CSD17559Q5T

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents CSD17559Q5 SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014 CSD17559Q5 30-V N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • • 1 Product Summary Extremely Low Resistance Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5 mm × 6 mm Plastic Package TA = 25°C • • UNIT Drain-to-Source Voltage 30 V Qg Gate Charge Total (4.5 V) 39 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 9.3 nC VGS = 4.5 V 1.15 mΩ VGS = 10 V 0.95 mΩ 1.4 V Ordering Information(1) Device Qty Media Package Ship CSD17559Q5 2500 13-Inch Reel CSD17559Q5T 250 13-Inch Reel SON 5 × 6 mm Plastic Package Tape and Reel 2 Applications • TYPICAL VALUE VDS Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems Synchronous Rectification Active ORing and Hotswap Applications (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings 3 Description TA = 25°C VALUE UNIT This 30 V, 0.95 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited), TC = 25°C 257 ID Continuous Drain Current(1) 40 A Pulsed Drain Current(2) 400 A Power Dissipation(1) 3.2 Power Dissipation, TC = 25°C 96 TJ, Tstg Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 104 A, L = 0.1m H, RG = 25 Ω 541 mJ Top View IDM S 8 1 D PD S S 7 2 3 D 6 D 5 D A W D G 4 (1) Typical RθJA = 40°C/W on 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB. (2) Max RθJC = 1.2°C/W, pulse duration ≤100 μs, duty cycle ≤1% P0093-01 RDS(on) vs VGS Gate Charge 10 TC = 25°C Id = 40A TC = 125ºC Id = 40A 5 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 6 4 3 2 1 0 0 2 4 6 8 10 VGS - Gate-to- Source Voltage (V) 12 G001 ID = 40A VDS =15V 8 6 4 2 0 0 10 20 30 40 50 60 Qg - Gate Charge (nC) 70 80 90 G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD17559Q5 SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 Trademarks ............................................................... 7 6.2 Electrostatic Discharge Caution ................................ 7 6.3 Glossary .................................................................... 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 Q5 Package Dimensions .......................................... 8 7.2 Q5 Tape and Reel Information.................................. 9 4 Revision History Changes from Original (Novermber 2012) to Revision A Page • ................................................................................................................................................................................................ 1 • Added small reel information ................................................................................................................................................. 1 • Increased max pulsed drain current to 400 A ....................................................................................................................... 1 • Added line for max power dissipation with case temperature held to 25º.............................................................................. 1 • Updated max pulsed current conditions ................................................................................................................................ 1 • Updated Figure 1 to a normalized RθJC curve ....................................................................................................................... 4 • Updated the SOA in Figure 10 .............................................................................................................................................. 6 2 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD17559Q5 CSD17559Q5 www.ti.com SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = 250 μA IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 24 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = 250 μA RDS(on) Drain-to-Source On-Resistance gƒs Transconductance 30 1.2 V 1.4 1.7 V VGS = 4.5 V, IDS = 40 A 1.15 1.5 mΩ VGS = 10 V, IDS = 40 A 0.95 1.15 mΩ VDS = 15 V, IDS = 40 A 235 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance 7070 9200 pF 1780 2314 pF Crss RG Reverse Transfer Capacitance 87 113 pF Series Gate Resistance 1.2 2.4 Ω Qg Gate Charge Total (4.5 V) 39 51 nC Qgd Gate Charge Gate-to-Drain Qgs Gate Charge Gate-to-Source Qg(th) Gate Charge at Vth Qoss Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tƒ Fall Time VGS = 0 V, VDS = 15 V, ƒ = 1 MHz VDS = 15 V, IDS = 40 A VDS = 15 V, VGS = 0 V VDS = 15 V, VGS = 4.5 V, IDS = 40 A, RG = 2 Ω 9.3 nC 14.4 nC 8.3 nC 50 nC 20 ns 41 ns 32 ns 14 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 40 A, VGS = 0 V Qrr Reverse Recovery Charge trr Reverse Recovery Time 0.8 VDD= 15 V, IF = 40 A, di/dt = 300 A/μs 1 V 80 nC 37 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX RθJC Junction-to-Case Thermal Resistance (1) 1.2 RθJA Junction-to-Ambient Thermal Resistance (1) (2) 50 (1) (2) UNIT °C/W RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inches × 1.5 inches (3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu. Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD17559Q5 3 CSD17559Q5 SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014 GATE www.ti.com GATE Source N-Chan 5x6 QFN TTA MIN Rev3 N-Chan 5x6 QFN TTA MAX Rev3 Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. Source Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. DRAIN DRAIN M0137-02 M0137-01 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance 4 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD17559Q5 CSD17559Q5 www.ti.com SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014 Typical MOSFET Characteristics (continued) 180 200 160 180 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) (TA = 25°C unless otherwise stated) 140 120 100 80 60 40 VGS =10V VGS =6V VGS =4.5V 20 0 0 0.1 0.2 0.3 VDS - Drain-to-Source Voltage (V) 160 140 120 100 80 60 TC = 125°C TC = 25°C TC = −55°C 40 20 0 0.4 VDS = 5V 0 Figure 2. Saturation Characteristics 5 G001 100000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd ID = 40A VDS =15V C − Capacitance (pF) 8 6 4 10000 1000 100 2 0 0 10 20 30 40 50 60 Qg - Gate Charge (nC) 70 80 10 90 0 10 20 VDS - Drain-to-Source Voltage (V) G001 Figure 4. Gate Charge 30 G001 Figure 5. Capacitance 2 6 RDS(on) - On-State Resistance (mΩ) ID = 250uA VGS(th) - Threshold Voltage (V) 2 3 4 VGS - Gate-to-Source Voltage (V) Figure 3. Transfer Characteristics 10 VGS - Gate-to-Source Voltage (V) 1 G001 1.8 1.6 1.4 1.2 1 0.8 0.6 −75 −25 25 75 125 TC - Case Temperature (ºC) Figure 6. Threshold Voltage vs Temperature 175 TC = 25°C Id = 40A TC = 125ºC Id = 40A 5 4 3 2 1 0 0 G001 2 4 6 8 10 VGS - Gate-to- Source Voltage (V) 12 G001 Figure 7. On-State Resistance vs Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD17559Q5 5 CSD17559Q5 SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 1.8 100 VGS = 4.5V VGS = 10V ID =40A ISD − Source-to-Drain Current (A) Normalized On-State Resistance 2 1.6 1.4 1.2 1 0.8 0.6 0.4 −75 −25 25 75 125 TC - Case Temperature (ºC) 175 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) G001 Figure 8. Normalized On-State Resistance vs Temperature 10us 100us 1ms 10ms DC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 300 100 10 1 Single Pulse Max RthetaJC = 1.2ºC/W 0.1 0.1 G001 Figure 9. Typical Diode Forward Voltage 5000 1000 1 1 10 VDS - Drain-to-Source Voltage (V) 100 TC = 25ºC TC = 125ºC 100 10 0.01 0.1 1 TAV - Time in Avalanche (mS) G001 Figure 10. Safety Operating Area 10 G001 Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain- to- Source Current (A) 300.0 Silicon limited Package limited 250.0 200.0 150.0 100.0 50.0 0.0 −50 −25 0 25 50 75 100 125 TC - Case Temperature (ºC) 150 175 G001 Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD17559Q5 CSD17559Q5 www.ti.com SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014 6 Device and Documentation Support 6.1 Trademarks NexFET is a trademark of Texas Instruments. 6.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD17559Q5 7 CSD17559Q5 SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 Q5 Package Dimensions K L L c1 E1 E2 b D2 4 4 5 5 e 3 6 3 6 E D1 7 7 2 2 8 8 1 1 q Top View Bottom View Side View c E1 A q Front View M0140-01 DIM MILLIMETERS MAX MIN MAX A 0.950 1.050 0.037 0.039 b 0.360 0.460 0.014 0.018 c 0.150 0.250 0.006 0.010 c1 0.150 0.250 0.006 0.010 D1 4.900 5.100 0.193 0.201 D2 4.320 4.520 0.170 0.178 E 4.900 5.100 0.193 0.201 E1 5.900 6.100 0.232 0.240 E2 3.920 4.12 0.154 e 8 INCHES MIN 1.27 TYP 0.162 0.050 K 0.760 0.030 L 0.510 0.710 0.020 0.028 θ 0.00 — — — Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD17559Q5 CSD17559Q5 www.ti.com SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014 F1 F7 8 1 F3 F11 F5 F9 5 4 F6 F2 MILLIMETERS DIM Recommended PCB Pattern INCHES MIN MAX MIN MAX F1 6.205 6.305 0.244 0.248 F2 4.460 4.560 0.176 0.180 F3 4.460 4.560 0.176 0.180 F4 0.650 0.700 0.026 0.028 F5 0.620 0.670 0.024 0.026 F6 0.630 0.680 0.025 0.027 F7 0.700 0.800 0.028 0.031 F8 0.650 0.700 0.026 0.028 F9 0.620 0.670 0.024 0.026 F10 4.900 5.000 0.193 0.197 F11 4.460 4.560 0.176 0.180 F8 F4 F10 M0139-01 K0 4.00 ±0.10 (See Note 1) 0.30 ±0.05 2.00 ±0.05 +0.10 –0.00 12.00 ±0.30 Ø 1.50 1.75 ±0.10 7.2 Q5 Tape and Reel Information 5.50 ±0.05 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 R 0.30 TYP M0138-01 Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm, unless otherwise specified. 5. Thickness: 0.30 ±0.05 mm 6. MSL1 260°C (IR and convection) PbF-reflow compatible. Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: CSD17559Q5 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD17559Q5 ACTIVE VSON-CLIP DQH 8 2500 RoHS-Exempt & Green SN Level-1-260C-UNLIM -55 to 150 CSD17559 CSD17559Q5T ACTIVE VSON-CLIP DQH 8 250 RoHS-Exempt & Green SN Level-1-260C-UNLIM -55 to 150 CSD17559 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of