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DRV8833
SLVSAR1E – JANUARY 2011 – REVISED JULY 2015
DRV8833 Dual H-Bridge Motor Driver
1 Features
3 Description
•
The DRV8833 device provides a dual bridge motor
driver solution for toys, printers, and other
mechatronic applications.
1
•
•
•
•
•
Dual-H-Bridge Current-Control Motor Driver
– Can Drive Two DC Motors or One Stepper
Motor
– Low MOSFET ON-Resistance: HS + LS 360
mΩ
Output Current (at VM = 5 V, 25°C)
– 1.5-A RMS, 2-A Peak per H-Bridge in PWP
and RTY Package Options
– 500-mA RMS, 2-A Peak per H-Bridge in PW
Package Option
Outputs can be in Parallel for
– 3-A RMS, 4-A Peak (PWP and RTY)
– 1-A RMS, 4-A Peak (PW)
Wide Power Supply Voltage Range:
2.7 to 10.8 V
PWM Winding Current Regulation and Current
Limiting
Thermally Enhanced Surface-Mount Packages
The device has two H-bridge drivers, and can drive
two DC brush motors, a bipolar stepper motor,
solenoids, or other inductive loads.
The output driver block of each H-bridge consists of
N-channel power MOSFETs configured as an Hbridge to drive the motor windings. Each H-bridge
includes circuitry to regulate or limit the winding
current.
Internal shutdown functions with a fault output pin are
provided for overcurrent protection, short-circuit
protection,
undervoltage
lockout,
and
overtemperature. A low-power sleep mode is also
provided.
The DRV8833 is packaged in a 16-pin WQFN
package with PowerPAD™ (Eco-friendly: RoHS & no
Sb/Br).
Device Information(1)
2 Applications
•
•
•
•
•
•
PART NUMBER
Battery-Powered Toys
POS Printers
Video Security Cameras
Office Automation Machines
Gaming Machines
Robotics
DRV8833
PACKAGE
BODY SIZE (NOM)
TSSOP (16)
5.00 mm × 4.40 mm
HTSSOP (16)
5.00 mm × 4.40 mm
WQFN (16)
4.00 mm × 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
2.7 to 10.8 V
M
1.5 A
nSLEEP
nFAULT
t
Controller
DRV8833
+
PWM
Stepper or
Brushed DC
Motor Driver
+
t
1.5 A
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV8833
SLVSAR1E – JANUARY 2011 – REVISED JULY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
5
6.1
6.2
6.3
6.4
6.5
6.6
5
5
5
5
6
7
Detailed Description .............................................. 8
7.1
7.2
7.3
7.4
8
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Overview ................................................................... 8
Functional Block Diagram ......................................... 8
Feature Description................................................... 9
Device Functional Modes........................................ 11
Application and Implementation ........................ 12
8.1 Application Information............................................ 12
8.2 Typical Application .................................................. 12
9
Power Supply Recommendations...................... 14
9.1 Bulk Capacitance .................................................... 14
9.2 Power Supply and Logic Sequencing ..................... 14
10 Layout................................................................... 15
10.1
10.2
10.3
10.4
Layout Guidelines .................................................
Layout Example ....................................................
Thermal Considerations ........................................
Power Dissipation .................................................
15
15
16
16
11 Device and Documentation Support ................. 17
11.1
11.2
11.3
11.4
11.5
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
17
12 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (March 2015) to Revision E
Page
•
Updated Features bullets to include specifications for other packages ................................................................................. 1
•
Added note back to Pin Functions regarding the different I/O types ..................................................................................... 3
•
Corrected the device name and current regulation description in Overview ......................................................................... 8
•
Corrected output current to 1.5-A RMS from 700-mA RMS .................................................................................................. 8
Changes from Revision C (January 2013) to Revision D
•
2
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
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SLVSAR1E – JANUARY 2011 – REVISED JULY 2015
5 Pin Configuration and Functions
PWP Package
16-Pin HTSSOP
Top View
12
6
11
7
10
8
9
AISEN
AOUT2
BOUT2
BISEN
nSLEEP
AOUT1
AISEN
AOUT2
BOUT2
BISEN
BOUT1
nFAULT
13
GND
(PPAD)
2
3
11
10
9
4
VINT
GND
VM
VCP
BOUT1
nFAULT
BIN1
BIN2
PW Package
16-Pin TSSOP
Top View
14
12
1
8
13
GND
(PPAD)
5
7
14
4
AOUT1
nSLEEP
AIN1
AIN2
3
AIN1
AIN2
VINT
GND
VM
VCP
BIN2
BIN1
15
15
16
16
2
6
1
5
nSLEEP
AOUT1
AISEN
AOUT2
BOUT2
BISEN
BOUT1
nFAULT
RTY Package
16-Pin WQFN
Top View
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
AIN1
AIN2
VINT
GND
VM
VCP
BIN2
BIN1
Pin Functions
PIN
NAME
WQFN
HTSSOP,
TSSOP
I/O (1)
DESCRIPTION
EXTERNAL COMPONENTS
OR CONNECTIONS
POWER AND GROUND
GND
11
PPAD
13
—
Device ground. HTSSOP package
has PowerPAD.
