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ISO7520C, ISO7521C
SLLSE39E – JUNE 2010 – REVISED MAY 2015
ISO752xC Low-Power 5 kVRMS Dual-Channel Digital Isolators
1 Features
3 Description
•
•
•
•
•
•
The ISO7520C and ISO7521C provide galvanic
isolation of up to 4243 VRMS for 1 minute per UL and
6000 VPK per VDE. These devices are also certified
to 5000 VRMS reinforced insulation per end equipment
standards IEC 60950-1, IEC 61010-1, and IEC
60601-1. These digital isolators have two isolated
channels with unidirectional (ISO7520C) and
bidirectional (ISO7521C) channel configurations.
Each isolation channel has a logic input and output
buffer separated by a silicon oxide (SiO2) insulation
barrier. Used in conjunction with isolated power
supplies, these devices prevent noise currents on a
data bus or other circuits from entering the local
ground and interfering with or damaging sensitive
circuitry. The devices have TTL input thresholds and
can operate from 3.3- and 5-V supplies. All inputs are
5-V tolerant when supplied from 3.3-V supplies.
1
•
•
Highest Signaling Rate: 1 Mbps
Propagation Delay Less Than 20 ns
Low-Power Consumption
Wide Ambient Temperature: –40°C to 105°C
50 kV/µs Transient Immunity Typical
Operates From 3.3-V or 5-V Supply and Logic
Levels
3.3-V and 5.0-V Level Translation
Safety and Regulatory Approvals
– 6000 VPK Isolation per DIN V VDE V 0884-10
and DIN EN 61010-1
– 4243 VRMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950-1, IEC 61010-1, and IEC 60601-1 End
Equipment Standards
– TUV 5000 VRMS Isolation per EN 60950-1 and
EN 61010-1
– CQC Certification per GB4943.1-2011
2 Applications
•
NOTE: The ISO7520C and ISO7521C are specified
for signaling rates up to 1 Mbps. Due to their fast
response time, these devices will also transmit faster
data with much shorter pulse widths. Designers must
add external filtering to remove spurious signals with
input pulse duration < 20 ns, if desired.
Device Information(1)
Opto-Coupler Replacement in:
– Industrial Field-Buses
– ProfiBuses
– ModBuses
– DeviceNet™ Data Buses
– Servo Control Interfaces
– Motor Control
– Power Supplies
– Battery Packs
PART NUMBER
ISO7520C
ISO7521C
PACKAGE
SOIC (16)
BODY SIZE (NOM)
10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
VCCI
VCCO
Isolation
Capacitor
INx
OUTx
GNDI
GNDO
(1)
VCCI and GNDI are supply and ground connections respectively for the input channels.
(2)
VCCO and GNDO are supply and ground connections respectively for the output channels.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO7520C, ISO7521C
SLLSE39E – JUNE 2010 – REVISED MAY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
4
6.1
6.2
6.3
6.4
6.5
Absolute Maximum Ratings ..................................... 4
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Electrical Characteristics: VCC1 and VCC2 at 5 V ±
5% .............................................................................. 6
6.6 Electrical Characteristics: VCC1 at 5 V ± 5%, VCC2 at
3.3 V ± 5% ................................................................. 6
6.7 Electrical Characteristics: VCC1 at 3.3 V ± 5%, VCC2
at 5 V ± 5% ................................................................ 7
6.8 Electrical Characteristics: VCC1 and VCC2 at 3.3 V ±
5% .............................................................................. 7
6.9 Power Dissipation Characteristics ............................ 7
6.10 Switching Characteristics: VCC1 and VCC2 at 5 V ±
5% .............................................................................. 8
6.11 Switching Characteristics: VCC1 at 5 V ± 5%, VCC2
at 3.3 V ± 5% ............................................................. 8
6.12 Switching Characteristics: VCC1 at 3.3 V ± 5%, VCC2
at 5 V ± 5% ................................................................ 8
6.13 Switching Characteristics: VCC1 and VCC2 at 3.3 V ±
5% .............................................................................. 9
6.14 Typical Characteristics ............................................ 9
7
8
Parameter Measurement Information ................ 10
Detailed Description ............................................ 11
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
11
11
12
14
Application and Implementation ........................ 15
9.1 Application Information............................................ 15
9.2 Typical Application ................................................. 15
10 Power Supply Recommendations ..................... 17
11 Layout................................................................... 17
11.1 Layout Guidelines ................................................. 17
11.2 Layout Example .................................................... 17
12 Device and Documentation Support ................. 18
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
18
18
18
18
18
18
13 Mechanical, Packaging, and Orderable
Information ........................................................... 18
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (October 2013) to Revision E
•
Page
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
Changes from Revision C (November 2011) to Revision D
Page
•
