LME49860MAX/NOPB

LME49860, LME49860MABD, LME49860NABD www.ti.com SNAS389C – JUNE 2007 – REVISED APRIL 2013 LME49860 44V Dual High Performance, High Fidelity Audio Operational Amplifier Check for Samples: LME49860, LME49860MABD, LME49860NABD FEATURES KEY SPECIFICATIONS • • • • • • • 1 2 Easily Drives 600Ω Loads Optimized for Superior Audio Signal Fidelity Output Short Circuit Protection PSRR and CMRR Exceed 120dB (Typ) SOIC or PDIP Packages • • • • • • • APPLICATIONS • • • • • • • • • Ultra High Quality Audio Amplification High Fidelity Preamplifiers High Fidelity Multimedia State of the Art Phono Pre Amps High Performance Professional Audio High Fidelity Equalization and Crossover Networks High Performance Line Drivers High Performance Line Receivers High Fidelity Active Filters Power Supply Voltage Range: ±2.5 to ±22V THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) – RL = 2kΩ: 0.00003% (Typ) – RL = 600Ω: 0.00003% (Typ) Input Noise Density: 2.7 nV/√Hz (Typ) Slew Rate: ±20V/μs (Typ) Gain Bandwidth Product: 55MHz (Typ) Open Loop Gain (RL = 600Ω): 140dB (Typ) Input Bias Current: 10nA (Typ) Input Offset Voltage: 0.1mV (Typ) DC Gain Linearity Error: 0.000009% DESCRIPTION The LME49860 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LME49860 audio operational amplifiers deliver superior audio signal amplification for outstanding audio performance. The LME49860 combines extremely low voltage noise density (2.7nV/√Hz) with vanishingly low THD+N (0.00003%) to easily satisfy the most demanding audio applications. TYPICAL APPLICATION 150: 3320: 150: - 26.1 k: + 909: LME49860 LME49860 + INPUT 3320: 22 nF//4.7 nF//500 pF 10 pF 47 k: 3.83 k: + 100: + OUTPUT 47 nF//33 nF Note: 1% metal film resistors, 5% polypropylene capacitors Figure 1. Passively Equalized RIAA Phono Preamplifier 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007–2013, Texas Instruments Incorporated LME49860, LME49860MABD, LME49860NABD SNAS389C – JUNE 2007 – REVISED APRIL 2013 www.ti.com DESCRIPTION (CONTINUED) To ensure that the most challenging loads are driven without compromise, the LME49860 has a high slew rate of ±20V/μs and an output current capability of ±26mA. Further, dynamic range is maximized by an output stage that drives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads. The LME49860's outstanding CMRR (120dB), PSRR (120dB), and VOS (0.1mV) give the amplifier excellent operational amplifier DC performance. The LME49860 has a wide supply range of ±2.5V to ±22V. Over this supply range the LME49860 maintains excellent common-mode rejection, power supply rejection, and low input bias current. The LME49860 is unity gain stable. This Audio Operational Amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF. The LME49860 is available in 8-lead narrow body SOIC and 8-lead PDIP packages. Demonstration boards are available for each package. Connection Diagrams OUTPUT A INVERTING INPUT A 1 8 V+ 2 7 OUTPUT B A - NON-INVERTING INPUT A - V B + + - 3 6 4 5 INVERTING INPUT B NON-INVERTING INPUT B Figure 2. 8-Pin SOIC or PDIP See D or P Package These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LME49860 LME49860MABD LME49860NABD LME49860, LME49860MABD, LME49860NABD www.ti.com SNAS389C – JUNE 2007 – REVISED APRIL 2013 ABSOLUTE MAXIMUM RATINGS (1) (2) (3) Power Supply Voltage (VS = V+ - V-) 46V −65°C to 150°C Storage Temperature Input Voltage (V-) - 0.7V to (V+) + 0.7V Output Short Circuit (4) ESD Susceptibility Continuous (5) 2000V ESD Susceptibility (6) Pins 1, 4, 7 and 8 200V Pins 2, 3, 5 and 6 100V Junction Temperature 150°C Thermal Resistance (1) (2) (3) (4) (5) (6) θJA (SOIC) 145°C/W θJA (PDIP) 102°C/W Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. If Military/Aerospace specified devices are required, please contact the Texas Instrument Sales Office/ Distributors for availability and specifications. Amplifier output connected to GND, any number of amplifiers within a package. Human body model, 100pF discharged through a 1.5kΩ resistor. Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω). OPERATING RATINGS TMIN ≤ TA ≤ TMAX Temperature Range −40°C ≤ TA ≤ 85°C ±2.5V ≤ VS ≤ ±22V Supply Voltage Range ELECTRICAL CHARACTERISTICS FOR THE LME49860 (1) The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise specified. Symbol Parameter LME49860 Conditions Typical (2) RL = 2kΩ 0.00003 RL = 600Ω 0.00003 Limit (3) Units (Limits) 0.00009 % (max) THD+N Total Harmonic Distortion + Noise AV = 1, VOUT = 3Vrms IMD Intermodulation Distortion AV = 1, VOUT = 3VRMS, Two-tone, 60Hz & 7kHz 4:1 GBWP Gain Bandwidth Product 55 45 MHz (min) SR Slew Rate ±20 ±15 V/μs (min) FPBW Full Power Bandwidth VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz 10 ts Settling time AV = –1, 10V step, CL = 100pF, 0.1% error range 1.2 μs 0.34 0.65 μVRMS (max) 4.7 0.00005 Equivalent Input Noise Voltage fBW = 20Hz to 20kHz en in Equivalent Input Noise Density f = 1kHz f = 10Hz 2.7 6.4 Current Noise Density f = 1kHz f = 10Hz 1.6 3.1 VOS Offset Voltage ΔVOS/ΔTe mp Average Input Offset Voltage Drift vs Temperature (1) (2) (3) % MHz nV/√H z (max) pA/√H z VS = ±18V ±0.12 ±0.7 mV (max) VS = ±22V ±0.14 ±0.7 mV (max) –40°C ≤ TA ≤ 85°C 0.2 μV/°C Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Typical specifications are specified at +25ºC and represent the most likely parametric norm. Tested limits are ensured to AOQL (Average Outgoing Quality Level). Copyright © 2007–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: LME49860 LME49860MABD LME49860NABD 3 LME49860, LME49860MABD, LME49860NABD SNAS389C – JUNE 2007 – REVISED APRIL 2013 www.ti.com ELECTRICAL CHARACTERISTICS FOR THE LME49860(1) (continued) The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise specified. Symbol PSRR ISOCH-CH Parameter ΔIOS/ΔTe mp See (4) VS = ±18V, Δ VS = 24V VS = ±22V, Δ VS = 30V 120 120 Channel-to-Channel Isolation fIN = 1kHz fIN = 20kHz 118 112 Input Bias Current Drift vs Temperature CMRR –40°C ≤ TA ≤ 85°C Common-Mode Rejection Common Mode Input Impedance AVOL Open Loop Voltage Gain VOUTMAX Maximum Output Voltage Swing dB 72 nA (max) nA/°C nA (max) VS = ±18V +17.1 –16.9 (V+) – 2.0 (V-) + 2.0 V (min) V (min) VS = ±22V +21.0 –20.8 (V+) – 2.0 (V-) + 2.0 V (min) V (min) VS = ±18V -12V ≤ VCM ≤ 12V 120 VS = ±22V -15V ≤ VCM ≤ 15V 120 dB 110 dB (min) 30 kΩ –10V