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ISO721QDRQ1

ISO721QDRQ1

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC8_150MIL

  • 描述:

    DGTL ISO 4KV 1CH GEN PURP 8SOIC

  • 数据手册
  • 价格&库存
ISO721QDRQ1 数据手册
ISO721-Q1, ISO722-Q1 www.ti.com SLLS918C – JULY 2008 – REVISED JUNE 2013 3.3-V AND/OR 5-V HIGH-SPEED DIGITAL ISOLATORS Check for Samples: ISO721-Q1, ISO722-Q1 FEATURES 1 • • • • Qualified for Automotive Applications AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40ºC to 125ºC Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Classification Level C5 4000-V(peak) Isolation – UL 1577, IEC 60747-5-2 (VDE 0884, Rev 2), IEC 61010-1 – 50-kV/s Transient Immunity (Typ) Signaling Rate 0 Mbps to 100 Mbps – Low Propagation Delay – Low Pulse Skew (Pulse-Width Distortion) • • • • • Low-Power Sleep Mode High Electromagnetic Immunity Low Input Current Requirement Failsafe Output Drop-In Replacement for Most Optical and Magnetic Isolators DESCRIPTION The ISO72x-Q1 is a digital isolator with a logic input and output buffer separated by a silicon oxide (SiO2) insulation barrier. This barrier provides galvanic isolation of up to 4000 V. Used in conjunction with isolated power supplies, this device prevents noise currents on a data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuitry. The capacitive isolation barrier conditions, translates to a balanced signal, then differentiates a binary input signal. Across the isolation barrier, a differential comparator receives the logic-transition information, then sets or resets a flip-flop and the output circuit accordingly. A periodic update pulse sent across the barrier ensures the proper dc level of the output. On failure to receive this dc refresh pulse for more than 4 μs, the response of the device is as if the input is or not actively driven, and the failsafe circuit drives the output to a logic-high state. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2008–2013, Texas Instruments Incorporated ISO721-Q1, ISO722-Q1 SLLS918C – JULY 2008 – REVISED JUNE 2013 www.ti.com FUNCTION DIAGRAM DC Channel Isolation Barrier + _ OSC + PWM Vref Filter Pulse Width Demodulation _ + POR IN Input + Filter Carrier Detect BIAS POR + _ Vref Data MUX AC Detect 3-State Output Buffer _ OUT + AC Channel 2 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 ISO721-Q1, ISO722-Q1 www.ti.com SLLS918C – JULY 2008 – REVISED JUNE 2013 DESCRIPTION (CONTINUED) The symmetry of the dielectric and capacitor within the integrated circuitry provides for close capacitive matching and allows fast transient voltage changes between the input and output grounds without corrupting the output. The small capacitance and resulting time constant provide for fast operation with signaling rates(1) from 0 Mbps (dc) to 100 Mbps. The device requires two supply voltages of 3.3 V, 5 V, or any combination. All inputs are 5-V tolerant when supplied from a 3.3-V supply, and all outputs are 4-mA CMOS. The device has a TTL input threshold and a noise filter at the input that prevents transient pulses of up to 2 ns in duration from being passed to the output of the device. The ISO722-Q1 device includes an active-low output enable that, when driven to a high logic level, places the output in a high-impedance state and turns off internal bias circuitry to conserve power. The ISO72x-Q1 is characterized for operation over the ambient temperature range of –40°C to 125°C. (1) The signaling rate of a line is the number of voltage transitions that occur per second, expressed in the units bps (bits per second). VCC1 1 IN 2 VCC1 3 GND1 4 Isolation ISO721-Q1 D PACKAGE (TOP VIEW) 8 VCC2 7 GND2 6 OUT 5 GND2 VCC1 1 IN 2 VCC1 3 GND1 4 Isolation ISO722-Q1 D PACKAGE (TOP VIEW) 8 VCC2 7 EN 6 OUT 5 GND2 ORDERING AND PACKAGING INFORMATION For the most-current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. Table 1. REGULATORY INFORMATION VDE CSA UL Certified according to IEC 60747-5-2 Approved under CSA Component Acceptance Notice: CA-5A Recognized under 1577 Component Recognition Program (1) File Number: 40016131 File Number: 1698195 File Number: E181974 (1) Production tested ≥ 3000 VRMS for 1 second in accordance with UL 1577. Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 Submit Documentation Feedback 3 ISO721-Q1, ISO722-Q1 SLLS918C – JULY 2008 – REVISED JUNE 2013 www.ti.com ABSOLUTE MAXIMUM RATINGS (1) VCC Supply voltage (2), VCC1, VCC2 –0.5 V to 6 V VI Voltage at IN or OUT terminal –0.5 V to 6 V IO Output current TJ Maximum virtual-junction temperature ESD (1) (2) (3) (4) ±15 mA 170°C Human-Body Model Electrostatic discharge rating (3) ±2 kV Charged-Device Model (4) ±1 kV Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values. Vrms values are not listed in this publication. JEDEC Standard 22, Test Method A114-C.01 JEDEC Standard 22, Test Method C101 RECOMMENDED OPERATING CONDITIONS MIN MAX 3 5.5 VCC Supply voltage (1), VCC1, VCC2 IOH High-level output current IOL Low-level output current –4 tui Input pulse duration 10 VIH High-level input voltage (IN) VIL Low-level input voltage (IN) TA Operating free-air temperature TJ Operating virtual-junction temperature H External magnetic field intensity per IEC 61000-4-8 and IEC 61000-4-9 certification (1) 4 UNIT V mA mA ns 2 VCC V 0 0.8 V –40 125 °C See the Thermal Characteristics table 150 °C 1000 A/m For 5-V operation, VCC1 or VCC2 specification is from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 or VCC2 specification is from 3 V to 3.6 V. IEC 60747-5-2 INSULATION CHARACTERISTICS (1) over recommended operating conditions (unless otherwise noted) PARAMETER VIORM VPR RS Maximum working insulation voltage Input-to-output test voltage VIOTM TEST CONDITIONS Transient overvoltage Insulation resistance 4 UNIT 560 V After Input/Output Safety Test Subgroup 2/3 VPR = VIORM × 1.2, t = 10 s, Partial discharge < 5 pC 672 V Method a, VPR = VIORM × 1.6, Type and sample test with t = 10 s, Partial discharge < 5 pC 896 V Method b1, VPR = VIORM × 1.875, 100 % Production test with t = 1 s, Partial discharge < 5 pC 1050 V t = 60 s 4000 V 9 Ω VIO = 500 V at TS >10 Pollution degree (1) SPECIFICATIONS 2 Climatic Classification 40/125/21 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 ISO721-Q1, ISO722-Q1 www.ti.com SLLS918C – JULY 2008 – REVISED JUNE 2013 ELECTRICAL CHARACTERISTICS: VCC1 and VCC2 5-V (1) OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER ICC1 VCC1 supply current TEST CONDITIONS Quiescent VI = VCC or 0 V, No load 25 Mbps ISO722-Q1 Sleep Mode ICC2 VCC2 supply current 0.5 1 2 4 VI = VCC or 0 V, No load 8 12 10 14 IOH = -4 mA, See Figure 1 VCC – 0.8 4.6 IOH = –20 μA, See Figure 1 VCC – 0.1 5 High-level output voltage 0.2 0.4 IOL = 20 μA, See Figure 1 0 0.1 VI(HYS) Input voltage hysteresis IIH High-level input current IN at 2 V IIL Low-level input current IN at 0.8 V IOZ High-impedance output current CI Input capacitance to ground IN at VCC, VI = 0.4 sin (4E6πt) CMTI Common-mode transient immunity VI = VCC or 0 V, See Figure 5 mA μA mA V IOL = 4 mA, See Figure 1 Low-level output voltage UNIT 200 EN at 0 V or ISO721-Q1 VOL (1) TYP MAX EN at VCC VI = VCC or 0 V, No load Quiescent 25 Mbps VOH MIN V 150 ISO722-Q1 mV 10 μA –10 EN, IN at VCC μA 1 15 1 pF 50 kV/μs For 5-V operation, VCC1 or VCC2 specification is from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 or VCC2 specification is from 3 V to 3.6 V. SWITCHING CHARACTERISTICS: VCC1 and VCC2 5-V OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tPLH Propagation delay, low-to-high-level output See Figure 1 17 24 ns tPHL Propagation delay , high-to-low-level output See Figure 1 17 24 ns tsk(p) Pulse skew |tPHL – tPLH| See Figure 1 0.5 2 ns tsk(pp) (1) Part-to-part skew 0 3 ns tr Output-signal rise time See Figure 1 1 ns tf Output-signal fall time See Figure 1 1 ns tpHZ Sleep-mode propagation delay, high-level-to-high-impedance output Sleep-mode propagation