Both the GND pin and device PowerPAD
must be connected to ground.
VINT
12
14
—
Internal supply bypass
Bypass to GND with 2.2-μF, 6.3-V
capacitor.
VM
10
12
—
Device power supply
Connect to motor supply. A 10-µF
(minimum) ceramic bypass capacitor to
GND is recommended.
VCP
9
11
IO
High-side gate drive voltage
Connect a 0.01-μF, 16-V (minimum) X7R
ceramic capacitor to VM.
AIN1
14
16
I
Bridge A input 1
Logic input controls state of AOUT1.
Internal pulldown.
AIN2
13
15
I
Bridge A input 2
Logic input controls state of AOUT2.
Internal pulldown.
BIN1
7
9
I
Bridge B input 1
Logic input controls state of BOUT1.
Internal pulldown.
BIN2
8
10
I
Bridge B input 2
Logic input controls state of BOUT2.
Internal pulldown.
nSLEEP
15
1
I
Sleep mode input
Logic high to enable device, logic low to
enter low-power sleep mode and reset all
internal logic. Internal pulldown.
CONTROL
(1)
I = Input, O = Output, OZ = Tri-state output, OD = Open-drain output, IO = Input/output
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SLVSAR1E – JANUARY 2011 – REVISED JULY 2015
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Pin Functions (continued)
PIN
EXTERNAL COMPONENTS
OR CONNECTIONS
WQFN
HTSSOP,
TSSOP
I/O (1)
6
8
OD
Fault output
Logic low when in fault condition
(overtemperature, overcurrent)
AISEN
1
3
IO
Bridge A ground / ISENSE
Connect to current sense resistor for bridge
A, or GND if current control not needed
BISEN
4
6
IO
Bridge B ground / ISENSE
Connect to current sense resistor for bridge
B, or GND if current control not needed
AOUT1
16
2
O
Bridge A output 1
AOUT2
2
4
O
Bridge A output 2
BOUT1
5
7
O
Bridge B output 1
BOUT2
3
5
O
Bridge B output 2
NAME
DESCRIPTION
STATUS
nFAULT
OUTPUT
4
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Connect to motor winding A
Connect to motor winding B
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Product Folder Links: DRV8833
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
VM
(1)
MIN
MAX
UNIT
Power supply voltage
–0.3
11.8
V
Digital input pin voltage
–0.5
7
V
xISEN pin voltage
–0.3
0.5
V
Peak motor drive output current
Internally limited
A
TJ
Operating junction temperature
–40
150
°C
Tstg
Storage temperature
–60
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±4000
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins (2)
±1500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
TA = 25°C (unless otherwise noted)
MIN
VM
Motor power supply voltage range (1)
VDIGIN
Digital input pin voltage range
IOUT
RTY package continuous RMS or DC output current per bridge (2)
(1)
(2)
MAX
UNIT
2.7
NOM
10.8
V
–0.3
5.75
V
1.5
A
RDS(ON) increases and maximum output current is reduced at VM supply voltages below 5 V.
VM = 5 V, power dissipation and thermal limits must be observed.
