CSD17312Q5
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SLPS256A – MARCH 2010 – REVISED OCTOBER 2010
30V N-Channel NexFET™ Power MOSFET
Check for Samples: CSD17312Q5
PRODUCT SUMMARY
FEATURES
1
•
•
•
•
•
•
•
•
2
Optimized for 5V Gate Drive
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
8
V
Gate Charge Total (4.5V)
28
nC
Qgd
Gate Charge Gate to Drain
Drain to Source On Resistance
6
nC
VGS = 3V
1.8
mΩ
VGS = 4.5V
1.4
mΩ
VGS = 8V
1.2
mΩ
Threshold Voltage
1.1
V
ORDERING INFORMATION
DESCRIPTION
1
30
Qg
VGS(th)
Notebook Point-of-Load
Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
S
Drain to Source Voltage
RDS(on)
APPLICATIONS
•
•
VDS
Device
Package
Media
CSD17312Q5
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
Qty
Ship
2500
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
VDS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
+10 / –8
V
Continuous Drain Current, TC = 25°C
100
A
Continuous Drain Current(1)
38
A
IDM
Pulsed Drain Current, TA = 25°C(2)
200
A
PD
Power Dissipation(1)
3.2
W
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
EAS
Avalanche Energy, Single Pulse
ID = 130A, L = 0.1mH, RG = 25Ω
845
mJ
ID
D
S
2
7
D
S
3
6
D
G
4
5
D
(1) Typical RqJA = 39°C/W when mounted on a 1-inch2
(6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch
(1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2% TextAddedForSpacing
Text_added_for_spacing_Text_added_for_spacing
D
P0094-01
RDS(on) vs VGS
GATE CHARGE
8
ID = 35A
3.5
VGS - Gate-to-Source Voltage - V
RDS(on) - On-State Resistance - mΩ
4
3
T C = 125°C
2.5
2
1.5
1
T C = 25°C
0.5
ID = 35A
VDS = 15V
7
6
5
4
3
2
1
0
0
0
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage - V
9
10
G006
0
10
20
30
Qg - Gate Charge - nC
40
50
G003
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
CSD17312Q5
SLPS256A – MARCH 2010 – REVISED OCTOBER 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 24V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +10/–8V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250mA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
30
0.9
V
1
mA
100
nA
1.1
1.5
V
VGS = 3V, ID = 35A
1.8
2.4
mΩ
VGS = 4.5V, ID = 35A
1.4
1.7
mΩ
VGS = 8V, ID = 35A
1.2
1.5
mΩ
VDS = 15V, ID = 35A
200
S
Dynamic Characteristics
Ciss
Input Capacitance
VGS = 0V, VDS = 15V,
f = 1MHz
4030 5240
pF
2220 2890
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
93
120
pF
RG
Series Gate Resistance
1.1
2.2
Ω
Qg
Gate Charge Total (4.5V)
28
36
nC
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
Qoss
Output Charge
td(on)
6
nC
8.4
nC
4.4
nC
57
nC
Turn On Delay Time
9.5
ns
tr
Rise Time
27
ns
td(off)
Turn Off Delay Time
35
ns
tf
Fall Time
23
ns
VDS = 15V,
IDS = 35A
VDS = 14.8V, VGS = 0V
VDS = 15V, VGS = 4.5V,
IDS = 35A, RG = 2Ω
Diode Characteristics
VSD
Diode Forward Voltage
ISD = 35A, VGS = 0V
0.8
Qrr
Reverse Recovery Charge
88
nC
trr
Reverse Recovery Time
VDD = 14.8V, IF = 35A,
di/dt = 300A/ms
1
V
43
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
RqJC
Thermal Resistance Junction to Case (1)
RqJA
Thermal Resistance Junction to Ambient (1) (2)
(1)
(2)
2
MIN
TYP
MAX
UNIT
1
°C/W
49
°C/W
RqJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design.
