Order
Now
Product
Folder
Support &
Community
Tools &
Software
Technical
Documents
Reference
Design
CSD18512Q5B
SLPS624A – DECEMBER 2016 – REVISED MARCH 2019
CSD18512Q5B 40 V N-channel NexFET™ power MOSFET
1 Features
•
•
•
•
•
•
•
•
1
Product Summary
Low RDS(ON)
Low thermal resistance
Avalanche rated
Logic level
Pb-free terminal plating
RoHS compliant
Halogen-free
SON 5 mm × 6 mm plastic package
TA = 25°C
VDS
Drain to source voltage
Qg
Gate charge total (10 V)
Qgd
Gate charge gate to drain
RDS(on)
Drain to source on resistance
VGS(th)
Threshold voltage
DC-DC conversion
Secondary side synchronous rectifier
Motor control
DEVICE
QTY
MEDIA
2500
13-Inch Reel
CSD18512Q5BT
250
7-Inch Reel
nC
VGS = 4.5 V
1.8
mΩ
VGS = 10 V
1.3
mΩ
V
PACKAGE
SHIP
SON 5 mm × 6 mm Tape and
Plastic Package
Reel
TA = 25°C
VALUE
UNIT
VDS
Drain to source voltage
40
V
VGS
Gate to source voltage
±20
V
Continuous drain current (package limited)
100
Continuous drain current (silicon limited),
TC = 25°C
211
ID
8
1
(1)
D
IDM
7
2
D
PD
3
4
Continuous drain current
32
Pulsed drain current(2)
400
Power dissipation(1)
3.1
Power dissipation, TC = 25°C
139
6
D
TJ,
Tstg
Operating Junction,
Storage Temperature
5
D
EAS
Avalanche energy, single pulse
ID = 64 A, L = 0.1 mH, RG = 25 Ω
D
G
nC
Absolute Maximum Ratings
Top View
S
75
13.3
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
S
V
1.6
CSD18512Q5B
3 Description
S
UNIT
40
Ordering Information(1)
2 Applications
•
•
•
TYPICAL VALUE
A
A
W
–55 to 150
°C
205
mJ
P0093-01
(1) Typical RθJA = 40°C/W on a 1 inch2 , 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
(2) Max RθJC = 0.9°C/W, pulse duration ≤100 μs, duty cycle ≤1%
RDS(on) vs VGS
Gate Charge
10
TC = 25°C, I D = 30 A
TC = 125°C, I D = 30 A
7
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-State Resistance (m:)
8
6
5
4
3
2
1
0
ID = 30 A, VDS = 20 V
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
18
20
D007
0
10
20
30
40
50
Qg - Gate Charge (nC)
60
70
80
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD18512Q5B
SLPS624A – DECEMBER 2016 – REVISED MARCH 2019
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Device and Documentation Support.................... 7
6.1
6.2
6.3
6.4
7
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
7
7
7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1
7.2
7.3
7.4
Q5B Package Dimensions ........................................ 8
Recommended PCB Pattern..................................... 9
Recommended Stencil Pattern ................................. 9
Q5B Tape and Reel Information ............................. 10
4 Revision History
Changes from Original (December 2016) to Revision A
•
2
Page
Corrected the SOA in Figure 10 ............................................................................................................................................ 5
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: CSD18512Q5B
CSD18512Q5B
www.ti.com
SLPS624A – DECEMBER 2016 – REVISED MARCH 2019
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain to source voltage
VGS = 0 V, ID = 250 μA
IDSS
Drain to source leakage current
VGS = 0 V, VDS = 32 V
1
μA
IGSS
Gate to source leakage current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate to source threshold voltage
VDS = VGS, ID = 250 μA
RDS(on)
Drain to source on resistance