Deleted Note 1 from the INSULATION CHARACTERISTICS table..................................................................................... 12
•
Changed the REGULATORY INFORMATION table, TUV column From: Certificate Number: U8V 11 08 77311 006
To: Certificate Number: U8V 1309 77311 010 ..................................................................................................................... 14
Changes from Revision B (June 2011) to Revision C
Page
•
Changed all the devices numbers by adding a 'C' to the end ................................................................................................ 1
•
Changed the Safety and Regulatory Approvals Feature........................................................................................................ 1
•
Changed the Description section............................................................................................................................................ 1
•
Changed the IEC 60664-1 Ratings Table ............................................................................................................................ 12
•
Changed the INSULATION CHARACTERISTICS table....................................................................................................... 12
2
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ISO7520C, ISO7521C
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SLLSE39E – JUNE 2010 – REVISED MAY 2015
Changes from Revision A (September 2010) to Revision B
Page
•
Changed 5th Features subbullets........................................................................................................................................... 1
•
Changed the first SWITCHING CHAR table, MAX value, 2nd row from 3.5 to 3.7 and third row from 4 to 4.9 .................... 8
•
Changed the second SWITCHING CHAR table, MAX value, 2nd row from 4 to 5.6 and third row from 5 to 6.3 ................. 8
•
Changed the third SWITCHING CHAR table, MAX value, 3rd row from 5 to 8.5 .................................................................. 8
•
Changed the fourth SWITCHING CHAR table, MAX value, 3rd row from 6 to 6.8................................................................ 9
•
Changed REGULATORY INFORMATION table , from: File Number: pending, to: File Number: E181974 ........................ 14
Changes from Original (June 2010) to Revision A
Page
•
Added PIN DESCRIPTION table............................................................................................................................................ 4
•
Changed tfs units in Switching Characteristics Table ............................................................................................................. 8
•
Changed tfs units in Switching Characteristics Table ............................................................................................................. 8
•
Changed tfs units in Switching Characteristics Table ............................................................................................................. 8
•
Changed tfs units in Switching Characteristics Table ............................................................................................................. 9
•
Deleted VIORM test conditions from INSULATION CHARACTERSISTCS table .................................................................. 12
•
Added VPR parameter and Specifications in INSULATION CHARACTERSISTCS table ..................................................... 12
•
Changed VIOTM row of the INSULATION CHARACTERISTICS tables ................................................................................ 12
•
Changed VISO Specifications in INSULATION CHARACTERISTICS table .......................................................................... 12
•
Changed Minimum internal gap limit from 0.016 to 0.014 mm............................................................................................. 12
Copyright © 2010–2015, Texas Instruments Incorporated
Product Folder Links: ISO7520C ISO7521C
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ISO7520C, ISO7521C
SLLSE39E – JUNE 2010 – REVISED MAY 2015
www.ti.com
5 Pin Configuration and Functions
DW Package
16-Pin SOIC
Top View
ISO7520C
GND1
NC
VCC1
INA
INB
NC
GND1
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GND2
NC
VCC2
OUTA
OUTB
NC
NC
GND2
GND1
NC
VCC1
OUTA
INB
NC
GND1
NC
1
2
3
4
5
6
7
8
ISO7521C
16
15
14
13
12
11
10
9
GND2
NC
VCC2
INA
OUTB
NC
NC
GND2
Pin Functions
PIN
NAME
I/O
DESCRIPTION
ISO7520C
ISO7521C
GND1
1, 7
1, 7
—
Ground connection for VCC1
GND2
Ground connection for VCC2
9, 16
9, 16
—
INA
4
13
I
Input, channel A
INB
5
5
I
Input, channel B
NC
2, 6, 8, 10, 11, 15
2, 6, 8, 10, 11, 15
—
No internal connection
OUTA
13
4
O
Output, channel A
OUTB
12
12
O
Output, channel B
VCC1
3
3
—
Power supply, VCC1
VCC2
14
14
—
Power supply, VCC2
6 Specifications
6.1 Absolute Maximum Ratings (1)
MIN
MAX
UNIT
VCC1, VCC2
Supply voltage (2)
–0.5
6
V
VI
Voltage at INx, OUTx
–0.5
VCC + 0.5 (3)
V
IO
Output Current
–15
TJ
Maximum junction temperature
Tstg
Storage temperature
(1)
(2)
(3)
–65
15
mA
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values.
