EMB1412MY/NOPB

Product Folder Sample & Buy Support & Community Tools & Software Technical Documents EMB1412 SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014 EMB1412 MOSFET Gate Driver 1 Features 3 Description • The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type. 1 • • • • • • • • Compound CMOS and Bipolar Outputs Reduce Output Current Variation 7 A Sink/3 A Source Current Fast Propagation Times (25 ns Typical) Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device Supply Rail Under-Voltage Lockout Protection Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation Thermally Enhanced 8-Pin VSSOP Package Output Swings from VCC to VEE Which can be Negative Relative to Input Ground Device Information(1) PART NUMBER 2 Applications • • • • • Li-Ion Battery Management Systems Hybrid and Electric Vehicles Grid Storage 48 V Systems Supply UPS EMB1412 PACKAGE HVSSOP (8) BODY SIZE (NOM) 3.00 mm x 3.00 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. EMB1412 SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 4 4 4 4 4 Absolute Maximum Ratings ...................................... Handling Ratings ...................................................... Recommended Operating Conditions....................... Thermal Information ................................................. Electrical Characteristics........................................... 7 Detailed Description .............................................. 7 8 Layout ..................................................................... 8 7.1 Overview ................................................................... 7 8.1 Layout Guidelines ..................................................... 8 8.2 Thermal Performance .............................................. 8 9 Device and Documentation Support.................... 9 9.1 Trademarks ............................................................... 9 9.2 Electrostatic Discharge Caution ................................ 9 9.3 Glossary .................................................................... 9 10 Mechanical, Packaging, and Orderable Information ............................................................. 9 4 Revision History Changes from Revision A (May 2013) to Revision B Page • Added Handling Ratings Table .............................................................................................................................................. 4 • Changed layout of National Data Sheet to TI format. ............................................................................................................ 8 2 Submit Documentation Feedback Copyright © 2011–2014, Texas Instruments Incorporated Product Folder Links: EMB1412 EMB1412 www.ti.com SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014 5 Pin Configuration and Functions VSSOP (DGN) 8 Pins Top View IN_REF 1 8 N/C INB 2 7 OUT VEE 3 6 VCC IN 4 5 N/C Pin Functions PIN NAME DESCRIPTION APPLICATION INFORMATION 1 IN_REF Ground reference for control inputs Connect to power ground (VEE) for standard positive only output voltage swing. Connect to system logic ground when VEE is connected to a negative gate drive supply. 2 INB Inverting input pin TTL compatible thresholds. Connect to IN_REF when not used. 3 VEE Power ground for driver outputs Connect to either power ground or a negative gate drive supply for positive or negative voltage swing. 4 TTL compatible thresholds. Pull up to VCC when not used. IN Non-inverting input pin 5, 8 N/C Not internally connected 6 VCC Positive Supply voltage input Locally decouple to VEE. The decoupling capacitor should be located close to the chip. 7 OUT Gate drive output Capable of sourcing 3 A and sinking 7 A. Voltage swing of this output is from VEE to VCC. Exposed Pad Exposed Pad, underside of package Internally bonded to the die substrate. Connect to VEE ground pin for low thermal impedance. --- Submit Documentation Feedback Copyright © 2011–2014, Texas Instruments Incorporated Product Folder Links: EMB1412 3 EMB1412 SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings (1) MIN MAX UNIT VCC to VEE −0.3 15 V VCC to IN_REF −0.3 15 V IN/INB to IN_REF −0.3 15 V IN_REF to VEE −0.3 Maximum junction temperature (1) 5 V 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 Handling Ratings Tstg Storage temperature range