delay, high-impedance-to-high-level output tpZH Sleep-mode propagation delay, high-impedance-to-low-level output tfs Failsafe output delay time from input power loss (1) 15 ns 3.5 4 8 μs 5.5 8 15 ns 4 5 8 μs See Figure 3 tpZL tjit(PP) 8 ISO722-Q1 Sleep-mode propagation delay, low-level-to-high-impedance output tpLZ 6 See Figure 2 Peak-to-peak eye-pattern jitter See Figure 4 3 100-Mbps NRZ data input, See Figure 6 2 100-Mbps unrestricted bit run length data input, See Figure 6 3 μs ns tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 Submit Documentation Feedback 5 ISO721-Q1, ISO722-Q1 SLLS918C – JULY 2008 – REVISED JUNE 2013 www.ti.com ELECTRICAL CHARACTERISTICS: VCC1 at 5-V, VCC2 at 3.3-V (1) OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER ICC1 VCC1 supply current ICC2 VCC2 supply current TEST CONDITIONS Quiescent TYP MAX VI = VCC or 0 V, No load 25 Mbps ISO722-Q1 0.5 1 2 4 EN at VCC Quiescent VI = VCC or 0 V, No load 4 6.5 5 7.5 IOH = –4 mA, See Figure 1 VCC – 0.4 3 IOH = –20 μA, See Figure 1 VCC – 0.1 3.3 VOH High-level output voltage VOL Low-level output voltage VI(HYS) Input voltage hysteresis IIH High-level input current IN at 2 V IIL Low-level input current IN at 0.8 V IOZ High-impedance output current CI Input capacitance to ground IN at VCC, VI = 0.4 sin (4E6πt) CMTI Common-mode transient immunity VI = VCC or 0 V, See Figure 5 UNIT mA μA 150 EN at 0 V or ISO721-Q1 25 Mbps (1) MIN mA V IOL = 4 mA, See Figure 1 0.2 0.4 IOL = 20 μA, See Figure 1 0 0.1 V 150 ISO722-Q1 mV μA 10 μA –10 EN, IN at VCC μA 1 15 1 pF 40 kV/μs For 5-V operation, VCC1 or VCC2 specification is from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 or VCC2 specification is from 3 V to 3.6 V. SWITCHING CHARACTERISTICS: VCC1 at 5-V, VCC2 at 3.3-V OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tPLH Propagation delay, low-to-high-level output See Figure 1 19 30 ns tPHL Propagation delay , high-to-low-level output See Figure 1 19 30 ns tsk(p) Pulse skew |tPHL – tPLH| See Figure 1 0.5 3 ns tsk(pp) (1) Part-to-part skew 0 5 ns tr Output signal rise time See Figure 1 2 ns tf Output signal fall time See Figure 1 2 ns tpHZ Sleep-mode propagation delay, high-level-to-high-impedance output Sleep-mode propagation delay, high-impedance-to-high-level output tpZH Sleep-mode propagation delay, low-level-to-high-impedance output tpLZ tfs Failsafe output delay time from input power loss (1) 6 25 ns 5 6 8 μs 7 13 25 ns 5 6 8 μs See Figure 3 Sleep-mode propagation delay, high-impedance-to-low-level output Peak-to-peak eye-pattern jitter 13 ISO722-Q1 tpZL tjit(PP) 7 See Figure 2 See Figure 4 3 100-Mbps NRZ data input, See Figure 6 2 100-Mbps unrestricted bit run length data input, See Figure 6 3 μs ns tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 ISO721-Q1, ISO722-Q1 www.ti.com SLLS918C – JULY 2008 – REVISED JUNE 2013 ELECTRICAL CHARACTERISTICS: VCC1 at 3.3-V, VCC2 at 5-V (1) OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER ICC1 TEST CONDITIONS Quiescent VCC1 supply current VI = VCC or 0 V, No load 25 Mbps ISO722-Q1 Sleep Mode ICC2 VCC2 supply current TYP MAX 0.3 0.5 1 2 EN at VCC VI = VCC or 0 V, No load Quiescent 25 Mbps 200 EN at 0 V or ISO721Q1 VI = VCC or 0 V, No load 8 12 10 14 IOH = –4 mA, See Figure 1 VCC – 0.8 4.6 IOH = –20 μA, See Figure 1 VCC – 0.1 5 VOH High-level output voltage VOL Low-level output voltage VI(HYS) Input voltage hysteresis IIH High-level input current IN at 2 V IIL Low-level input current IN at 0.8 V IOZ High-impedance output current CI Input capacitance to ground IN at VCC, VI = 0.4 sin (4E6πt) CMTI Common-mode transient immunity VI = VCC or 0 V, See Figure 5 (1) MIN IOL = 4 mA, See Figure 1 0.2 0.4 IOL = 20 μA, See Figure 1 0 0.1 μA mA V mV 10 μA μA –10 EN, IN at VCC 1 15 mA V 150 ISO722-Q1 UNIT μA 1 pF 40 kV/μs For 5-V operation, VCC1 or VCC2 specification is from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 or VCC2 specification is from 3 V to 3.6 V. SWITCHING