6.4 Thermal Information
DRV8833
THERMAL METRIC (1)
PWP
(HTSSOP)
RTY
(WQFN)
PW
(TSSOP)
UNIT
16 PINS
16 PINS
16 PINS
RθJA
Junction-to-ambient thermal resistance
40.5
37.2
103.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
32.9
34.3
38
°C/W
RθJB
Junction-to-board thermal resistance
28.8
15.3
48.1
°C/W
ψJT
Junction-to-top characterization parameter
0.6
0.3
3
°C/W
ψJB
Junction-to-board characterization parameter
11.5
15.4
47.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
4.8
3.5
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLY
IVM
VM operating supply current
VM = 5 V, xIN1 = 0 V, xIN2 = 0 V
1.7
3
mA
IVMQ
VM sleep mode supply current
VM = 5 V
1.6
2.5
μA
VUVLO
VM undervoltage lockout voltage
VM falling
2.6
V
VHYS
VM undervoltage lockout
hysteresis
90
mV
LOGIC-LEVEL INPUTS
VIL
Input low voltage
VIH
Input high voltage
VHYS
Input hysteresis
RPD
Input pulldown resistance
IIL
Input low current
IIH
Input high current
tDEG
Input deglitch time
nSLEEP
0.5
All other pins
0.7
nSLEEP
2.5
All other pins
V
2
0.4
nSLEEP
500
All except nSLEEP
150
VIN = 0
V
kΩ
1
VIN = 3.3 V, nSLEEP
VIN = 3.3 V, all except nSLEEP
V
6.6
13
16.5
33
450
μA
μA
ns
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL
Output low voltage
IO = 5 mA
IOH
Output high leakage current
VO = 3.3 V
0.5
V
1
μA
H-BRIDGE FETs
VM = 5 V, I
HS FET on resistance
O
= 500 mA, TJ = 25°C
200
VM = 5 V, IO = 500 mA, TJ = 85°C
325
VM = 2.7 V, I O = 500 mA, TJ = 25°C
250
VM = 2.7 V, IO = 500 mA, TJ = 85°C
RDS(ON)
VM = 5 V, I
LS FET on resistance
350
O = 500 mA, TJ = 25°C
160
VM = 5 V, IO = 500 mA, TJ = 85°C
275
VM = 2.7 V, I O = 500 mA, TJ = 25°C
200
VM = 2.7 V, IO = 500 mA, TJ = 85°C
IOFF
Off-state leakage current
VM = 5 V, TJ = 25°C, VOUT = 0 V
mΩ
300
–1
1
μA
MOTOR DRIVER
ƒPWM
Current control PWM frequency
Internal PWM frequency
50
kHz
tR
Rise time
VM = 5 V, 16 Ω to GND, 10% to 90% VM
180
ns
tF
Fall time
VM = 5 V, 16 Ω to GND, 10% to 90% VM
160
ns
tPROP
Propagation delay INx to OUTx
VM = 5 V
1.1
µs
tDEAD
Dead time (1)
VM = 5 V
450
ns
PROTECTION CIRCUITS
IOCP
Overcurrent protection trip level
2
tDEG
OCP Deglitch time
4
tOCP
Overcurrent protection period
tTSD
Thermal shutdown temperature
(1)
6
3.3
A
µs
1.35
Die temperature
150
160
ms
180
°C
Internal dead time. External implementation is not necessary.
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Electrical Characteristics (continued)
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
200
240
mV
CURRENT CONTROL
VTRIP
xISEN trip voltage
tBLANK
Current sense blanking time
160
3.75
µs
SLEEP MODE
tWAKE
Start-up time
nSLEEP inactive high to H-bridge on
1
ms
6.6 Typical Characteristics
3.0
25.0
2.5
20.0
2.0
15.0
±40C
25°C
IVMQ (uA)
IVM (mA)
85°C
1.5
10.0
5.0
1.0
±40C
0.5
0.0
25°C
85°C
±5.0
0.0
2.7
3.6
4.5
5.4
6.3
7.2
8.1
9.0
9.9
2.7
10.8
VVM (V)
3.6
5.4
6.3
7.2
8.1
9.0
9.9
VVM (V)
10.8
C002
Figure 2. Sleep Current
Figure 1. Operating Current
800
800
2.7 V
700
5V
600
10.8 V
-40°C
700
RDS(ON) (HS + LS) (m)
RDS(ON) (HS + LS) (m)
4.5
C001
500
400
300
200
100
25°C
600
85°C
500
400
300
200
100
0
0
±40 ±30 ±20 ±10
0
10
20
30
40
50
Temperature (C)
60
70
80
2.7
C003
Figure 3. RDS(on) (HS + LS)
3.6
4.5
5.4
6.3
7.2
8.1
9.0
9.9
VVM (V)
10.8
C004
Figure 4. RDS(on) (HS + LS)
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7 Detailed Description
7.1 Overview
The DRV8833 device is an integrated motor driver solution for brushed DC or bipolar stepper motors. The device
integrates two NMOS H-bridges and current regulation circuitry. The DRV8833 can be powered with a supply
voltage from 2.7 to 10.8 V and can provide an output current up to 1.5-A RMS.
