DS90CP02
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SNLS267A – NOVEMBER 2008 – REVISED MARCH 2013
DS90CP02 1.5 Gbps 2x2 LVDS Crosspoint Switch
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FEATURES
DESCRIPTION
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The DS90CP02 is a 1.5 Gbps 2 x 2 LVDS crosspoint
switch optimized for high-speed signal routing and
switching over lossy FR-4 printed circuit board
backplanes and balanced cables. Fully differential
signal paths ensure exceptional signal integrity and
noise immunity. The non-blocking architecture allows
connections of any input to any output or outputs.
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2
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1.5 Gbps per Channel
Low Power: 70 mA in Dual Repeater Mode
@1.5 Gbps
Low Output Jitter
Non-Blocking Architecture Allows 1:2 Splitter,
2:1 Mux, Crossover, and Dual Buffer
Configurations
Flow-Through Pinout
LVDS/BLVDS/CML/LVPECL Inputs, LVDS
Outputs
Single 3.3V Supply
Separate Control of Inputs and Outputs Allows
for Power Savings
Industrial -40 to +85°C Temperature Range
28-lead UQFN-28 Space Saving Package
Wide input common mode range allows the switch to
accept signals with LVDS, CML and LVPECL levels;
the output levels are LVDS. A very small package
footprint requires a minimal space on the board while
the flow-through pinout allows easy board layout. The
3.3V supply, CMOS process, and LVDS I/O ensure
high performance at low power over the entire
industrial -40 to +85°C temperature range.
Block Diagram
2:1 Mux1
IN0+
OUT0+
OUT0-
2:1 Mux2
IN0-
IN1+
OUT1+
OUT1-
IN1-
SEL0
Control
Logic
SEL1
EN0
EN1
Figure 1. DS90CP02 Block Diagram
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2013, Texas Instruments Incorporated
DS90CP02
SNLS267A – NOVEMBER 2008 – REVISED MARCH 2013
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Table 1. PIN DESCRIPTIONS
Pin
Name
Pin
Number
I/O, Type
Description
DIFFERENTIAL INPUTS COMMON TO ALL MUXES
IN0+
IN0−
9
10
I, LVDS
Inverting and non-inverting differential inputs. LVDS, Bus LVDS, CML, or LVPECL
compatible.
IN1+
IN1−
12
13
I, LVDS
Inverting and non-inverting differential inputs. LVDS, Bus LVDS, CML, or LVPECL
compatible.
SWITCHED DIFFERENTIAL OUTPUTS
OUT0+
OUT0−
27
26
O, LVDS
Inverting and non-inverting differential outputs. OUT0± can be connected to any one pair
IN0±, or IN1±. LVDS compatible .
OUT1+
OUT1−
24
23
O, LVDS
Inverting and non-inverting differential outputs. OUT1± can be connected to any one pair
IN0±, or IN1±. LVDS compatible .
DIGITAL CONTROL INTERFACE
SEL0, SEL1
6
5
I, LVTTL
Select Control Inputs
EN0, EN1
7
15
I, LVTTL
Output Enable Inputs
N/C
8, 20, 28
Not Connected
POWER
VDD
11, 14, 16,
18, 19, 22,
25
I, Power
VDD = 3.3V ±0.3V. At least 4 low ESR 0.01 µF bypass capacitors should be connected from
VDD to GND plane.
GND
DAP, 1, 2,
3, 4, 17,
21
I, Power
Ground reference to LVDS and CMOS circuitry.
For the UQFN package, the DAP is used as the primary GND connection to the device.
The DAP is the exposed metal contact at the bottom of the UQFN-28 package. It should be
connected to the ground plane with at least 4 vias for optimal AC and thermal performance.