Maximum voltage must not exceed 6 V.
6.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
V(ESD)
(1)
(2)
4
Electrostatic discharge
(1)
UNIT
±4000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
Machine model (MM)
±200
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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SLLSE39E – JUNE 2010 – REVISED MAY 2015
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VCC1, VCC2
MIN
NOM
MAX
UNIT
Supply voltage - 3.3-V Operation
3.15
3.3
3.45
V
Supply voltage - 5-V Operation
4.75
5
5.25
IOH
High-level output current
IOL
Low-level output current
VIH
High-level output voltage
2
5.25
VIL
Low-level output voltage
0
0.8
V
TA
Ambient temperature
-40
105
°C
Junction temperature
TJ
(1)
–4
mA
4
–40
136
1/tui
Signaling rate
0
1
tui
Input pulse duration
1
(1)
mA
V
°C
Mbps
µs
To maintain the recommended operating conditions for TJ, see Thermal Information.
6.4 Thermal Information
ISO7520C, ISO7521C
THERMAL METRIC
(1)
DW [SOIC]
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
79.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
44.6
°C/W
RθJB
Junction-to-board thermal resistance
51.2
°C/W
ψJT
Junction-to-top characterization parameter
18.0
°C/W
ψJB
Junction-to-board characterization parameter
42.2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
Copyright © 2010–2015, Texas Instruments Incorporated
Product Folder Links: ISO7520C ISO7521C
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ISO7520C, ISO7521C
SLLSE39E – JUNE 2010 – REVISED MAY 2015
www.ti.com
6.5 Electrical Characteristics: VCC1 and VCC2 at 5 V ± 5%
VCC1 and VCC2 at 5 V ±5%, TA = –40°C to 105°C
PARAMETER
TEST CONDITIONS
IOH = –4 mA; See Figure 4
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
INx at VCCI (2)
IIL
Low-level input current
INx at 0 V
CMTI
Common-mode transient immunity
VI = VCCI or 0 V; See Figure 6
MIN
TYP
(1)
4.6
VCCO –0.1
5
VCCO –0.8
IOH = –20 µA; See Figure 4
MAX
V
IOL = 4 mA; See Figure 4
0.2
0.4
IOL = 20 µA; See Figure 4
0
0.1
400
V
mV
10
–10
25
UNIT
µA
µA
50
kV/µs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE-WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
ISO7520C
ICC1
Supply current for VCC1
DC to 1 Mbps VI = VCCI or 0 V, 15-pF load
0.4
1
mA
ICC2
Supply current for VCC2
DC to 1 Mbps VI = VCCI or 0 V, 15-pF load
3
6
mA
ISO7521C
ICC1
Supply current for VCC1
DC to 1 Mbps VI = VCCI or 0 V, 15-pF load
2
4
mA
ICC2
Supply current for VCC2
DC to 1 Mbps VI = VCCI or 0 V, 15-pF load
2
4
mA
(1)
(2)
VCCO is the supply voltage, VCC1 or VCC2, for the output channel that is being measured.
VCCI is the supply voltage, VCC1 or VCC2, for the input channel that is being measured.