A simple PWM interface allows easy interfacing to the controller circuit.
The current regulation is a fixed frequency PWM slow decay.
The device includes a low-power sleep mode, which lets the system save power when not driving the motor.
7.2 Functional Block Diagram
2.2uF
VINT
VM
VM
VM
10uF
Internal
Ref &
Regs
Charge
Pump
VCP
0.01uF
VM
Drives 2x DC motor
or 1x Stepper
AOUT1
Gate
Drive
&
OCP
AIN1
AIN2
DCM
VM
Step
Motor
AOUT2
BIN1
BIN2
AISEN
ISEN
Logic
VM
nSLEEP
BOUT1
nFAULT
Gate
Drive
&
OCP
OverTemp
DCM
VM
BOUT2
BISEN
ISEN
GND
8
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7.3 Feature Description
7.3.1 Fixed-Frequency PWM Motor Drivers
DRV8833 contains two identical H-bridge motor drivers with current-control PWM circuitry. Figure 5 shows a
block diagram of the circuitry.
VM
OCP
VM
VCP, VINT
xOUT1
xIN1
Predrive
DCM
xOUT 2
xIN2
PWM
OCP
xISEN
+
Optional
REF (200mV)
Figure 5. Motor Control Circuitry
7.3.2 Bridge Control and Decay Modes
The AIN1 and AIN2 input pins control the state of the AOUT1 and AOUT2 outputs; similarly, the BIN1 and BIN2
input pins control the state of the BOUT1 and BOUT2 outputs. Table 1 shows the logic.
Table 1. H-Bridge Logic
xIN1
xIN2
xOUT1
xOUT2
FUNCTION
0
0
Z
Z
Coast/fast
decay
0
1
L
H
Reverse
1
0
H
L
Forward
L
Brake/slow
decay
1
1
L
The inputs can also be used for PWM control of the motor speed. When controlling a winding with PWM, when
the drive current is interrupted, the inductive nature of the motor requires that the current must continue to flow.
This is called recirculation current. To handle this recirculation current, the H-bridge can operate in two different
states: fast decay or slow decay. In fast decay mode, the H-bridge is disabled and recirculation current flows
through the body diodes; in slow decay, the motor winding is shorted.
To PWM using fast decay, the PWM signal is applied to one xIN pin while the other is held low; to use slow
decay, one xIN pin is held high.
Table 2. PWM Control of Motor Speed
xIN1
xIN2
FUNCTION
PWM
0
Forward PWM, fast decay
1
PWM
Forward PWM, slow decay
0
PWM
Reverse PWM, fast decay
PWM
1
Reverse PWM, slow decay
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Figure 6 shows the current paths in different drive and decay modes.
VM
VM
1 Forward drive
1
xOUT2
xOUT1
1 Reverse drive
1
2 Fast decay
3 Slow decay
xOUT1
2
2
3
3
FORWARD
2 Fast decay
xOUT2
3 Slow decay
REVERSE
Figure 6. Drive and Decay Modes
7.3.3 Current Control
The current through the motor windings may be limited, or controlled, by a fixed-frequency PWM current
regulation, or current chopping. For DC motors, current control is used to limit the start-up and stall current of the
motor. For stepper motors, current control is often used at all times.
When an H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage and
inductance of the winding. If the current reaches the current chopping threshold, the bridge disables the current
until the beginning of the next PWM cycle. Immediately after the current is enabled, the voltage on the xISEN pin
is ignored for a fixed period of time before enabling the current sense circuitry. This blanking time is fixed at 3.75
μs. This blanking time also sets the minimum on time of the PWM when operating in current chopping mode.
The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor
connected to the xISEN pins with a reference voltage. The reference voltage is fixed at 200 mV.
The chopping current is calculated in Equation 1.
200 mV
ICHOP
RISENSE
(1)
Example: If a 1-Ω sense resistor is used, the chopping current will be 200 mV/1 Ω = 200 mA.