EN0
SEL0
SEL1
GND
GND
GND
GND
Connection Diagram
7
6
5
4
3
2
1
N/C
8
28
N/C
IN0+
9
27
OUT0+
IN0-
10
26
OUT0-
25
VDDA
DAP
(GND)
VDDA
11
IN1+
12
24
OUT1+
IN1-
13
23
OUT1-
VDD
14
22
VDD
N/C
GND
VDD
VDD
GND
VDD
EN1
15 16 17 18 19 20 21
Figure 2. UQFN Top View
DAP = GND
See Package Number NJD0028A
2
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SNLS267A – NOVEMBER 2008 – REVISED MARCH 2013
Configuration Select Truth Table
SEL0
SEL1
EN0
EN1
OUT0
OUT1
0
0
0
0
IN0
IN0
1:2 Splitter (IN1 powered down)
Mode
0
1
0
0
IN0
IN1
Dual Channel Repeater
1
0
0
0
IN1
IN0
Dual Channel Switch
1
1
0
0
IN1
IN1
1:2 Splitter (IN0 powered down)
0
1
0
1
IN0
PD
Single Channel Repeater (Channel 1 powered down)
1
1
0
1
IN1
PD
Single Channel Switch (IN0 and OUT1 powered down)
0
0
1
0
PD
IN0
Single Channel Switch (IN1 and OUT0 powered down)
0
1
1
0
PD
IN1
Single Channel Repeater (Channel 0 powered down)
X
X
1
1
PD
PD
Both Channels in Power Down Mode
0
0
0
1
Invalid State*
1
0
0
1
Invalid State*
1
0
1
0
Invalid State*
1
1
1
0
Invalid State*
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DS90CP02
SNLS267A – NOVEMBER 2008 – REVISED MARCH 2013
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APPLICATION INFORMATION
Dual Channel Repeater
(SEL0=0, SEL1=1, EN0=0, EN1=0)
1:2 Splitter
(SEL0=0, SEL1=0, EN0=0, EN1=0)
IN0+
OUT0+
IN0+
OUT0+
IN0-
OUT0-
IN0-
OUT0-
IN1+
OUT1+
IN1+
OUT1+
IN1-
OUT1-
IN1-
OUT1-
1:2 Splitter
(SEL0=1, SEL1=1, EN0=0, EN1=0)
Dual Channel Switch
(SEL0=1, SEL1=0, EN0=0, EN1=0)
IN0+
OUT0+
IN0+
OUT0+
IN0-
OUT0-
IN0-
OUT0-
IN1+
OUT1+
IN1+
OUT1+
IN1-
OUT1-
IN1-
OUT1-
Single Channel Repeater
(SEL0=0, SEL1=1, EN0=0, EN1=1)
Single Channel Crossover Switch
(SEL0=0, SEL1=0, EN0=1, EN1=0)
IN0+
OUT0+
IN0+
OUT0+
IN0-
OUT0-
IN0-
OUT0-
IN1+
OUT1+
IN1+
OUT1+
IN1-
OUT1-
IN1-
OUT1-
Single Channel Crossover Switch
(SEL0=1, SEL1=1, EN0=0, EN1=1)
Single Channel Repeater
(SEL0=0, SEL1=1, EN0=1, EN1=0)
IN0+
OUT0+
IN0+
OUT0+
IN0-
OUT0-
IN0-
OUT0-
IN1+
OUT1+
IN1+
OUT1+
IN1-
OUT1-
IN1-
OUT1-
Figure 3. DS90CP02 Configuration Select Decode
4
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SNLS267A – NOVEMBER 2008 – REVISED MARCH 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
Supply Voltage (VDD)
−0.3V to +4.0V
CMOS Input Voltage
−0.3V to (VDD +0.3V)
LVDS Receiver Input Voltage
−0.3V to +3.6V
LVDS Driver Output Voltage
−0.3V to +3.6V
LVDS Output Short Circuit Current
40mA
Junction Temperature
+150°C
Storage Temperature
−65°C to +150°C
Lead Temperature
(Soldering, 4sec.)
+260°C
Maximum Package Power Dissipation at 25°C
UQFN-28
4.31 W
Derating above 25°C
UQFN-28
34.5 mW/°C
Thermal Resistance, θJA
UQFN-28
29°C/W
ESD Rating
(1)
(2)
HBM, 1.5 kΩ, 100 pF
6.5 kV
EIAJ, 0Ω, 200 pF
>250V
“Absolute Maximum Ratings” are the ratings beyond which the safety of the device cannot be guaranteed. They are not meant to imply
that the device should be operated at these limits.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Recommended Operating Conditions
Supply Voltage (VDD– GND)
Receiver Input Voltage
Operating Free Air Temperature
Min
Typ
Max
Unit
3.0
3.3
3.6
V
3.6
V
85
°C
150
°C
0
−40
Junction Temperature
25
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Electrical Characteristics
Over recommended operating supply and temperature ranges unless other specified.
