CSD18540Q5B

Order Now Product Folder Support & Community Tools & Software Technical Documents CSD18540Q5B SLPS488B – JUNE 2014 – REVISED APRIL 2017 CSD18540Q5B 60-V, N-Channel NexFET™ Power MOSFETs 1 Features • • • • • • • 1 Product Summary Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 60 V Qg Gate Charge Total (10 V) 41 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage DC-DC Conversion Secondary Side Synchronous Rectifier Isolated Converter Primary Side Switch Motor Control 1.9 V QTY MEDIA PACKAGE SHIP 13-Inch Reel CSD18540Q5BT 250 7-Inch Reel SON 5.00-mm × 6.00-mm Plastic Package Tape and Reel Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package Limited) 100 Continuous Drain Current (Silicon Limited), TC = 25°C 205 8 1 D IDM 7 2 D PD 3 4 Continuous Drain Current(1) 29 Pulsed Drain Current, TA = 25°C(2) 400 Power Dissipation(1) 3.8 Power Dissipation, TC = 25°C 188 6 D TJ, Tstg Operating Junction, Storage Temperature 5 D EAS Avalanche Energy, Single Pulse ID = 80 A, L = 0.1 mH, RG = 25 Ω D A A W –55 to 175 °C 320 mJ (1) Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB. (2) Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. P0093-01 RDS(on) vs VGS Gate Charge 10 5 TC = 25°C, I D = 28 A TC = 125°C, I D = 28 A 4.5 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (m:) mΩ 2500 ID G 1.8 DEVICE Top View S VGS = 10 V (1) For all available packages, see the orderable addendum at the end of the data sheet. This 1.8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package. S nC 2.6 CSD18540Q5B 3 Description S 6.7 VGS = 4.5 V Device Information(1) 2 Applications • • • • UNIT VDS 4 3.5 3 2.5 2 1.5 1 0.5 ID = 28 A 9 VDS = 30 V 8 7 6 5 4 3 2 1 0 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 0 5 10 15 20 25 30 Qg - Gate Charge (nC) 35 40 45 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18540Q5B SLPS488B – JUNE 2014 – REVISED APRIL 2017 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 Receiving Notification of Documentation Updates.... 7 6.2 6.3 6.4 6.5 7 Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 7.2 7.3 7.4 Q5B Package Dimensions ........................................ 8 Recommended PCB Pattern..................................... 9 Recommended Stencil Pattern ................................. 9 Q5B Tape and Reel Information ............................. 10 4 Revision History Changes from Revision A (June 2016) to Revision B • Page Corrected package size typo in the Description section......................................................................................................... 1 Changes from Original (June 2014) to Revision A Page • Updated ID values. ................................................................................................................................................................. 1 • Updated PD values. ............................................................................................................................................................... 1 • Increased maximum temperature to 175°C. .......................................................................................................................... 1 • Updated Figure 2.................................................................................................................................................................... 5 • Changed Figure 6 to extend temperature to 175°C. .............................................................................................................. 5 • Changed Figure 8 to extend temperature to 175°C. .............................................................................................................. 6 • Replotted Figure 10 using 175°C data. .................................................................................................................................. 6 • Changed Figure 12 to extend temperature to 175°C. ........................................................................................................... 6 • Added Receiving Notification of Documentation Updates and Community Resources to Device and Documentation Support section. ..................................................................................................................................................................... 7 • Updated the mechanical drawing. .......................................................................................................................................... 8 2 Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD18540Q5B CSD18540Q5B www.ti.com SLPS488B – JUNE 2014 – REVISED APRIL 2017 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, I = 250 μA V RDS(on) Drain-to-source on resistance gfs Transconductance 60 1.5 V 1.9 2.3 VGS = 4.5 V, ID = 28 A 2.6 3.3 VGS = 10 V, ID = 28 A 1.8 2.2 VDS = 6 V, ID = 28 A 116 mΩ S DYNAMIC CHARACTERISTICS Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance RG Series gate resistance Qg Gate charge total (4.5 V) Qg Gate charge total (10 V) Qgd Gate charge gate-to-drain Qgs Gate charge gate-to-source Qg(th) Gate charge at Vth Qoss Output charge td(on) VGS = 0 V, VDS = 30 V, ƒ = 1 MHz VDS = 30 V, IDD = 28 A 3250 4230 pF 622 808 pF 15 20 pF 0.8 1.6 Ω 20 26 nC 41 53 nC 6.7 nC 8.8 nC 6.3 nC 83 nC Turnon delay time 6 ns tr Rise time 9 ns td(off) Turnoff delay time 20 ns tf Fall time 3 ns VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 