bq24313
bq24315
www.ti.com............................................................................................................................................... SLUS817A – MARCH 2008 – REVISED NOVEMBER 2008
OVERVOLTAGE AND OVERCURRENT PROTECTION IC AND
Li+ CHARGER FRONT-END PROTECTION IC
FEATURES
1
• Provides Protection for Three Variables:
– Input Overvoltage, with Rapid Response in
< 1 µs
– User-Programmable Overcurrent with
Current Limiting
– Battery Overvoltage
• 30V Maximum Input Voltage
• Supports up to 1.5A Input Current
• Robust Against False Triggering Due to
Current Transients
• Thermal Shutdown
• Enable Input
• Status Indication – Fault Condition
23
•
•
5.5V LDO Mode Voltage Regulation
Available in Space-Saving Small 8 Lead 2mm
×2mm SON
APPLICATIONS
•
•
•
•
•
Mobile Phones and Smart Phones
PDAs
MP3 Players
Low-Power Handheld Devices
Bluetooth™ Headsets
DESCRIPTION
The bq24313 and bq24315 are highly integrated circuits designed to provide protection to Li-ion batteries from
failures of the charging circuit. The IC continuously monitors the input voltage, the input current, and the battery
voltage. The output acts as a linear regulator. The output is regulated to VO(REG) for inputs between VO(REG) and
the overvoltage threshold. If an input overvoltage condition occurs, the IC immediately removes power from the
charging circuit by turning off an internal switch. In the case of an overcurrent condition, it limits the system
current at the threshold value, and if the overcurrent persists, switches the pass element OFF after a blanking
period. Additionally, the IC also monitors its own die temperature and switches off if it exceeds 140°C. The input
overcurrent threshold is user-programmable.
The IC can be controlled by a processor and also provides status information about fault conditions to the host.
APPLICATION SCHEMATIC
AC Adapter
1 IN
VDC
OUT 8
1 mF
1 mF
GND
bq24080
Charger IC
bq24313
bq24315
SYSTEM
VBAT 6
VSS
ILIM
FAULT 4
2
7
CE 5
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
Bluetooth is a trademark of Bluetooth SIG, Inc.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated
bq24313
bq24315
SLUS817A – MARCH 2008 – REVISED NOVEMBER 2008............................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION (1)
DEVICE (2)
(1)
(2)
OVP THRESHOLD
PACKAGE
MARKING
bq24313DSG
10.5V
2mm x 2mm SON
NXQ
bq24315DSG
5.85 V
2mm x 2mm SON
CGM
For the most current package and ordering information, see the Package Option Addendum at the end
of this document, or see the TI website at www.ti.com.
To order a 3000 piece reel add R to the part number, or to order a 250 piece reel add T to the part
number.
PACKAGE DISSIPATION RATINGS
DESIGNATOR
PACKAGE
RθJC
RθJA
DSG
2×2 SON
5°C/W
75°C/W
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
PIN
VALUE
IN (with respect to VSS)
–0.3 to 30
OUT (with respect to VSS)
–0.3 to 12
ILIM, FAULT, CE, VBAT (with respect to VSS)
–0.3 to 7
UNIT
VI
Input voltage
II
Input current
IN
2
A
IO
Output current
OUT
2
A
Output sink current
FAULT
ESD
Withstand Voltage
V
15