Symbol
Parameter
Conditions
Min
Typ
(1)
Max
Units
LVTTL DC SPECIFICATIONS (SEL0, SEL1, EN1, EN2)
VIH
High Level Input Voltage
2.0
VDD
V
VIL
Low Level Input Voltage
GND
0.8
V
IIH
High Level Input Current
VIN = VDD = VDDMAX
−10
+10
µA
IIL
Low Level Input Current
VIN = VSS, VDD = VDDMAX
−10
+10
µA
CIN1
Input Capacitance
Any Digital Input Pin to VSS
VCL
Input Clamp Voltage
ICL = −18 mA
−1.5
3.5
pF
−0.8
V
LVDS INPUT DC SPECIFICATIONS (IN0±, IN1±)
(2)
VTH
Differential Input High Threshold
VTL
Differential Input Low Threshold
VCM = 0.8V or 1.2V or 3.55V, VDD = 3.6V
VCM = 0.8V or 1.2V or 3.55V, VDD = 3.6V
0
VID
Differential Input Voltage
VCM = 0.8V to 3.55V, VDD = 3.6V
100
VCMR
Common Mode Voltage Range
VID = 150 mV, VDD = 3.6V
0.05
CIN2
Input Capacitance
IN+ or IN− to VSS
IIN
Input Current
VIN = 3.6V, VDD = VDDMAX or 0V
−10
+10
µA
VIN = 0V, VDD = VDDMAX or 0V
−10
+10
µA
575
mV
35
mV
1.475
V
35
mV
-90
mA
−100
100
0
mV
mV
mV
3.55
3.5
V
pF
LVDS OUTPUT DC SPECIFICATIONS (OUT0±, OUT1±)
VOD
Differential Output Voltage,
0% Pre-emphasis (2)
RL = 100Ω between OUT+ and OUT−
ΔVOD
Change in VOD between
Complementary States
VOS
Offset Voltage
ΔVOS
Change in VOS between
Complementary States
IOS
Output Short Circuit Current, One
Complementary Output
OUT+ or OUT− Short to GND
COUT
Output Capacitance
OUT+ or OUT− to GND when TRISTATE
5.5
All inputs and outputs enabled and
active, terminated with differential load of
100Ω between OUT+ and OUT-.
42
60
mA
250
400
−35
(3)
1.09
1.25
−35
−60
pF
SUPPLY CURRENT (Static)
ICC0
Supply Current
ICC1
Supply Current - one channel
powered down
Single channel crossover switch or single
channel repeater modes (1 channel
active, one channel in power down mode)
22
30
mA
ICC2
Supply Current - one input powered
down
Splitter mode (One input powered down,
both outputs active)
30
40
mA
ICCZ
TRI-STATE Supply Current
Both input/output Channels in Power
Down Mode
1.4
2.5
mA
70
150
215
ps
50
135
180
ps
0.5
2.4
3.5
ns
0.5
2.4
3.5
ns
55
120
ps
SWITCHING CHARACTERISTICS—LVDS OUTPUTS (Figure 4, Figure 5)
tLHT
Differential Low to High Transition
Time
tHLT
Differential High to Low Transition
Time
tPLHD
Differential Low to High Propagation
Delay
tPHLD
Differential High to Low Propagation
Delay
tSKD1
Pulse Skew
(1)
(2)
(3)
6
Use an alternating 1 and 0 pattern at 200
Mb/s, measure between 20% and 80% of
VOD.
Use an alternating 1 and 0 pattern at 200
Mb/s, measure at 50% VOD between
input to output.
|tPLHD–tPHLD|
Typical parameters are measured at VDD = 3.3V, TA = 25°C. They are for reference purposes, and are not production-tested.
Differential output voltage VOD is defined as ABS(OUT+–OUT−). Differential input voltage VID is defined as ABS(IN+–IN−).