V(ESD) (1) Electrostatic discharge MIN MAX UNIT –55 150 °C 2 kV Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT 125 °C −40 Operating Junction Temperature 6.4 Thermal Information EMB1412 THERMAL METRIC (1) VSSOP (DGN) UNIT 8 PINS RθJA Junction-to-ambient thermal resistance RθJCbot Junction-to-case (bottom) thermal resistance (1) (2) 60 (2) °C/W 4.7 For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. The primary goal of the thermal management is to maintain the integrated circuit (IC) junction temperature (TJ) below a specified limit to ensure reliable long term operation. The maximum TJ of IC components should be estimated in worst case operating conditions. The junction temperature can be calculated based on the power dissipated on the IC and the junction to ambient thermal resistance RθJA for the IC package in the application board and environment. The RθJA is not a given constant for the package and depends on the PCB design and the operating environment. 6.5 Electrical Characteristics TJ = −40°C to 125°C, VCC = 12 V, INB = IN_REF = VEE = 0 V, No Load on output, unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VCC VCC Operating Range VCC – IN_REF and VCC - VEE 3.5 14 UVLO VCC Under-voltage Lockout (rising) VCC – IN_REF 2.4 VCCH VCC Under-voltage Hysteresis 230 ICC VCC Supply Current 1.0 3.0 3.5 V V mV 2.0 mA CONTROL INPUTS VIH Logic High VIL Logic Low VthH High Threshold 1.3 VthL Low Threshold 0.8 HYS Input Hysteresis 4 2.3 V 0.8 V 1.75 2.3 V 1.35 2.0 400 Submit Documentation Feedback V mV Copyright © 2011–2014, Texas Instruments Incorporated Product Folder Links: EMB1412 EMB1412 www.ti.com SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014 Electrical Characteristics (continued) TJ = −40°C to 125°C, VCC = 12 V, INB = IN_REF = VEE = 0 V, No Load on output, unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IIL Input Current Low IN = INB = 0 V -1 0.1 1 µA IIH Input Current High IN = INB = VCC -1 0.1 1 µA OUTPUT DRIVER ROH Output Resistance High IOUT = -10 mA (1) 30 50 Ω ROL Output Resistance Low IOUT = 10 mA (1) 1.4 2.5 Ω ISOURCE Peak Source Current OUT = VCC/2, 200 ns pulsed current 3 A ISINK Peak Sink Current OUT = VCC/2, 200 ns pulsed current 7 A SWITCHING CHARACTERISTICS td1 Propagation Delay Time Low to High, IN/ INB rising ( IN to OUT) CLOAD = 2 nF 25 40 ns td2 Propagation Delay Time High to Low, IN / INB falling (IN to OUT) CLOAD = 2 nF 25 40 ns tr Rise time CLOAD = 2 nF 14 ns tf Fall time CLOAD = 2 nF 12 ns 500 mA 60 °C/W 4.7 °C/W LATCHUP PROTECTION AEC –Q100, METHOD 004 TJ = 150°C THERMAL RESISTANCE RθJA Junction to Ambient, 0 LFPM Air Flow VSSOP Package RθJC Junction to Case VSSOP Package (1) The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and Bipolar devices. 50% 50% INB tD2 tD1 OUTPUT 90% 10% tf tr Figure 1. (A) Inverting Submit Documentation Feedback Copyright © 2011–2014, Texas Instruments Incorporated Product Folder Links: EMB1412 5 EMB1412 SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014 www.ti.com 50% 50% IN tD1 tD2 90% OUTPUT 10% tr tf Figure 2. (B) Non-Inverting 6 Submit Documentation Feedback Copyright © 2011–2014, Texas Instruments Incorporated Product Folder Links: EMB1412 EMB1412 www.ti.com SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014 7 Detailed Description 7.1 Overview The EMB1412 is a high speed, high peak current (7 A) single channel MOSFET driver. The high peak output current of the EMB1412 will switch power MOSFETs on and off with short rise and fall times, thereby reducing switching losses considerably. The EMB1412 includes both inverting and non-inverting inputs that give the user flexibility to drive the MOSFET with either active low or active high logic signals. The driver output stage consists of a compound structure with MOS and bipolar transistor operating in parallel to optimize current capability over a wide output voltage and operating temperature range. The bipolar device provides high peak current at the critical Miller plateau region of the MOSFET VGS, while the MOS device provides rail-to-rail output swing. The totem pole output drives the MOSFET gate between the gate drive supply voltage VCC and the power ground potential at the VEE pin. The control inputs of the driver are high impedance CMOS buffers with TTL compatible threshold voltages. The negative supply of