6.6 Electrical Characteristics: VCC1 at 5 V ± 5%, VCC2 at 3.3 V ± 5%
VCC1 at 5 V ±5%, VCC2 at 3.3 V ±5%, TA = –40°C to 105°C
PARAMETER
VOH
High-level output voltage
TEST CONDITIONS
IOH = –4 mA;
See Figure 4
MIN
TYP
ISO7521C (5-V side)
VCCO –0.8
4.6
ISO7520C/7521C(3.3-V side)
VCCO –0.4
3
VCCO –0.1
VCCO
IOH = –20 µA; See Figure 4
MAX
V
IOL = 4 mA; See Figure 4
0.2
0.4
IOL = 20 µA; See Figure 4
0
0.1
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
INx at VCCI
IIL
Low-level input current
INx at 0 V
CMTI
Common-mode transient immunity
VI = VCCI or 0 V; See Figure 6
400
V
mV
10
–10
25
UNIT
µA
µA
40
kV/µs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE-WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
ISO7520C
ICC1
Supply current for VCC1
DC to 1 Mbps
VI = VCCI or 0 V, 15-pF load
0.4
1
mA
ICC2
Supply current for VCC2
DC to 1 Mbps
VI = VCCI or 0 V, 15-pF load
2
4.5
mA
ISO7521C
ICC1
Supply current for VCC1
DC to 1 Mbps
VI = VCCI or 0 V, 15-pF load
2
4
mA
ICC2
Supply current for VCC2
DC to 1 Mbps
VI = VCCI or 0 V, 15-pF load
1.5
3.5
mA
6
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6.7 Electrical Characteristics: VCC1 at 3.3 V ± 5%, VCC2 at 5 V ± 5%
VCC1 at 3.3 V ±5%, VCC2 at 5 V ±5%, TA = –40°C to 105°C
PARAMETER
VOH
TEST CONDITIONS
IOH = –4 mA;
See Figure 4
High-level output voltage
MIN
TYP
ISO7520C/7521C (5-V side)
VCCO –0.8
4.6
ISO7521C (3.3-V side)
VCCO –0.4
3
VCCO –0.1
VCCO
IOH = –20 µA; See Figure 4
MAX
V
IOL = 4 mA; See Figure 4
0.2
0.4
IOL = 20 µA; See Figure 4
0
0.1
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
INx at VCCI
IIL
Low-level input current
INx at 0 V
CMTI
Common-mode transient immunity
VI = VCCI or 0 V; See Figure 6
UNIT
V
400
mV
10
µA
–10
µA
25
40
kV/µs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE-WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
ISO7520C
ICC1
Supply current for VCC1
DC to 1 Mbps
VI = VCCI or 0 V, 15-pF load
0.2
0.7
mA
ICC2
Supply current for VCC2
DC to 1 Mbps
VI = VCCI or 0 V, 15-pF load
3
6
mA
ISO7521C
ICC1
Supply current for VCC1
DC to 1 Mbps
VI = VCCI or 0 V, 15-pF load
1.5
3.5
mA
ICC2
Supply current for VCC2
DC to 1 Mbps
VI = VCCI or 0 V, 15-pF load
2
4
mA
MAX
6.8 Electrical Characteristics: VCC1 and VCC2 at 3.3 V ± 5%
VCC1 and VCC2 at 3.3 V ±5%, TA = –40°C to 105°C
PARAMETER
MIN
TYP
IOH = –4 mA; See Figure 4
TEST CONDITIONS
VCCO –0.4
3
IOH = –20 µA; See Figure 4
VCCO –0.1
3.3
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
INx at VCCI
IIL
Low-level input current
INx at 0 V
CMTI
Common-mode transient immunity
VI = VCCI or 0 V; See Figure 6
UNIT
V
IOL = 4 mA; See Figure 4
0.2
0.4
IOL = 20 µA; See Figure 4
0
0.1
V
400
mV
µA
–10
25
µA
40
kV/µs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE-WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
ISO7520C
ICC1
Supply current for VCC1
DC to 1 Mbps VI = VCCI or 0 V, 15-pF load
0.2
0.7
mA
ICC2
Supply current for VCC2
DC to 1 Mbps VI = VCCI or 0 V, 15-pF load
2
4.5
mA
ISO7521C
ICC1
Supply current for VCC1
DC to 1 Mbps VI = VCCI or 0 V, 15-pF load
1.5
3.5
mA
ICC2
Supply current for VCC2
DC to 1 Mbps VI = VCCI or 0 V, 15-pF load
1.5
3.5
mA
6.9 Power Dissipation Characteristics
over operating free-air temperature range (unless otherwise noted)
ISO7520C, ISO7521C
PARAMETER
DW [SOIC]
UNIT
16 PINS
PD
Device power dissipation, VCC1 = VCC2 = 5.25 V, TJ = 150°C,
CL = 15 pF, Input a 0.5 MHz 50% duty cycle square wave
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42
mW
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6.10 Switching Characteristics: VCC1 and VCC2 at 5 V ± 5%
VCC1 and VCC2 at 5 V ±5%, TA = –40°C to 105°C
PARAMETER
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(pp)
TEST CONDITIONS
MIN
MAX
UNIT
9
14
ns
0.3
3.7
ns
Part-to-part skew time
4.9
ns
tsk(o)
Channel-to-channel output skew time
3.6
ns
tr
Output signal rise time
tf
Output signal fall time
tfs
Fail-safe output delay time from input power loss
(1)
See Figure 4
TYP
1
See Figure 4
See Figure 5
ns
1
ns
6
µs
Also known as pulse skew.