Once the chopping current threshold is reached, the H-bridge switches to slow decay mode. Winding current is
recirculated by enabling both of the low-side FETs in the bridge. This state is held until the beginning of the next
fixed-frequency PWM cycle.
If current control is not needed, the xISEN pins should be connected directly to ground.
10
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7.3.4 nSLEEP Operation
Driving nSLEEP low will put the device into a low power sleep state. In this state, the H-bridges are disabled, the
gate drive charge pump is stopped, all internal logic is reset, and all internal clocks are stopped. All inputs are
ignored until nSLEEP returns inactive high. When returning from sleep mode, some time (up to 1 ms) needs to
pass before the motor driver becomes fully operational. To make the board design simple, the nSLEEP can be
pulled up to the supply (VM). TI recommends using a pullup resistor when this is done. This resistor limits the
current to the input in case VM is higher than 6.5 V. Internally, the nSLEEP pin has a 500-kΩ resistor to GND. It
also has a clamping Zener diode that clamps the voltage at the pin at 6.5 V. Currents greater than 250 µA can
cause damage to the input structure. Hence the recommended pullup resistor would be between 20 kΩ and
75 kΩ.
7.3.5 Protection Circuits
The DRV8833 is fully protected against undervoltage, overcurrent and overtemperature events.
7.3.5.1 Overcurrent Protection (OCP)
An analog current limit circuit on each FET limits the current through the FET by limiting the gate drive. If this
analog current limit persists for longer than the OCP deglitch time, all FETs in the H-bridge will be disabled and
the nFAULT pin will be driven low. The driver will be re-enabled after the OCP retry period (tOCP) has passed.
nFAULT becomes high again at this time. If the fault condition is still present, the cycle repeats. If the fault is no
longer present, normal operation resumes and nFAULT remains deasserted. Please note that only the H-bridge
in which the OCP is detected will be disabled while the other bridge will function normally.
Overcurrent conditions are detected independently on both high- and low-side devices; that is, a short to ground,
supply, or across the motor winding will all result in an overcurrent shutdown. Overcurrent protection does not
use the current sense circuitry used for PWM current control, so it functions even without presence of the xISEN
resistors.
7.3.5.2 Thermal Shutdown (TSD)
If the die temperature exceeds safe limits, all FETs in the H-bridge will be disabled and the nFAULT pin will be
driven low. Once the die temperature has fallen to a safe level, operation will automatically resume.
7.3.5.3 Undervoltage Lockout (UVLO)
If at any time the voltage on the VM pin falls below the undervoltage lockout threshold voltage, all circuitry in the
device will be disabled, and all internal logic will be reset. Operation will resume when VM rises above the UVLO
threshold. nFAULT is driven low in the event of an undervoltage condition.
Table 3. Device Protection
FAULT
CONDITION
ERROR REPORT
H-BRIDGE
INTERNAL
CIRCUITS
RECOVERY
VM undervoltage
(UVLO)
VM < 2.5 V
None
Disabled
Disabled
VM > 2.7 V
Overcurrent (OCP)
IOUT > IOCP
FAULTn
Disabled
Operating
OCP
Thermal Shutdown
(TSD)
TJ > TTSD
FAULTn
Disabled
Operating
TJ < TTSD – THYS
7.4 Device Functional Modes
The DRV8833 is active unless the nSLEEP pin is brought logic low. In sleep mode, the H-bridge FETs are
disabled (Hi-Z). The DRV8833 is brought out of sleep mode automatically if nSLEEP is brought logic high.
tWAKE must elapse before the outputs change state after wakeup.
Table 4. Modes of Operation
FAULT
CONDITION
H-BRIDGE
INTERNAL CIRCUITS
Operating
Operating
nSLEEP pin high
Operating
Sleep mode
nSLEEP pin low
Disabled
Disabled
Fault encountered
Any fault condition met
Disabled
See Table 3
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV8833 is used in brushed DC or stepper motor control. The following design procedure can be used to
configure the DRV8833 in a brushed DC motor application. The inputs and outputs are connected in parallel to
achieve higher current.
8.2 Typical Application
The two H-bridges in the DRV8833 can be connected in parallel for double the current of a single H-bridge. The
internal dead time in the DRV8833 prevents any risk of cross-conduction (shoot-through) between the two
bridges due to timing differences between the two bridges. Figure 7 shows the connections.