mA
All (Human Body Model per JESD22-A114-E)
2000
V
All (Machine Model per JESD22-A115-E)
200
V
All (Charge Device Model per JESD22-C101-C)
500
V
IN(IEC 61000-4-2) (with IN bypassed to the VSS
with a 1-µF low-ESR ceramic capacitor)
15 (Air Discharge)
8 (Contact)
kV
TJ
Junction temperature
–40 to 150
°C
Tstg
Storage temperature
–65 to 150
°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
3.3
30
V
Input current, IN pin
1.5
A
IOUT
Output current, OUT pin
1.5
A
R(ILIM)
OCP Programming resistor
15
90
kΩ
TJ
Junction temperature
–40
125
°C
VIN
Input voltage range
IIN
2
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UNIT
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ELECTRICAL CHARACTERISTICS
over junction temperature range –40°C to 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IN
UVLO
Undervoltage lock-out, input power
detected threshold
CE = Low, VIN increasing from 0V to 3V
2.6
2.7
2.8
V
Vhys(UVLO)
Hysteresis on UVLO
CE = Low, VIN decreasing from 3V to 0V
200
260
300
mV
tDGL(PGOOD)
Deglitch time, input power detected
status
CE = Low. Time measured from VIN 0V → 5V 1µs
rise-time, to output turning ON
IDD
Operating current
CE = Low, No load on OUT pin,
VIN = 5V, R(ILIM) = 25kΩ
ISTDBY
Standby current
CE = High, VIN = 5V
8
ms
400
600
µA
65
95
µA
170
280
mV
V
INPUT TO OUTPUT CHARACTERISTICS
VDO
Drop-out voltage IN to OUT
CE = Low, VIN = 5V, IOUT = 1A
OUPUT VOLTAGE REGULATION
VO(REG)
Output voltage
CE = Low, VIN = 6.5V, IOUT = bq24313
1A
5.67
5.85
6.03
CE = Low, VIN = 5.7V, IOUT = bq24315
1A
5.3
5.5
5.7
bq24313
10.2
10.5
10.8
bq24315
5.71
5.85
6.00
bq24313
60
120
180
bq24315
20
60
110
INPUT OVERVOLTAGE PROTECTION
VOVP
Input overvoltage protection threshold
CE = Low, VIN increasing
from 5V to 11V
tPD(OVP)
Input OV propagation delay (1)
CE = Low
Hysteresis on OVP
CE = Low, VIN decreasing
from 11V to 5V
Vhys(OVP)
tON(OVP)
Recovery time from input overvoltage
condition
200
CE = Low, Time measured from
VIN 7.5V → 5V, 1µs fall-time
V
ns
8
mV
ms
INPUT OVERCURRENT PROTECTION
IOCP
Input overcurrent protection threshold
range
IOCP
Input overcurrent protection threshold
K(ILIM)
300
CE = Low, R(ILIM) = 24.9kΩ,
3 V ≤ VIN < VOVP – Vhys(OVP)
900
Adjustable current limit factor
tBLANK(OCP)
Blanking time, input overcurrent
detected
tREC(OCP)
Recovery time from input overcurrent
condition
1000
1500
mA
1100
mA
25
A＝
kΩ
176
µs
64
ms
BATTERY OVERVOLTAGE PROTECTION
BVOVP
Battery overvoltage protection
threshold
CE = Low, VIN > 4.4V
4.30
4.35
4.4
V
Vhys(Bovp)
Hysteresis on BVOVP
CE = Low, VIN > 4.4V
200
275
320
mV
I(VBAT)
Input bias current on VBAT pin
V(VBAT) = 4.4V, TJ = 25°C
10
nA
tDGL(Bovp)
Deglitch time, battery overvoltage
detected
CE = Low, VIN > 4.4V. Time measured from V(VBAT)
rising from 4.1V to 4.4V to FAULT going low.
µs
176
THERMAL PROTECTION
TJ(OFF)
Thermal shutdown temperature
TJ(OFF-HYS)
Thermal shutdown hysteresis
140
150
20
°C
°C
LOGIC LEVELS ON CE
VIL
Low-level input voltage
VIH
High-level input voltage
IIL
Low-level input current
(1)
0
0.4
V
1
µA
1.4
V(/CE) = 0V
V
Not tested in production. Specified by design.
