CSD18533KCS

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents Reference Design CSD18533KCS SLPS362C – SEPTEMBER 2012 – REVISED JUNE 2015 CSD18533KCS 60 V N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • • 1 Product Summary Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb-Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package TA = 25°C UNIT Drain-to-source voltage 60 V Qg Gate charge total (10 V) 28 nC Qgd Gate charge gate-to-drain 3.9 RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage nC VGS = 4.5 V 6.9 mΩ VGS = 10 V 5.0 mΩ 1.9 V Ordering Information(1) 2 Applications • • • TYPICAL VALUE VDS DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control DEVICE QTY MEDIA PACKAGE SHIP CSD18533KCS 50 Tube TO-220 Plastic Package Tube (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings 3 Description TA = 25°C VALUE UNIT This 5.0 mΩ, 60 V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. VDS Drain-to-source voltage 60 V VGS Gate-to-source voltage ±20 V Continuous drain current (package limited) 100 SPACE ID Continuous drain current (silicon limited), TC = 25°C 118 Continuous drain current (silicon limited), TC = 100°C 84 IDM Pulsed drain current (1) 294 A PD Power dissipation 192 W TJ, Tstg Operating junction, Storage temperature –55 to 175 °C EAS Avalanche energy, single pulse ID = 52 A, L = 0.1 mH, RG = 25 Ω 135 mJ Drain (Pin 2) Gate (Pin 1) A (1) Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1% Source (Pin 3) . . RDS(on) vs VGS Gate Charge 10 TC = 25° C, I D = 75 A TC = 125° C, I D = 75 A 18 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (m:) 20 16 14 12 10 8 6 4 2 0 ID = 75 A VDS = 30 V 8 6 4 2 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 0 5 10 15 20 25 Qg - Gate Charge (nC) 30 35 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18533KCS SLPS362C – SEPTEMBER 2012 – REVISED JUNE 2015 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 6.2 6.3 6.4 7 Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 KCS Package Dimensions........................................ 8 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision B (April 2014) to Revision C Page • Updated Pulsed Drain Current .............................................................................................................................................. 1 • Updated pulsed current conditions ........................................................................................................................................ 1 • Updated Figure 1 ................................................................................................................................................................... 4 • Updated SOA in Figure 10 .................................................................................................................................................... 6 • Added Community Resources ............................................................................................................................................... 7 Changes from Revision A (January 2013) to Revision B Page • Updated document title to include part number .................................................................................................................... 1 • Updated part description ....................................................................................................................................................... 1 • Increased currents to reflect increase in max temperature ................................................................................................... 1 • Increased max power to reflect increase in max temperature .............................................................................................. 1 • Increased max temperature to 175°C ................................................................................................................................... 1 • Updated Figure 6 to extend to 175ºC .................................................................................................................................... 5 • Updated Figure 8 to extend to 175ºC .................................................................................................................................... 5 • Updated Figure 12 to extend to 175ºC .................................................................................................................................. 6 Changes from Original (September 2012) to Revision A • 2 Page Changed Qg(th), Gate Charge at Vth value From: 7.3 To: 4.6.................................................................................................. 