gfs
Transconductance
40
1.3
V
1.6
2.2
V
VGS = 4.5 V, ID = 30 A
1.8
2.3
mΩ
VGS = 10 V, ID = 30 A
1.3
1.6
mΩ
VDS = 20 V, ID = 30 A
136
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
Coss
Output capacitance
5480
7120
pF
537
699
pF
Crss
RG
Reverse transfer capacitance
256
333
pF
Series gate resistance
1.0
2.0
Ω
Qg
Gate charge total (4.5 V)
37
48
nC
Qg
Gate charge total (10 V)
75
98
nC
Qgd
Gate charge gate to drain
Qgs
Gate charge gate to source
Qg(th)
Gate charge at Vth
Qoss
Output charge
td(on)
Turn on delay time
tr
Rise time
td(off)
Turn off delay time
tf
Fall time
VGS = 0 V, VDS = 20 V, ƒ= 1 MHz
VDS = 20 V, ID = 30 A
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 10 V,
IDS = 30 A, RG = 0 Ω
13.3
nC
15.1
nC
8.2
nC
23
nC
7
ns
16
ns
31
ns
7
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
Qrr
Reverse recovery charge
trr
Reverse recovery time
ISD = 30 A, VGS = 0 V
0.75
VDS= 20 V, IF = 30 A,
di/dt = 300 A/μs
22
1.0
nC
V
17
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
MAX
UNIT
RθJC
Junction-to-case (top of package) thermal resistance (1)
THERMAL METRIC
0.9
°C/W
RθJA
Junction-to-ambient thermal resistance (1) (2)
50
°C/W
(1)
(2)
MIN
TYP
RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm ×
3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: CSD18512Q5B
3
CSD18512Q5B
SLPS624A – DECEMBER 2016 – REVISED MARCH 2019
GATE
www.ti.com
GATE
Source
N-Chan 5x6 QFN TTA MIN Rev3
N-Chan 5x6 QFN TTA MAX Rev3
Max RθJA = 50°C/W
when mounted on
1 inch2 (6.45 cm2) of 2
oz. (0.071 mm thick)
Cu.
Source
Max RθJA = 125°C/W
when mounted on a
minimum pad area of 2
oz. (0.071 mm thick)
Cu.
DRAIN
DRAIN
M0137-02
M0137-01
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 1. Transient Thermal Impedance
4
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: CSD18512Q5B
CSD18512Q5B
www.ti.com
SLPS624A – DECEMBER 2016 – REVISED MARCH 2019
Typical MOSFET Characteristics (continued)
200
200
180
180
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
TA = 25°C (unless otherwise stated)
160
140
120
100
80
60
40
VGS = 4.5 V
VGS = 6 V
VGS = 10 V
20
160
140
120
100
80
60
40
TC = 125°C
TC = 25°C
TC = -55°C
20
0
0
0
0.05
0.1
0.15 0.2 0.25 0.3 0.35 0.4
VDS - Drain-to-Source Voltage (V)
0.45
0.5
0
0.5
1
1.5
2
2.5
3
VGS - Gate-to-Source Voltage (V)
D002
3.5
4
D002
D003
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
10000
9
8
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
10
7
6
5
4
3
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
1000
2
1
100
0
0
10
20
30
40
50
Qg - Gate Charge (nC)
ID = 30 A
60
70
0
80
4
8
D004
Figure 4. Gate Charge
40
D005
Figure 5. Capacitance
8
RDS(on) - On-State Resistance (m:)
VGS(th) - Threshold Voltage (V)
36
VDS = 20 V
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
-75
12
16
20
24
28
32
VDS - Drain-to-Source Voltage (V)
TC = 25°C, I D = 30 A
TC = 125°C, I D = 30 A
7
6
5
4
3
2
1
0
-50
-25
0
25
50
75 100
TC - Case Temperature (°C)
125
150
175
0
2
D006
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
18
20
D007
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: CSD18512Q5B
5
CSD18512Q5B
SLPS624A – DECEMBER 2016 – REVISED MARCH 2019
www.ti.com
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
100
1.8
VGS = 4.5 V
VGS = 10 V
ISD - Source-to-Drain Current (A)