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SLUS817A – MARCH 2008 – REVISED NOVEMBER 2008............................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
over junction temperature range –40°C to 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
IIH
High-level input current
TEST CONDITIONS
MIN
TYP
MAX
V(/CE) = 1.8V
15
UNIT
µA
LOGIC LEVELS ON FAULT
VOL
Output low voltage
ISINK = 5mA
0.2
V
Ilkg
Leakage current, FAULT pin HI-Z
V(/FAULT) = 5V
10
µA
4
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Q1
IN
OUT
Charge Pump
Bandgap
Bias Gen
VBG
VISNS
ILIM
VBG
Current limiting
loop
ILIMREF
VO(REG)
Loop
OFF
FAULT
OCP Comparator
ILIMREF - Δ
VISNS
tBLANK(OCP)
VIN
VBG
COUNTERS,
CONTROL,
AND STATUS
OVP
CE
tDGL(PGOOD)
VBAT
VIN
VBG
VBG
UVLO
THERMAL
SHUTDOWN
tDGL(BOVP)
VSS
Figure 1. Simplified Block Diagram
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TERMINAL FUNCTIONS
TERMINAL
NAME
DSG
I/O
DESCRIPTION
IN
1
I
Input power. Connect IN to the external DC supply. Bypass IN to VSS with a 1µF ceramic capacitor
(minimum).
VSS
2
–
Ground terminal
NC
3
FAULT
4
O
5
I
Chip enable active low input. Connect CE = High to disable the IC and turn the input FET off. Connect
CE = low for normal operation. CE is internally pulled down.
VBAT
6
I
Battery voltage sense input. Connect to the battery pack positive terminal through a resistor.
ILIM
7
I/O
8
O
CE
OUT
Thermal PAD
This pin may have internal circuits used for test purposes. Do not make any external connection to this
pin for normal operation.
–
Open-drain, device status output. FAULT = Low indicates that the input FET Q1 is off due to input
overvoltage, input overcurrent, battery overvoltage, or thermal shutdown. FAULT is high impedance
during normal operation. Connect a pullup resistor from FAULT to the desired logic level voltage rail.
Input overcurrent threshold programming. Connect a resistor from ILIM to VSS to set the overcurrent
threshold.
Output terminal to the charging system. Connect OUT to the external load circuitry. Bypass OUT to VSS
with a 1µF ceramic capacitor (minimum).
There is an internal electrical connection between the exposed thermal pad and the VSS pin of the
device. The thermal pad must be connected to the same potential as the VSS pin on the printed circuit
board. Do not use the thermal pad as the primary ground input for the device. The VSS pin must be
connected to ground at all times.
DSG Package
(Top View)
IN 1
8
OUT
7
ILIM
NC 3
6
VBAT
FAULT 4
5
CE
VSS 2
bq24313
bq24315
6
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TYPICAL OPERATING PERFORMANCE
Test conditions (unless otherwise noted) for typical operating performance: VIN = 5 V, CIN = 1 µF, COUT = 1 µF,
R(ILIM) = 25 kΩ, RBAT = 100 kΩ, TA = 25°C, VPU = 3.3V (see Figure 22 for the Typical Application Circuit)
NORMAL POWER-ON SHOWING SOFT-START
OVP AT POWER-ON
VIN = 0 V to 9 V,
tr = 50 ms
ROUT = 6.6 W
VIN
2 V/div
5 V/div
2 V/div
VIN
200 mV/div
VOUT
200 mA/div
VOUT
200 mA/div
IIN
IIN
t - Time - 2 ms/div
t - Time - 2 ms/div
Figure 2.
Figure 3.
OVP RESPONSE FOR INPUT STEP
OVP RESPONSE FOR INPUT STEP
VIN = 5 V to 12 V step
VIN = 5 V to 12 V,
tr = 20 ms
5 V/div
5 V/div
VIN
2 V/div
VOUT
VIN
2 V/div
VOUT
t - Time - 10 ms/div
t - Time - 20 ms/div
Figure 4.
Figure 5.
RECOVERY FROM OVP
OCP, POWERING UP INTO A SHORT CIRCUIT ON
OUT,COUNTER COUNTS TO 15 BEFORE SWITCHING OFF
THE DEVICE
VIN = 7.5 V to 5 V,
tr = 1.2 ms
2 V/div
5 V/div
VIN
VIN
1 V/div
VOUT
500 mA/div
IIN
2 V/div
1 V/div
VOUT
VFAULT
t - Time - 200 ms/div
t - Time - 4 ms/div
Figure 6.
