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CDCV304
SCAS643I – SEPTEMBER 2000 – REVISED OCTOBER 2017
CDCV304 200-MHz General-Purpose Clock Buffer, PCI-X Compliant
1 Features
2 Description
•
•
The CDCV304 is a high-performance, low-skew,
general-purpose PCI-X compliant clock buffer. It
distributes one input clock signal (CLKIN) to the
output clocks (1Y[0:3]). It is specifically designed for
use with PCI-X applications. The CDCV304 operates
at 3.3 V and 2.5 V and is therefore compliant to the
3.3-V PCI-X specifications.
1
•
•
•
•
•
•
General-Purpose and PCI-X 1:4 Clock Buffer
Operating Frequency
– 0 MHz to 200 MHz General-Purpose
Low Output Skew: VDD)
–50
50
mA
Output clamp current, IOK (VO < 0 or VO > VDD)
–50
50
mA
Continuous total output current, IO (VO = 0 to VDD)
–50
50
mA
230.5
°C/W
125
°C
150
°C
Package thermal impedance, θJA: PW package
Junction temperature, Tj, max
Storage temperature range Tstg
(1)
(2)
(3)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 4.6 V maximum.
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5.2 Recommended Operating Conditions
MIN
Supply voltage, VDD
NOM
MAX
2.3
Low-level input voltage, VIL
High-level input voltage, VIH
V
0.3 x VDD
V
0.7 x VDD
Input voltage, VI
V
0
High-level output current, IOH
Low-level output current, IOL
VDD
VDD = 2.5 V
–12
VDD = 3.3 V
–24
VDD = 2.5 V
12
VDD = 3.3 V
24
Operating free-air temperature, TA
UNIT
3.6
–40
85
V
mA
mA
°C
5.3 Thermal Information
CDCV304
THERMAL AIR
FLOW (CFM)
THERMAL METRIC (1)
PW (TSSOP)
UNIT
8 PINS
High K
RθJA
Junction-to-ambient thermal resistance
0
149
150
142
250
138
500
132
230
185
Low K
°C/W
170
150
RθJC(top)
Junction-to-case (top) thermal resistance
43.7
RθJB
Junction-to-board thermal resistance
102
ψJT
Junction-to-top characterization parameter
ψJB
Junction-to-board characterization parameter
(1)
1.8
100.2
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
5.4 Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
VIK
VOH
VOL
Input voltage
High-level output voltage
Low-level output voltage
IOH
High-level output current
IOL
Low-level output current
(1)
4
TEST CONDITIONS
MIN
TYP (1)
MAX
UNIT
–1.2
V
VDD = 3 V,
II = –18 mA
VDD = 2.3 V,
IOH = –8 mA
1.8
VDD = 2.3 V,
IOH = –16 mA
1.5
VDD = min to max,
IOH = –1 mA
VDD = 3 V,
IOH = –24 mA
2
VDD = 3 V,
IOH = –12 mA
2.4
VDD = 2.3 V,
IOL = 8 mA
0.5
VDD = 2.3 V,
IOL = 16 mA
0.7
VDD = min to max,
IOL = 1 mA
0.2
VDD = 3 V,
IOL = 24 mA
0.8
VDD = 3 V,
IOL = 12 mA
VDD = 3 V,
VO = 1 V
VDD = 3.3 V,
VO = 1.65 V
VDD = 3 V,
VO = 2 V
VDD = 3.3 V,
VO = 1.65 V
VDD – 0.2
V
V
0.55
–50
–55
60
70
mA
mA
All typical values are with respect to nominal VDD and TA = 25°C.
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SCAS643I – SEPTEMBER 2000 – REVISED OCTOBER 2017
Electrical Characteristics (continued)
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
II
Input current
TEST CONDITIONS
MIN
TYP (1)
MAX
VI = VO or VDD
UNIT
±5
f = 67 MHz,
VDD = 2.7 V
28
f = 67 MHz,
VDD = 3.6 V
37
μA
IDD
Dynamic current, see Figure 1
mA
CI
Input capacitance
VDD = 3.3 V,
VI = 0 V or VDD
3
pF
CO
Output capacitance
VDD = 3.3 V,
VI = 0 V or VDD
3.2
pF
5.5 Timing Requirements
over operating free-air temperature range (unless otherwise noted)
PARAMETER
fclk
TEST CONDITIONS
MIN
Clock frequency
TYP
0
MAX
UNIT
200
MHz
5.6 Switching Characteristics: VDD = 2.5 V ± 10%
VDD = 2.5 V ± 10%, CL= 10 pF (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP (1)
MAX
2
2.9
4.5
2
3
4.5
UNIT
tPLH
Low-to-high propagation delay
tPHL
High-to-low propagation delay
tsk(o)
Output skew (2)
50
150
tr
Output rise slew rate
1.5
2.2
4
V/ns
tf
Output fall slew rate
1.5
2.2
4
V/ns
MIN
TYP (1)
MAX
UNIT
1.8
2.4
3
1.8
2.5
3
50
100
(1)
(2)
See Figure 4 and Figure 5
See Figure 6
ns
ps
All typical values are with respect to nominal VDD.