Output offset voltage VOS is defined as the average of the LVDS single-ended output voltages at logic high and logic low states.
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Electrical Characteristics (continued)
Over recommended operating supply and temperature ranges unless other specified.
Symbol
tSKCC
tJIT
Parameter
Output Channel to Channel Skew
Jitter
(4)
Conditions
Min
Difference in propagation delay (tPLHD or
tPHLD) among all output channels in
Splitter mode (any one input to all
outputs).
0
(1)
Max
Units
130
315
ps
1.4
2.5
psrms
DJ - K28.5 Pattern
1.5 Gbps (6)
42
75
psp-p
TJ - PRBS 223-1 Pattern
1.5 Gbps (7)
93
126
psp-p
110
150
ns
5
12
ns
110
150
ns
RJ - Clock Pattern
750 MHz (5)
tON
LVDS Output Enable Time
Time from ENx to OUT± change from
TRI-STATE to active.
tOFF
LVDS Output Disable Time
Time from ENx to OUT± change from
active to TRI-STATE.
tSW
LVDS Switching Time
SELx to OUT±
Time from configuration select (SELx) to
new switch configuration effective for
OUT±.
(4)
(5)
(6)
(7)
Typ
50
Jitter is not production tested, but guaranteed through characterization on a sample basis.
Random Jitter, or RJ, is measured RMS with a histogram including 1500 histogram window hits. The input voltage = VID = 500mV, 50%
duty cycle at 750MHz, tr = tf = 50ps (20% to 80%).
Deterministic Jitter, or DJ, is measured to a histogram mean with a sample size of 350 hits. The input voltage = VID = 500mV, K28.5
pattern at 1.5 Gbps, tr = tf = 50ps (20% to 80%). The K28.5 pattern is repeating bit streams of (0011111010 1100000101).
Total Jitter, or TJ, is measured peak to peak with a histogram including 3500 window hits. Stimulus and fixture jitter has been
subtracted. The input voltage = VID = 500mV, 223-1 PRBS pattern at 1.5 Gbps, tr = tf = 50ps (20% to 80%).
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Timing Diagrams
IN+
VOS=1.2V typical
IN-
IN+
VID
IN-
Figure 4. LVDS Signals
(OUT+ - OUT-)
80%
80%
0V
20%
20%
tLHT
tHLT
OUT+
VOD
OUT-
Figure 5. LVDS Output Transition Time
(IN+ - IN-)
0.0V
tPLHD
tPHLD
(OUT+ - OUT-)
0.0V
Figure 6. LVDS Output Propagation Delay
8
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Load Configuration "A"
Load Configuration "B"
LOAD or
SELx
tSW
tSW
OUT±
Configuration "B"
Configuration "A"
tOFF
tON
50%
OUT+
50%
1.2V
1.2V
OUT-
50%
50%
Figure 7. Configuration and Output Enable/Disable Timing
Typical Performance
Total Jitter (TJ)
vs.
Bit Data Rate
120
Total Jitter (TJ)
vs.
Temperature
120
VCM = 0.5V
115
100
110
80
60
VCM = 2.4V
40
TOTAL JITTER (ps)
TOTAL JITTER (ps)
VCM = 1.2V
105
100
VCM = 3.1V
95
90
85
20
80
0
0.5
0.7
0.9
1.1
1.3
75
-40
1.5
-20
0
20
40
60
80
TEMPERATURE (°C)
BIT DATA RATE (Gbps)
Total Jitter measured at 0V differential while running
a PRBS 223-1 pattern in single channel repeater mode.
VCC = 3.3V, TA = +25°C, VID = 0.5V
Figure 8.
Total Jitter measured at 0V differential while running
a PRBS 223-1 pattern in dual channel repeater mode.
VCC = 3.3V, VID = 0.5V, VCM = 1.2V, 1.5 Gbps data rate
Figure 9.
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REVISION HISTORY
Changes from Original (March 2013) to Revision A
•
10
Page
Changed layout of National Data Sheet to TI format ............................................................................................................ 9
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DS90CP02SP/NOPB
ACTIVE
UQFN
NJD
28
1000
RoHS & Green
SN
Level-3-260C-168 HR
-40 to 85
CP02SP
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of