CSD25485F5
SLPS606B – AUGUST 2016 – REVISED FEBRUARY 2022
CSD25485F5 –20-V P-Channel FemtoFET™ MOSFET
Product Summary
1 Features
•
•
•
•
•
•
•
TA = 25°C
Low-on resistance
Low Qg and Qgd
Ultra-small footprint
– 1.53 mm × 0.77 mm
– 0.50-mm pad pitch
Low profile
– 0.36-mm height
Integrated ESD protection diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
Lead and halogen free
RoHS compliant
Drain-to-Source Voltage
–20
V
Qg
Gate Charge Total (–4.5 V)
2.7
nC
Qgd
Gate Charge Gate-to-Drain
0.56
nC
VGS = –1.8 V
89
VGS = –2.5 V
51
VGS = –4.5 V
35
VGS = –8 V
VGS(th)
Threshold Voltage
mΩ
29.7
–0.95
V
Device Information(1)
DEVICE
QTY
CSD25485F5
3000
CSD25485F5T
Optimized for industrial load switch applications
Optimized for general purpose switching
applications
(1)
250
MEDIA
PACKAGE
SHIP
7-Inch Reel
Femto
1.53-mm × 0.77-mm
SMD Leadless
Tape
and
Reel
For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
3 Description
This 29.7-mΩ, –20-V, P-Channel FemtoFET™
MOSFET technology is designed and optimized to
minimize the footprint in many handheld and mobile
applications. This technology is capable of replacing
standard small signal MOSFETs while providing a
significant reduction in footprint size.
.
VALUE
UNIT
VDS
Drain-to-Source Voltage
–20
V
VGS
Gate-to-Source Voltage
–12
V
Continuous Drain Current(1)
–3.2
Continuous Drain Current(2)
–5.3
Pulsed Drain Current(1) (3)
–31
Power Dissipation(1)
0.5
Power Dissipation(2)
1.4
ID
IDM
PD
V(ESD)
0.36 mm
TJ,
Tstg
(1)
(2)
(3)
0.77 mm
UNIT
VDS
RDS(on) Drain-to-Source On Resistance
2 Applications
•
•
TYPICAL VALUE
1.53 mm
Human-Body Model (HBM)
4000
Charged-Device Model (CDM)
2000
Operating Junction,
Storage Temperature
–55 to 150
A
A
W
V
°C
Min Cu, typical RθJA = 245°C/W.
Max Cu, typical RθJA = 90°C/W.
Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
G
Figure 3-1. Typical Part Dimensions
.
S
.
.
.
D
.
.
Figure 3-2. Top View
.
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD25485F5
www.ti.com
SLPS606B – AUGUST 2016 – REVISED FEBRUARY 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Specifications.................................................................. 3
5.1 Electrical Characteristics.............................................3
5.2 Thermal Information....................................................3
5.3 Typical MOSFET Characteristics................................ 3
6 Device and Documentation Support..............................6
6.1 Receiving Notification of Documentation Updates......6
6.2 Trademarks................................................................. 6
7 Mechanical, Packaging, and Orderable Information.... 7
7.1 Mechanical Dimensions.............................................. 7
7.2 Recommended Minimum PCB Layout........................8
7.3 Recommended Stencil Pattern................................... 8
4 Revision History
Changes from Revision A (January 2017) to Revision B (February 2022)
Page
• Changed ultra-low profile bullet from 0.35 mm to 0.36 mm in height................................................................. 1
• Updated ultra-low profile image height from 0.35 mm to 0.36 mm..................................................................... 1
• Changed ultra-low profile image height from 0.35 mm to 0.36 mm.................................................................... 7
• Added FemtoFET Surface Mount Guide note.................................................................................................... 8
Changes from Revision * (August 2016) to Revision A (January 2017)
Page
• Changed Min Cu RθJA from 90°C/W : to 245°C/W in Figure 5-11 ......................................................................3
• Added Table 7-1 in the Mechanical Dimensions section.................................................................................... 7
2
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SLPS606B – AUGUST 2016 – REVISED FEBRUARY 2022
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
–100
nA
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, IDS = –250 μA
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = –16 V
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = –12 V
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, IDS = –250 μA
RDS(on)
Drain-to-source on resistance
gfs
Transconductance
–20
V
–25
nA
–0.95
–1.3
V
VGS = –1.8 V, IDS = –0.1 A
89
250
VGS = –2.5 V, IDS = –0.9 A
51
70
VGS = –4.5 V, IDS = –0.9 A
35
42
VGS = –8 V, IDS = –0.9 A
29.7
35
VDS = –2 V, IDS = –0.9 A
7
–0.7
mΩ
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
RG
Series gate resistance
20
Qg
Gate charge total (–4.5 V)
2.7
Qgd
Gate charge gate-to-drain
Qgs
Gate charge gate-to-source
Qg(th)
Gate charge at Vth
Qoss
Output charge
td(on)
Turnon delay time
tr
Rise time
td(off)
Turnoff delay time
tf
Fall time
VGS = 0 V, VDS = –10 V,
ƒ = 1 MHz
VDS = –10 V, IDS = –0.9 A
VDS = –10 V, VGS = 0 V
VDS = –10 V, VGS = –4.5 V,
IDS = –0.9 A, RG = 2 Ω
410
533
pF
212
276
pF
17
23
pF
3.5
nC
Ω
0.56
nC
0.67
nC
0.40
nC
4.4
nC
14
ns
6
ns
27
ns
14
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = –0.9 A, VGS = 0 V
–0.75
–1
V
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
RθJA
(1)
(2)
MIN
TYP
resistance(1)
90
Junction-to-ambient thermal resistance(2)
245
Junction-to-ambient thermal
MAX
UNIT
°C/W
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
Device mounted on FR4 material with minimum Cu mounting area.