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
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SLPS256A – MARCH 2010 – REVISED OCTOBER 2010
GATE
GATE
Source
N-Chan 5x6 QFN TTA MIN Rev3
N-Chan 5x6 QFN TTA MAX Rev3
Max RqJA = 49°C/W
when mounted on
1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Source
Max RqJA = 119°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0137-02
M0137-01
Text Added For Spacing
Text Added For Spacing
Text Added For Spacing
Text Added For Spacing
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
ZqJA - Normalized Thermal Impedance
10
1
0.5
0.3
0.1
Duty Cycle = t1/t2
0.1
0.05
P
0.02
0.01
t1
0.01
t2
Typical RqJA = 95°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
Single Pulse
0.001
0.001
0.01
0.1
1
tp - Pulse Duration - s
10
100
1k
G012
Figure 1. Transient Thermal Impedance
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SLPS256A – MARCH 2010 – REVISED OCTOBER 2010
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TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
100
90
VGS = 2.5V
IDS - Drain-to-Source Current - A
IDS - Drain-to-Source Current - A
100
80
VGS = 3V
70
60
VGS = 3.5V
50
40
VGS = 4.5V
30
VGS = 8V
20
0
0.1
0.2
0.3
0.4
VDS - Drain-to-Source Voltage - V
T C = 125°C
60
50
T C = 25°C
40
T C = -55°C
30
20
0
0.5
0.5
G001
1
1.5
2
VGS - Gate-to-Source Voltage - V
2.5
3
G002
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
12
8
ID = 35A
VDS = 15V
7
f = 1MHz
VGS = 0V
10
6
C - Capacitance - nF
VGS - Gate-to-Source Voltage - V
70
0
0
5
4
3
2
8
Coss = Cds + Cgd
6
Ciss = Cgd + Cgsgs
4
Crss = CGgd
2
1
0
0
0
10
20
30
Qg - Gate Charge - nC
40
50
0
10
15
20
VDS - Drain-to-Source Voltage - V
25
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
30
G004
4
RDS(on) - On-State Resistance - mΩ
ID = 250µA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-75
5
G003
1.6
VGS(th) - Threshold Voltage - V
80
10
10
ID = 35A
3.5
3
T C = 125°C
2.5
2
1.5
1
T C = 25°C
0.5
0
-25
25
75
T C - Case Temperature - °C
125
175
0
1
G005
Figure 6. Threshold Voltage vs. Temperature
4
VDS = 5V
90
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage - V
9
10
G006
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
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Product Folder Link(s): CSD17312Q5
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SLPS256A – MARCH 2010 – REVISED OCTOBER 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
100
ID = 35A
VGS = 8V
1.6
ISD - Source-to-Drain Current - A
Normalized On-State Resistance
1.8
1.4
1.2
1
0.8
0.6
0.4
0.2
-75
1
T C = 125°C
0.1
T C = 25°C
0.01
0.001
0.0001
-25
25
75
T C - Case Temperature - °C
125
0
175
0.2
G007
0.4
0.6
0.8
VSD - Source-to-Drain Voltage - V
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
100
1ms
10
10ms
11110
100ms
1
Area Limited
by RDS(on)
0.1
0.01
0.01
1
G008
1k
I(AV) - Peak Avalanche Current - A
1k
IDS - Drain-to-Source Current - A
10
1s
Single Pulse
Typical R θJA = 95°C/W (min Cu)
DC
0.1
1
10
VDS - Drain-to-Source Voltage - V
100
10
T C = 125°C
1
0.01
G009
Figure 10. Maximum Safe Operating Area
T C = 25°C
100
0.1
1
10
t(AV) - Time in Avalanche - ms
100
G010
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
IDS - Drain-to-Source Current - A
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100 125
T C - Case Temperature - °C
150
175
G011
Figure 12. Maximum Drain Current vs. Temperature
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CSD17312Q5
SLPS256A – MARCH 2010 – REVISED OCTOBER 2010
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MECHANICAL DATA
Q5 Package Dimensions
K
L
L
c1
E1
E2
b
D2
4
4
5
5
e
3
6
3
6
E
D1
7
7
2
2
8
8
1
1
q
Top View
Bottom View
Side View
c
E1
A
q
Front View
M0140-01
DIM
MILLIMETERS
MAX
MIN
MAX
A
0.950
1.050
0.037
0.039
b
0.360
0.460
0.014
0.018
c
0.150
0.250
0.006
0.010
c1
0.150
0.250
0.006
0.010
D1
4.900
5.100
0.193
0.201
D2
4.320
4.520
0.170
0.178
E
4.900
5.100
0.193
0.201
E1
5.900
6.100
0.232
0.240
E2
3.920
4.12
0.154
e
6
INCHES
MIN
1.27 TYP
K
0.760
L
0.510
q
0.00
0.162
0.050
0.030
0.710
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0.020
0.028
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17312Q5
CSD17312Q5
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SLPS256A – MARCH 2010 – REVISED OCTOBER 2010
Recommended PCB Pattern
F1
F7
DIM
F3
8
1
F2
F11
F5
F9
5
4
F6
F8
F4
F10
M0139-01
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
F1
6.205
6.305
0.244
0.248
F2
4.460
4.560
0.176
0.180
F3
4.460
4.560
0.176
0.180
F4
0.650
0.700
0.026
0.028
F5
0.620
0.670
0.024
0.026
F6
0.630
0.680
0.025
0.027
F7
0.700
0.800
0.028
0.031
F8
0.650
0.700
0.026
0.028
F9
0.620
0.670
0.024
0.026
F10
4.900
5.000
0.193
0.197
F11
4.460
4.560
0.176
0.180
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
K0
4.00 ±0.10 (See Note 1)
0.30 ±0.05
2.00 ±0.05
+0.10
–0.00
12.00 ±0.30
Ø 1.50
1.75 ±0.10
Text added for spacing
Text added for spacing
Q5 Tape and Reel Information
5.50 ±0.05
B0
R 0.30 MAX
A0
8.00 ±0.10
Ø 1.50 MIN
A0 = 6.50 ±0.10
B0 = 5.30 ±0.10
K0 = 1.40 ±0.10
R 0.30 TYP
M0138-01
Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm, unless otherwise specified.
5. Thickness: 0.30 ±0.05mm
6. MSL1 260°C (IR and convection) PbF reflow compatible
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SLPS256A – MARCH 2010 – REVISED OCTOBER 2010
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REVISION HISTORY
Changes from Original (March 2010) to Revision A
•
8
Page
Deleted the Package Marking Information section ............................................................................................................... 7
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD17312Q5
ACTIVE
VSON-CLIP
DQH
8
2500
RoHS-Exempt
& Green
SN
Level-1-260C-UNLIM
-55 to 150
CSD17312
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of