VM
IN1
IN2
12
16
AIN1
15
AIN2
9
BIN1
10
BIN2
1
VCP
C1
0.01uF
11
2
AOUT1 4
AOUT2
7
BOUT1
BOUT2 5
NSLEEP
NFAULT
PP
GNDP
13
GND
LOW = SLEEP, HIGH = RUN
C4 +
10uF
VM
U1
DRV8833
From Controller
M
8
14
VINT
AISEN 3
BISEN 6
C2
2.2uF
R2
200m
Figure 7. Parallel Mode
8.2.1 Design Requirements
Table 5. Design Parameters
DESIGN PARAMETER
REFERENCE
EXAMPLE VALUE
Motor voltage
VM
10 V
0.8 A
Motor RMS current
IRMS
Motor start-up current
ISTART
2A
Motor current trip point
ITRIP
2.5 A
8.2.2 Detailed Design Procedure
8.2.2.1 Motor Voltage
The motor voltage to use will depend on the ratings of the motor selected and the desired RPM. A higher voltage
spins a brushed DC motor faster with the same PWM duty cycle applied to the power FETs. A higher voltage
also increases the rate of current change through the inductive motor windings.
12
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8.2.2.2 Motor Current Trip Point
When the voltage on pin xISEN exceeds VTRIP (0.2 V), current regulation is activated. The RISENSE resistor should
be sized to set the desired ICHOP level.
RISENSE = 0.2 V / ICHOP
(2)
To set ICHOP to 1 A, RSENSE = 0.2 V / 1 A = 0.2 Ω.
8.2.2.3 Sense Resistor
For optimal performance, it is important for the sense resistor to be:
• Surface-mount
• Low inductance
• Rated for high enough power
• Placed closely to the motor driver
The power dissipated by the sense resistor equals IRMS2 × R. For example, if peak motor current is 3 A, RMS
motor current is 2 A, and a 0.05-Ω sense resistor is used, the resistor will dissipate 2 A2× 0.05 Ω = 0.2 W. The
power quickly increases with higher current levels.
Resistors typically have a rated power within some ambient temperature range, along with a derated power curve
for high ambient temperatures. When a PCB is shared with other components generating heat, margin should be
added. For best practice, measure the actual sense resistor temperature in a final system, along with the power
MOSFETs, as those are often the hottest components.
Because power resistors are larger and more expensive than standard resistors, the common practice is to use
multiple standard resistors in parallel, between the sense node and ground. This distributes the current and heat
dissipation.
8.2.3 Application Curve
Figure 8. Current Regulation
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9 Power Supply Recommendations
9.1 Bulk Capacitance
Having an appropriate local bulk capacitance is an important factor in motor drive system design. It is generally
beneficial to have more bulk capacitance, while the disadvantages are increased cost and physical size.
The amount of local capacitance needed depends on a variety of factors, including:
• The highest current required by the motor system
• The capacitance and ability to source current
• The amount of parasitic inductance between the power supply and motor system
• The acceptable voltage ripple
• The type of motor used (brushed DC, brushless DC, stepper)
• The motor braking method
The inductance between the power supply and the motor drive system limits the rate current can change from
the power supply. If the local bulk capacitance is too small, the system responds to excessive current demands
or dumps from the motor with a change in voltage. When adequate bulk capacitance is used, the motor voltage
remains stable and high current can be quickly supplied.
The data sheet generally provides a recommended value, but system-level testing is required to determine the
appropriate sized bulk capacitor.
Power Supply
Parasitic Wire
Inductance
Motor Drive System
VM
+
+
±
Motor
Driver
GND
Local
Bulk Capacitor
IC Bypass
Capacitor
Figure 9. Example Setup of Motor Drive System With External Power Supply
The voltage rating for bulk capacitors should be higher than the operating voltage, to provide margin for cases
when the motor transfers energy to the supply.
9.2 Power Supply and Logic Sequencing
There is no specific sequence for powering up the DRV8833. The presence of digital input signals is acceptable
before VM is applied. After VM is applied to the DRV8833, the device begins operation based on the status of
the control pins.
14
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10 Layout
10.1 Layout Guidelines
The VM pin should be bypassed to GND using low-ESR ceramic bypass capacitors with a recommended value
of 10-μF rated for VM. This capacitor should be placed as close to the VM pin as possible with a thick trace or
ground plane connection to the device GND pin.
