BD540C-S

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD539 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25°C Case Temperature 5 A Continuous Collector Current Customer-Specified Selections Available This seriesISOBSOLETEAND not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD540 Collector-base voltage (IE = 0) BD540A V CBO BD540C BD540 Collector-emitter voltage (IB = 0) (see Note 1) Emitter-base voltage Continuous collector current BD540A BD540B BD540C UNIT -40 E T E L O S B O BD540B VALUE V CEO VEBO IC -60 -80 V -100 -40 -60 -80 -100 V -5 V -5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 45 W Operating free air temperature range TA -65 to +150 °C Tstg -65 to +150 Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds Ptot Tj TL 2 -65 to +150 260 W °C °C °C NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 4) BD540 -40 BD540A -60 BD540B -80 BD540C -100 TYP MAX V VCE = -40 V VBE = 0 BD540 -0.2 Collector-emitter VCE = -60 V VBE = 0 BD540A -0.2 cut-off current VCE = -80 V VBE = 0 BD540B -0.2 VCE = -100 V VBE = 0 BD540C -0.2 Collector cut-off VCE = -30 V IB = 0 BD540/540A -0.3 current VCE = -60 V IB = 0 BD540B/540C -0.3 VEB = -5 V IC = 0 VCE = -4 V IC = -0.5 A VCE = -4 V IC = -1 A VCE = -4 V IC = -3 A IB = -125 mA IC = - 1A IB = -375 mA IC = -3 A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio -1 -1 A IC = - 5A VCE = -4 V IC = -3 A mA mA mA 40 (see Notes 4 and 5) 30 12 -0.25 (see Notes 4 and 5) -0.8 E T E L O S B O IB = UNIT (see Notes 4 and 5) VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 V -1.5 -1.25 V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 2.78 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -1 A IB(on) = -0.1 A IB(off) = 0.1 A toff Turn-off time VBE(off) = 4.3 V RL = 30 Ω tp = 20 µs, dc ≤ 2% 0.3 µs 1 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = -4 V tp = 300 µs, duty cycle < 2% VCE(sat) - Collector-Emitter Saturation Voltage - V TCS632AH 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT TC = 25°C TC = 80°C 100 10 -0·01 -0·1 TCS632AB -10 -1·0 -0·1 IC = IC = IC = IC = -100 mA -300 mA -1 A -3 A E T E L O S B O -1·0 -10 -0·01 -0·1 IC - Collector Current - A -1·0 -10 -100 -1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1 TCS632AC VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25°C -0·9 -0·8 -0·7 -0·6 -0·5 -0·01 -0·1 -1 -10 IC - Collector Current - A Figure 3.
  
 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS632AE -1·0 -0·1 BD540 BD540A BD540B BD540C E T E L O S B O -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AC Ptot - Maximum Power Dissipation - W 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5.
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 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.