICE MARKING 3mm x 2mm MLP underside view DBB ISSUE 1 - JUNE 2002 1 OBSOLETE - PLEASE USE ZXTD618MC ZXTDBM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 7.5 V Peak Pulse Current I CM 12 A Continuous Collector Current (a)(f) IC 4.5 A Continuous Collector Current (b)(f) IC 5 A Base Current IB 1000 mA Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 9 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 24 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R θJA 83.3 °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t