The tsk(o) specification is only valid for equal loading of all outputs.
5.7 Switching Characteristics: VDD = 3.3 V ± 10%
VDD = 3.3 V ± 10%, CL= 10 pF (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tPLH
Low-to-high propagation delay
tPHL
High-to-low propagation delay
tsk(o)
Output skew (2)
tjitter
Additive phase jitter from input to output 1Y0
tsk(p)
Pulse skew
tsk(pr)
Process skew
tsk(pp)
Part-to-part skew
Clock high time, see Figure 7
tlow
Clock low time, see Figure 7
tr
Output rise slew rate (3)
(1)
(2)
(3)
Output fall slew rate
12 kHz to 5 MHz, fout = 30.72 MHz
63
12 kHz to 20 MHz, fout = 125 MHz
56
VIH = VDD, VIL = 0 V
thigh
tf
See Figure 4 and Figure 5
(3)
66 MHz
6
140 MHz
3
66 MHz
6
140 MHz
3
ns
ps
fs rms
150
ps
0.2
0.3
ns
0.25
0.4
ns
ns
ns
VO = 0.4 V to 2 V
1.5
2.7
4
V/ns
VO = 2 V to 0.4 V
1.5
2.7
4
V/ns
All typical values are with respect to nominal VDD.
The tsk(o) specification is only valid for equal loading of all outputs.
This symbol is according to PCI-X terminology.
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5.8 Typical Characteristics
60
3.5
VOH − High-Level Output Voltage − V
ICC − Supply Current − mA
TA = 85°C
Output Load: as in Figure 1
50
VDD = 3.6V
40
VDD = 2.7V
30
20
0
20
40
60
80
100
120
140
160
VDD = 3.3 V
TA = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−100
−90
−80
f − Frequency − MHz
−70
−60
−50
−40
−30
−20
−10
0
IOH − High-Level Output Current − mA
Figure 1. Supply Current vs Frequency
Figure 2. High-Level Output Voltage vs High-Level Output
Current
VOL − Low-Level Output Voltage − V
3.5
3.0
VDD = 3.3 V
TA = 25°C
2.5
2.0
1.5
1.0
0.5
0.0
−20
0
20
40
60
80
100
120
IOL − Low-Level Output Current − mA
Figure 3. Low-Level Output Voltage vs Low-Level Output Current
6
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SCAS643I – SEPTEMBER 2000 – REVISED OCTOBER 2017
6 Parameter Measurement Information
VDD
140 Ω
Yn
10 pF
140 Ω
Figure 4. Test Load Circuit
VDD
50% VDD
CLKIN
0V
tPLH
tPHL
0.6 VDD
0.6 VDD
50% VDD
50% VDD
0.2 VDD
1Y0 − 1Y3
VOH
0.2 VDD
tr
VOL
tf
Figure 5. Voltage Waveforms Propagation Delay (tpd) Measurements
50% VDD
Any Y
50% VDD
Any Y
tsk(0)
Figure 6. Output Skew
tcyc
PARAMETER
VIH(Min)
VIL(Max)
Vtest
VALUE
0.5 VDD
thigh
UNIT
V
0.35 VDD
V
VIH(Min)
0.4 VDD
V
Vtest
0.6 VDD
VIL(Max)
tlow
0.2 VDD
0.4 VDD
Peak to Peak (Minimum)
A.
All parameters in Figure 7 are according to PCI-X 1.0 specifications.
Figure 7. Clock Waveform
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7 Detailed Description
7.1 Functional Block Diagram
OE
CLKIN
Logic
Control
2
3
1
1Y0
5
1Y1
7
1Y2
8
1Y3
7.2 Device Functional Modes
Table 1. Function Table
INPUTS
8
OUTPUTS
CLKIN
OE
1Y[0:3]
L
L
L
H
L
L
L
H
L
H
H
H
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SCAS643I – SEPTEMBER 2000 – REVISED OCTOBER 2017
8 Device and Documentation Support
8.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
8.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
8.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
8.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
8.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
9 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CDCV304PW
ACTIVE
TSSOP
PW
8
150
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
CKV304
CDCV304PWG4
ACTIVE
TSSOP
PW
8
150
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
CKV304
CDCV304PWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
CKV304
CDCV304PWRG4
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
CKV304
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of