CHARACTERISTICS: VCC1 at 3.3-V, VCC2 at 5-V OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tPLH Propagation delay, low-to-high-level output See Figure 1 17 30 ns tPHL Propagation delay , high-to-low-level output See Figure 1 17 30 ns tsk(p) Pulse skew |tPHL – tPLH| See Figure 1 0.5 3 ns tsk(pp) (1) Part-to-part skew 0 5 ns tr Output signal rise time See Figure 1 2 ns tf Output signal fall time See Figure 1 2 ns tpHZ Sleep-mode propagation delay, high-level-to-high-impedance output Sleep-mode propagation delay, high-impedance-to-high-level output tpZH Sleep-mode propagation delay, high-impedance-to-low-level output tfs Failsafe output delay time from input power loss (1) 15 ns 4.5 5 8 μs 7 9 15 ns 4.5 5 8 μs See Figure 3 tpZL tjit(PP) 9 ISO722-Q1 Sleep-mode propagation delay, low-level-to-high-impedance output tpLZ 7 See Figure 2 Peak-to-peak eye-pattern jitter See Figure 4 3 100-Mbps NRZ data input, See Figure 6 2 100-Mbps unrestricted bit run length data input, See Figure 6 3 μs ns tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 Submit Documentation Feedback 7 ISO721-Q1, ISO722-Q1 SLLS918C – JULY 2008 – REVISED JUNE 2013 www.ti.com ELECTRICAL CHARACTERISTICS: VCC1 and VCC2 at 3.3-V (1) OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER ICC1 TEST CONDITIONS Quiescent VCC1 supply current VI = VCC or 0 V, No load 25 Mbps ISO722-Q1 Sleep Mode ICC2 VCC2 supply current TYP MAX 0.3 0.5 1 2 EN at VCC VI = VCC or 0 V, No load Quiescent 25 Mbps 150 EN at 0 V or ISO721Q1 VI = VCC or 0 V, No load 4 6.5 5 7.5 IOH = –4 mA, See Figure 1 VCC – 0.4 3 IOH = –20 μA, See Figure 1 VCC – 0.1 3.3 VOH High-level output voltage VOL Low-level output voltage VI(HYS) Input voltage hysteresis IIH High-level input current IN at 2 V IIL Low-level input current IN at 0.8 V IOZ High-impedance output current CI Input capacitance to ground IN at VCC, VI = 0.4 sin (4E6πt) CMTI Common-mode transient immunity VI = VCC or 0 V, See Figure 5 (1) MIN IOL = 4 mA, See Figure 1 0.2 0.4 IOL = 20 μA, See Figure 1 0 0.1 μA mA V mV 10 μA μA –10 EN, IN at VCC 1 15 mA V 150 ISO722-Q1 UNIT μA 1 pF 40 kV/μs For 5-V operation, VCC1 or VCC2 specification is from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 or VCC2 specification is from 3 V to 3.6 V. SWITCHING CHARACTERISTICS: VCC1 and VCC2 at 3.3-V OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tPLH Propagation delay, low-to-high-level output See Figure 1 20 34 ns tPHL Propagation delay , high-to-low-level output See Figure 1 20 34 ns tsk(p) Pulse skew |tPHL – tPLH| See Figure 1 0.5 3 ns tsk(pp) (1) Part-to-part skew 0 5 ns tr Output signal rise time See Figure 1 2 ns tf Output signal fall time See Figure 1 2 ns tpHZ Sleep-mode propagation delay, high-level-to-high-impedance output Sleep-mode propagation delay, high-impedance-to-high-level output tpZH Sleep-mode propagation delay, low-level-to-high-impedance output tpLZ tfs Failsafe output delay time from input power loss (1) 8 25 ns 5 6 8 μs 7 13 25 ns 5 6 8 μs See Figure 3 Sleep-mode propagation delay, high-impedance-to-low-level output Peak-to-peak eye-pattern jitter 13 ISO722-Q1 tpZL tjit(PP) 7 See Figure 2 See Figure 4 3 100-Mbps NRZ data input, See Figure 6 2 100-Mbps unrestricted bit run length data input, See Figure 6 3 μs ns tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 ISO721-Q1, ISO722-Q1 www.ti.com SLLS918C – JULY 2008 – REVISED JUNE 2013 ISOLATION BARRIER PARAMETER MEASUREMENT INFORMATION IN Input Generator (see Note A) VI 50 W VCC1 VI IO OUT VCC1/2 VCC1/2 0V tPHL VOH tPLH VO CL V (see Note B) O 90% 50% 50% 10% A. A generator having the following characteristics supplies the input pulse: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω. B. CL = 15 pF and includes instrumentation and fixture capacitance within ±20%. VOL tf tr 3V ISOLATION BARRIER Figure 1. Switching Characteristic Test Circuit and Voltage Waveforms IN Input Generator NOTE A VO OUT VCC2 VI VCC2/2 0V EN RL = 1 kW ±1 % CL NOTE B + tPZH VOH 50% VO VI VCC2/2 50 W 0.5 V 0V tPHZ - Figure 2. ISO722-Q1 Sleep-Mode High-Level Output Test Circuit and Voltage Waveforms 0V ISOLATION BARRIER VCC2 IN Input Generator NOTE A RL = 1 kW ±1% OUT EN CL NOTE B + VI VCC2 VI VO VCC2/2 0V tPZL VO VCC2/2 tPLZ VCC2 0.5 V 50% VOL 50 W - Figure 3. ISO722-Q1 Sleep-Mode Low-Level Output Test Circuit and Voltage Waveforms NOTE A: A generator having the following characteristics Supplies the input pulse: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω. B: CL = 15 pF ± 20% and includes instrumentation and fixture capacitance. Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 Submit Documentation Feedback 9 ISO721-Q1, ISO722-Q1 SLLS918C – JULY 2008 – REVISED JUNE 2013 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) VCC1 0V IN ISOLATION BARRIER VI VCC1 VI OUT 2.7 V VO 0V tfs VO CL 15 pF ±20% VOH 50% VOL NOTE: VI transition time is 100 ns. VCC1 IN VCC or 0V CI = 0.1 mF, GND1 ISOLATION BARRIER Figure 4. Failsafe Delay-Time Test Circuit and Voltage Waveforms ±1% VCC2 OUT GND2 CL 15 pF ±20% VO VCM NOTE: Pass or fail criterion is no change in VO. Figure 5. Common-Mode Transient Immunity Test Circuit and Voltage Waveform 10 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 ISO721-Q1, ISO722-Q1 www.ti.com SLLS918C – JULY 2008 – REVISED JUNE 2013 PARAMETER MEASUREMENT INFORMATION (continued) Tektronix HFS9009 Tektronix 784D PATTERN GENERATOR VCC1 In p u t 0V O u tp u t VCC2/2 J itte r NOTE: Bit pattern run length is 216 – 1. Transition time is 800 ps. NRZ data input has no more than five consecutive 1s or 0s. Figure 6. Peak-to-Peak Eye-Pattern Jitter Test Circuit and Voltage Waveform Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 Submit Documentation Feedback 11 ISO721-Q1, ISO722-Q1 SLLS918C – JULY 2008 – REVISED JUNE 2013 www.ti.com DEVICE INFORMATION PACKAGE CHARACTERISTICS PARAMETER TEST CONDITIONS (1) MIN TYP MAX UNIT L(101) Minimum air gap (clearance) Shortest terminal-to-terminal distance through air 4.8 mm L(102) Shortest terminal-to-terminal distance across the Minimum external tracking (creepage) package surface 4.3 mm CTI Tracking resistance (comparative tracking index) DIN IEC 60112/VDE 0303 Part 1 ≥ 175 V Minimum internal gap (internal clearance) Distance through insulation 0.008 mm RIO Isolation resistance Input to output, VIO = 500 V, all pins on each side of the barrier tied together creating a two-terminal device, TA < 100°C >1012 Ω Input-to-output, VIO = 500 V, 100°C ≤ TA< TA max. >1011 Ω CIO Barrier capacitance, input to output VI = 0.4 sin (4E6πt) 1 pF CI Input capacitance to ground VI = 0.4 sin (4E6πt) 1 pF (1) Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Take care to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed circuit board do not reduce this distance. Creepage and clearance on a printed circuit board become equal according to the measurement techniques shown in the Isolation Glossary. Use techniques such as inserting grooves and/or ribs on a printed circuit board to help increase these specifications. IEC 60664-1 RATINGS TABLE PARAMETER TEST CONDITIONS Basic isolation group Installation classification SPECIFICATION Material group IIIa Rated mains voltage ≤150 VRMS I-IV Rated mains voltage ≤300 VRMS I-III DEVICE I/O SCHEMATIC Figure 7. Equivalent Input and Output Schematic Diagrams Output Input VCC2 VCC1 VCC1 VCC1 8W 1 MW OUT 500 W IN 13 W 12 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 ISO721-Q1, ISO722-Q1 www.ti.com SLLS918C – JULY 2008 – REVISED JUNE 2013 IEC SAFETY LIMITING VALUES Safety limiting is designed to prevent potential damage to the isolation barrier on failure of input or output circuitry. A failure of the IO can allow low resistance to ground or the supply, and without current limiting, dissipate sufficient power to overheat the die and damage the isolation barrier, potentially leading to secondary system failures. PARAMETER TEST CONDITIONS IS Safety input, output, or supply current TS Maximum case temperature MIN MAX θJA = 263°C/W, VI = 5.5 V, TJ = 170°C, TA = 25°C 100 θJA = 263°C/W, VI = 3.6 V, TJ = 170°C, TA = 25°C 153 150 UNIT mA °C The safety-limiting constraint is the absolute maximum junction temperature specified in the absolute maximum ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The junction-to-air thermal resistance in the Thermal Characteristics table is that of a device installed in the JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages and is conservative. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance. Table 2. THERMAL CHARACTERISTICS (over recommended operating conditions unless otherwise noted) PARAMETER TEST CONDITIONS Junction-to-air thermal resistance θJB Junction-to-board thermal resistance θJC Junction-to-case thermal resistance PD (1) 263 125 VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF, Input a 100-Mbps 50% duty cycle square wave Device power dissipation TYP High-K (1) Low-K θJA MIN (1) MAX UNIT °C/W 44 °C/W 75 °C/W 159 mW Tested in accordance with the low-K or high-K thermal metric definition of EIA/JESD51-3 for leaded surface-mount packages. 200 Safety Limiting Current − mA 175 VCC1, VCC2 = 3.6 V 150 125 100 75 VCC1, VCC2 = 5.5 V 50 25 0 0 50 100 150 200 o Case Temperature − C Figure 8. θJC Thermal Derating Curve Per IEC 60747-5-2 Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 Submit Documentation Feedback 13 ISO721-Q1, ISO722-Q1 SLLS918C – JULY 2008 – REVISED JUNE 2013 www.ti.com Table 3. FUNCTION TABLE (1) VCC1 PU PD (1) 14 VCC2 PU PU INPUT (IN) OUTPUT (OUT) H H L L Open H X H PU = powered up (VCC ≥ 3 V), PD = powered down (VCC ≤ 2.5 V), X = irrelevant, H = high level, L = low level Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 ISO721-Q1, ISO722-Q1 www.ti.com SLLS918C – JULY 2008 – REVISED JUNE 2013 TYPICAL CHARACTERISTICS RMS SUPPLY CURRENT versus SIGNALING RATE RMS SUPPLY CURRENT versus SIGNALING RATE 15 10 VCC1 = 3.3 V, VCC2 = 3.3 V, o TA = 25 C, CL = 15 pF 8 VCC1 = 5 V, VCC2 = 5 V, o TA = 25 C, CL = 15 pF 14 13 ICC − Supply Current − (mARMS) ICC − Supply Current − (mARMS) 9 7 6 ICC2 5 4 3 ICC1 2 12 11 10 ICC2 9 8 7 ICC1 6 5 4 3 2 1 1 0 0 0 25 50 75 0 100 25 50 75 100 Signaling Rate (Mbps) Signaling Rate (Mbps) Figure 9. Figure 10. PROPAGATION DELAY versus FREE-AIR TEMPERATURE PROPAGATION DELAY versus FREE-AIR TEMPERATURE 30 20 tPLH 18 tPLH 25 tPHL 16 20 15 10 VCC1 = 3.3 V, VCC2 = 3.3 V, CL = 15 pF, Air Flow at 7 cf/m 5 0 -40 -25 -10 5 20 35 50 80 65 95 Propagation Delay − ns Propagation Delay − ns tPHL 14 12 10 8 6 VCC1 = 5 V, VCC2 = 5 V, CL = 15 pF, Air Flow at 7 cf/m 4 2 0 -40 110 125 -25 -10 o 5 20 35 50 80 65 95 110 125 o TA − Free-Air Temperature − C TA − Free-Air Temperature − C Figure 11. Figure 12. INPUT THRESHOLD VOLTAGE versus FREE-AIR TEMPERATURE VCC1 FAILSAFE THRESHOLD VOLTAGE versus FREE-AIR TEMPERATURE 2.92 1.4 5-V (VIT+) 2.9 1.3 3.3-V (VIT+) 1.25 1.2 Air Flow at 7 cf/m 1.15 5-V (VIT- ) 1.1 VCC1 Failsafe Voltage − V VIT − Input Voltage Threshold − V 1.35 Vfs+ 2.88 VCC = 5 V or 3.3 V, CL = 15 pF, Air Flow at 7 cf/m 2.86 2.84 2.82 Vfs- 2.8 1.05 3.3-V (VIT- ) 1 -40 -25 -10 5 20 35 50 80 65 95 110 125 2.78 -40 -25 -10 o TA − Free-Air Temperature − C Figure 13. 5 20 35 50 80 65 95 110 125 o TA − Free-Air Temperature − C Figure 14. Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 Submit Documentation Feedback 15 ISO721-Q1, ISO722-Q1 SLLS918C – JULY 2008 – REVISED JUNE 2013 www.ti.com TYPICAL CHARACTERISTICS (continued) LOW-LEVEL OUTPUT CURRENT versus LOW-LEVEL OUTPUT VOLTAGE HIGH-LEVEL OUTPUT CURRENT versus HIGH-LEVEL OUTPUT VOLTAGE 70 -80 IOL − Low-Level Output Current − mA IOH − High-Level Output Current − mA o TA = 25 C o TA = 25 C -70 VCC = 5 V -60 -50 -40 VCC = 3.3 V -30 -20 -10 0 60 VCC = 5 V 50 40 30 VCC = 3.3 V 20 10 0 0 1 2 3 5 4 6 0 1 VOH − High-Level Output Voltage − V Figure 15. 16 Submit Documentation Feedback 2 3 4 5 VOL − Low-Level Output Voltage − V Figure 16. Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 ISO721-Q1, ISO722-Q1 www.ti.com SLLS918C – JULY 2008 – REVISED JUNE 2013 APPLICATION INFORMATION MANUFACTURER CROSS-REFERENCE DATA The ISO72x-Q1 isolator has the same functional pinout as most other vendors, and it is often a pin-for-pin dropin replacement. The notable differences in the product are propagation delay, signaling rate, power consumption, and transient protection rating. Use (1) as a guide for replacing other isolators with the ISO72x-Q1 single-channel isolators. 6 OUT GND1 4 5 GND2 GND1 4 8 VCC2 VI 2 7 GND2 6 OUT 5 GND2 VDD1 3 GND1 4 8 VDD2 7 GND2 6 VO 5 GND2 VDD1 1 VI 2 * 3 IL710 VDD1 8 VDD2 VI 7 NC 6 VO NC 5 GND2 GND1 GND1 4 1 2 3 8 VDD2 7 VOE Isolation IN 2 VCC1 3 Isolation VCC1 1 8 VCC2 7 GND2 Isolation IN 2 VCC1 3 Isolation VCC1 1 HCPL-xxxx ADuM1100 VDD1 1 Isolation ISO721 ISO722 6 VO 5 GND2 4 Figure 17. Pinout Cross-Reference Table 4. Competitive Cross-Reference PIN 1 PIN 2 PIN 3 PIN 4 PIN 5 PIN 6 ISO721 (1) (2) VCC1 IN VCC1 GND1 GND2 OUT (1) (2) VDD1 VI VDD1 GND1 GND2 VO GND2 VDD2 GND1 GND2 VO NC (4) VDD2 GND1 GND2 VO V OE VDD2 ADuM1100 (1) (1) (2) (3) (4) (5) PIN 7 ISOLATOR HCPL-xxxx VDD1 VI Leave open (3) IL710 VDD1 VI NC (5) ISO721 ISO722 GND2 EN PIN 8 VCC2 An HCPL device pin 7 must be floating (open) or grounded to use an ISO722 device as a drop-in replacement. Placing pin 7 of the ISO722 device in a high logic state disables the output of the device. The ISO721 pin 1 and pin 3 connect together internally. One may use either or both as VCC1. The ISO721 pin 5 and pin 7 connect together internally. One may use either or both as GND2. Pin 3 of the HCPL devices must be open. This is not a problem when substituting an ISO721, because the extra VCC1 on pin 3 may be open-circuit as well. An HCPL device pin 7 must be floating (open) or grounded to use an ISO722 device as a drop-in replacement. Placing pin 7 of the ISO722 device in a high logic state disables the output of the device. Pin 3 of the IL710 must not tie to ground on the circuit board, because this shorts the ISO721 VCC1 to ground. The IL710 pin 3 may only tie to VCC or be open to drop in an ISO721. 20 mm (max) from VCC1 20 mm (max) from VCC2 VCC1 VCC2 0.1 µF 0.1 µF ISO721 8 1 2 Input 3 4 GND1 7 IN OUT 6 5 Output GND2 Figure 18. Basic Application Circuit Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 Submit Documentation Feedback 17 ISO721-Q1, ISO722-Q1 SLLS918C – JULY 2008 – REVISED JUNE 2013 www.ti.com ISOLATION GLOSSARY Creepage Distance—The shortest path between two conductive input to output leads measured along the surface of the insulation. The shortest-distance path is around the end of the package body. Clearance—The shortest distance between two conductive input to output leads measured through air (line of sight) Input-to-Output Barrier Capacitance—The total capacitance between all input terminals connected together, and all output terminals connected together Input-to-Output Barrier Resistance—The total resistance between all input terminals connected together, and all output terminals connected together Primary Circuit—An internal circuit directly connected to an external supply main or other equivalent source which supplies the primary-circuit electric power Secondary Circuit—A circuit with no direct connection to primary power, and deriving its power from a separate isolated source Comparative Tracking Index (CTI)—CTI is an index used for electrical insulating materials and defined as the numerical value of the voltage that causes failure by tracking during standard testing. Tracking is the process that produces a partially conducting path of localized deterioration on or through the surface of an insulating material as a result of the action of electric discharges on or close to an insulation surface -- the higher CTI value of the insulating material, the smaller the minimum creepage distance. Generally, insulation