CSD16323Q3C
www.ti.com
SLPS248 – AUGUST 2010
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16323Q3C
PRODUCT SUMMARY
FEATURES
1
•
•
•
•
•
•
•
•
•
2
DualCool™ Package
Optimized for 5V Gate Drive
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package
VDS
Drain to Source Voltage
25
V
Qg
Gate Charge Total (4.5V)
6.2
nC
Qgd
Gate Charge Gate to Drain
RDS(on)
1.1
Drain to Source On Resistance
Vth
nC
VGS = 3V
5.4
mΩ
VGS = 4.5V
4.4
mΩ
VGS = 8V
3.8
mΩ
Threshold Voltage
1.1
V
ORDERING INFORMATION
Device
Package
Media
CSD16323Q3C
SON 3.3-mm × 3.3-mm
Plastic Package
13-Inch
Reel
Qty
Ship
2500
Tape and
Reel
APPLICATIONS
•
•
Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control or Synchronous FET
Applications
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
VDS
Drain to Source Voltage
25
V
VGS
Gate to Source Voltage
+10 / –8
V
Continuous Drain Current, TC = 25°C
60
A
Continuous Drain Current(1)
21
A
IDM
Pulsed Drain Current, TA = 25°C(2)
112
A
PD
Power Dissipation(1)
3
W
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
EAS
Avalanche Energy, single pulse
ID = 50A, L = 0.1mH, RG = 25Ω
125
mJ
ID
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion and optimized
for 5V gate drive applications. Added
For
Spacing
Text
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Text
Added
For
Spacing
(1) Typical RqJA = 43°C/W when mounted on a 1-inch2
(6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch
(1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2% Text Added For
Spacing
Text
Added
For
Spacing
RDS(ON) vs VGS
GATE CHARGE
10
ID = 24A
14
12
10
TC = 125°C
8
ID = 24A
VDS = 12.5V
9
VG − Gate Voltage − V
RDS(on) − On-State Resistance − mW
16
6
4
8
7
6
5
4
3
2
2
TC = 25°C
1
0
0
0
1
2
3
4
5
6
7
8
VGS − Gate to Source Voltage − V
9
10
G006
0
2
4
6
8
10
12
14
Qg − Gate Charge − nC
G003
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DualCool, NexFET are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
CSD16323Q3C
SLPS248 – AUGUST 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 20V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +10/-8V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250mA
RDS(on)
gfs
Drain to Source On Resistance
Transconductance
25
0.9
V
1
mA
100
nA
1.1
1.4
V
VGS = 3V, ID = 24A
5.4
7.2
mΩ
VGS = 4.5V, ID = 24A
4.4
5.5
mΩ
VGS = 8V, ID = 24A
3.8
4.5
mΩ
VDS = 12.5V, ID = 24A
108
S
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
1020
1300
pF
740
960
CRSS
pF
Reverse Transfer Capacitance
50
65
pF
Rg
Series Gate Resistance
1.4
2.8
Ω
Qg
Gate Charge Total (4.5V)
6.2
8.4
nC
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
VGS = 0V, VDS = 12.5V, f = 1MHz
VDS = 12.5V, ID = 24A
VDS = 12.5V, VGS = 0V
VDS = 12.5V, VGS = 4.5V ID = 24A
RG = 2Ω
1.1
nC
1.8
nC
1
nC
14
nC
5.3
ns
15
ns
13
ns
6.3
ns
Diode Characteristics
VSD
Diode Forward Voltage
IS = 24A, VGS = 0V
Qrr
Reverse Recovery Charge
VDD = 12.5V, IF = 24A, di/dt = 300A/ms
0.85
21
1
nC
V
trr
Reverse Recovery Time
VDD = 12.5V, IF = 24A, di/dt = 300A/ms
16
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
qJC(top)
qJC(bot)
Junction-to-case (bottom) thermal resistance
q JA
Junction to Ambient thermal resistance
(1)
(2)
2
MIN
Junction-to-case (top) thermal resistance
(1)
(1) (2)
2
TYP
MAX
UNIT
3.5
°C/W
2.7
°C/W
58
°C/W
2
RqJC is determined with the device mounted on a 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design.
