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DS14C88
Quad CMOS Line Driver
General Description
The DS14C88, pin-for-pin compatible to the DS1488/
MC1488, is a quad line drivers designed to interface data
terminal equipment (DTE) with data circuit-terminating
equipment (DCE). This device translates standard TTL/
CMOS logic levels to levels conforming to EIA-232-D and
CCITT V.28 standards.
The device is fabricated in low threshold CMOS metal gate
technology. The device provides very low power consumption compared to its bipolar equivalents: 500 µA (DS14C88)
versus 25 mA (DS1488).
The DS14C88 simplifies designs by eliminating the need for
external slew rate control capacitors. Slew rate control in
accordance with EIA-232D is provided on-chip, eliminating
the output capacitors.
Features
n
n
n
n
Meets EIA-232D and CCITT V.28 standards
LOW power consumption
Wide power supply range: ± 5V to ± 12V
Available in SOIC package
Connection Diagram
01110501
Order Number DS14C88N, or DS14C88M
See NS Package Number N14A or M14A
© 2004 National Semiconductor Corporation
DS011105
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DS14C88 Quad CMOS Line Driver
May 1998
DS14C88
Absolute Maximum Ratings (Note 1)
Lead Temperature
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature
Range
(Soldering 4 seconds)
Supply Voltage
V+ Pin
Recommended Operating
Conditions
−13V
Driver Input Voltage
Driver Output Voltage
+
(V ) +0.3V to GND
−0.3V
Min
|(V+) − VO| ≤ 30V
+
|(V−) − VO| ≤ 30V
Continuous Power Dissipation @+25˚C (Note 2)
N Package
1513 mW
M Package
1063 mW
Junction Temperature
−65˚C to +150˚C
This Product does not meet 2000V ESD rating. (Note 9)
+13V
V− Pin
+260˚C
Max Units
V Supply (GND = 0V)
+4.5 +12.6
V
V− Supply (GND = 0V)
−4.5 −12.6
V
Operating Free Air Temp.
(TA)
DS14C88
+150˚C
0
+75
˚C
Electrical Characteristics
Over Recommended Operating Conditions, unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
+10
µA
IIL
Maximum Low Input
Current
VIN = GND
IIH
Maximum High Input
Current
VIN = V+
VIL
Low Level Input Voltage
V+ ≥ +7V, V− ≤ −7V
GND
0.8
V+ < +7V, V− > −7V
GND
0.6
V
2.0
V+
V
VIH
High Level Input Voltage
VOL
Low Level Output Level
VOH
IOS+
High Level Output Level
High Level Output Short
−10
Low Level Output Short
V
VIN = VIH
V+ = 4.5V, V− = −4.5V
−4.0
−3.0
V
RL = 3 kΩ
V+ = 9V, V− = 9V
−8.0
−6.5
V
or 7 kΩ
V+ = 12V, V− = −12V
−10.5
−9.0
V
VIN = VIL
V+ = 4.5V, V− = −4.5V
+
−
3.0
4.0
V
V
RL = 3 kΩ
V = 9V, V = −9V
6.5
8.0
or 7 kΩ
V+ = 12V, V− = −12V
9.0
10.5
V+ = +12V,
VIN = 0.8V, VO = GND
V
−45
mA
V− = −12V
Circuit Current (Note 3)
IOS−
µA
VIN = 2.0V, VO = GND
+45
mA
Circuit Current (Note 3)
ROUT
Output Resistance
V+ = V− = GND = 0V
Ω
300
−2V ≤ VO ≤ +2V (Note 4) (Figure 1 )
ICC+
Positive Supply Current
VIN = VILmax
V+ = 4.5V, V− = −4.5V
10
µA
RL = OPEN
V+ = 9V, V− = −9V
30
µA
+
−
V = 12V, V = −12V
60
µA
VIN = VIHmin
V+ = 4.5V, V− = −4.5V
50
µA
RL = OPEN
V+ = 9V, V− = −9V
300
µA
+
ICC-
Negative Supply Current
VIN = VILmax
RL = OPEN
VIN = VIHmin
RL = OPEN
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−
V = 12V, V = −12V
500
µA
V+ = 4.5V, V− = −4.5V
−10
µA
V+ = 9V, V− = −9V
−10
µA
V+ = 12V, V− = −12V
−10
µA
V+ = 4.5V, V− = −4.5V
−30
µA
V+ = 9V, V− = −9V
−30
µA
V+ = 12V, V− = −12V
−60
µA
2
Over Recommended Operating Conditions, unless otheriwse specified (Figures 2, 3)
Symbol
tPLH
Parameter
Conditions
+
Low to High
tPHL
Min
V+ = +4.5V, V− = −4.5V
Propagation Delay
−
Typ
Max
Units
1.5
6.0
µs
V = +9.0V, V = −9.0V
1.2
5.0
µs
V+ = +12V, V− = −12V
1.2
4.0
µs
Propagation Delay
V+ = +4.5V, V− = −4.5V
1.5
6.0
µs
High to Low
V+ = +9.0V, V− = −9.0V
1.35
5.0
µs
1.3
4.0
µs
+
−
V = +12V, V = −12V
tr
Rise Time (Note 7)
0.2
1.0
µs
tf
Fall Time (Note 7)
0.2
1.0
µs
tsk
SR
+
−
Typical Propagation
V = +4.5V, V = −4.5V
250
ns
Delay Skew
V+ = +9.0V, V− = −9.0V
200
ns
V+ = +12V, V− = −12V
150
Output Slew Rate
RL = 3 kΩ to 7 kΩ
(Note 7)
CL = 15 pF to 2500 pF
ns
30
V/µs
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Note 2: Derate N Package 12.1 mW/˚C, and M Package 8.5 mW/˚C above +25˚C.
Note 3: IOS+ and IOS− values are for one output at a time. If more than one output is shorted simultaneously, the device dissipation may be exceeded.
Note 4: Power supply (V+, V−) and GND pins are connected to ground for the Output Resistance Test (RO).
Note 5: AC input test waveforms for test purposes: tr = tf ≤ 20 ns, VIH = 2V, VIL = 0.8V (0.6V at V+ = 4.5V, V− = −4.5V)
Note 6: Input rise and rall times must not exceed 5 µs.
Note 7: The output slew rate, rise time, and fall time are measured from the +3.0V to the −3.0V level on the output waveform.
Note 8: CL include jig and probe capacitances.
Note 9: ESD Rating (HBM, 1.5 kΩ, 100 pF) ≥ 1.0 kV.
Parameter Measure Information
01110502
FIGURE 1. Output Resistance Test Circuit (Power-Off)
01110503
FIGURE 2. Driver Load Circuit (Note 8)
3
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DS14C88
Switching Characteristics (Notes 5, 6)
DS14C88
Parameter Measure Information
(Continued)
01110504
FIGURE 3. Driver Switching Waveform
Typical Application Information
01110505
FIGURE 4. EIA-232D Data Transmission
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4
DS14C88
Physical Dimensions
inches (millimeters)
unless otherwise noted
Order Number DS14C88M or DS14C88TM
NS Package Number M14A
Order Number DS14C88N or DS14C88TN
NS Package Number N14A
5
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DS14C88 Quad CMOS Line Driver
Notes
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whose failure to perform when properly used in
accordance with instructions for use provided in the
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significant injury to the user.
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support device or system whose failure to perform
can be reasonably expected to cause the failure of
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safety or effectiveness.
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