CSD75301W1015

CSD75301W1015 www.ti.com SLPS212C – AUGUST 2009 – REVISED MARCH 2012 P-Channel NexFET™ Power MOSFET Check for Samples: CSD75301W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1mm × 1.5mm Low Profile – 0.62mm Ultra Low Qg and Qgd Pb Free / RoHS Compliant Halogen Free (Per MOSFET unless otherwise stated) VDS Drain to Source Voltage –20 V Qg Gate Charge Total (4.5V) 1.5 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) mΩ VGS = –2.5V 105 mΩ VGS = –4.5V 80 mΩ –0.7 V ORDERING INFORMATION Battery Management Load Switch Battery Protection Device Package CSD75301W1015 1 × 1.5 Wafer Level Package Media 7-inch reel Qty Ship 3000 Tape and Reel ABSOLUTE MAXIMUM RATINGS DESCRIPTION The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Figure 1. Top View D2 G2 S S G1 D1 TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage –20 V VGS Gate to Source Voltage ±8 V ID Continuous Drain Current, TC = 25°C(1) (2) –1.2 A IDM Pulsed Drain Current, TA = 25°C(1) (2) (3) –17.5 A PD Power Dissipation(1) (2) 0.8 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C (1) Per device, both devices in conduction. (2) RθJA = 74°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (3) Pulse width ≤300μs, duty cycle ≤2% RDS(ON) vs VGS Gate Charge 300 6 ID = −1A 250 5 200 −VG − Gate Voltage − V RDS(on) − On-State Resistance − mΩ nC 150 Voltage threshold APPLICATIONS • • • 0.3 VGS = –1.8V TJ = 125°C 150 100 TJ = 25°C 50 1 2 4 3 2 1 0 0 ID = −1A VDS = −10V 3 4 5 −VGS − Gate to Source Voltage − V 6 G006 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 Qg − Gate Charge − nC 2.00 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2012, Texas Instruments Incorporated CSD75301W1015 SLPS212C – AUGUST 2009 – REVISED MARCH 2012 www.ti.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) (Per MOSFET unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = –250μA IDSS Drain to Source Leakage Current VGS = 0V, VDS = –16V IGSS Gate to Source Leakage Current VDS = 0V, VGS = –8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = –250μA RDS(on) Drain to Source On Resistance gfs Transconductance –20 –0.4 V –1 μA –100 nA –0.7 –1.0 V VGS = –1.8V, ID = –1A 150 190 mΩ VGS = –2.5V, ID = –1A 105 135 mΩ VGS = –4.5V, ID = –1A 80 100 mΩ VDS = –10V, ID = –1A 5.2 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance 150 195 pF 67 87 CRSS pF Reverse Transfer Capacitance 24 31 pF Qg Gate Charge Total (–4.5V) 1.5 2.1 nC Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = –10V, f = 1MHz VDS = –10V, ID = –1A VDS = –9.5V, VGS = 0V VDS = –10V, VGS = –4.5V, ID = –1A RG = 30Ω 0.3 nC 0.28 nC 0.12 nC 1.1 nC 3 ns 1.7 ns 38 ns 16 ns Diode Characteristics VSD Diode Forward Voltage IS = –1A, VGS = 0V –0.81 –1 V Qrr Reverse Recovery Charge Vdd = –9.5V, IF = –1A, di/dt = 200A/μs 2 nC trr Reverse Recovery Time Vdd = –9.5V, IF = –1A, di/dt = 200A/μs 7.5 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) MAX UNIT R θJC Thermal Resistance Junction to Ambient (1) PARAMETER (2) 136 °C/W R θJA Thermal Resistance Junction to Ambient (2) (3) 93 °C/W (1) (2) (3) 2 MIN TYP Device mounted on FR4 material with Minimum Cu mounting area. Measured with both devices biased in a parallel condition. Device mounted on FR4 material with 1in2 of 2 oz Cu. Copyright © 2009–2012, Texas Instruments Incorporated CSD75301W1015 www.ti.com SLPS212C – AUGUST 2009 – REVISED MARCH 2012 P-Chan 1.0x1.5 CSP TTA MAX Rev1 P-Chan 1.0x1.5 CSP TTA MIN Rev1 Max RθJA = 136°C/W when mounted on minimum pad area of 2 oz. Cu. Max RθJA = 93°C/W when mounted on 1inch2 of 2 oz. Cu. M0155-01 M0156-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA – Normalized Thermal Impedance 10 1 0.5 0.3 0.1 0.01 0.1 0.05 Duty Cycle = t1/t2 0.02 0.01 P t1 Single Pulse t2 0.001 0.0001 0.00001 RqJA = 109°C/W (min Cu) TJ = P ´ ZqJA ´ RqJA 0.0001 0.001 0.01 0.1 1 10 100 1k tp – Pulse Duration – s G012 Figure 2. Transient Thermal Impedance Copyright © 2009–2012, Texas Instruments Incorporated 3 CSD75301W1015 SLPS212C – AUGUST 2009 – REVISED MARCH 2012 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 5 5.0 VDS = −5V VGS = −4.5V 4.0 −ID − Drain Current − A −ID − Drain Current − A 4.5 3.5 VGS = −3V 3.0 VGS = −1.5V VGS = −2.5V 2.5 2.0 1.5 VGS = −2V 1.0 4 3 TJ = 125°C 2 TJ = 25°C 1 TJ = −55°C 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.50 3.0 −VDS − Drain to Source Voltage − V G001 1.25 1.50 1.75 2.00 2.25 2.50 G002 Figure 4. Transfer Characteristics 6 200 ID = −1A VDS = −10V f = 1MHz VGS = 0V 180 160 C − Capacitance − pF −VG − Gate Voltage − V 1.00 −VGS − Gate to Source Voltage − V Figure 3. Saturation Characteristics 5 0.75 4 3 2 140 COSS = CDS + CGD 120 CISS = CGD + CGS 100 80 60 CRSS = CGD 40 1 20 0 0.00 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Qg − Gate Charge − nC 0 5 G004 300 RDS(on) − On-State Resistance − mΩ −VGS(th) − Threshold Voltage − V 20 Figure 6. Capacitance 1.0 ID = −250µA 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ID = −1A 250 200 TJ = 125°C 150 100 TJ = 25°C 50 0 −25 25 75 125 175 TJ − Junction Temperature − °C Figure 7. Threshold Voltage vs. Temperature 4 15 −VDS − Drain to Source Voltage − V G003 Figure 5. Gate Charge 0.0 −75 10 G005 0 1 2 3 4 5 −VGS − Gate to Source Voltage − V 6 G006 Figure 8. On Resistance vs. Gate Voltage Copyright © 2009–2012, Texas Instruments Incorporated CSD75301W1015 www.ti.com SLPS212C – AUGUST 2009 – REVISED MARCH 2012 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 10 1.4 ID = −1A VGS = −4.5V −ISD − Source to Drain Current − A Normalized On-State Resistance 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −75 1 TJ = 125°C 0.1 TJ = 25°C 0.01 0.001 0.0001 −25 25 75 125 TJ − Case Temperature − °C 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 −VSD − Source to Drain Voltage − V G007 Figure 9. On Resistance vs. Temperature G008 Figure 10. Typical Diode Forward Voltage 1.4 100 −ID − Drain Current − A −ID − Drain Current − A 1.2 10 1ms 1 10ms 0.1 0.01 0.1 Area Limited by RDS(on) 100ms 1s DC Single Pulse RθJA = 109°C/W (min Cu) 1 10 −VDS − Drain To Source Voltage − V Figure 11. Maximum Safe Operating Area Copyright © 2009–2012, Texas Instruments Incorporated 1.0 0.8 0.6 0.4 0.2 100 G009 0.0 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature − °C 150 175 G011 Figure 12. Maximum Drain Current vs. Temperature 5 CSD75301W1015 SLPS212C – AUGUST 2009 – REVISED MARCH 2012 www.ti.com MECHANICAL DATA CSD75301W1015 Package Dimensions Pin 1 Mark 1 Solder Ball Ø 0.31 ±0.075 2 1 A B 1.50 B 1.00 +0.00 –0.10 0.50 A 2 Pin 1 Mark C C 1.00 +0.00 –0.10 0.50 Side View Bottom View 0.04 0.62 Max 0.38 Top View 0.62 Max Seating Plate Front View M0157-01 NOTE: All dimensions are in mm (unless othersse specified) Pinout 6 POSITION DESIGNATION B1, B2 Source C1 Gate1 C2 Drain1 A2 Gate2 A1 Drain2 Copyright © 2009–2012, Texas Instruments Incorporated CSD75301W1015 www.ti.com SLPS212C – AUGUST 2009 – REVISED MARCH 2012 Land Pattern Recommendation Ø 0.25 1 2 1.00 0.50 A B C 0.50 M0158-01 NOTE: All dimensions are in mm (unless othersse specified) Tape and Reel Information 4.00 ±0.10 Ø 1.50 ±0.10 4.00 ±0.10 Ø 0.60 0.86 ±0.05 +0.05 –0.10 1.65 ±0.05 2° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 2.00 ±0.05 0.254 ±0.02 1.19 ±0.05 2° Max M0159-01 NOTE: All dimensions are in mm (unless othersse specified) Copyright © 2009–2012, Texas Instruments Incorporated 7 CSD75301W1015 SLPS212C – AUGUST 2009 – REVISED MARCH 2012 www.ti.com REVISION HISTORY Changes from Original (August 2009) to Revision A • Changed location of the Pin 1 indicator dot in the pin out illustration. .................................................................................. 1 Changes from Revision A (November 2009) to Revision B • Page Page Deleted the Package Marking Information section ............................................................................................................... 7 Changes from Revision B (November 2009) to Revision C Page • Changed the CSD75301W1015 Package Dimensions section. Top View From: 15.00 To: 1.50 ........................................ 6 8 Copyright © 2009–2012, Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications. TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, TI will not be responsible for any failure to meet such requirements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions: Products Applications Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps DSP dsp.ti.com Energy and Lighting www.ti.com/energy Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial Interface interface.ti.com Medical www.ti.com/medical Logic logic.ti.com Security www.ti.com/security Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com OMAP Mobile Processors www.ti.com/omap Wireless Connectivity www.ti.com/wirelessconnectivity TI E2E Community Home Page e2e.ti.com Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2012, Texas Instruments Incorporated