6.11
Switching Characteristics: VCC1 at 5 V ± 5%, VCC2 at 3.3 V ± 5%
VCC1 at 5 V ± 5%, VCC2 at 3.3 V ± 5%, TA = –40°C to 105°C
PARAMETER
TEST CONDITIONS
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(pp)
Part-to-part skew time
tsk(o)
Channel-to-channel output skew time
tr
Output signal rise time
tf
Output signal fall time
tfs
Fail-safe output delay time from input power loss
(1)
MIN
See Figure 4
See Figure 4
See Figure 5
TYP
MAX
10
17
UNIT
ns
0.5
5.6
ns
6.3
ns
4
ns
2
ns
2
ns
6
µs
Also known as pulse skew.
6.12 Switching Characteristics: VCC1 at 3.3 V ± 5%, VCC2 at 5 V ± 5%
VCC1 at 3.3 V ±5%, VCC2 at 5 V ±5%, TA = –40°C to 105°C
PARAMETER
tPLH, tPHL
PWD
(1)
TEST CONDITIONS
Propagation delay time
See Figure 4
Pulse width distortion |tPHL – tPLH|
Part-to-part skew time
tsk(o)
Channel-to-channel output skew time
tr
Output signal rise time
tf
Output signal fall time
tfs
Fail-safe output delay time from input power loss
8
TYP
MAX
10
17
ns
0.5
tsk(pp)
(1)
MIN
2
See Figure 4
See Figure 5
UNIT
4
ns
8.5
ns
4
ns
ns
2
ns
6
µs
Also known as pulse skew.
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6.13 Switching Characteristics: VCC1 and VCC2 at 3.3 V ± 5%
VCC1 and VCC2 at 3.3 V ±5%, TA = –40°C to 105°C
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
12
20
ns
1
5
ns
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(pp)
Part-to-part skew time
6.8
ns
tsk(o)
Channel-to-channel output skew time
5.5
ns
tr
Output signal rise time
tf
Output signal fall time
tfs
Fail-safe output delay time from input power loss
(1)
See Figure 4
TYP
2
See Figure 4
See Figure 5
ns
2
ns
6
µs
Also known as pulse skew.
6.14 Typical Characteristics
IOH − High-Level Output Current − mA
Fail-Safe Voltage Threshold − V
2.62
2.61
FS+
2.60
2.59
2.58
2.57
2.56
2.55
FS−
2.54
2.53
2.52
−55
0
TA = 25°C
−10
−20
−30
−40
VCC1, VCC2 at 3.3 V
−50
−60
−70
VCC1, VCC2 at 5 V
−80
−90
−35
−15
5
25
45
65
85
105
TA − Free-Air Temperature − °C
0
125
1
2
3
4
5
VOH − High-Level Output Voltage − V
G006
Figure 1. Fail-Safe Voltage Threshold vs Free-Air
Temperature
6
G007
Figure 2. High-Level Output Current vs High-Level Output
Voltage
IOL − Low-Level Output Current − mA
80
TA = 25°C
70
60
VCC1, VCC2 at 5 V
50
40
VCC1, VCC2 at 3.3 V
30
20
10
0
0
1
2
3
4
5
VOL − Low-Level Output Voltage − V
6
G008
Figure 3. Low-Level Output Current vs Low-Level Output Voltage
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7 Parameter Measurement Information
ISOLATION BARRIER
IN
Input
Generator
VI
VCCI
50 W
VI
1.4 V
1.4 V
OUT
0V
t PHL
tPLH
VO
CL
NOTE
B
NOTE A
VOH
90%
VCCO /2
VO
10%
tf
tr
VCCO /2
VOL
A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3
ns, tf ≤ 3 ns, ZO = 50 Ω.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 4. Switching Characteristic Test Circuit and Voltage Waveforms
VI
VCCI
ISOLATION BARRIER
VCCI
IN = 0
2.7 V
VI
OUT
VO
0V
tfs
CL
VOH
50%
VO
FAILSAFE HIGH
VOL
NOTE
A
A.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 5. Fail-safe Delay Time Test Circuit and Voltage Waveforms
S1
C = 0.1 μ F ±1%
Isolation Barrier
VCCI
IN
GNDI
VCCO
C = 0.1 μ F ±1%
Pass-fail criteria –
output must remain
stable.