Normalized On-State Resistance
2
1.6
1.4
1.2
1
0.8
0.6
-75
TC = 25°C
TC = 125°C
10
1
0.1
0.01
0.001
0.0001
-50
-25
0
25
50
75 100
TC - Case Temperature (°C)
125
150
0
175
0.1
0.2
D008
0.3 0.4 0.5 0.6 0.7 0.8
VSD - Source-to-Drain Voltage (V)
0.9
1
D009
ID = 30 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
100
IAV - Peak Avalanche Current (A)
IDS - Drain-to-Source Current (A)
1000
100
10
1
DC
10 ms
1 ms
0.1
0.1
100 µs
10 µs
1
10
VDS - Drain-to-Source Voltage (V)
100
10
TC = 25qC
TC = 125qC
1
0.01
0.1
TAV - Time in Avalanche (ms)
D010
1
D011
Single pulse, Max RθJC= 0.9°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
IDS - Drain-to-Source Current (A)
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100 125
TC - Case Temperature (°C)
150
175
D012
Max RθJC= 0.9°C/W
Figure 12. Maximum Drain Current vs Temperature
6
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: CSD18512Q5B
CSD18512Q5B
www.ti.com
SLPS624A – DECEMBER 2016 – REVISED MARCH 2019
6 Device and Documentation Support
6.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.2 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: CSD18512Q5B
7
CSD18512Q5B
SLPS624A – DECEMBER 2016 – REVISED MARCH 2019
www.ti.com
7 Mechanical, Packaging, and Orderable Information
7.1 Q5B Package Dimensions
K
H
D3
6
D1
4
5
e
6
4
3
3
5
D2
7
2
E
2
7
ө
1
8
1
8
L
b (8x)
c1
E1
d1
Top View
d2
Bottom View
Side View
ө
Front View
DIM
MILLIMETERS
MIN
NOM
MAX
A
0.80
1.00
1.05
b
0.36
0.41
0.46
c
0.15
0.20
0.25
c1
0.15
0.20
0.25
c2
0.20
0.25
0.30
D1
4.90
5.00
5.10
D2
4.12
4.22
4.32
D3
3.90
4.00
4.10
d
0.20
0.25
0.30
d1
0.085 TYP
d2
0.319
0.369
0.419
E
4.90
5.00
5.10
E1
5.90
6.00
6.10
E2
3.48
3.58
3.68
e
H
0.36
0.46
0.56
L
0.46
0.56
0.66
L1
0.57
0.67
0.77
θ
0°
-
-
K
8
1.27 TYP
1.40 TYP
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: CSD18512Q5B
CSD18512Q5B
www.ti.com
SLPS624A – DECEMBER 2016 – REVISED MARCH 2019
7.2 Recommended PCB Pattern
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
7.3 Recommended Stencil Pattern
(0.020)
0.508
x4
(0.014)
0.350
(0.011)
0.286
(0.022)
0.562 x 4
(0.029)
0.746 x 8
2.186 (0.086)
4.318 (0.170)
0.300
(0.012)
1.270 (0.050)
(0.030)
0.766
(0.051)
1.294
x8
(0.060)
1.525
1.270 (0.050)
(0.042)
1.072
(0.259)
6.586
Recommended Stencil Opening
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: CSD18512Q5B
Submit Documentation Feedback
9
CSD18512Q5B
SLPS624A – DECEMBER 2016 – REVISED MARCH 2019
www.ti.com
K0
4.00 ±0.10 (See Note 1)
0.30 ±0.05
2.00 ±0.05
+0.10
–0.00
12.00 ±0.30
Ø 1.50
1.75 ±0.10
7.4 Q5B Tape and Reel Information
5.50 ±0.05
B0
R 0.30 MAX
A0
8.00 ±0.10
Ø 1.50 MIN
R 0.30 TYP
A0 = 6.50 ±0.10
B0 = 5.30 ±0.10
K0 = 1.40 ±0.10
M0138-01
Notes:
1. 10-sprocket hole-pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm.
3. Material: black static-dissipative polystyrene.
4. All dimensions are in mm (unless otherwise specified).
5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket.
10
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: CSD18512Q5B
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD18512Q5B
ACTIVE
VSON-CLIP
DNK
8
2500
RoHS-Exempt
& Green
NIPDAU
Level-1-260C-UNLIM
-55 to 150
CSD18512
CSD18512Q5BT
ACTIVE
VSON-CLIP
DNK
8
250
RoHS-Exempt
& Green
NIPDAU
Level-1-260C-UNLIM
-55 to 150
CSD18512
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of