10 V, IDS = 28 A, RG = 0 Ω DIODE CHARACTERISTICS VSD Diode forward voltage Qrr Reverse recovery charge trr Reverse recovery time ISD = 28 A, VGS = 0 V 0.8 VDS= 30 V, IF = 28 A, di/dt = 300 A/μs 145 1 nC V 82 ns 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX RθJC Junction-to-case thermal resistance (1) 0.8 RθJA Junction-to-ambient thermal resistance (1) (2) 50 (1) (2) UNIT °C/W RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD18540Q5B 3 CSD18540Q5B SLPS488B – JUNE 2014 – REVISED APRIL 2017 GATE www.ti.com GATE Source N-Chan 5x6 QFN TTA MIN Rev3 N-Chan 5x6 QFN TTA MAX Rev3 Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. Source Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. DRAIN DRAIN M0137-02 M0137-01 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) Figure 1. Transient Thermal Impedance 4 Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD18540Q5B CSD18540Q5B www.ti.com SLPS488B – JUNE 2014 – REVISED APRIL 2017 Typical MOSFET Characteristics (continued) 200 200 180 180 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) TA = 25°C (unless otherwise stated) 160 140 120 100 80 60 40 VGS = 4.5 V VGS = 6.0 V VGS = 10 V 20 TC = 125°C TC = 25°C TC = -55°C 160 140 120 100 80 60 40 20 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDS - Drain-to-Source Voltage (V) 0.9 1 1 1.5 2 2.5 3 3.5 4 VGS - Gate-to-Source Voltage (V) D002 4.5 5 D003 VDS = 5 V Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics 100000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 9 8 10000 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 1000 100 2 10 1 0 1 0 5 10 15 20 25 30 Qg - Gate Charge (nC) ID = 28 A 35 40 45 0 10 D004 60 D005 Figure 5. Capacitance 2.5 5 2.3 4.5 RDS(on) - On-State Resistance (m:) VGS(th) - Threshold Voltage (V) 50 VDS = 30 V Figure 4. Gate Charge 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 -75 20 30 40 VDS - Drain-to-Source Voltage (V) TC = 25°C, I D = 28 A TC = 125°C, I D = 28 A 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (°C) D006 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 ID = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD18540Q5B 5 CSD18540Q5B SLPS488B – JUNE 2014 – REVISED APRIL 2017 www.ti.com Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 100 2 VGS = 4.5 V VGS = 10 V ISD - Source-to-Drain Current (A) Normalized On-State Resistance 2.2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 0.0001 -50 -25 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature (°C) D008 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 1 D009 ID = 28 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage 100 IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 5000 1000 100 10 1 100 ms 10 ms 0.1 0.1 1 ms 100 µs 10 µs 1 10 VDS - Drain-to-Source Voltage (V) 100 TC = 25q C TC = 125q C 10 0.01 0.1 TAV - Time in Avalanche (ms) D010 1 D011 Single Pulse, Max RθJC = 0.8°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain-to-Source Current (A) 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 200 D012 Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD18540Q5B CSD18540Q5B www.ti.com SLPS488B – JUNE 2014 – REVISED APRIL 2017 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.3 Trademarks NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD18540Q5B 7 CSD18540Q5B SLPS488B – JUNE 2014 – REVISED APRIL 2017 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 Q5B Package Dimensions K H D3 6 D1 4 5 e 6 4 3 3 5 D2 7 2 E 2 7 • 1 8 1 8 L b (8x) c1 E1 d1 Top View d2 Bottom View Side View • Front View DIM MILLIMETERS MIN NOM MAX A 0.80 1.00 1.05 b 0.36 0.41 0.46 c 0.15 0.20 0.25 c1 0.15 0.20 0.25 c2 0.20 0.25 0.30 D1 4.90 5.00 5.10 D2 4.12 4.22 4.32 D3 3.90 4.00 4.10 d 0.20 0.25 0.30 d1 0.085 TYP d2 0.319 0.369 0.419 E 4.90 5.00 5.10 E1 5.90 6.00 6.10 E2 3.48 3.58 3.68 e H 0.36 0.46 0.56 L 0.46 0.56 0.66 L1 0.57 0.67 0.77 θ 0° — — K 8 1.27 TYP 1.40 TYP Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD18540Q5B CSD18540Q5B www.ti.com SLPS488B – JUNE 2014 – REVISED APRIL 2017 7.2 Recommended PCB Pattern For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques (SLPA005). 7.3 Recommended Stencil Pattern (0.020) 0.508 x4 (0.011) 0.286 (0.014) 0.350 (0.022) 0.562 x 4 (0.029) 0.746 x 8 2.186 (0.086) 4.318 (0.170) 0.300 (0.012) 1.270 (0.050) (0.030) 0.766 (0.051) 1.294 x8 (0.060) 1.525 1.270 (0.050) (0.042) 1.072 (0.259) 6.586 Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD18540Q5B 9 CSD18540Q5B SLPS488B – JUNE 2014 – REVISED APRIL 2017 www.ti.com K0 4.00 ±0.10 (See Note 1) 0.30 ±0.05 2.00 ±0.05 +0.10 –0.00 12.00 ±0.30 Ø 1.50 1.75 ±0.10 7.4 Q5B Tape and Reel Information 5.50 ±0.05 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN R 0.30 TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2. 2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm. 3. Material: black static-dissipative polystyrene. 4. All dimensions are in mm (unless otherwise specified). 5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket. 10 Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD18540Q5B PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD18540Q5B ACTIVE VSON-CLIP DNK 8 2500 RoHS-Exempt & Green NIPDAU | SN Level-1-260C-UNLIM -55 to 175 CSD18540 CSD18540Q5BT ACTIVE VSON-CLIP DNK 8 250 RoHS-Exempt & Green NIPDAU | SN Level-1-260C-UNLIM -55 to 175 CSD18540 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of