breakdown occurs either through the material, over its surface, or both. Surface failure may arise from flashover or from the progressive degradation of the insulation surface by small localized sparks. Such sparks are the result of the breaking of a surface film of conducting contaminant on the insulation. The resulting break in the leakage current produces an overvoltage at the site of the discontinuity, generating an electric spark. These sparks often cause carbonization on insulation material and lead to a carbon track between points of different potential. The name of this process is tracking. 18 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 ISO721-Q1, ISO722-Q1 www.ti.com SLLS918C – JULY 2008 – REVISED JUNE 2013 Insulation Operational insulation—Insulation needed for the correct operation of the equipment Basic insulation—Insulation to provide basic protection against electric shock Supplementary insulation-—Independent insulation applied in addition to basic insulation in order to ensure protection against electric shock in the event of a failure of the basic insulation Double insulation—Insulation comprising both basic and supplementary insulation Reinforced insulation—A single insulation system that provides a degree of protection against electric shock equivalent to double insulation Pollution Degree Pollution Degree 1—No pollution, or only dry, nonconductive pollution occurs. The pollution has no influence. Pollution Degree 2—Normally, only nonconductive pollution occurs. However, a temporary conductivity caused by condensation must be expected. Pollution Degree 3—Conductive pollution occurs or dry nonconductive pollution occurs that becomes conductive due to condensation, which is to be expected. Pollution Degree 4–Continuous conductivity occurs due to conductive dust, rain, or other wet conditions. Installation Category Overvoltage Category—This section addresses insulation coordination by identifying the transient overvoltages that may occur and by assigning four different levels as indicated in IEC 60664. I: Signal Level-—Special equipment or parts of equipment II: Local Level—Portable equipment, etc. III: Distribution Level-—Fixed installation IV: Primary Supply Level-—Overhead lines, cable systems Each successive category should be subject to smaller transients than any higher-numbered category following it. Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 Submit Documentation Feedback 19 ISO721-Q1, ISO722-Q1 SLLS918C – JULY 2008 – REVISED JUNE 2013 www.ti.com REVISION HISTORY Changes from Revision B (June 2013) to Revision C • Page Changed temperature grade from 3 to 1 .............................................................................................................................. 1 Changes from Revision A (September 2011) to Revision B Page • Added AEC-Q100 qualifications ........................................................................................................................................... 1 • Changed signaling-rate limit to 100 Mbps ............................................................................................................................ 1 • Deleted Ordering Information table ....................................................................................................................................... 3 • Changed last sentence in the Installation Category section ............................................................................................... 19 20 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: ISO721-Q1 ISO722-Q1 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) ISO721QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 IS721Q ISO722QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 IS722Q (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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ISO721QDRQ1
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