OUT
+
CL
Note A
VOH or VOL
–
GNDO
+ VCM –
A.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 6. Common-Mode Transient Immunity Test Circuit
10
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8 Detailed Description
8.1 Overview
The isolator in Figure 7 is based on a capacitive isolation barrier technique. The I/O channel of the device
consists of two internal data channels, a high-frequency channel (HF) with a bandwidth from 100 kbps up to 1
Mbps, and a low-frequency channel (LF) covering the range from 100 kbps down to DC. In principle, a singleended input signal entering the HF-channel is split into a differential signal through the inverter gate at the input.
The following capacitor-resistor networks differentiate the signal into transients, which then are converted into
differential pulses by two comparators. The comparator outputs drive a NOR-gate flip-flop whose output feeds an
output multiplexer. A decision logic (DCL) at the driving output of the flip-flop measures the durations between
signal transients. If the duration between two consecutive transients exceeds a certain time limit, (as in the case
of a low-frequency signal), the DCL forces the output-multiplexer to switch from the high- to the low frequency
channel. Because low-frequency input signals require the internal capacitors to assume prohibitively large
values, these signals are pulse-width modulated (PWM) with the carrier frequency of an internal oscillator, thus
creating a sufficiently high frequency signal, capable of passing the capacitive barrier. As the input is modulated,
a low-pass filter (LPF) is needed to remove the high-frequency carrier from the actual data before passing it on to
the output multiplexer.
8.2 Functional Block Diagram
Isolation barrier
OSC
LPF
Low-frequency
channel
(DC...100 kbps)
PWM
VREF
0
IN
Out
1 S
DCL
High-frequency
channel
(100 kbps...
1 Mbps)
VREF
Figure 7. Conceptual Block Diagram of a Digital Capacitive Isolator
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8.3 Feature Description
8.3.1 Insulation Characteristics
over recommended operating conditions (unless otherwise noted)
PARAMETER
VIORM
VPR
TEST CONDITIONS
SPECIFICATION
UNIT
1414
VPEAK
Maximum repetitive peak isolation
voltage
Input to output test voltage
Method a, After environmental tests subgroup 1,
VPR = VIORM x 1.6, t = 10 s,
Partial discharge < 5 pC
2262
Method b1,
VPR = VIORM x 1.875, t = 1 s (100% Production test)
Partial discharge < 5 pC
2651
After Input/Output Safety Test Subgroup 2/3,
VPR = VIORM x 1.2, t = 10 s,
Partial discharge < 5 pC
1697
t = 60 sec (qualification)
VPEAK
VIOTM
Maximum Transient Isolation voltage
6000
VPEAK
VISO
VTEST = VISO = 4243 VRMS, t = 60 sec (qualification);
Withstanding Isolation voltage per UL
VTEST = 1.2 × VISO = 5092 VRMS, t = 1 sec (100%
1577
production)
4243
VRMS
RS
Isolation resistance
>109
Ω
VIO = 500 V at TS = 150°C
Pollution degree
2
8.3.2 IEC 60664-1 Ratings Table
PARAMETER
TEST CONDITIONS
Basic Isolation Group
SPECIFICATION
Material Group
Installation Classification
II
Rated mains voltages 1011
Ω
VIO = 0.4 sin(2πft), f = 1 MHz
2
pF
VI = VCC/2 + 0.4 sin(2πft), f = 1 MHz, VCC = 5 V
2
pF
All pins on each side of the barrier tied together creating a 2-terminal device.
Measured from input pin to ground.
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empty para for space above the NOTE
NOTE
Creepage and clearance requirements should be applied according to the specific
equipment isolation standards of an application. Care should be taken to maintain the
creepage and clearance distance of a board design to ensure that the mounting pads of
the isolator on the printed-circuit-board (PCB) do not reduce this distance.
Creepage and clearance on a PCB become equal according to the measurement
techniques shown in the Isolation Glossary. Techniques such as inserting grooves and/or
ribs on a printed circuit board are used to help increase these specifications.
8.3.4 Safety Limiting Values
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry.
A failure of the I/O can allow low resistance to ground or the supply and, without current-limiting, dissipate
sufficient power to overheat the die and damage the isolation barrier potentially leading to secondary system
failures.