A low-ESR ceramic capacitor must be placed in between the VM and VCP pins. TI recommends a value of 0.01μF rated for 16 V. Place this component as close to the pins as possible.
Bypass VINT to ground with a 2.2-μF ceramic capacitor rated 6.3 V. Place this bypass capacitor as close to the
pin as possible.
10.1.1 Heatsinking
The PowerPAD package uses an exposed pad to remove heat from the device. For proper operation, this pad
must be thermally connected to copper on the PCB to dissipate heat. On a multilayer PCB with a ground plane,
this can be accomplished by adding a number of vias to connect the thermal pad to the ground plane. On PCBs
without internal planes, copper area can be added on either side of the PCB to dissipate heat. If the copper area
is on the opposite side of the PCB from the device, thermal vias are used to transfer the heat between top and
bottom layers.
For details about how to design the PCB, refer to TI application report, PowerPAD™ Thermally Enhanced
Package (SLMA002) and TI application brief, PowerPAD™ Made Easy (SLMA004), available at www.ti.com.
In general, the more copper area that can be provided, the more power can be dissipated.
NOTE
The PW package option is not thermally enhanced and TI recommends adhering to the
power dissipation limits.
10.2 Layout Example
nSLEEP
AIN1
AOUT1
AIN2
AISEN
VINT
AOUT2
GND
BOUT2
VM
BISEN
VCP
BOUT1
BIN2
nFAULT
BIN1
2.2 µF
RAISEN
.01 µF
RBISEN
10 µF
Figure 10. Recommended Layout Example
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10.3 Thermal Considerations
10.3.1 Maximum Output Current
In actual operation, the maximum output current achievable with a motor driver is a function of die temperature.
This, in turn, is greatly affected by ambient temperature and PCB design. Basically, the maximum motor current
will be the amount of current that results in a power dissipation level that, along with the thermal resistance of the
package and PCB, keeps the die at a low enough temperature to stay out of thermal shutdown.
The dissipation ratings given in the data sheet can be used as a guide to calculate the approximate maximum
power dissipation that can be expected to be possible without entering thermal shutdown for several different
PCB constructions. However, for accurate data, the actual PCB design must be analyzed through measurement
or thermal simulation.
10.3.2 Thermal Protection
The DRV8833 has thermal shutdown (TSD) as described above. If the die temperature exceeds approximately
150°C, the device will be disabled until the temperature drops by 45°C.
Any tendency of the device to enter TSD is an indication of either excessive power dissipation, insufficient
heatsinking, or too high an ambient temperature.
10.4 Power Dissipation
Power dissipation in the DRV8833 is dominated by the DC power dissipated in the output FET resistance, or
RDS(ON). There is additional power dissipated due to PWM switching losses, which are dependent on PWM
frequency, rise and fall times, and VM supply voltages. These switching losses are typically on the order of 10%
to 30% of the DC power dissipation.
The DC power dissipation of one H-bridge can be roughly estimated by Equation 3.
3TOT +6 ± 5DS(ON) u ,OUT(RMS)2 /6 ± 5DS(ON) u ,OUT(RMS)2
where
•
•
•
•
PTOT is the total power dissipation
HS - RDS(ON) is the resistance of the high-side FET
LS - RDS(ON) is the resistance of the low-side FET
IOUT(RMS) is the RMS output current being applied to the motor
(3)
RDS(ON) increases with temperature, so as the device heats, the power dissipation increases. This must be taken
into consideration when sizing the heatsink.
16
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• PowerPAD™ Thermally Enhanced Package, SLMA002
• PowerPAD™ Made Easy, SLMA004
• Current Recirculation and Decay Modes, SLVA321
• Calculating Motor Driver Power Dissipation, SLVA504
• Understanding Motor Driver Current Ratings, SLVA505
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DRV8833PW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
8833PW
DRV8833PWP
ACTIVE
HTSSOP
PWP
16
90
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
DRV8833
DRV8833PWPR
ACTIVE
HTSSOP
PWP
16
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
DRV8833
DRV8833PWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
8833PW
DRV8833RTYR
ACTIVE
QFN
RTY
16
3000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
DRV8833
DRV8833RTYT
ACTIVE
QFN
RTY
16
250
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
DRV8833
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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