Figure 7.
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TYPICAL OPERATING PERFORMANCE (continued)
ROUT SWITCHES FROM 6.6Ω TO 3.3Ω,SHOWS CURRENT
LIMITING AND SOFT-STOP
OCP, ZOOM-IN ON THE FIRST CYCLE OF FIGURE 7
2 V/div
VOUT
2 V/div
VIN
IIN
500 mA/div
500 mA/div
IIN
VFAULT
VOUT
1 V/div
1 V/div
t - Time - 40 ms/div
t - Time - 2 ms/div
Figure 8.
Figure 9.
BAT-OVP, V(VBAT) STEPS FROM 4 V TO 4.5 V,SHOWS
tDGL(BAT-OVP) AND SOFT STOP
BAT-OVP, V(VBAT) CYCLES BETWEEN 4 V AND 4.5
V,SHOWS BAT-OVP COUNTER
VOUT
2 V/div
1 V/div
VBAT
2 V/div
1 V/div
VFAULT
2 V/div
VOUT
VBAT
200 mA/div
VFAULT
t - Time - 100 ms/div
t - Time - 4 ms/div
Figure 10.
Figure 11.
INPUT VOLTAGE RAMP-UP / RAMP-DOWN
bq24313
UNDERVOLTAGE LOCKOUT
vs
FREE-AIR TEMPERATURE
2.75
2.7
VIN Increasing
VIN
2.65
VUVLO, VHYS-UVLO - V
2 V/div
2 V/div
VOUT
2.6
2.55
2.5
VIN Decreasing
2.45
t - Time - 40 ms/div
2.4
-50
-30
Figure 12.
8
-10
10
30
50
70
Temperature - °C
90
110
130
Figure 13.
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TYPICAL OPERATING PERFORMANCE (continued)
OVERVOLTAGE PROTECTION THRESHOLD
vs
FREE-AIR TEMPERATURE
bq24313
DROPOUT VOLTAGE (IN to OUT)
vs
FREE-AIR TEMPERATURE
280
10.55
260
VIN Increasing
10.5
240
VIN = 4 V
200
VOVP, VHYS-OVP - V
VDO @ 1A - mV
220
VIN = 5 V
180
160
10.45
10.4
VIN Decreasing
140
10.35
120
10.3
-50
100
0
50
100
150
-30
-10
10
Temperature - °C
30
50
Temperature °C
70
90
110
Figure 14.
Figure 15.
OVERVOLTAGE THRESHOLD PROTECTION
vs
FREE-AIR TEMPERATURE
bq24315
INPUT OVERCURRENT PROTECTION
vs
ILIM RESISTANCE
5.88
130
1600
1400
5.86
5.84
1000
VIN Increasing
IOCP - mA
VOVP, VHYS-OVP - V
1200
5.82
800
600
400
5.8
VIN Decreasing
5.78
-50
-30
-10
10
30
50
70
90
200
110
130
0
0
10
Temperature - °C
Figure 16.
20
30
40
50
60
RILIM - kW
70
80
90
100
Figure 17.
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TYPICAL OPERATING PERFORMANCE (continued)
INPUT OVERCURRENT PROTECTION
vs
FREE-AIR TEMPERATURE
BATTERY OVERVOLTAGE PROTECTION
vs
FREE-AIR TEMPERATURE
4.4
985
984
4.35
BVOVP (VVBAT Increasing)
983
4.3
981
BVOVP - V
IOCP - mA
982
980
4.25
4.2
979
4.15
978
977
4.1
Bat-OVP Recovery (VVBAT Decreasing)
976
975
-50
-30
-10
10
30
50
70
Temperature - °C
90
110
4.05
-50
130
-30
-10
10
30
50
70
Temperature - °C
Figure 18.
Figure 19.
LEAKAGE CURRENT (VBAT Pin)
vs
FREE-AIR TEMPERATURE
SUPPLY CURRENT
vs
INPUT VOLTAGE
2.5
90
110
130
900
800
2
IDD, ISTDBY - mA
1.5
IVBAT - nA
IDD (CE = Low)
700
1
600
500
400
300
200
0.5
ISTDBY (CE = High)
100
0
-50
-30
-10
10
30
50
70
Temperature - °C
90
110
130
0
0
5
15
20
25
30
35
VIN - V
Figure 20.