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
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SLPS606B – AUGUST 2016 – REVISED FEBRUARY 2022
-IDS - Drain-to-Source Current (A)
25
Figure 5-1. Transient Thermal Impedance
VGS = -2.5 V
VGS = -4.5 V
VGS = -8 V
20
15
10
5
0
0
0.25
0.5
0.75
1
1.25
-VDS - Drain-to-Source Voltage (V)
1.5
D002
Figure 5-2. Saturation Characteristics
-IDS - Drain-To-Source Current (A)
20
TC = 125° C
TC = 25° C
TC = -55° C
18
16
14
12
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
-VGS - Gate-To-Source Voltage (V)
3
D003
VDS = –5 V
Figure 5-3. Transfer Characteristics
5000
7
1000
6
C - Capacitance (pF)
-VGS - Gate-to-Source Voltage (V)
8
5
4
3
2
100
10
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
1
1
0
0
0.5
1
1.5
2
2.5
3
3.5
Qg - Gate Charge (nC)
ID = –0.9 A
4
4.5
5
0
2
D004
VDS = –10 V
4
6
8
10
12
14
16
-VDS - Drain-to-Source Voltage (V)
18
20
D005
Figure 5-5. Capacitance
Figure 5-4. Gate Charge
4
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SLPS606B – AUGUST 2016 – REVISED FEBRUARY 2022
120
RDS(on) - On-State Resistance (m:)
-VGS(th) - Threshold Voltage (V)
1.25
1.15
1.05
0.95
0.85
0.75
0.65
0.55
0.45
-75
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
125
150
75
60
45
30
15
0
2
D006
Figure 5-6. Threshold Voltage vs Temperature
4
6
8
10
-VGS - Gate-To-Source Voltage (V)
12
D007
Figure 5-7. On-State Resistance vs Gate-to-Source
Voltage
1.5
100
VGS = -2.5 V
VGS = -8 V
-ISD - Source-To-Drain Current (A)
Normalized On-State Resistance
90
0
175
ID = –250 µA
1.4
TC = 25° C, ID = -0.9 A
TC = 125° C, ID = -0.9 A
105
1.3
1.2
1.1
1
0.9
TC = 25qC
TC = 125qC
10
1
0.1
0.01
0.001
0.8
0.7
-75
0.0001
0
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
125
150
0.2
0.4
0.6
0.8
-VSD - Source-To-Drain Voltage (V)
175
1
D009
Figure 5-9. Typical Diode Forward Voltage
D008
ID = –0.9 A
Figure 5-8. Normalized On-State Resistance vs
Temperature
4.5
-IDS - Drain-to-Source Current (A)
-IDS - Drain-To-Source Current (A)
100
10
1
100 ms
10 ms
0.1
0.1
1 ms
100 µs
1
10
-VDS - Drain-To-Source Voltage (V)
100
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25
D010
Single pulse, typ min Cu RθJA = 245°C/W
Figure 5-10. Maximum Safe Operating Area (SOA)
0
25
50
75
100 125
TA - Ambient Temperature (qC)
150
175
D011
Typ min Cu RθJA = 245°C/W
Figure 5-11. Maximum Drain Current vs
Temperature
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SLPS606B – AUGUST 2016 – REVISED FEBRUARY 2022
6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
6.2 Trademarks
FemtoFET™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
6
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SLPS606B – AUGUST 2016 – REVISED FEBRUARY 2022
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Mechanical Dimensions
0.77
0.69
A
B
PIN 1 INDEX AREA
1.53
1.45
C
0.36 MAX
SEATING PLANE
3
0.5
(R0.05) TYP
1
1
3X
3X
0.40
0.38
0.16
0.14
0.015
TOP B
A
4222132/A 06/2015
A.
B.
C.
All linear dimensions are in millimeters (dimensions and tolerancing per AME T14.5M-1994).
This drawing is subject to change without notice.
This package is a PB-free solder land design.
Table 7-1. Pin
Configuration
POSITION
DESIGNATION
Pin 1
Gate
Pin 2
Source
Pin 3
Drain
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SLPS606B – AUGUST 2016 – REVISED FEBRUARY 2022
7.2 Recommended Minimum PCB Layout
3X (0.39)
(0.05) MIN
ALL AROUND
1
(R0.05) TYP
3X (0.15)
2
SYMM
SOLDER MASK
OPENING
TYP
(0.5)
3
METAL UNDER
SOLDER MASK
TYP
SYMM
A.
B.
All dimensions are in millimeters.
LAND PATTERN EXAMPLE
SOLDER
DEFINED
For more information, see FemtoFET Surface Mount
GuideMASK
(SLRA003D).
SCALE:50
7.3 Recommended Stencil Pattern
3X (0.39)
1
3x (0.15)
3X (0.2)
(R0.05) TYP
SYMM
2
4 x SOLDER MASK EDGE
0.525
3
SYMM
A.
All dimensions are in millimeters.
SOLDER PASTE EXAMPLE
ON 0.075 - 0.1 mm THICK STENCIL
SCALE:50
8
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Jan-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD25485F5
ACTIVE
PICOSTAR
YJK
3
3000
RoHS & Green
NIAU
Level-1-260C-UNLIM
-55 to 150
3H
CSD25485F5T
ACTIVE
PICOSTAR
YJK
3
250
RoHS & Green
NIAU
Level-1-260C-UNLIM
-55 to 150
3H
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of