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
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Product Folder Link(s): CSD16323Q3C
CSD16323Q3C
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SLPS248 – AUGUST 2010
GATE
GATE
Source
Source
Max RqJA = 58°C/W
when mounted on 1
inch2 (6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Max RqJA = 162°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0161-02
M0161-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
ZqJA – NormalizedThermal Impedance
10
1
0.5
0.3
0.1
Duty Cycle = t1/t2
0.1
0.05
0.01
P
0.02
0.01
t1
t2
Typical RqJA = 138°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1k
tP – Pulse Duration–s
G012
Figure 1. Transient Thermal Impedance
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CSD16323Q3C
SLPS248 – AUGUST 2010
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TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
60
60
50
VGS = 4.5V
40
ID − Drain Current − A
50
ID − Drain Current − A
VDS = 5V
VGS = 8V
VGS = 2V
VGS = 3.5V
30
20
VGS = 2.5V
10
40
TC = 125°C
30
TC = 25°C
20
TC = −55°C
10
0
0.0
0
0.5
1.0
1.5
1
2.0
VDS − Drain to Source Voltage − V
1.25
1.75
2
2.25
2.5
VGS − Gate to Source Voltage − V
G001
Figure 2. Saturation Characteristics
G002
Figure 3. Transfer Characteristics
10
2.5
f = 1MHz
VGS = 0V
ID = 24A
VDS = 12.5V
9
8
C − Capacitance − nF
VG − Gate Voltage − V
1.5
7
6
5
4
3
2.0
CISS = CGD + CGS
1.5
COSS = CGD + CGS
1.0
CRSS = CGD
0.5
2
1
0
0.0
0
2
4
6
8
10
12
14
Qg − Gate Charge − nC
0
5
G003
Figure 4. Gate Charge
RDS(on) − On-State Resistance − mW
VGS(th) − Threshold Voltage − V
20
25
G004
16
ID = 250mA
1.2
1.0
0.8
0.6
0.4
0.2
ID = 24A
14
12
10
TC = 125°C
8
6
4
2
TC = 25°C
0
−25
25
75
125
175
TC − Case Temperature − °C
0
1
2
3
4
5
6
7
8
VGS − Gate to Source Voltage − V
G005
Figure 6. Threshold Voltage vs. Temperature
4
15
Figure 5. Capacitance
1.4
0.0
−75
10
VDS − Drain to Source Voltage − V
9
10
G006
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
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SLPS248 – AUGUST 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
1.4
100
ID = 24A
VGS = 10V
ISD − Source to Drain Current − A
Normalized On-State Resistance
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−75
10
1
TC = 125°C
0.1
TC = 25°C
0.01
0.001
0.0001
−25
25
75
125
175
TC − Case Temperature − °C
0.0
0.2
1.0
G008
1k
I(AV) − Peak Avalanche Current − A
ID − Drain Current − A
0.8
Figure 9. Typical Diode Forward Voltage
1k
100
100ms
10
1ms
Area Limited
by RDS(on)
10ms
100ms
0.1
0.01
0.01
0.6
VSD − Source to Drain Voltage − V
G007
Figure 8. Normalized On-State Resistance vs. Temperature
1
0.4
Single Pulse
RqJA = 138°C/W (min Cu)
0.1
DC
1
10
TC = 125°C
10
1
0.01
100
VDS − Drain To Source Voltage − V
TC = 25°C
100
0.1
1
10
t(AV) − Time in Avalanche − ms
G009
Figure 10. Maximum Safe Operating Area
100
G010
Figure 11. Single Pulse Unclamped Inductive Switching
80
ID − Drain Current − A
70
60
50
40
30
20
10
0
−50
−25
0
25
50
75
100
125
TC − Case Temperature − °C
150
175
G011
Figure 12. Maximum Drain Current vs. Temperature
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CSD16323Q3C
SLPS248 – AUGUST 2010
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MECHANICAL DATA
Q3C Package Dimensions
D
N
D2
H
7
2
M
3
4
6
5
M1
5
3
4
6
Pin 9
b
E2
7
2
Exposed
Heat Slug
L
8
8
1
q
e
E
c1
1
N1
q
L1
A1
Top View
Bottom View
Side View
Pinout
Label
Source
A
c
Pin #
1, 2, 3, 9
4
Gate
5, 6, 7, 8
Drain
Front View
M0198-01
DIM
MILLIMETERS
NOM
MAX
MIN
NOM
MAX
A
0.950
1.000
1.100
0.037
0.039
0.043
A1
0.000
0.000
0.050
0.000
0.000
0.002
b
0.280
0.340
0.400
0.011
0.013
0.016
c
0.150
0.200
0.250
0.006
0.008
0.010
c1
0.150
0.200
0.250
0.006
0.008
0.010
D
3.200
3.300
3.400
0.126
0.130
0.134
D2
1.650
1.750
1.800
0.065
0.069
0.071
E
3.200
3.300
3.400
0.126
0.130
0.134
E2
2.350
2.450
2.550
0.093
0.096
0.100
e
6
INCHES
MIN
0.650 TYP
0.026
H
0.35
0.450
0.550
0.014
0.018
0.022
L
0.35
0.450
0.550
0.014
0.018
0.022
L1
–
–
–
–
–
–
M
1.561
1.661
1.761
0.061
0.065
0.069
M1
1.130
1.230
1.330
0.044
0.048
0.052
N
1.854
1.954
2.054
0.073
0.077
0.081
N1
0.846
0.946
1.046
0.033
0.037
0.041
q
–
–
–
–
–
–
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CSD16323Q3C
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SLPS248 – AUGUST 2010
2.31
1
8
8
1
0.65 Typ.
2.45
5
4
5
3.50
0.56
0.41
4
0.50 Typ.
Recommended PCB Pattern
0.63
M0143-01
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
1.75 ±0.10
Text Added For Spacing
Text Added For Spacing
Q3 Tape and Reel Information
4.00 ±0.10 (See Note 1)
2.00 ±0.05
Ø 1.50
+0.10
–0.00
1.30
3.60
5.50 ±0.05
12.00
+0.30
–0.10
8.00 ±0.10
3.60
M0144-01
NOTES: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm, unless otherwise specified.
5. Thickness: 0.30 ±0.05mm
6. MSL1 260°C (IR and convection) PbF reflow compatible
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PACKAGE OPTION ADDENDUM
www.ti.com
17-Nov-2018
PACKAGING INFORMATION
Orderable Device
Status
(1)
CSD16323Q3C
NRND
Package Type Package Pins Package
Drawing
Qty
VSON-CLIP
DQV
8
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
TBD
Call TI
Call TI
Op Temp (°C)
Device Marking
(4/5)
0 to 0
A323C
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of