CSD87501LT

Order Now Product Folder Support & Community Tools & Software Technical Documents CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Low on-resistance Small footprint of 3.37 mm × 1.47 mm Ultra-low profile – 0.2-mm high Lead free RoHS compliant Halogen free Gate ESD protection TA = 25°C TYPICAL VALUE UNIT 30 V Gate Charge Total (4.5 V) 15 nC Gate Charge Gate-to-Drain 6.0 VS1S2 Source-to-Source Voltage Qg Qgd RS1S2(on) Source-to-Source OnResistance VGS(th) Threshold Voltage 2 Applications • • • This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices. Top View S1 S2 G1 G2 S1 S1 S2 S2 6.6 1.8 mΩ V DEVICE MEDIA QTY PACKAGE SHIP CSD87501L 7-Inch Reel 3000 CSD87501LT 7-Inch Reel 250 3.37 mm × 1.47 mm Land Grid Array Package Tape and Reel Source 1 Absolute Maximum Ratings TA = 25°C VALUE UNIT VS1S2 Source-to-Source Voltage 30 V VGS Gate-to-Source Voltage ±20 V IS Continuous Source Current(1) 14 A ISM Pulsed Source Current(2) 72 A PD Power Dissipation 2.5 W V(ESD) Human-Body Model (HBM) 2 kV TJ, Tstg Operating Junction, Storage Temperature –55 to 150 °C (1) Typical RθJA = 50°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB. (2) Typical min Cu RθJA = 135°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. Configuration Source 2 Gate 1 Gate 2 RS1S2(on) vs VGS Gate Charge 10 24 TC = 25°C, I S = 7 A TC = 125°C, I S = 7 A 21 VGS - Gate-to-Source Voltage (V) RS1S2(on) - On-State Resistance (m:) VGS = 10 V (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description S2 9.3 Device Information(1) Battery management Battery protection USB Type-C / PD S1 nC VGS = 4.5 V 18 15 12 9 6 3 0 IS = 7 A, VS1S2 = 15 V 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 0 4 8 12 16 20 Qg - Gate Charge (nC) 24 28 32 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 6.2 6.3 6.4 6.5 7 Receiving Notification of Documentation Updates.... Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 Package Dimensions ................................................ 8 7.2 Recommended PCB Pattern..................................... 9 7.3 Recommended Stencil Pattern ................................. 9 4 Revision History Changes from Revision A (April 2015) to Revision B Page • Added Receiving Notification of Documentation Updates section and Community Resources section ................................ 7 • Added Pin Configuration table in the Mechanical, Packaging, and Orderable Information section ....................................... 8 Changes from Original (February 2015) to Revision A • 2 Page Extended Y axis in Figure 9 down to 0.01 A .......................................................................................................................... 4 Submit Documentation Feedback Copyright © 2015–2019, Texas Instruments Incorporated Product Folder Links: CSD87501L CSD87501L www.ti.com SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 5 Specifications 5.1 Electrical Characteristics TA = 25°C unless otherwise stated PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVS1S2 Source-to-source voltage VGS = 0 V, IS = 250 μA IS1S2 Source-to-source leakage current VGS = 0 V, VS1S2 = 24 V 1 μA IGSS Gate-to-source leakage current VS1S2 = 0 V, VGS = 20 V 10 µA VGS(th) Gate-to-source threshold voltage VS1S2 = VGS, IS = 250 μA V RS1S2(on) Source-to-source on-resistance gfs Transconductance 30 1.3 V 1.8 2.3 VGS = 4.5 V, IS = 7 A 9.3 11.0 VGS = 10 V, IS = 7 A 6.6 7.8 VS1S2 = 3 V, IS = 7 A 48 mΩ S DYNAMIC CHARACTERISTICS (1) Ciss Input capacitance Coss Output capacitance 1620 2110 pF 189 246 pF Crss RG Reverse transfer capacitance 152 198 pF Series gate resistance 300 450 Qg Gate charge total (4.5 V) Ω 15 20 nC Qg Gate charge total (10 V) Qgd Gate charge gate-to-drain 31 40 nC Qgs Gate charge gate-to-source Qg(th) Gate charge at Vth Qoss Output charge td(on) VGS = 0 V, VS1S2 = 15 V, ƒ = 1 MHz 6.0 nC 5.0 nC 2.5 nC 7.6 nC Turn on delay time 164 ns tr Rise time 260 ns td(off) Turn off delay time 709 ns tf Fall time 712 ns (1) VS1S2 = 15 V, IS = 7 A VS1S2 = 15 V, VGS = 0 V VS1S2 = 15 V, VGS = 10 V, IS1S2 = 7 A, RG = 0 Ω Dynamic characteristics values specified are per single FET. 5.2 Thermal Information TA = 25°C unless otherwise stated THERMAL METRIC RθJA (1) (2) MIN TYP Junction-to-ambient thermal resistance (1) 135 Junction-to-ambient thermal resistance (2) 50 MAX UNIT °C/W Device mounted on FR4 material with minimum Cu mounting area. Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2015–2019, Texas Instruments Incorporated Product Folder Links: CSD87501L 3 CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 www.ti.com 5.3 Typical MOSFET Characteristics TA = 25°C unless otherwise stated Figure 1. Transient Thermal Impedance 50 IS1S2 - Source-to-Source Current (A) IS1S2 - Source-to-Source Current (A) 50 40 30 20 10 VGS = 4.5 V VGS = 6 V VGS = 10 V 0 45 40 35 30 25 20 15 10 TC = 125°C TC = 25°C TC = -55°C 5 0 0 0.1 0.2 0.3 0.4 0.5 VS1S2 - Source-to-Source Voltage (V) 0.6 0 D002 0.5 1 1.5 2 2.5 VS1S2 - Source-to-Source Voltage (V) 3 3.5 D003 VS1S2 = 15 V Figure 2. Saturation Characteristics 4 Submit Documentation Feedback Figure 3. Transfer Characteristics Copyright © 2015–2019, Texas Instruments Incorporated Product Folder Links: CSD87501L CSD87501L www.ti.com SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 Typical MOSFET Characteristics (continued) TA = 25°C unless otherwise stated 10000 9 8 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 1000 100 2 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 1 0 10 0 4 8 12 16 20 Qg - Gate Charge (nC) IS = 7 A 24 28 32 0 3 6 9 12 15 18 21 24 VS1S2 - Source-to-Source Voltage (V) D004 D005 Figure 5. Capacitance 2.4 24 RS1S2(on) - On-State Resistance (m:) VGS(th) - Threshold Voltage (V) 30 VS1S2 = 15 V Figure 4. Gate Charge 2.2 2 1.8 1.6 1.4 1.2 1 -75 27 TC = 25°C, I S = 7 A TC = 125°C, I S = 7 A 21 18 15 12 9 6 3 0 -50 -25 0 25 50 75 100 TC - Case Temperature (°C) 125 150 175 0 2 4 D006 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 IS = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Source-to-Source Resistance vs Gate-to-Source Voltage 1.6 100 VGS = 4.5 V VGS = 10 V IS1S2 - Source-to-Source Current (A) Normalized On-State Resistance 1.8 1.4 1.2 1 0.8 0.6 -75 -50 -25 0 25 50 75 100 TC - Case Temperature (°C) 125 150 175 10 1 0.1 100 ms 10 ms 1 ms 0.01 0.1 100 µs 10 µs 1 10 VS1S2 - Source-to-Source Voltage (V) D008 IS = 7 A 100 D009 Single pulse, max RθJA = 135°C/W Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Maximum Safe Operating Area Submit Documentation Feedback Copyright © 2015–2019, Texas Instruments Incorporated Product Folder Links: CSD87501L 5 CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 www.ti.com Typical MOSFET Characteristics (continued) TA = 25°C unless otherwise stated IS1S2 - Source-to-Source Current (A) 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 D010 Figure 10. Maximum Source Current vs Temperature 6 Submit Documentation Feedback Copyright © 2015–2019, Texas Instruments Incorporated Product Folder Links: CSD87501L CSD87501L www.ti.com SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.3 Trademarks NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2015–2019, Texas Instruments Incorporated Product Folder Links: CSD87501L 7 CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 Package Dimensions 0.65 TYP B 1.52 1.42 0.325 TYP A 2 1 0.65 TYP A PIN A1 CORNER B SYMM 3.42 3.32 2X C 2.6 D E 0.33 0.27 C A B 10X 0.015 SYMM 0.200±0.02 C SEATING PLANE All dimensions in millimeters. Table 1. Pin Configuration 8 Position Designation A1, B1, D1, E1 Source 1 C1 Gate 1 A2, B2, D2, E2 Source 2 C2 Gate 2 Submit Documentation Feedback Copyright © 2015–2019, Texas Instruments Incorporated Product Folder Links: CSD87501L CSD87501L www.ti.com SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 7.2 Recommended PCB Pattern (0.65) TYP 10X ( 0.3) 2 1 A (0.65) TYP B SYMM C D E SYMM LAND PATTERN EXAMPLE 7.3 Recommended Stencil Pattern (0.65) TYP 10X ( 0.3) 1 2 A (0.65) TYP (R0.05) TYP B SYMM C METAL TYP D E SYMM All dimensions are in millimeters unless otherwise SOLDER noted. PASTE EXAMPLE www.ti.com Submit Documentation Feedback Copyright © 2015–2019, Texas Instruments Incorporated Product Folder Links: CSD87501L 9 PACKAGE OPTION ADDENDUM www.ti.com 11-Jan-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD87501L ACTIVE PICOSTAR YJG 10 3000 RoHS & Green NIAU Level-1-260C-UNLIM CSD87501LT ACTIVE PICOSTAR YJG 10 250 RoHS & Green NIAU Level-1-260C-UNLIM CSD87501 -55 to 150 CSD87501 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of