PARAMETER
TEST CONDITIONS
Is
Safety input, output, or supply current
Ts
Maximum Case Temperature
MIN
TYP
MAX
θJA =79.9°C/W, VI = 5.25 V, TJ = 150°C, TA = 25°C
298
θJA =79.9°C/W, VI = 3.45 V, TJ = 150°C, TA = 25°C
453
150
UNIT
mA
°C
The safety-limiting constraint is the absolute maximum junction temperature specified in the absolute maximum
ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the
application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the
Thermal Information table is that of a device installed on a High-K Test Board for Leaded Surface-Mount
Packages. The power is the recommended maximum input voltage times the current. The junction temperature is
then the ambient temperature plus the power times the junction-to-air thermal resistance.
Safety Limiting Current - mA
500
VCC1 and VCC2 at 3.45 V
400
300
VCC1 and VCC2 at 5.25 V
200
100
0
0
50
100
150
200
250
Case Temperature - °C
Figure 8. DW-16 RΘJC Thermal Derating Curve for VDE
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8.3.5 Regulatory Information
VDE
TUV
CSA
UL
Certified according to
DIN V VDE V 0884-10
(VDE V 0884-10):200612 and DIN EN 61010-1
(VDE 0411-1):2011-07
Certified according to EN
60950-1 and EN 61010-1
Basic Insulation
Maximum Transient
Isolation voltage, 6000
VPK
Maximum Repetitive
Peak Isolation Voltage,
1414 VPK
5000 VRMS Isolation
Rating;
Reinforced insulation per
CSA 60950-1-07+A1 and
5000 VRMS Isolation
IEC 60950-1 2nd Ed.+A1,
Rating;
380 VRMS max working
Reinforced Insulation, 400
voltage;
Single Protection, 4243
VRMS maximum working
Reinforced insulation per VRMS Withstanding
voltage;
CSA 61010-1-04 and IEC Isolation Voltage
Basic Insulation, 600
61010-1 2nd Ed, 300
VRMS maximum working
VRMS max working
voltage
voltage;
2 Means of Patient
Protection at 125 VRMS
per IEC 60601-1 (3rd Ed.)
Reinforced Insulation,
Altitude ≤ 5000 m, Tropical
Climate, 250 VRMS
maximum working voltage
Certificate Number:
40016131
Certificate Number: U8V
1309 77311 010
Certificate Number:
CQC14001109542
Approved under CSA
Component Acceptance
Notice 5A, IEC 60950-1,
IEC 61010-1, and IEC
60601-1
Master Contract Number:
220991
CQC
Recognized under 1577
Component Recognition
Program
Certified according to GB
4943.1-2011
File Number: E181974
8.4 Device Functional Modes
Table 1. Device Function Table
VCCI
(1)
VCCO (1)
PU
(1)
INPUT (INA, INB) (1)
OUTPUT (OUTA, OUTB) (1)
H
H
PU
L
L
Open
H
PD
PU
X
H
X
PD
X
Undetermined
VCCI = Input-side VCC; VCCO = Output-side VCC; PU = Powered Up (Vcc ≥ 3.15 V); PD = Powered
Down (Vcc ≤ 2.1 V); X = Irrelevant; H = High Level; L = Low Level
Input
VCCI
VCCI
VCCI
Output
VCCO
1 M
500
8
IN
OUT
13
Figure 9. Equivalent Input and Output Schematic Diagrams
14
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The ISO7520C and ISO7521C are high-performance, dual-channel digital isolators with a 5-kVRMS isolation
voltage. The isolator uses single-ended TTL-logic switching technology. The supply voltage range is from 3.15 V
to 5.25 V for both supplies, VCC1 and VCC2. When designing with digital isolators, it is important to keep in mind
that due to the single-ended design structure, digital isolators do not conform to any specific interface standard
and are only intended for isolating single-ended TTL digital signal lines. The isolator is typically placed between
the data controller (that is, μC or UART), and a data converter or a line transceiver, regardless of the interface
type or standard.
9.2 Typical Application
The ISO7521C can be used with Texas Instruments' mixed signal micro-controller, digital-to-analog converter,
transformer driver, and voltage regulator to create an isolated 4- to 20-mA current loop.
3
4
14
VCC1
VCC2
ISO7521
5
1, 7
13
12
9, 16
Figure 10. Isolated 4-20 mA Current Loop
9.2.1 Design Requirements
For the ISO7521C, use the parameters shown in Table 2.