10
10
Figure 21.
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TYPICAL APPLICATION CIRCUIT
VOVP = 5.85V, IOCP = 1000mA, BVOVP = 4.35V
AC Adapter
VDC
1
IN
OUT 8
CIN
GND
COUT
1 mF
1 mF
bq24080
Charger IC
bq24313
bq24315
RBAT
SYSTEM
VBAT 6
100 kW
VPU
RPU
47 kW
47 kW
FAULT 4
RFAULT
ILIM
VSS
47 kW
7
2
CE 5
Host
Controller
RCE
RILM
Figure 22.
DETAILED FUNCTIONAL DESCRIPTION
The bq24313 and bq24315 are integrated circuits designed to provide protection to Li-ion batteries from failures
of the charging circuit. The IC continuously monitors the input voltage, the input current and the battery voltage.
For an input overvoltage condition, the IC immediately removes power from the charging circuit by turning off an
internal switch. For an overcurrent condition, it limits the system current at the threshold value, and if the
overcurrent persists, switches the pass element OFF after a blanking period. If the battery voltage rises to an
unsafe level, the IC disconnects power from the charging circuit until the battery voltage returns to an acceptable
value. Additionally, the IC also monitors its own die temperature and switches off if it exceeds 140°C. The input
overcurrent threshold is user-programmable. The IC can be controlled by a processor, and also provides status
information about fault conditions to the host.
POWER DOWN
The device remains in power down mode when the input voltage at the IN pin is below the undervoltage
threshold UVLO. The FET Q1 connected between IN and OUT pins is off, and the status output, FAULT, is set to
Hi-Z.
POWER-ON RESET
The device resets when the input voltage at the IN pin exceeds the UVLO threshold. All internal counters and
other circuit blocks are reset. The IC then waits for duration tDGL(PGOOD) for the input voltage to stabilize. If, after
tDGL(PGOOD), the input voltage and battery voltage are safe, FET Q1 is turned ON. The IC has a soft-start feature
to control the inrush current. The soft-start minimizes the ringing at the input (the ringing occurs because the
parasitic inductance of the adapter cable and the input bypass capacitor form a resonant circuit). Because of the
deglitch time at power-on, if the input voltage rises rapidly to beyond the OVP threshold, the device will not
switch on at all, instead it will go into protection mode and indicate a fault on the FAULT pin.
OPERATION
The device continuously monitors the input voltage, the input current, and the battery voltage as described in
detail in the following sections.
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Input Overvoltage Protection
While the input voltage is less than VO(REG), the output voltage tracks the input voltage (less the drop due to the
RDS(on) of Q1). When the input voltage is between VO(REG) and VOVP, the device functions as a linear regulator
and regulates the output voltage to 5.5V. If the input voltage rises above VOVP, the internal FET Q1 is turned off,
removing power to the output. The response is rapid, with the FET turning off in less than a microsecond. The
FAULT pin is driven low. When the input voltage returns below VOVP – Vhys(OVP) (but is still above UVLO), the
FET Q1 is turned on again after a deglitch time of tON(OVP) to ensure that the input supply has stabilized.
Input Overcurrent Protection
The overcurrent threshold is programmed by a resistor R(ILIM) connected from the ILIM pin to VSS. Figure 17
shows the OCP threshold as a function of R(ILIM), and may be approximated by the following equation:
IOCP = 25 ÷ R(ILIM) (current in A, resistance in kΩ)
If the load current tries to exceed the IOCP threshold, the device limits the current for a blanking duration of
tBLANK(OCP). If the load current returns to less than IOCP before tBLANK(OCP) times out, the device continues to
operate. However, if the overcurrent situation persists for tBLANK(OCP), the FET Q1 is turned off for a duration of
tREC(OCP), and the FAULT pin is driven low. The FET is then turned on again after tREC(OCP) and the current is
monitored all over again. Each time an OCP fault occurs, an internal counter is incremented. If 15 OCP faults
occur in one charge cycle, the FET is turned off permanently. The counter is cleared either by removing and
re-applying input power, or by disabling and re-enabling the device with the CE pin.