the input buffer is connected to the input ground pin IN_REF. An internal level shifting circuit connects the logic input buffers to the totem pole output drivers. The level shift circuit and separate input/output ground pins provide the option of single supply or split supply configurations. When driving the MOSFET gates from a single positive supply, the IN_REF and VEE pins are both connected to the power ground. The isolated input and output stage grounds provide the capability to drive the MOSFET to a negative VGS voltage for a more robust and reliable off state. In split supply configuration, the IN_REF pin is connected to the ground of the controller which drives the EMB1412 inputs. The VEE pin is connected to a negative bias supply that can range from the IN_REF potential to as low as 14 V below the VCC gate drive supply. For reliable operation, the maximum voltage difference between VCC and IN_REF or between VCC and VEE is 14 V. The minimum recommended operating voltage between VCC and IN_REF is 3.5 V. An Under-Voltage Lock Out (UVLO) circuit is included in the EMB1412 which senses the voltage difference between VCC and the input ground pin, IN_REF. When the VCC to IN_REF voltage difference falls below 2.8 V the driver is disabled and the output pin is held in the low state. The driver will resume normal operation when the VCC to IN_REF differential voltage exceeds 3 V. Submit Documentation Feedback Copyright © 2011–2014, Texas Instruments Incorporated Product Folder Links: EMB1412 7 EMB1412 SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014 www.ti.com 8 Layout 8.1 Layout Guidelines Attention must be given to board layout when using EMB1412. Some important considerations include: 1. A Low ESR/ESL capacitor must be connected close to the IC and between the VCC and VEE pins to support high peak currents being drawn from VCC during turn-on of the MOSFET. 2. Proper grounding is crucial. The driver needs a very low impedance path for current return to ground avoiding inductive loops. Two paths for returning current to ground are a) between EMB1412 IN_REF pin and the ground of the circuit that controls the driver inputs and b) between EMB1412 VEE pin and the source of the power MOSFET being driven. Both paths should be as short as possible to reduce inductance and be as wide as possible to reduce resistance. These ground paths should be distinctly separate to avoid coupling between the high current output paths and the logic signals that drive the EMB1412. With rise and fall times in the range of 10 to 30 nsec, care is required to minimize the lengths of current carrying conductors to reduce their inductance and EMI from the high di/dt transients generated when driving large capacitive loads. 3. If either channel is not being used, the respective input pin (IN or INB) should be connected to either VEE or VCC to avoid spurious output signals. 8.2 Thermal Performance The primary goal of the thermal management is to maintain the integrated circuit (IC) junction temperature (TJ) below a specified limit to ensure reliable long term operation. The maximum TJ of IC components should be estimated in worst case operating conditions. The junction temperature can be calculated based on the power dissipated on the IC and the junction to ambient thermal resistance RθJA for the IC package in the application board and environment. The RθJA is not a given constant for the package and depends on the PCB design and the operating environment. 8 Submit Documentation Feedback Copyright © 2011–2014, Texas Instruments Incorporated Product Folder Links: EMB1412 EMB1412 www.ti.com SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014 9 Device and Documentation Support 9.1 Trademarks All trademarks are the property of their respective owners. 9.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 9.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 10 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2011–2014, Texas Instruments Incorporated Product Folder Links: EMB1412 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) EMB1412MY/NOPB ACTIVE HVSSOP DGN 8 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SA3B EMB1412MYE/NOPB ACTIVE HVSSOP DGN 8 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SA3B (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of