Table 2. ISO752xC Design Parameters
PARAMETER
Supply voltage
VALUE
3.15 V to 5.25 V
Decoupling capacitor between VCC1 and GND1
0.1 µF
Decoupling capacitor from VCC2 and GND2
0.1 µF
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9.2.2 Detailed Design Procedure
Unlike optocouplers, which need external components to improve performance, provide bias, or limit current, the
ISO7521C only needs two external bypass capacitors to operate.
ISO7521C
VCC1
VCC2
GND1
1
16
GND2
NC
2
15
NC
VCC1
3
14
VCC2
OUTA
OUTA
4
13
INA
INB
INB
5
12
OUTB
NC
6
11
NC
GND1
7
10
NC
NC
8
9
GND1
GND2
GND1
GND1
I S O L A TI O N
0.1µF
0.1µF
GND2
GND2
INA
OUTB
GND2
Figure 11. Typical ISO7521C Circuit Hook-up
9.2.3 Application Curve
Input Voltage Switching Threshold − V
1.6
VIT+, 5 V
1.5
1.4
VIT+, 3.3 V
1.3
1.2
1.1
VIT−, 5 V
1.0
VIT−, 3.3 V
0.9
0.8
−55
−35
−15
5
25
45
65
85
105
TA − Free-Air Temperature − °C
125
G005
Figure 12. Input Voltage Switching Threshold vs Free-Air Temperature
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10 Power Supply Recommendations
To ensure reliable operation at all data rates and supply voltages, TI recommends placing a 0.1-μF bypass
capacitor at the input and output supply pins (VCC1 and VCC2). The capacitors must be placed as close to the
supply pins as possible. If only a single primary-side power supply is available in an application, isolated power
can be generated for the secondary-side with the help of a transformer driver such as Texas Instruments'
SN6501. For such applications, detailed power supply design and transformer selection recommendations are
available in the SN6501 data sheet (SLLSEA0).
11 Layout
11.1 Layout Guidelines
A minimum of four layers is required to accomplish a low EMI PCB design (see Figure 13). Layer stacking must
be in the following order (top-to-bottom): high-speed signal layer, ground plane, power plane and low-frequency
signal layer.
• Routing the high-speed traces on the top layer avoids the use of vias (and the introduction of their
inductances) and allows for clean interconnects between the isolator and the transmitter and receiver circuits
of the data link.
• Placing a solid ground plane next to the high-speed signal layer establishes controlled impedance for
transmission line interconnects and provides an excellent low-inductance path for the return current flow.
• Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/in2.
• Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
If an additional supply voltage plane or signal layer is needed, add a second power/ground plane system to the
stack to keep it symmetrical. This makes the stack mechanically stable and prevents it from warping. Also the
power and ground plane of each power system can be placed closer together, thus increasing the high-frequency
bypass capacitance significantly. For detailed layout recommendations, see Application Note Digital Isolator
Design Guide (SLLA284).
11.1.1 PCB Material
For digital circuit boards operating at less than 150 Mbps, (or rise and fall times higher than 1 ns), and trace
lengths of up to 10 inches, use standard FR-4 epoxy-glass as PCB material. FR-4 (Flame Retardant 4) meets
the requirements of Underwriters Laboratories UL94-V0, and is preferred over less expensive alternatives due to
its lower dielectric losses at high frequencies, less moisture absorption, greater strength and stiffness, and selfextinguishing flammability characteristics.
11.2 Layout Example
High-speed traces
10 mils
Ground plane
40 mils
Keep this space
free from planes,
traces, pads, and
vias
FR-4
0r §4.5
Power plane
10 mils
Low-speed traces
Figure 13. Layout Recommendation
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
Application Note Digital Isolator Design Guide (SLLA284)
Isolation Glossary (SLLA353)
12.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
ISO7520C
Click here
Click here
Click here
Click here
Click here
ISO7521C
Click here
Click here
Click here
Click here
Click here
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
DeviceNet is a trademark of Open DeviceNet Vendor Association.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
18
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
(4/5)
(6)
ISO7520CDW
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
ISO7520CDW
ISO7520CDWR
ACTIVE
SOIC
DW
16
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
ISO7520CDW
ISO7521CDW
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
ISO7521CDW
ISO7521CDWR
ACTIVE
SOIC
DW
16
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
ISO7521CDW
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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