CDNBS08-T36

PL Features ■ ■ ■ ■ ■ Applications ■ ■ ■ ■ IA NT Lead free as standard RoHS compliant* Protects 4 lines Unidirectional & bidirectional configurations ESD protection > 40 KV Audio/video inputs RS-232, RS-422 & RS-423 data lines Portable electronics Medical sensors *R oH S CO M CDNBS08-T03~T36C – TVS Diode Array Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD protection applications, in 8 lead narrow body SOIC package size format. The Transient Voltage Suppressor Array series offer a choice of voltage types ranging from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Operating Temperature Storage Temperature Symbol TJ TSTG Max. -55 to +150 -55 to +150 Unit °C °C 1 2 3 4 8 7 6 5 1 8 2 7 3 6 4 5 Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) CDNBS08Parameter Symbol UniBiUniBiUniBiUniBiUniBiUniBiUniBiT03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C Unit Breakdown Voltage @ 1 mA Working Peak Voltage Maximum Clamping Voltage VC @ IP1 Maximum Clamping Voltage @ 8/20 µs VC @ IPP1 Maximum Leakage Current @ VWM Maximum Cap Unidirectional @ 0 V, 1 MHz VBR VWM VF VF ID C j(SD) C j(SD) PPP VF 3.3 3.0 4.0 10.9 V @ 43 A 125 800 450 6.0 5.0 9.8 13.5 V @ 42 A 20 550 308 8.5 8.0 13.4 16.9 V @ 34 A 10 500 300 13.3 12.0 19.0 25.9 V @ 27 A 1 185 105 500 1.5 16.7 15.0 24.0 30.0 V @ 17 A 1 140 80 26.7 24.0 43.0 49.0 V @ 12 A 1 88 50 40.0 36.0 51.0 76.8 V @9A 1 80 45 V V V V µA pF pF W V Maximum Cap Bidirectional @ 0 V, 1 MHz Peak Pulse Power (tp = 8/20 µs)2 Forward Voltage @ 100 mA, 300 µs – Square Wave3 Notes: 1. See Pulse Wave Form. 2. See Peak Pulse Power vs. Pulse Time. 3. Only applies to unidirectional devices. 4. Part numbers with a “C” suffix are bidirectional devices, i.e. CDNBS08-T03C. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDNBS08-T03~T36C – TVS Diode Array Series Product Dimensions This is a molded JEDEC narrow body SO-8 package with lead free 100 % Sn plating on the lead frame. It weighs approximately 15 mg and has a flammability rating of UL 94V-0. A Recommended Footprint A B F H G D C B C E Dimensions D DIMENSIONS = MILLIMETERS (INCHES) A B 1.143 - 1.397 (0.045 - 0.055) 0.635 - 0.889 (0.025 - 0.035) 6.223 Min. (0.245) 3.937 - 4.191 (0.155 - 0.165) 1.016 - 1.27 (0.040 - 0.050) E C Dimensions A B C D E F G H 4.80 - 5.00 (0.189 - 0.196) 3.80 - 4.00 (0.150 - 0.157) 5.80 - 6.20 (0.229 - 0.244) 1.35 - 1.75 (0.054 - 0.068) 0.10 - 0.25 (0.004 - 0.008) 0.25 - 0.50 (0.010 - 0.019) 0.40 - 1.250 (0.016 - 0.049) 0.18 - 0.25 (0.007 - 0.009) D E How To Order CD NBS08 - T 03 C Common Code Chip Diode Package • NBS08 = Narrow Body SOIC8 Package Model T = Transient Voltage Supressor Working Peak Voltage 3 = 3 VRWM (Volts) Suffix C = Bidirectional Diode *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDNBS08-T03~T36C – TVS Diode Array Series Performance Graphs Peak Pulse Power vs Pulse Time 10,000 IPP – Peak Pulse Current (% of IPP) PPP – Peak Pulse Power (kW) Pulse Wave Form 120 100 80 60 40 20 0 td = t|IPP/2 tt Test Waveform Parameters tt = 8 µs td = 20 µs et 1,000 500 W, 8/20 µs Waveform 100 10 0.01 1 10 100 1,000 10,000 0 5 10 15 t – Time (µs) 20 25 30 td – Pulse Duration (µs) Block Diagram Unidirectional 8 7 6 5 Power Derating Curve Bidirectional 8 7 6 5 100 80 60 40 20 Peak Pulse Power 8/20 µs % of Rated Power 1 2 3 4 1 2 3 4 Average Power 0 0 25 50 75 100 125 150 Device Pinout Pin 1 2 3 4 5 6 7 8 Function I/O 1 I/O 2 I/O 3 I/O 4 GND GND GND GND TL – Lead Temperature (°C) *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDNBS08-T03~T36C – TVS Diode Array Series Packaging The surface mount product is packaged in a 12 mm x 8 mm Tape and Reel format per EIA-481 standard. TOP SIDE VIEW (INTO COMPONENT POCKET) DIMENSIONS = 0.3 ± 0.05 (.01 ± .002) 2.0 ± 0.05 (.08 ± .002) 4.0 ± 0.1 (.16 ± .004) 1.5 ± 0.1/-0 (.06 ± .004/-0) DIA. 1.75 ± 0.1 (.07 ± .004) MILLIMETERS (INCHES) R 0.3 MAX. (0.01) 12.0 ± 0.3 (.47 ± .01) 5.5 ± 0.3 (.22 ± .01) 9.0 ± 0.1 (.354 ± .004) 8.0 ± 0.3 (.31 ± .01) R 0.25 TYP. (0.010) 2.1 ± 0.1 (.083 ± .004) 6.4 ± 0.1 (.252 ± .004) ORIENTATION OF COMPONENT IN POCKET BACKSIDE FACING UP Reliable Electronic Solutions Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. COPYRIGHT© 2005, BOURNS, INC. LITHO IN U.S.A., IPA0501 04/05