To prevent the input voltage from spiking up due to the inductance of the input cable, Q1 is turned off slowly,
resulting in a “soft-stop”.
Battery Overvoltage Protection
The battery overvoltage threshold BVOVP is internally set to 4.35V. If the battery voltage exceeds the BVOVP
threshold, the FET Q1 is turned off, and the FAULT pin is driven low. The FET is turned back on once the battery
voltage drops to BVOVP – Vhys(Bovp). Each time a battery overvoltage fault occurs, an internal counter is
incremented. If 15 such faults occur in one charge cycle, the FET is turned off permanently. The counter is
cleared either by removing and re-applying input power, or by disabling and re-enabling the device with the CE
pin. For a battery overvoltage fault, Q1 is gradually switched OFF.
Thermal Protection
If the junction temperature of the device exceeds TJ(OFF), the FET Q1 is turned off, and the FAULT pin is driven
low. The FET is turned back on when the junction temperature falls below TJ(OFF) – TJ(OFF-HYS).
Enable Function
The IC has an enable pin which can be used to enable or disable the device. When the CE pin is driven high, the
internal FET is turned off. When the CE pin is low, the FET is turned on if other conditions are safe. The OCP
counter and the Bat-OVP counter are both reset when the device is disabled and re-enabled. The CE pin has an
internal pulldown resistor and can be left floating. Note that the FAULT pin functionality is also disabled when the
CE pin is high.
Fault Indication
The FAULT pin is an active-low open-drain output. It is in a high-impedance state when operating conditions are
safe, or when the device is disabled by setting CE high. With CE low, the FAULT pin goes low whenever any of
these events occurs:
• Input overvoltage
• Input overcurrent
• Battery overvoltage
• IC Overtemperature
12
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Product Folder Link(s): bq24313 bq24315
bq24313
bq24315
www.ti.com............................................................................................................................................... SLUS817A – MARCH 2008 – REVISED NOVEMBER 2008
Power Down
All IC functions OFF
FAULT = HiZ
Any State
if V(IN) < V (UVLO),
go to Power Down
No
V(IN) > V(UVLO) ?
Any State
if CE = Hi,
go to Reset
Yes
Reset
Timers reset
Counters reset
FAULT = HiZ
FET off
No
CE = Low ?
V(IN) < V(OVP) ?
No
Turn off FET
FAULT = Low
No
CE = Hi ?
Yes
Go to Reset
Yes
No
I < IOCP ?
No
Turn off FET
FAULT = Low
Incr OCP counter
Wait tREC(OCP)
count UVLO – Vhys(UVLO) + RDS(on) × I(ACCESSORY). Within this voltage
range, the reverse current capability is the same as the forward capability, 1.5A. It should be noted that there is
no overcurrent protection in this direction.
PCB Layout Guidelines:
•
•
•
This device is a protection device, and is meant to protect down-stream circuitry from hazardous voltages.
Potentially, high voltages may be applied to this IC. It has to be ensured that the edge-to-edge clearances of
PCB traces satisfy the design rules for high voltages.
The device uses SON packages with a PowerPAD™. For good thermal performance, the PowerPAD should
be thermally coupled with the PCB ground plane. In most applications, this will require a copper pad directly
under the IC. This copper pad should be connected to the ground plane with an array of thermal vias.
CIN and COUT should be located close to the IC. Other components like R(ILIM) and RBAT should also be
located close to the IC.
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Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): bq24313 bq24315
15
PACKAGE OPTION ADDENDUM
www.ti.com
29-Apr-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
BQ24313DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green NIPDAU | NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
NXQ
BQ24313DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green NIPDAU | NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
NXQ
BQ24315DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green NIPDAU | NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
CGM
BQ24315DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green NIPDAU | NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
CGM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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