3 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD18533KCS CSD18533KCS www.ti.com SLPS362C – SEPTEMBER 2012 – REVISED JUNE 2015 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA RDS(on) Drain-to-source on-resistance gfs Transconductance 60 1.5 V 1.9 2.3 V VGS = 4.5 V, ID = 75 A 6.9 9.0 mΩ VGS = 10 V, ID = 75 A 5.0 6.3 mΩ VDS = 30 V, ID = 75 A 150 S DYNAMIC CHARACTERISTICS Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance RG Series gate resistance Qg Gate charge total (4.5 V) Qg Gate charge total (10 V) Qgd Gate charge gate-to-drain Qgs Gate charge gate-to-source Qg(th) Gate charge at Vth Qoss Output charge td(on) VGS = 0 V, VDS = 30 V, ƒ = 1 MHz VDS = 30 V, ID = 75 A 2420 3025 pF 300 375 pF 7 9.1 pF 1.4 2.8 Ω 14 17 nC 28 34 nC 3.9 nC 9.4 nC 4.6 nC 31 nC Turn on delay time 5.7 ns tr Rise time 4.8 ns td(off) Turn off delay time 13 ns tf Fall time 3.2 ns VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 10 V, IDS = 75 A, RG = 0 Ω DIODE CHARACTERISTICS VSD Diode forward voltage Qrr Reverse recovery charge trr Reverse recovery time ISD = 75 A, VGS = 0 V 0.8 VDS= 30 V, IF = 75 A, di/dt = 300 A/μs 97 1 nC V 49 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) MAX UNIT RθJC Junction-to-case thermal resistance THERMAL METRIC MIN TYP 0.8 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD18533KCS 3 CSD18533KCS SLPS362C – SEPTEMBER 2012 – REVISED JUNE 2015 www.ti.com 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) 180 200 160 180 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) Figure 1. Transient Thermal Impedance 140 120 100 80 60 40 VGS = 4.5 V VGS = 6.5 V VGS = 10 V 20 TC = 125° C TC = 25° C TC = -55° C 160 140 120 100 80 60 40 20 0 0 0 0.5 1 VDS - Drain-to-Source Voltage (V) 1.5 0 D002 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 6 D003 VDS = 5 V Figure 2. Saturation Characteristics 4 Submit Documentation Feedback Figure 3. Transfer Characteristics Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD18533KCS CSD18533KCS www.ti.com SLPS362C – SEPTEMBER 2012 – REVISED JUNE 2015 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 50000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 10000 8 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 6 4 1000 100 2 10 0 0 5 10 15 20 25 Qg - Gate Charge (nC) ID = 75 A 30 0 35 10 D004 20 30 40 VDS - Drain-to-Source Voltage (V) D005 Figure 5. Capacitance 2.5 20 2.3 18 RDS(on) - On-State Resistance (m:) VGS(th) - Threshold Voltage (V) 60 VDS = 30 V Figure 4. Gate Charge 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 -75 50 TC = 25° C, I D = 75 A TC = 125° C, I D = 75 A 16 14 12 10 8 6 4 2 0 -50 -25 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature (° C) D006 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 ID = 250 µA Figure 7. On-State Resistance vs Gate-to-Source Voltage Figure 6. Threshold Voltage vs Temperature 100 2.2 VGS = 4.5 V VGS = 10 V ISD - Source-to-Drain Current (A) Normalized On-State Resistance 2.4 2 1.8 1.6 1.4 1.2 1 0.8 TC = 25° C TC = 125° C 10 1 0.1 0.01 0.001 0.6 0.4 -75 0.0001 -50 -25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (° C) D008 0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 1 D009 ID = 75 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD18533KCS 5 CSD18533KCS SLPS362C – SEPTEMBER 2012 – REVISED JUNE 2015 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 100 100 10 1 DC 10 ms 0.1 0.1 1 ms 100 µs TC = 25q C TC = 125q C IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 1000 10 µs 1 10 VDS - Drain-to-Source Voltage (V) 100 10 0.01 0.1 TAV - Time in Avalanche (ms) D010 1 D011 Single Pulse, Max RθJC = 0.8°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain-to-Source Current (A) 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 TC - Case Temperature (° C) 150 175 200 D012 Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD18533KCS CSD18533KCS www.ti.com SLPS362C – SEPTEMBER 2012 – REVISED JUNE 2015 6 Device and Documentation Support 6.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.2 Trademarks NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD18533KCS 7 CSD18533KCS SLPS362C – SEPTEMBER 2012 – REVISED JUNE 2015 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 KCS Package Dimensions Pin Configuration Position 8 Designation Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD18533KCS PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking (4/5) (6) CSD18533KCS ACTIVE TO-220 KCS 3 50 RoHS-Exempt & Green SN N / A for Pkg Type -55 to 175 CSD18533KCS (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of